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    GAME DEVICE, GAME CONTROL METHOD, AND GAME CONTROL PROGRAM
    41.
    发明申请
    GAME DEVICE, GAME CONTROL METHOD, AND GAME CONTROL PROGRAM 有权
    游戏设备，游戏控制方法和游戏控制程序

    公开(公告)号：US20100240457A1

    公开(公告)日：2010-09-23

    申请号：US12601535

    申请日：2008-11-14

    申请人： Tatsuya Suzuki ,  Jun Fujiki ,  Takanori Kikuchi

    发明人： Tatsuya Suzuki ,  Jun Fujiki ,  Takanori Kikuchi

    IPC分类号： A63F13/00 ,  A63F9/24

    CPC分类号： A63F13/525 ,  A63F13/10 ,  A63F13/422 ,  A63F13/60 ,  A63F2300/308 ,  A63F2300/6018 ,  A63F2300/6054 ,  A63F2300/6676 ,  A63F2300/8094

    摘要： A game device includes a shape data storage which stores data of an object disposed in a three-dimensional space, a first rendering unit which sets a point of view and a line of sight and renders the object, a viewpoint changing unit which receives a change instruction indicating a change of the point of view or line of sight and changes the point of view or line of sight, and a character controller which moves a character along the outer surface of the object. The character controller allows the character to move between two-dimensional planes of objects rendered in such a manner that the objects are adjacent to each other in the two-dimensional planes generated by the first rendering unit, and the game device further includes a search unit which searches a set of objects lying within a predetermined range of distance in the two-dimensional plane, and changes the point of view or line of sight so that the searched objects can be rendered adjacently to each other in the two-dimensional plane.

    摘要翻译： 一种游戏装置，包括存储设置在三维空间中的物体的数据的形状数据存储器，设置观察点和视线并呈现物体的第一渲染单元，接收变化的视点改变单元 指示视点或视线的变化并改变视点或视线的指令，以及沿对象的外表面移动字符的字符控制器。 字符控制器允许角色在由第一渲染单元生成的二维平面中的对象彼此相邻的方式呈现的对象的二维平面之间移动，并且游戏装置还包括搜索单元 其搜索位于二维平面内的预定距离范围内的一组对象，并且改变视点或视线，使得可以在二维平面中彼此相邻地进行搜索到的对象。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
    42.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME 失效
    非易失性半导体存储器件及其驱动方法

    公开(公告)号：US20100080065A1

    公开(公告)日：2010-04-01

    申请号：US12496064

    申请日：2009-07-01

    申请人： Jun FUJIKI ,  Koichi Muraoka ,  Naoki Yasuda

    发明人： Jun FUJIKI ,  Koichi Muraoka ,  Naoki Yasuda

    IPC分类号： G11C16/04 ,  H01L29/792

    CPC分类号： H01L29/7881 ,  G11C16/0466 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/792

    摘要： A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer.

    摘要翻译： 非易失性半导体存储器件包括存储单元和驱动单元。 存储单元具有半导体层，具有设置在沟道两侧的沟道以及源极区和漏极区; 设置在所述通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 以及设置在电荷保持层上的栅电极。 驱动单元在栅电极和半导体层之间施加具有恒定幅度和恒定频率的突发​​信号，并执行对电荷保持层进行编程和擦除电荷的操作中的至少一种。

    Stator of Alternating-Current Rotary Electric Machine and Method of Insulating Stator Winding of Alternating-Current Rotary Electric Machine
    46.
    发明申请
    Stator of Alternating-Current Rotary Electric Machine and Method of Insulating Stator Winding of Alternating-Current Rotary Electric Machine 审中-公开
    交流回转电机定子及交流电动机绝缘定子绕线方法

    公开(公告)号：US20090121565A1

    公开(公告)日：2009-05-14

    申请号：US11988214

    申请日：2006-07-13

    申请人： Hirotatsu Ihara ,  Jun Fujiki ,  Osamu Katou

    发明人： Hirotatsu Ihara ,  Jun Fujiki ,  Osamu Katou

    IPC分类号： H01R4/70 ,  H02K11/00

    CPC分类号： H02K3/38

    摘要： A neutral point terminal, which is formed by electrically connecting with each other a plurality of phases of coil windings included by an alternating-current rotary electric machine having the plurality of phases, is inserted into an insulating cover prefabricated into a bag shape to be fitted thereinto, and thereby insulated from the surroundings. As a result, an insulation distance of the neutral point terminal can be ensured by simple assembly work, while variations caused by the work can be reduced.

    摘要翻译： 通过将具有多相的交流电动机所包含的多个线圈绕组相互电连接形成的中性点端子插入预制成袋形状的绝缘盖中，以装配 从而与周围环境绝缘。 结果，通过简单的组装工作可以确保中性点端子的绝缘距离，同时可以减少工作引起的变化。

    Nonvolatile semiconductor memory device including silicon germanium semiconductor layer
    47.
    发明授权
    Nonvolatile semiconductor memory device including silicon germanium semiconductor layer 有权
    包括硅锗半导体层的非易失性半导体存储器件

    公开(公告)号：US08912594B2

    公开(公告)日：2014-12-16

    申请号：US13560260

    申请日：2012-07-27

    申请人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

    发明人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

    IPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/105

    CPC分类号： H01L29/7926 ,  H01L27/11582 ,  H01L29/66833

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a stacked body, a second insulating layer, a select gate, a memory hole, a memory film, a channel body, a first semiconductor layer, and a second semiconductor layer. The select gate is provided on the second insulating layer. The memory film is provided on an inner wall of the memory hole. The channel body is provided inside the memory film. The first semiconductor layer is provided on an upper surface of the channel body. The second semiconductor layer is provided on the first semiconductor layer. The first semiconductor layer contains silicon germanium. The second semiconductor layer contains silicon germanium doped with a first impurity. A boundary between the first semiconductor layer and the second semiconductor layer is provided above a position of an upper end of the select gate.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括层叠体，第二绝缘层，选择栅极，存储器孔，存储​​膜，通道体，第一半导体层和第二半导体层。 选择栅极设置在第二绝缘层上。 记忆膜设置在存储孔的内壁上。 通道体设置在记忆膜的内部。 第一半导体层设置在通道主体的上表面上。 第二半导体层设置在第一半导体层上。 第一半导体层包含硅锗。 第二半导体层包含掺杂有第一杂质的硅锗。 第一半导体层和第二半导体层之间的边界设置在选择栅极的上端的位置的上方。

    Variable resistance memory
    48.
    发明授权
    Variable resistance memory 有权
    可变电阻记忆

    公开(公告)号：US08723152B2

    公开(公告)日：2014-05-13

    申请号：US13425687

    申请日：2012-03-21

    申请人： Yoshifumi Nishi ,  Hidenori Miyagawa ,  Daisuke Matsushita ,  Jun Fujiki ,  Takeshi Imamura

    发明人： Yoshifumi Nishi ,  Hidenori Miyagawa ,  Daisuke Matsushita ,  Jun Fujiki ,  Takeshi Imamura

    IPC分类号： H01L47/00

    CPC分类号： H01L45/085 ,  H01L27/2472 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/148 ,  H01L45/149

    摘要： A variable resistance memory according to an embodiment includes: a first wiring; a second wiring intersecting with the first wiring; a first electrode provided in an intersection region between the first wiring and the second wiring, the first electrode being connected to the first wiring; a second electrode connected to the second wiring, the second electrode facing to the first electrode; a variable resistance layer provided between the first electrode and the second electrode; and one of a first insulating layer and a first semiconductor layer formed at side portions of the second electrode. The one of the first insulating layer and the first semiconductor layer, and the second electrode form voids at the side portions of the second electrode.

    摘要翻译： 根据实施例的可变电阻存储器包括：第一布线; 与第一布线相交的第二布线; 设置在所述第一布线和所述第二布线之间的交叉区域中的第一电极，所述第一电极连接到所述第一布线; 连接到第二布线的第二电极，第二电极面对第一电极; 设置在所述第一电极和所述第二电极之间的可变电阻层; 以及形成在第二电极的侧部的第一绝缘层和第一半导体层之一。 第一绝缘层和第一半导体层中的一个，第二电极形状在第二电极的侧部空隙。