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    METHOD OF FABRICATING DUAL HIGH-K METAL GATES FOR MOS DEVICES
    41.
    发明申请
    METHOD OF FABRICATING DUAL HIGH-K METAL GATES FOR MOS DEVICES 有权
    用于制造MOS器件的双高K金属栅的方法

    公开(公告)号：US20100052067A1

    公开(公告)日：2010-03-04

    申请号：US12424739

    申请日：2009-04-16

    Applicant: Peng-Fu Hsu ,  Kang-Cheng Lin ,  Kuo-Tai Huang

    Inventor： Peng-Fu Hsu ,  Kang-Cheng Lin ,  Kuo-Tai Huang

    IPC: H01L27/092 ,  H01L21/8234

    CPC classification number: H01L27/092 ,  H01L21/823842 ,  H01L29/49 ,  H01L29/51

    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括提供具有第一区域和第二区域的半导体衬底，在半导体衬底上形成高k电介质层，在第一区域的高k电介质层上形成覆盖层，形成第一金属层 在第一区域中的覆盖层和第二区域中的高k电介质之上，然后在第一区域中形成第一栅极堆叠，在第二区域中形成第二栅极叠层，保护第一栅极叠层中的第一金属层，同时 对所述第二栅极堆叠中的所述第一金属层进行处理工艺，以及在所述第一栅极堆叠中的所述第一金属层上方以及所述第二栅极堆叠中经处理的第一金属层之上形成第二金属层。

    METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY
    42.
    发明申请
    METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY 有权
    在高K金属门技术中提高介电质量的方法

    公开(公告)号：US20100052063A1

    公开(公告)日：2010-03-04

    申请号：US12338787

    申请日：2008-12-18

    Applicant: Yuri Masuoka ,  Peng-Fu Hsu ,  Huan-Tsung Huang ,  Kuo-Tai Huang ,  Carlos H. Diaz ,  Yong-Tian Hou

    Inventor： Yuri Masuoka ,  Peng-Fu Hsu ,  Huan-Tsung Huang ,  Kuo-Tai Huang ,  Carlos H. Diaz ,  Yong-Tian Hou

    IPC: H01L25/11 ,  H01L21/4763 ,  H01L29/78

    CPC classification number: H01L29/4925 ,  H01L21/28061 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823842 ,  H01L29/513 ,  H01L29/517

    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first active region and a second active region, providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first capping layer and a second capping layer over the high-k dielectric layer, the first capping layer overlying the first region and the second capping layer overlying the second region, forming a layer containing silicon (Si) over the first and second capping layers, forming a metal layer over the layer containing Si, and forming a first gate stack over the first region and a second gate stack over the second active region. The first gate stack includes the high-k dielectric layer, the first capping layer, the layer containing Si, and the metal layer and the second gate stack includes the high-k dielectric layer, the second capping layer, the layer containing Si, and the metal layer.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括提供具有第一有源区和第二有源区的半导体衬底，提供具有第一区域和第二区域的半导体衬底，在半导体衬底上形成高k电介质层，形成第一覆盖层和 第二覆盖层覆盖在高k电介质层上，覆盖第一区域的第一覆盖层和覆盖第二区域的第二封盖层，在第一和第二覆盖层上形成含有硅（Si）的层，形成金属层 所述层包含Si，并且在所述第一区域上形成第一栅极堆叠，并且在所述第二有源区域上形成第二栅极堆叠。 第一栅极堆叠包括高k电介质层，第一覆盖层，含有Si的层，金属层和第二栅极堆叠包括高k电介质层，第二覆盖层，含有Si的层和 金属层。

    SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
    45.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS 有权
    半导体器件和方法与双极电介质

    公开(公告)号：US20090315125A1

    公开(公告)日：2009-12-24

    申请号：US12426477

    申请日：2009-04-20

    Applicant: Fong-Yu YEN ,  Cheng-Lung HUNG ,  Peng-Fu HSU ,  Vencent S. CHANG ,  Yong-Tian HOU ,  Jin YING ,  Hun-Jan TAO

    Inventor： Fong-Yu YEN ,  Cheng-Lung HUNG ,  Peng-Fu HSU ,  Vencent S. CHANG ,  Yong-Tian HOU ,  Jin YING ,  Hun-Jan TAO

    IPC: H01L29/78

    CPC classification number: H01L29/513 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/518

    Abstract: A semiconductor device is disclosed that includes: a substrate; a first dielectric layer formed over the substrate and formed of a first high-k material, the first high-k material selected from the group consisting of HfO2, HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; a second dielectric layer formed over the first dielectric layer and formed of a second high-k material, the second high-k material being different than the first high-k material and selected from the group consisting of HfO2, HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; and a metal gate formed over the second dielectric layer. The first dielectric layer includes ions selected from the group consisting of N, O, and Si.

    Abstract translation: 公开了一种半导体器件，包括：衬底; 形成在所述衬底上并由第一高k材料形成的第一介电层，所述第一高k材料选自HfO 2，HfSiO，HfSiON，HfTaO，HfTiO，HfTiTaO，HfAlON和HfZrO; 形成在所述第一介电层上并由第二高k材料形成的第二介电层，所述第二高k材料不同于所述第一高k材料并选自HfO 2，HfSiO，HfSiON，HfTaO， HfTiO，HfTiTaO，HfAlON和HfZrO; 以及形成在第二介电层上的金属栅极。 第一电介质层包括选自N，O和Si的离子。

    Method for photoresist stripping and treatment of low-k dielectric material
    46.
    发明授权
    Method for photoresist stripping and treatment of low-k dielectric material 有权
    光刻胶剥离和低k介电材料处理方法

    公开(公告)号：US07598176B2

    公开(公告)日：2009-10-06

    申请号：US10949128

    申请日：2004-09-23

    Applicant: Jang-Shiang Tsai ,  Yi-Nien Su ,  Chung-Chi Ko ,  Jyu-Horng Shieh ,  Peng-Fu Hsu ,  Hun-Jan Tao

    Inventor： Jang-Shiang Tsai ,  Yi-Nien Su ,  Chung-Chi Ko ,  Jyu-Horng Shieh ,  Peng-Fu Hsu ,  Hun-Jan Tao

    IPC: H01L21/311

    CPC classification number: H01L21/02063 ,  G03F7/427 ,  Y10S438/958

    Abstract: A plasma processing operation uses a gas mixture of N2 and H2 to both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photoresist layer is activated and caused to complex with the low-k dielectric, maintaining a suitably high carbon content and a suitably low dielectric constant. The plasma processing operation uses a gas mixture with H2 constituting at least 10%, by volume, of the gas mixture.

    Abstract translation: 等离子体处理操作使用N 2和H 2的气体混合物来去除光致抗蚀剂膜并处理低k电介质材料。 等离子体处理操作通过在低k电介质材料上形成保护层来防止低k材料的劣化。 来自光致抗蚀剂层的碳被激活并与低k电介质复合，保持适当高的碳含量和合适的低介电常数。 等离子体处理操作使用具有构成气体混合物的至少10体积％的H 2的气体混合物。

    SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
    47.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS 有权
    半导体器件和方法与双极电介质

    公开(公告)号：US20080070395A1

    公开(公告)日：2008-03-20

    申请号：US11532308

    申请日：2006-09-15

    Applicant: Fong-Yu Yen ,  Cheng-Lung Hung ,  Peng-Fu Hsu ,  Vencent S. Chang ,  Yong-Tian Hou ,  Jin Ying ,  Hun-Jan Tao

    Inventor： Fong-Yu Yen ,  Cheng-Lung Hung ,  Peng-Fu Hsu ,  Vencent S. Chang ,  Yong-Tian Hou ,  Jin Ying ,  Hun-Jan Tao

    IPC: H01L21/3205 ,  H01L29/78 ,  H01L29/792

    CPC classification number: H01L29/513 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/518

    Abstract: A semiconductor device is disclosed that includes: a substrate; a first high-k dielectric layer; a second high-k dielectric layer formed of a different high-k material; and a metal gate. In another form, a method of forming a semiconductor device is disclosed that includes: providing a substrate; forming a first high-k dielectric layer above the substrate; forming a second dielectric layer of a different high-k material above the first dielectric layer; and forming a gate structure above the second dielectric layer. In yet another form, a method of forming a semiconductor device is disclosed that includes: providing a substrate; forming an interfacial layer above the substrate; forming a first high-k dielectric layer above the interfacial layer; performing a nitridation technique; performing an anneal; forming a second high-k dielectric layer of a different high-k material above the first dielectric layer; and forming a metal gate structure above the second dielectric layer.

    Abstract translation: 公开了一种半导体器件，包括：衬底; 第一高k电介质层; 由不同的高k材料形成的第二高k电介质层; 和金属门。 在另一种形式中，公开了一种形成半导体器件的方法，包括：提供衬底; 在所述衬底上形成第一高k电介质层; 在所述第一介电层上形成不同高k材料的第二电介质层; 以及在所述第二电介质层上形成栅极结构。 在另一种形式中，公开了一种形成半导体器件的方法，其包括：提供衬底; 在基底上形成界面层; 在界面层上形成第一高k电介质层; 进行氮化技术; 进行退火; 在所述第一介电层上形成不同高k材料的第二高k电介质层; 以及在所述第二电介质层上方形成金属栅极结构。

    Tutorial and wits-increment auto-drive toy car
    49.
    发明申请
    Tutorial and wits-increment auto-drive toy car 审中-公开
    教程和智力增量自动驾驶玩具车

    公开(公告)号：US20060246406A1

    公开(公告)日：2006-11-02

    申请号：US11104432

    申请日：2005-04-13

    Applicant: Hung-Peng Fu

    Inventor： Hung-Peng Fu

    IPC: G09B23/18

    CPC classification number: G09B23/18

    Abstract: This invention is directed to a device of “a tutorial and wits-increment auto-drive toy car”, mainly consists of a functional board and a shell body, whereas multiple buttons set up on the functional board. Each electronic component has button-holes for assembling together on the functional board. In accordance with the electronic circuit layout and forming a control circuit to produce the function, which can be controlled by sound, light, infrared or wireless tool, and then leads the directions of the car.

    Abstract translation: 本发明涉及一种“辅助和智能增量自动驾驶玩具车”的装置，主要由功能板和壳体组成，而在功能板上设置多个按钮。 每个电子部件具有用于在功能板上组装在一起的按钮孔。 根据电子电路布局和形成控制电路产生的功能，可以通过声光，红外或无线工具进行控制，然后引导汽车的方向。

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