公开(公告)号：US06833673B2

公开(公告)日：2004-12-21

申请号：US10335413

申请日：2003-01-03

Applicant: Osamu Toyoda ,  Motonari Kifune ,  Kazunori Inoue

Inventor： Osamu Toyoda ,  Motonari Kifune ,  Kazunori Inoue

IPC: H01J1100

CPC classification number: H01J11/16 ,  H01J11/24 ,  H01J2211/245

Abstract: A plasma display panel is provided which has a novel cell structure excelling in light emission efficiency. Each display electrode arranged on a first substrate making a substrate pair is formed in a manner to have a three-dimensional structure including an elongated power supplying portion stretching over plural cells aligned in one direction, and discharge portions protruding from the power supplying portion in the direction of electrode arrangement for each cell so as to be close to a second substrate.

Abstract translation: 提供了具有优异的发光效率的新型单元结构的等离子体显示面板。 布置在制造基板对的第一基板上的每个显示电极被形成为具有三维结构，该三维结构包括在一个方向上对齐的多个单元上延伸的细长供电部分，以及在该电源部分中突出的排出部分 每个电池单元的电极布置方向以便接近第二衬底。

公开(公告)号：US06586335B1

公开(公告)日：2003-07-01

申请号：US09645981

申请日：2000-10-11

Applicant: Kazuyuki Sakata ,  Kazunori Inoue ,  Takeshi Morita ,  Hitoshi Nagata

Inventor： Kazuyuki Sakata ,  Kazunori Inoue ,  Takeshi Morita ,  Hitoshi Nagata

IPC: H01L2972

CPC classification number: H01L29/66765 ,  G02B6/0006 ,  H01L21/28008 ,  H01L21/32134 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908

Abstract: A thin film transistor includes: a substrate, a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode, wherein in at least one electrode of the gate electrode, the source electrode and the drain electrode, end portion of the at least one electrode is tapered in such a manner that a thickness decreases in a direction toward end face of the at least one electrode, the at least one electrode being composed of one electrode material, and prescribed physical property of the at least one electrode being changed in a direction perpendicular to a surface of the at least one electrode, so that an etching rate of the at least one electrode is changed in the direction.

Abstract translation: 薄膜晶体管包括：基板，栅电极，绝缘膜，半导体膜，源电极，漏电极，其中在栅电极的至少一个电极中，源电极和漏极，端部 所述至少一个电极的厚度在朝向所述至少一个电极的端面的方向上减小，所述至少一个电极由一个电极材料构成，并且所述至少一个电极的规定的物理性质 电极在垂直于至少一个电极的表面的方向上变化，使得至少一个电极的蚀刻速率在该方向上改变。

公开(公告)号：US06252247B1

公开(公告)日：2001-06-26

申请号：US09168091

申请日：1998-10-08

Applicant: Kazuyuki Sakata ,  Kazunori Inoue ,  Toru Takeguchi ,  Nobuhiro Nakamura ,  Masaru Yamada

Inventor： Kazuyuki Sakata ,  Kazunori Inoue ,  Toru Takeguchi ,  Nobuhiro Nakamura ,  Masaru Yamada

IPC: H01L2702

CPC classification number: H01L29/66765 ,  G02F2001/136295 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908

Abstract: A thin film transistor (TFT) device including a first electrode including at least one of a gate, a source and a drain formed on a transparent insulating substrate, an insulating film layer covering both the first electrode and the transparent insulating substrate, and a transparent film electrode formed on the insulating film layer. The first electrode includes a first layer made of pure Al or Al alloy and a second layer, formed by an impurity selected from one of N, O, Si and C, added to the Al or Al alloy. The second layer of the first electrode is provided at an interconnection between the transparent film electrode and the first layer of the first electrode.

Abstract translation: 一种薄膜晶体管（TFT）装置，包括：第一电极，其包括形成在透明绝缘基板上的栅极，源极和漏极中的至少一个;覆盖第一电极和透明绝缘基板的绝缘膜层;以及透明 膜电极形成在绝缘膜层上。 第一电极包括由纯Al或Al合金制成的第一层和由添加到Al或Al合金中的选自N，O，Si和C中的一种的杂质形成的第二层。 第一电极的第二层设置在透明膜电极和第一电极的第一层之间的互连处。

公开(公告)号：US06218206B1

公开(公告)日：2001-04-17

申请号：US09153332

申请日：1998-09-15

Applicant: Kazunori Inoue ,  Masaru Aoki ,  Munehito Kumagai ,  Shigeaki Noumi ,  Tohru Takeguchi

Inventor： Kazunori Inoue ,  Masaru Aoki ,  Munehito Kumagai ,  Shigeaki Noumi ,  Tohru Takeguchi

IPC: H01L2100

CPC classification number: H01L29/66765

Abstract: To provide a method of producing a TFT array and a liquid crystal display apparatus in which a contact resistivity of a pixel electrode and a drain electrode through a contact hole in an interlayer insulating film can be not more than 10E4&OHgr; stably. A method of producing TFT of the present invention for a liquid crystal display apparatus includes the step of forming TFT, the step of forming an interlayer insulating film, in which the surface is made to be flat so that a level difference due to the TFT area is eliminated, on a transparent insulating substrate, the step of providing a contact hole on a drain electrode of the interlayer insulating film so as to forming a pixel electrode on the interlayer insulating film so that the pixel electrode is electrically connected with the drain electrode through the contact hole, and the step of after forming the contact hole on the interlayer insulating film, applying a surface treatment for cleaning the surface of the contact portion to the surface of the substrate including the surface of the drain electrode exposed from the contact hole.

Abstract translation: 为了提供一种制造TFT阵列的方法和液晶显示装置，其中通过层间绝缘膜中的接触孔的像素电极和漏极的接触电阻率可以稳定在10E4OMEGA以下。 本发明的液晶显示装置的TFT的制造方法包括以下步骤：形成TFT，形成层间绝缘膜的步骤，其中使所述表面平坦，使得由TFT区域引起的电平差 在透明绝缘基板上消除了在层间绝缘膜的漏电极上设置接触孔的步骤，以在层间绝缘膜上形成像素电极，使得像素电极通过与漏极电连接而电连接 所述接触孔以及在所述层间绝缘膜上形成所述接触孔之后的步骤，对所述接触部的表面进行表面处理，将所述接触部的表面进行表面处理，所述表面处理包括从所述接触孔露出的所述漏电极的表面。

公开(公告)号：US09231553B2

公开(公告)日：2016-01-05

申请号：US13344274

申请日：2012-01-05

Applicant: Kazunori Inoue ,  Takashi Matsuda ,  Michio Miura

Inventor： Kazunori Inoue ,  Takashi Matsuda ,  Michio Miura

IPC: H03H9/02 ,  H03H9/72 ,  H03H9/64

CPC classification number: H03H9/02992 ,  H03H9/02952 ,  H03H9/6483 ,  H03H9/725

Abstract: A configuration that reduces a parasitic capacitance between wires is achieved at a low cost. Disclosed is an acoustic wave filter provided with a piezoelectric substrate, resonators that include a comb-shaped electrode formed on the piezoelectric substrate, a wiring portion that is connected to the comb-shaped electrode, and a dielectric layer formed to cover the comb-shaped electrode. The wiring portion is provided with a lower layer wiring portion that is disposed in the same layer as the comb-shaped electrode and an upper layer wiring portion that is disposed on the lower layer wiring portion. The upper layer wiring portion includes a region that has a wider electrode width than the electrode width of the lower layer wiring portion.

Abstract translation: 以低成本实现降低电线之间的寄生电容的结构。 公开了一种设置有压电基板的声波滤波器，包括形成在压电基板上的梳状电极的谐振器，连接到梳状电极的布线部分和形成为覆盖梳状电极的电介质层 电极。 布线部分设置有与梳状电极相同的层中的下层布线部分和布置在下层布线部分上的上层布线部分。 上层布线部分包括具有比下层布线部分的电极宽度更宽的电极宽度的区域。

公开(公告)号：US08558248B2

公开(公告)日：2013-10-15

申请号：US12234371

申请日：2008-09-19

Applicant: Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata

Inventor： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata

IPC: H01L33/00

CPC classification number: H01L23/53219 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/12438 ,  H01L2924/00

Abstract: In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.

Abstract translation: 根据本发明的一个方面，Al合金膜含有由Ni组成的第一添加元素，以及选自2A族碱土金属和3B族和4B族金属中的至少一种第二添加元素 元素周期表的周期2或3。 此外，第一添加元素的组成比为0.5〜5原子％，第二添加元素的组成比为0.1〜3原子％。

公开(公告)号：US08558226B2

公开(公告)日：2013-10-15

申请号：US13480980

申请日：2012-05-25

Applicant: Toshihiko Iwasaka ,  Kazunori Inoue ,  Masaru Aoki ,  Reiko Noguchi

Inventor： Toshihiko Iwasaka ,  Kazunori Inoue ,  Masaru Aoki ,  Reiko Noguchi

IPC: H01L33/08

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L27/1288

Abstract: Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.

Abstract translation: 本发明提供一种薄膜晶体管，其具有设置在半导体膜上的与半导体膜接触的基板，源电极和漏电极的多个部分中的半导体膜，并且彼此间隔开;以及 栅极电极，其经由栅极绝缘膜设置在所述源极电极和所述漏极电极之间; 辅助电容电极，与半导体膜接触地设置在半导体膜上; 在下层具有半导体膜的源极线从源电极延伸; 从栅电极延伸的栅极线; 与漏电极电连接的像素电极; 以及在相邻像素中将辅助电容电极彼此电连接的辅助电容电极连接线。

公开(公告)号：US20130056737A1

公开(公告)日：2013-03-07

申请号：US13604452

申请日：2012-09-05

Applicant: Kazuyuki FUJIWARA ,  Kazunori INOUE ,  Takahito YAMABE

Inventor： Kazuyuki FUJIWARA ,  Kazunori INOUE ,  Takahito YAMABE

IPC: H01L29/786

CPC classification number: H01L21/76838 ,  H01L21/283 ,  H01L27/1244 ,  H01L29/458 ,  H01L29/4908

Abstract: An Al wiring film having a tapered shape is obtained easily and in a stable manner. An Al wiring film has a double-layer structure including a first Al alloy layer made of Al or an Al alloy, and a second Al alloy layer laid on the first Al alloy layer and having a composition different from a composition of the first Al alloy layer by containing at least one element of Ni, Pd, and Pt. The second Al alloy layer is etched by an alkaline chemical solution used in a developing process of a photoresist, and an end portion of the second Al alloy layer recedes from an end portion of the photoresist. Thereafter, by performing wet etching using the photoresist as a mask, a cross section of the Al wiring film becomes a tapered shape.

Abstract translation: 容易且稳定地获得具有锥形形状的Al布线膜。 Al布线膜具有包括由Al或Al合金制成的第一Al合金层和在第一Al合金层上铺设的第二Al合金层并且具有与第一Al合金的组成不同的组成的双层结构 包含Ni，Pd和Pt中的至少一种元素。 通过用于光致抗蚀剂显影过程的碱性化学溶液蚀刻第二Al合金层，并且第二Al合金层的端部从光致抗蚀剂的端部后退。 此后，通过使用光致抗蚀剂作为掩模进行湿蚀刻，Al布线膜的截面变为锥形。

公开(公告)号：US20120299665A1

公开(公告)日：2012-11-29

申请号：US13565150

申请日：2012-08-02

Applicant: Tsuyoshi YOKOYAMA ,  Kazunori INOUE ,  Kazuhiro MATSUMOTO

Inventor： Tsuyoshi YOKOYAMA ,  Kazunori INOUE ,  Kazuhiro MATSUMOTO

IPC: H03H9/17 ,  B32B38/10 ,  B32B37/00

CPC classification number: H03H9/1092 ,  H01L2224/11 ,  H01L2924/16235 ,  H03H9/059 ,  H03H9/1085 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49131 ,  Y10T156/10

Abstract: A production method of an electronic component includes: forming a sheet having a resin layer and a metal layer formed under the resin layer; bonding the sheet to a substrate so that the metal layer is arranged on a functional portion of an acoustic wave element formed on the substrate, a frame portion surrounding the functional portion is formed between the metal layer and the substrate, a cavity is formed on the functional portion by the metal layer and the frame portion, and the resin layer covers the metal layer and the frame portion.

Abstract translation: 电子部件的制造方法包括：在树脂层的下面形成具有树脂层和金属层的片材; 将所述片材接合到基板上，使得所述金属层布置在形成在所述基板上的声波元件的功能部分上，在所述金属层和所述基板之间形成围绕所述功能部分的框架部分， 功能部分由金属层和框架部分，树脂层覆盖金属层和框架部分。

公开(公告)号：US08258891B2

公开(公告)日：2012-09-04

申请号：US12608397

申请日：2009-10-29

Applicant: Michio Miura ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

Inventor： Michio Miura ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

IPC: H03H9/25 ,  H03H9/15 ,  H03H9/70 ,  H03H9/72 ,  H03H3/02 ,  H03H3/08 ,  H03H3/04 ,  H03H3/10

CPC classification number: H03H3/10 ,  H03H9/0222 ,  H03H9/25 ,  Y10T29/42 ,  Y10T29/49005

Abstract: An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.

Abstract translation: 声波装置包括：压电基板，布置在压电基板上的叉指电极，布置在叉指电极之间的第一电介质元件，覆盖指状电极和第一电介质元件的第二电介质元件和已形成的调节元件 在第一电介质元件上。 调整元件由比重大于第一电介质元件和第二电介质元件的比重的材料形成。