Abstract:
Self-assembled silica condensates are described as well as their use in coating compositions. The self-assembled silica condensates can be formed from the hydrolysis of medium to long chain trialkoxy silane compounds. Coating compositions containing the self-assembled silica condensates can provide coatings having improved scratch and mar resistance and can have excellent recoat adhesion.
Abstract:
The disclosure provides a novel anti-angiogenesis fusion protein. The present invention combines a chimeric vascular endothelial cell growth factor (VEGF) receptor or a fragment thereof with a multimerizing component, which have a superior binding capacity with human VEGF and placental growth factor (PIGF). The fusion protein has improved stability, prolonged half-life and the ability to form multivalent interactions with VEGF, and can be used for anti-angiogenesis, treating VEGF related diseases and inhibiting tumor growth.
Abstract:
A method of producing a transparent and conductive film, comprising (a) forming aerosol droplets of a first dispersion comprising a first conducting nano filaments in a first liquid; (b) forming aerosol droplets of a second dispersion comprising a graphene material in a second liquid; (c) depositing the aerosol droplets of a first dispersion and the aerosol droplets of a second dispersion onto a supporting substrate; and (d) removing the first liquid and the second liquid from the droplets to form the film, which is composed of the first conducting nano filaments and the graphene material having a nano filament-to-graphene weight ratio of from 1/99 to 99/1, wherein the film exhibits an optical transparence no less than 80% and sheet resistance no higher than 300 ohm/square.
Abstract:
An optically transparent and electrically conductive film composed of metal nanowires or carbon nanotubes combined with pristine graphene with a metal nanowire-to-graphene or carbon nanotube-to-graphene weight ratio from 1/99 to 99/1, wherein the pristine graphene is single-crystalline and contains no oxygen and no hydrogen, and the film exhibits an optical transparence no less than 80% and sheet resistance no higher than 300 ohm/square. This film can be used as a transparent conductive electrode in an electro-optic device, such as a photovoltaic or solar cell, light-emitting diode, photo-detector, touch screen, electro-wetting display, liquid crystal display, plasma display, LED display, a TV screen, a computer screen, or a mobile phone screen.
Abstract:
Disclosed herein are methods for preparing graphene/nano-titanium dioxide composites. About 500 to 10,000 parts by weight of nano-titanium dioxide and about 1 part by weight of graphene are distributed in a water-ethanol (about 2:1 to 3:1 by volume) solution to obtain a dispersion. The nano-titanium dioxide and graphene within the dispersion are allowed to react under a pressure of about 10 to 15 MPa and a temperature of about 100 to 200° C. thereby producing the graphene/nano-titanium dioxide composites.
Abstract:
A kind of cylindrical lock, this lock able to be installed on a door, includes: one transmission structure which can operate a drive base, this drive base gearing a latch mechanism; this latch mechanism having: one tubular shaped element, which can be coupled to a handle for actuation; a tube, which can be rotated and inserted into the tubular shaped element; one pushing part, having one side with at least one pushing section, this pushing section able to push the drive base at the appropriate time; a collar, which can be set on one end of the tubular shaped element, a meshing section formed on one end of the collar; an engaging element, partly installed in this pushing part, one meshing section formed on this engaging element, and this engaging element having at least one pushable section; one rotating part, having at least one pushing portion, each pushing portion at the appropriate time pushing the adjacent pushable section of the engaging element; one lock set, having a lock core linked to one transmission part; rotating this lock core to move from the beginning position at an angled position in a predetermined direction back to the beginning position, the transmission part of this lock set can push a moving part, causing this engaging element to do axial displacement, and causing the meshing section of the engaging element to be positioned and move between the incompatible meshing of the first position or compatible meshing of the second position, on the meshing section of this collar.
Abstract:
A protective cover includes a cover body and a pressing body integrally mounted to the cover body. The cover body has an accommodating cavity recessed from a surface of the cover body and an accommodating hole defined through the base wall of the accommodating cavity. The pressing body is mounted to the cover body and includes a pressing portion and a resisting post. The pressing portion is configured for being received within the accommodating cavity and exposed from the accommodating hole. The resisting post protruding from a surface of the pressing portion away from the cover body corresponding to the switch. There also discloses a key assembly using the protective cover and a portable electronic device using the key assembly.
Abstract:
A stylus includes a housing, a core, a pole and a positioning member. The core is slidably received in the housing. The pole is secured in the housing. The pole includes a first ring groove and a second ring groove. The positioning member is mounted to the core. A plurality of arcuate portions is formed on the positioning member. The arcuate portions are selectably engaged in the first ring groove and the second ring groove to position the stylus at different positions.
Abstract:
A semiconductor device includes: a semiconductor substrate including a trench; a capacitor electrode formed in the trench; a first insulation film formed on a bottom of the trench and between the semiconductor substrate and the capacitor electrode; a second insulation film formed on a side wall of the trench and between the semiconductor substrate and the capacitor electrode; and a first metal oxide film formed at the bottom of the trench and between the capacitor electrode and the first insulation film.
Abstract:
A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor.