公开(公告)号：US20080083921A1

公开(公告)日：2008-04-10

申请号：US11864103

申请日：2007-09-28

Applicant: Takahiro YASUE ,  Byeong-Ok CHO ,  Moon-Sook LEE

Inventor： Takahiro YASUE ,  Byeong-Ok CHO ,  Moon-Sook LEE

IPC: H01L51/30 ,  H01L51/40

CPC classification number: H01L51/005 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0075 ,  H01L51/0595

Abstract: A semiconductor memory device and a method of forming the same are disclosed. The semiconductor memory device may include a first electrode. A monolayer is coupled to the first electrode. An organic memory layer is coupled to the monolayer. A second electrode is coupled to the organic memory layer.

Abstract translation: 公开了一种半导体存储器件及其形成方法。 半导体存储器件可以包括第一电极。 单层耦合到第一电极。 有机记忆层耦合到单层。 第二电极耦合到有机存储层。

公开(公告)号：US07292469B2

公开(公告)日：2007-11-06

申请号：US11282136

申请日：2005-11-18

Applicant: Moon-Sook Lee ,  In-Gyu Baek

Inventor： Moon-Sook Lee ,  In-Gyu Baek

IPC: G11C11/00

CPC classification number: G11C13/00 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

Abstract: A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to reduce a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed.

Abstract translation: 一种对包括过渡金属氧化物层的非易失性存储器件进行编程的方法包括将第一电脉冲施加到过渡金属氧化物层第一周期以减小过渡金属氧化物层的电阻并向第二电脉冲施加第二电脉冲 过渡金属氧化物层，延长第一周期，以增加过渡金属氧化物层的电阻。 还公开了相关设备。

公开(公告)号：US20070045615A1

公开(公告)日：2007-03-01

申请号：US11465040

申请日：2006-08-16

Applicant: Byeong-Ok CHO ,  Moon-Sook LEE ,  Takahiro YASUE

Inventor： Byeong-Ok CHO ,  Moon-Sook LEE ,  Takahiro YASUE

IPC: H01L29/08

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608 ,  H01L51/0591

Abstract: A non-volatile organic resistance memory device including a first electrode, a second electrode, and a polyimide layer interposed between the first and second electrodes. The polyimide layer has a thickness such that a resistance of the polyimide layer varies in accordance with a potential difference between the first and second electrodes.

Abstract translation: 一种非易失性有机电阻存储器件，包括插在第一和第二电极之间的第一电极，第二电极和聚酰亚胺层。 聚酰亚胺层具有使得聚酰亚胺层的电阻根据第一和第二电极之间的电位差而变化的厚度。

公开(公告)号：US20060054950A1

公开(公告)日：2006-03-16

申请号：US11179319

申请日：2005-07-12

Applicant: In-Gyu Baek ,  Moon-Sook Lee

Inventor： In-Gyu Baek ,  Moon-Sook Lee

IPC: H01L29/94

CPC classification number: H01L27/115 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

Abstract translation: 提供了使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元。 非易失性存储单元包括彼此重叠的下电极和上电极。 在下电极和上电极之间设置过渡金属氧化物层图案。 过渡金属氧化物层图案由化学式M X x O Y y表示。 在化学式中，字母“M”，“O”，“x”和“y”分别表示过渡金属，氧，过渡金属组成和氧组成。 与稳定的过渡金属氧化物层图案相比，过渡金属氧化物层图案具有过量的过渡金属含量。 还提供了制造非易失性存储单元的方法。

公开(公告)号：US20060033134A1

公开(公告)日：2006-02-16

申请号：US11202985

申请日：2005-08-12

Applicant: Moon-Sook Lee

Inventor： Moon-Sook Lee

IPC: H01L29/94 ,  H01L21/8242

CPC classification number: H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

Abstract: A ferroelectric random access memory (FRAM) includes a semiconductor substrate and an interlayer insulating layer on the substrate. A diffusion preventive layer is on the interlayer insulating layer. The diffusion preventive layer and the interlayer insulating layer have two node contact holes formed therein. Node conductive layer patterns are aligned with the node contact holes, respectively, and are disposed so as to protrude upward from the diffusion preventive layer. Lower electrodes are disposed on the diffusion preventive layer that cover the node conductive layer patterns, respectively. Thicknesses of the lower electrodes are gradually reduced from a line extending from upper surfaces of the node conductive layer patterns toward the diffusion preventive layer.

公开(公告)号：US08247797B2

公开(公告)日：2012-08-21

申请号：US12814824

申请日：2010-06-14

Applicant: Seung Hun Hong ,  Byeong Ju Kim ,  Moon Sook Lee

Inventor： Seung Hun Hong ,  Byeong Ju Kim ,  Moon Sook Lee

IPC: H01L29/775 ,  H01L29/78

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  G01N27/4145 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696

Abstract: A field-effect transistor has at least one electrode disposed independently of source and drain electrodes and in direct contact with the surface of a semiconductor channel to form a schottky barrier, so that it is possible to easily control the schottky barrier.

Abstract translation: 场效应晶体管具有独立于源电极和漏电极设置的至少一个电极，并且与半导体沟道的表面直接接触以形成肖特基势垒，使得可以容易地控制肖特基势垒。

公开(公告)号：US20110263081A1

公开(公告)日：2011-10-27

申请号：US13173670

申请日：2011-06-30

Applicant: Sang-Hun Jeon ,  Moon-Sook Lee ,  Byeong-Ok Cho

Inventor： Sang-Hun Jeon ,  Moon-Sook Lee ,  Byeong-Ok Cho

IPC: H01L21/336

CPC classification number: H01L27/124 ,  B82Y10/00 ,  H01L27/095 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/45 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/7869

Abstract: A method of manufacturing a CMOS transistor can be provided by forming first and second gate electrodes on a substrate and forming a gate insulation layer on the first and second gate electrodes. A semiconductor channel material having a first conductivity type can be formed on the gate insulation layer. A pair of ohmic contacts can be formed on the semiconductor channel material such that the ohmic contacts cross over both side portions of the first gate electrode, respectively. A pair of Schottky contacts can be formed on the semiconductor channel material such that the Schottky contacts cross over both side portions of the second gate electrode, respectively.

Abstract translation: 可以通过在衬底上形成第一和第二栅电极并在第一和第二栅电极上形成栅极绝缘层来提供制造CMOS晶体管的方法。 可以在栅极绝缘层上形成具有第一导电类型的半导体沟道材料。 可以在半导体沟道材料上形成一对欧姆接触，使得欧姆接触分别跨过第一栅电极的两侧部分。 可以在半导体沟道材料上形成一对肖特基触点，使得肖特基触点分别跨过第二栅电极的两侧部分。

公开(公告)号：US08013366B2

公开(公告)日：2011-09-06

申请号：US12232243

申请日：2008-09-12

Applicant: Moon-Sook Lee ,  Byeong-Ok Cho ,  Man-Hyoung Ryoo ,  Takahiro Yasue ,  Jung-Hwan Hah

Inventor： Moon-Sook Lee ,  Byeong-Ok Cho ,  Man-Hyoung Ryoo ,  Takahiro Yasue ,  Jung-Hwan Hah

IPC: G01N27/403 ,  H01L21/00

CPC classification number: G01N27/4145 ,  B82Y10/00 ,  B82Y15/00 ,  G01N27/4146 ,  H01L51/0595 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Example embodiments relate to a biosensor using a nanoscale material as a channel of a transistor and a method of fabricating the same. A biosensor according to example embodiments may include a plurality of insulating films. A first signal line and a second signal line may be interposed between the plurality of insulating films. A semiconductor nanostructure may be disposed on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line. A plurality of probes may be coupled to the semiconductor nanostructure. A biosensor according to example embodiments may have a reduced analysis time.

Abstract translation: 实施例涉及使用纳米级材料作为晶体管的沟道的生物传感器及其制造方法。 根据示例性实施例的生物传感器可以包括多个绝缘膜。 第一信号线和第二信号线可以插入在多个绝缘膜之间。 半导体纳米结构可以设置在多个绝缘膜上，半导体纳米结构具有电连接到第一信号线的第一侧和与第二信号线电连接的第二侧。 多个探针可以耦合到半导体纳米结构。 根据示例性实施例的生物传感器可以具有减少的分析时间。

公开(公告)号：US20100224850A1

公开(公告)日：2010-09-09

申请号：US12781907

申请日：2010-05-18

Applicant: In-Gyu Baek ,  Moon-Sook Lee

Inventor： In-Gyu Baek ,  Moon-Sook Lee

IPC: H01L45/00 ,  H01L27/105

CPC classification number: H01L27/115 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

Abstract translation: 提供了使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元。 非易失性存储单元包括彼此重叠的下电极和上电极。 在下电极和上电极之间设置过渡金属氧化物层图案。 过渡金属氧化物层图案由化学式MxOy表示。 在化学式中，字母“M”，“O”，“x”和“y”分别表示过渡金属，氧，过渡金属组成和氧组成。 与稳定的过渡金属氧化物层图案相比，过渡金属氧化物层图案具有过量的过渡金属含量。 还提供了制造非易失性存储单元的方法。

公开(公告)号：US07741669B2

公开(公告)日：2010-06-22

申请号：US12200190

申请日：2008-08-28

Applicant: In-Gyu Baek ,  Moon-Sook Lee

Inventor： In-Gyu Baek ,  Moon-Sook Lee

IPC: H01L27/108 ,  H01L29/76

CPC classification number: H01L27/115 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

Abstract translation: 提供了使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元。 非易失性存储单元包括彼此重叠的下电极和上电极。 在下电极和上电极之间设置过渡金属氧化物层图案。 过渡金属氧化物层图案由化学式MxOy表示。 在化学式中，字母“M”，“O”，“x”和“y”分别表示过渡金属，氧，过渡金属组成和氧组成。 与稳定的过渡金属氧化物层图案相比，过渡金属氧化物层图案具有过量的过渡金属含量。 还提供了制造非易失性存储单元的方法。