公开(公告)号：US09236573B2

公开(公告)日：2016-01-12

申请号：US14114065

申请日：2012-04-26

Applicant: Sang Jin Moon ,  Jong Cheol Lee ,  Won Suk Shin ,  Sang Kyu Lee

Inventor： Sang Jin Moon ,  Jong Cheol Lee ,  Won Suk Shin ,  Sang Kyu Lee

IPC: H01L51/00 ,  C07D495/04

CPC classification number: H01L51/0074 ,  C07D495/04 ,  H01L51/0036

Abstract: Provided are an organic semiconductor compound, a method for preparing same, a polymer compound having the organic semiconductor compound of the present invention as a monomer, and an organic semiconductor device containing the polymer compound. Said organic semiconductor compound has side chains in the chemical structure thereof, and is highly soluble in a solvent, and therefore the organic semiconductor compound can be effectively used in solution-based processes. The organic semiconductor device containing the polymer compound according to the present invention yields high manufacturing efficiency.

Abstract translation: 提供有机半导体化合物，其制备方法，具有本发明的有机半导体化合物作为单体的高分子化合物和含有高分子化合物的有机半导体器件。 所述有机半导体化合物在其化学结构中具有侧链，并且在溶剂中高度可溶，因此有机半导体化合物可以有效地用于基于溶液的方法。 含有本发明的高分子化合物的有机半导体装置的制造效率高。

公开(公告)号：US08723250B2

公开(公告)日：2014-05-13

申请号：US13042871

申请日：2011-03-08

Applicant: Jong-cheol Lee ,  Ki-yeon Park ,  Chun-hyung Chung ,  Cha-young Yoo

Inventor： Jong-cheol Lee ,  Ki-yeon Park ,  Chun-hyung Chung ,  Cha-young Yoo

IPC: H01L21/768 ,  H01L49/02

CPC classification number: H01L21/76835 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/76831 ,  H01L27/10808 ,  H01L28/40 ,  H01L28/55 ,  H01L29/7881 ,  H01L29/792

Abstract: An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.

Abstract translation: 电子器件包括下层，下层上的复合电介质层和复合介电层上的上层。 复合电介质层包括无定形金属硅酸盐层和结晶金属基绝缘层。 还讨论了相关的制造方法。

公开(公告)号：US08722674B2

公开(公告)日：2014-05-13

申请号：US12674886

申请日：2008-08-28

Applicant: Hyae Gyeong Cheon ,  Kwang-Rok Kim ,  Sang Dal Rhee ,  Won Hoon Jung ,  Jong-Cheol Lee ,  Sung Wuk Kim ,  Sung Soo Jun

Inventor： Hyae Gyeong Cheon ,  Kwang-Rok Kim ,  Sang Dal Rhee ,  Won Hoon Jung ,  Jong-Cheol Lee ,  Sung Wuk Kim ,  Sung Soo Jun

IPC: A61K31/53 ,  C07D251/54 ,  C07D403/00 ,  C07D251/70

CPC classification number: C07D251/70 ,  A61K31/53 ,  C07D251/54 ,  C07D401/12 ,  C07D403/04 ,  C07D403/12 ,  C07D405/12

Abstract: Disclosed herein are a 1,3,5-triazine-2,4,6-triamine compound or a pharmaceutically acceptable salt thereof, a preparation method thereof, and a composition for preventing or treating metabolic syndromes, diabetes, or cancers with deletion of P53 gene, which comprises the same.

Abstract translation: 本文公开了1,3,5-三嗪-2,4,6-三胺化合物或其药学上可接受的盐，其制备方法和用于预防或治疗代谢综合征，糖尿病或具有P53缺失的癌症的组合物 基因，其包含相同的。

公开(公告)号：US08710564B2

公开(公告)日：2014-04-29

申请号：US13418472

申请日：2012-03-13

Applicant: Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

Inventor： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC: H01L27/108

CPC classification number: H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

Abstract: Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

Abstract translation: 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US08648111B2

公开(公告)日：2014-02-11

申请号：US13123296

申请日：2009-10-13

Applicant: Sung Wuk Kim ,  Sung Soo Jun ,  Hyae Gyeong Cheon ,  Kwang Rok Kim ,  Sang Dal Rhee ,  Won Hoon Jung ,  Jong Cheol Lee

Inventor： Sung Wuk Kim ,  Sung Soo Jun ,  Hyae Gyeong Cheon ,  Kwang Rok Kim ,  Sang Dal Rhee ,  Won Hoon Jung ,  Jong Cheol Lee

IPC: A61K31/38 ,  C07D333/20

CPC classification number: C07D333/20

Abstract: The present invention provides an N1-2-thiophen-2-ylethyl-N2-substituted biguanide derivative of formula (I) or a pharmaceutically acceptable salt thereof, a method for preparing same, and a pharmaceutical composition comprising same as an active ingredient. The inventive N1-2-thiophen-2-ylethyl-N2-substituted biguanide derivative exhibits improved blood glucose level- and lipid level-lowering effects even with a reduced dosage as compared to conventional drugs, and thus, it is useful for preventing or treating diabetes, metabolic syndromes such as insulin-independent diabetes, obesity and atherosclerosis, or a P53 gene defect-related cancer.

Abstract translation: 本发明提供式（I）的N1-2-噻吩-2-基乙基-N2-取代双胍衍生物或其药学上可接受的盐，其制备方法和包含其的作为活性成分的药物组合物。 与常规药物相比，本发明的N1-2-噻吩-2-基乙基-N2-取代双胍衍生物即使使用较少的剂量也显示出改善的血糖水平和脂质降低水平的效果，因此它可用于预防或治疗 糖尿病，代谢综合征如胰岛素不依赖性糖尿病，肥胖和动脉粥样硬化，或P53基因缺陷相关的癌症。

公开(公告)号：US08642647B2

公开(公告)日：2014-02-04

申请号：US13123417

申请日：2009-10-13

Applicant: Sung Wuk Kim ,  Sung Soo Jun ,  Hyae Gyeong Cheon ,  Kwang Rok Kim ,  Sang Dal Rhee ,  Won Hoon Jung ,  Jong Cheol Lee

Inventor： Sung Wuk Kim ,  Sung Soo Jun ,  Hyae Gyeong Cheon ,  Kwang Rok Kim ,  Sang Dal Rhee ,  Won Hoon Jung ,  Jong Cheol Lee

IPC: C07D317/44 ,  A61K31/36

CPC classification number: C07D317/58

Abstract: The present invention provides an N1-benzo[1,3]dioxol-5-ylmethyl-N2-substituted biguanide derivative of formula (I) or a pharmaceutically acceptable salt thereof, a method for preparing same, and a pharmaceutical composition comprising same as an active ingredient. The inventive N1-benzo[1,3]dioxol-5-ylmethyl-N2-substituted biguanide derivative exhibits improved blood glucose level- and lipid level-lowering effects even with a reduced dosage as compared to conventional drugs, and thus, it is useful for preventing or treating diabetes, metabolic syndromes such as insulin-independent diabetes, obesity and atherosclerosis, or a P53 gene defect-related cancer.

Abstract translation: 本发明提供式（I）的1,3-苯并[1,3]二氧杂环戊烯-5-基甲基-N 2取代双胍衍生物或其药学上可接受的盐，其制备方法，以及包含其的药物组合物 有效成分。 本发明的N1-苯并[1,3]二氧杂环戊烯-5-基甲基-N2-取代的双胍衍生物即使与常规药物相比也显示出降低剂量的血糖水平和脂质降低水平的效果，因此它是有用的 用于预防或治疗糖尿病，代谢综合征如胰岛素不依赖性糖尿病，肥胖症和动脉粥样硬化，或P53基因缺陷相关癌症。

公开(公告)号：US08361551B2

公开(公告)日：2013-01-29

申请号：US12648377

申请日：2009-12-29

Applicant: Jong-Cheol Lee ,  Ki-Yeon Park ,  Jun-Noh Lee

Inventor： Jong-Cheol Lee ,  Ki-Yeon Park ,  Jun-Noh Lee

IPC: C23C16/40

CPC classification number: C23C16/4554 ,  C23C16/45531 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L28/60 ,  H01L29/66575 ,  H01L29/78

Abstract: In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site.

Abstract translation: 在形成具有均匀构成材料组成的目标层的方法中，包括第一中心原子和配体的第一前体在物体的第一反应位置被化学吸附。 然后除去配体或第一中心原子以形成第二反应位点。 包括第二中心原子的第二前体然后在第二反应位点被化学吸附。

公开(公告)号：US08314025B2

公开(公告)日：2012-11-20

申请号：US12793843

申请日：2010-06-04

Applicant: Sung-Il Cho ,  Nam-Gun Kim ,  Jong-Cheol Lee

Inventor： Sung-Il Cho ,  Nam-Gun Kim ,  Jong-Cheol Lee

IPC: H01L21/00

CPC classification number: H01L23/485 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L27/10814 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor device includes forming a lower conductive pattern on a substrate, forming an insulating layer over the lower conductive pattern, forming a contact hole through the insulating layer to expose the lower conductive pattern, forming a first spacer along sides of the contact hole, and then forming a contact plug in the contact hole. The contact plug is formed so as to contact the lower conductive pattern.

Abstract translation: 形成半导体器件的方法包括在衬底上形成下导电图案，在下导电图案上形成绝缘层，形成通过绝缘层的接触孔，露出下导电图案，沿着第 接触孔，然后在接触孔中形成接触塞。 接触塞形成为与下导电图案接触。

公开(公告)号：US20120088360A1

公开(公告)日：2012-04-12

申请号：US13326700

申请日：2011-12-15

Applicant: Ki-chul Kim ,  Jong-cheol Lee ,  Heung-ahn Kwon ,  Hyun-wook Lee

Inventor： Ki-chul Kim ,  Jong-cheol Lee ,  Heung-ahn Kwon ,  Hyun-wook Lee

IPC: H01L21/28

CPC classification number: H01L21/28273 ,  H01L21/28282 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/513

Abstract: Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

Abstract translation: 制造包括多层电介质层的半导体器件的方法可以包括在半导体衬底上形成金属氧化物层，并在金属氧化物层上形成包含金属原子和硅原子的多层硅酸盐层。 硅酸盐层的多层可以包括具有不同硅浓度的至少两个金属硅酸盐层，其是包含在金属硅酸盐层中的所有金属原子和硅原子之间的硅原子的比率。

公开(公告)号：US20110237587A1

公开(公告)日：2011-09-29

申请号：US12674886

申请日：2008-08-28

Applicant: Hyae Gyeong Cheon ,  Kwang-Rok Kim ,  Sang Dal Rhee ,  Won Hoon Jung ,  Jong-Cheol Lee ,  Sung Wuk Kim ,  Sung Soo Jun

Inventor： Hyae Gyeong Cheon ,  Kwang-Rok Kim ,  Sang Dal Rhee ,  Won Hoon Jung ,  Jong-Cheol Lee ,  Sung Wuk Kim ,  Sung Soo Jun

IPC: A61K31/53 ,  C07D405/02 ,  C07D251/54 ,  C07D413/02 ,  A61K31/5377 ,  A61P3/00 ,  A61P3/10 ,  A61P35/00

CPC classification number: C07D251/70 ,  A61K31/53 ,  C07D251/54 ,  C07D401/12 ,  C07D403/04 ,  C07D403/12 ,  C07D405/12

Abstract: Disclosed herein are a 1,3,5-triazine-2,4,6-triamine compound or a pharmaceutically acceptable salt thereof, a preparation method thereof, and a composition for preventing or treating metabolic syndromes, diabetes, or cancers with deletion of P53 gene, which comprises the same.

Abstract translation: 本文公开了1,3,5-三嗪-2,4,6-三胺化合物或其药学上可接受的盐，其制备方法和用于预防或治疗代谢综合征，糖尿病或具有P53缺失的癌症的组合物 基因，其包含相同的。