Anti-angiogenesis fusion proteins
    42.
    发明授权
    Anti-angiogenesis fusion proteins 有权
    抗血管生成融合蛋白

    公开(公告)号:US08926972B2

    公开(公告)日:2015-01-06

    申请号:US12727188

    申请日:2010-03-18

    CPC classification number: C07K14/71 A61K38/00 C07K2319/30

    Abstract: The disclosure provides a novel anti-angiogenesis fusion protein. The present invention combines a chimeric vascular endothelial cell growth factor (VEGF) receptor or a fragment thereof with a multimerizing component, which have a superior binding capacity with human VEGF and placental growth factor (PIGF). The fusion protein has improved stability, prolonged half-life and the ability to form multivalent interactions with VEGF, and can be used for anti-angiogenesis, treating VEGF related diseases and inhibiting tumor growth.

    Abstract translation: 本公开提供了一种新的抗血管生成融合蛋白。 本发明将嵌合血管内皮细胞生长因子(VEGF)受体或其片段与多聚化成分组合,其与人VEGF和胎盘生长因子(PIGF)具有优异的结合能力。 融合蛋白具有改善的稳定性,延长的半衰期和与VEGF形成多价相互作用的能力,并且可用于抗血管生成,治疗VEGF相关疾病和抑制肿瘤生长。

    Method for producing conducting and transparent films from combined graphene and conductive nano filaments
    43.
    发明授权
    Method for producing conducting and transparent films from combined graphene and conductive nano filaments 有权
    从组合石墨烯和导电纳米丝生产导电和透明薄膜的方法

    公开(公告)号:US08871296B2

    公开(公告)日:2014-10-28

    申请号:US13815730

    申请日:2013-03-14

    Abstract: A method of producing a transparent and conductive film, comprising (a) forming aerosol droplets of a first dispersion comprising a first conducting nano filaments in a first liquid; (b) forming aerosol droplets of a second dispersion comprising a graphene material in a second liquid; (c) depositing the aerosol droplets of a first dispersion and the aerosol droplets of a second dispersion onto a supporting substrate; and (d) removing the first liquid and the second liquid from the droplets to form the film, which is composed of the first conducting nano filaments and the graphene material having a nano filament-to-graphene weight ratio of from 1/99 to 99/1, wherein the film exhibits an optical transparence no less than 80% and sheet resistance no higher than 300 ohm/square.

    Abstract translation: 一种制造透明导电膜的方法,包括(a)在第一液体中形成包含第一导电纳米长丝的第一分散体的气溶胶滴; (b)在第二液体中形成包含石墨烯材料的第二分散体的气溶胶液滴; (c)将第一分散体的气溶胶液滴和第二分散体的气溶胶液滴沉积到支撑基底上; 和(d)从液滴中除去第一液体和第二液体以形成由第一导电纳米丝和石墨烯材料组成的膜,其具有1/99至99的纳米线 - 石墨烯重量比 / 1,其中所述膜显示不小于80%的光学透明度和不高于300欧姆/平方的薄层电阻。

    Highly conducting and transparent film and process for producing same
    44.
    发明申请
    Highly conducting and transparent film and process for producing same 审中-公开
    高导电透明膜及其制造方法

    公开(公告)号:US20140235123A1

    公开(公告)日:2014-08-21

    申请号:US13815316

    申请日:2013-02-21

    Abstract: An optically transparent and electrically conductive film composed of metal nanowires or carbon nanotubes combined with pristine graphene with a metal nanowire-to-graphene or carbon nanotube-to-graphene weight ratio from 1/99 to 99/1, wherein the pristine graphene is single-crystalline and contains no oxygen and no hydrogen, and the film exhibits an optical transparence no less than 80% and sheet resistance no higher than 300 ohm/square. This film can be used as a transparent conductive electrode in an electro-optic device, such as a photovoltaic or solar cell, light-emitting diode, photo-detector, touch screen, electro-wetting display, liquid crystal display, plasma display, LED display, a TV screen, a computer screen, or a mobile phone screen.

    Abstract translation: 由金属纳米线或碳纳米管与原始石墨烯组合的光学透明和导电膜,其中金属纳米线对石墨烯或碳纳米管与石墨烯的重量比为1/99至99/1,其中原始石墨烯为单一 不含氧而不含氢,膜的光学透明度不低于80%,薄层电阻不高于300欧姆/平方。 该膜可以用作电光装置中的透明导电电极,例如光伏或太阳能电池,发光二极管,光电检测器,触摸屏,电润湿显示器,液晶显示器,等离子体显示器,LED 显示,电视屏幕,电脑屏幕或手机屏幕。

    CYLINDRICAL LOCK
    46.
    发明申请
    CYLINDRICAL LOCK 有权
    圆柱锁

    公开(公告)号:US20120017657A1

    公开(公告)日:2012-01-26

    申请号:US13186449

    申请日:2011-07-19

    Abstract: A kind of cylindrical lock, this lock able to be installed on a door, includes: one transmission structure which can operate a drive base, this drive base gearing a latch mechanism; this latch mechanism having: one tubular shaped element, which can be coupled to a handle for actuation; a tube, which can be rotated and inserted into the tubular shaped element; one pushing part, having one side with at least one pushing section, this pushing section able to push the drive base at the appropriate time; a collar, which can be set on one end of the tubular shaped element, a meshing section formed on one end of the collar; an engaging element, partly installed in this pushing part, one meshing section formed on this engaging element, and this engaging element having at least one pushable section; one rotating part, having at least one pushing portion, each pushing portion at the appropriate time pushing the adjacent pushable section of the engaging element; one lock set, having a lock core linked to one transmission part; rotating this lock core to move from the beginning position at an angled position in a predetermined direction back to the beginning position, the transmission part of this lock set can push a moving part, causing this engaging element to do axial displacement, and causing the meshing section of the engaging element to be positioned and move between the incompatible meshing of the first position or compatible meshing of the second position, on the meshing section of this collar.

    Abstract translation: 一种圆柱形锁,该锁可安装在门上,包括:一个传动结构,可操作一驱动基座,该传动底座装有闩锁机构; 该闩锁机构具有:一个管状元件,其可联接到手柄用于致动; 管,其可以旋转并插入到管状元件中; 一个推动部分,其一侧具有至少一个推动部分,该推动部分能够在适当的时间推动驱动基座; 可以设置在管状元件的一端的轴环,形成在轴环的一端的啮合部分; 部分地安装在该按压部分中的接合元件,形成在该接合元件上的一个啮合部分,该接合元件具有至少一个可推动部分; 一个旋转部分,具有至少一个推动部分,每个推动部分在适当的时间推动接合元件的相邻可推动部分; 一个锁定装置,具有连接到一个传动部分的锁芯; 旋转该锁芯从预定方向的倾斜位置处的起始位置返回到开始位置,该锁定装置的传动部分可以推动移动部件,导致该接合元件做轴向位移,并使啮合 所述接合元件的所述定位部分在所述第一位置的不相容的啮合或所述第二位置的相容啮合之间在所述轴环的所述啮合部分上移动。

    PROTECTIVE COVER, KEY ASSEMBLY USING THE SAME AND PORTABLE ELECTRONIC DEVICE USING THE KEY ASSEMBLY
    47.
    发明申请
    PROTECTIVE COVER, KEY ASSEMBLY USING THE SAME AND PORTABLE ELECTRONIC DEVICE USING THE KEY ASSEMBLY 失效
    保护盖,使用其的主要组件和使用钥匙组件的便携式电子设备

    公开(公告)号:US20110228493A1

    公开(公告)日:2011-09-22

    申请号:US12884227

    申请日:2010-09-17

    Abstract: A protective cover includes a cover body and a pressing body integrally mounted to the cover body. The cover body has an accommodating cavity recessed from a surface of the cover body and an accommodating hole defined through the base wall of the accommodating cavity. The pressing body is mounted to the cover body and includes a pressing portion and a resisting post. The pressing portion is configured for being received within the accommodating cavity and exposed from the accommodating hole. The resisting post protruding from a surface of the pressing portion away from the cover body corresponding to the switch. There also discloses a key assembly using the protective cover and a portable electronic device using the key assembly.

    Abstract translation: 保护盖包括盖主体和一体地安装到盖主体的按压体。 盖体具有从盖体的表面凹陷的容纳腔和通过容纳腔的底壁限定的容纳孔。 按压体安装在盖体上,包括按压部和抵接柱。 按压部构造成容纳在容纳腔内并从容纳孔露出。 抵抗柱从按压部分的表面突出,远离盖体对应于开关。 还公开了使用保护盖的密钥组件和使用密钥组件的便携式电子设备。

    TELESCOPING STYLUS FOR PORTABLE ELECTRONIC DEVICE
    48.
    发明申请
    TELESCOPING STYLUS FOR PORTABLE ELECTRONIC DEVICE 审中-公开
    便携式电子设备的电话线

    公开(公告)号:US20110193828A1

    公开(公告)日:2011-08-11

    申请号:US12902226

    申请日:2010-10-12

    CPC classification number: G06F3/03545

    Abstract: A stylus includes a housing, a core, a pole and a positioning member. The core is slidably received in the housing. The pole is secured in the housing. The pole includes a first ring groove and a second ring groove. The positioning member is mounted to the core. A plurality of arcuate portions is formed on the positioning member. The arcuate portions are selectably engaged in the first ring groove and the second ring groove to position the stylus at different positions.

    Abstract translation: 触针包括壳体,芯部,极和定位构件。 芯部可滑动地容纳在壳体中。 杆固定在外壳中。 杆包括第一环槽和第二环槽。 定位构件安装到芯部。 多个弧形部分形成在定位构件上。 弧形部分可选择地接合在第一环槽和第二环槽中,以将触针定位在不同位置。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    49.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20100006913A1

    公开(公告)日:2010-01-14

    申请号:US12499197

    申请日:2009-07-08

    Abstract: A semiconductor device includes: a semiconductor substrate including a trench; a capacitor electrode formed in the trench; a first insulation film formed on a bottom of the trench and between the semiconductor substrate and the capacitor electrode; a second insulation film formed on a side wall of the trench and between the semiconductor substrate and the capacitor electrode; and a first metal oxide film formed at the bottom of the trench and between the capacitor electrode and the first insulation film.

    Abstract translation: 半导体器件包括:包括沟槽的半导体衬底; 形成在沟槽中的电容器电极; 形成在所述沟槽的底部和所述半导体衬底与所述电容器电极之间的第一绝缘膜; 形成在所述沟槽的侧壁上以及所述半导体衬底和所述电容器电极之间的第二绝缘膜; 以及形成在所述沟槽的底部以及所述电容器电极与所述第一绝缘膜之间的第一金属氧化物膜。

    Fabrication process of a semiconductor device having a capacitor
    50.
    发明授权
    Fabrication process of a semiconductor device having a capacitor 有权
    具有电容器的半导体器件的制造工艺

    公开(公告)号:US07592216B2

    公开(公告)日:2009-09-22

    申请号:US12127067

    申请日:2008-05-27

    CPC classification number: H01L27/0629 H01L27/0802 H01L27/0805 H01L28/40

    Abstract: A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor.

    Abstract translation: 一种制造半导体器件的方法包括在半导体衬底的电容器器件区域中形成第一沟槽,在第一沟槽的侧壁表面上形成电容器绝缘膜,形成覆盖第一沟槽的半导体膜,电阻器器件区域 的半导体衬底和半导体衬底的逻辑器件区域,在第一沟槽上形成的半导体膜中引入第一杂质元素,对半导体膜进行构图以在电容器器件区域中形成顶电极,电阻器件中的电阻器 区域和逻辑器件区域中的栅电极,退火半导体衬底,并在电阻器中引入第二杂质元素。

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