COMPARE CIRCUIT FOR A CONTENT ADDRESSABLE MEMORY CELL
    41.
    发明申请
    COMPARE CIRCUIT FOR A CONTENT ADDRESSABLE MEMORY CELL 有权
    用于内部可寻址存储器单元的比较电路

    公开(公告)号:US20080049482A1

    公开(公告)日:2008-02-28

    申请号:US11925208

    申请日:2007-10-26

    IPC分类号: G11C15/00

    CPC分类号: G11C15/04

    摘要: A ternary content addressable memory (CAM) cell is disclosed for providing reduced or minimized matchline (ML) capacitance and for increasing current between matchline and tail-line in the case of a mismatch. The speed of a CAM cell is generally inversely proportional to its ML capacitance, and proportional to the current. Conventional ternary CAM cells have many matchline transistors, each contributing to the matchline capacitance. Embodiments of the present invention have a single matchline transistor between a matchline and a ground line, or tail-line, of the CAM cell. The single matchline transistor couples the matchline to the tail-line in response to a discharge signal from a compare circuit. The compare circuit can be divided into a pull-up section for driving a gate voltage level control node and a discharge section for discharging the gate voltage level control node, the discharge signal being provided at the gate voltage level control node.

    摘要翻译: 公开了三元内容可寻址存储器(CAM)单元,用于在不匹配的情况下提供缩减或最小化匹配线(ML)电容并用于增加匹配线和尾线之间的电流。 CAM单元的速度通常与其ML电容成反比,并且与电流成比例。 传统的三元CAM单元具有许多匹配线晶体管,每个有助于匹配线电容。 本发明的实施例在CAM单元的匹配线和接地线或尾线之间具有单个匹配线晶体管。 单个匹配线晶体管响应于来自比较电路的放电信号将匹配线耦合到尾线。 比较电路可以分为用于驱动栅极电压电平控制节点的上拉部分和用于放电栅极电压电平控制节点的放电部分,放电信号被提供在栅极电压电平控制节点处。

    Synchronous memory read data capture
    42.
    发明申请
    Synchronous memory read data capture 有权
    同步存储器读取数据采集

    公开(公告)号:US20080005518A1

    公开(公告)日:2008-01-03

    申请号:US11477659

    申请日:2006-06-30

    IPC分类号: G06F13/00

    摘要: A method of snap-shot data training to determine the optimum timing of the DQS enable signal in a single read operation is provided. This is accomplished by first writing a Gray code count sequence into the memory and then reading it back in a single burst. The controller samples the read burst at a fixed interval from the time the command was issued to determine the loop-around delay. A simple truth table lookup determines the optimum DQS enable timing for normal reads. Advantageously, during normal read operations, the first positive edge of the enabled DQS signal is used to sample a counter that is enabled every time a command is issued. If the counter sample changes, indicating timing drift has occurred, the DQS enable signal can be adjusted to compensate for the drift and maintain a position centered in the DQS preamble. This technique can also be applied to a system that uses the iterative approach to determining DQS enable timing on power up. Another embodiment of the invention is a simple, low latency clock domain crossing circuit based on the DQS latched sample of the counter.

    摘要翻译: 提供了一种快照数据训练方法,用于在单次读取操作中确定DQS使能信号的最佳定时。 这是通过首先将格雷码计数序列写入存储器,然后在单个脉冲串中读回来完成的。 控制器从发出命令的时间开始以固定的时间间隔对读取脉冲串进行采样,以确定环路延迟。 简单的真值表查找确定正常读取的最佳DQS使能定时。 有利地,在正常读取操作期间,使能的DQS信号的第一上升沿用于对每次发出命令时启用的计数器进行采样。 如果计数器样本发生变化,则指示定时漂移已经发生,可以调整DQS使能信号以补偿漂移并保持以DQS前导码为中心的位置。 该技术也可以应用于使用迭代方法来确定上电时的DQS使能定时的系统。 本发明的另一个实施例是基于柜台的DQS锁存样本的简单的低延迟时钟域交叉电路。

    Compare circuit for a content addressable memory cell
    43.
    发明授权
    Compare circuit for a content addressable memory cell 失效
    内容可寻址存储单元的比较电路

    公开(公告)号:US07304876B2

    公开(公告)日:2007-12-04

    申请号:US11534873

    申请日:2006-09-25

    IPC分类号: G11C15/00

    CPC分类号: G11C15/04

    摘要: A ternary content addressable memory (CAM) cell is disclosed for providing reduced or minimized matchline (ML) capacitance and for increasing current between matchline and tail-line in the case of a mismatch. The speed of a CAM cell is generally inversely proportional to its ML capacitance, and proportional to the current. Conventional ternary CAM cells have many matchline transistors, each contributing to the matchline capacitance. Embodiments of the present invention have a single matchline transistor between a matchline and a ground line, or tail-line, of the CAM cell. The single matchline transistor couples the matchline to the tail-line in response to a discharge signal from a compare circuit. The compare circuit can be divided into a pull-up section for driving a gate voltage level control node and a discharge section for discharging the gate voltage level control node, the discharge signal being provided at the gate voltage level control node.

    摘要翻译: 公开了三元内容可寻址存储器(CAM)单元,用于在不匹配的情况下提供缩减或最小化匹配线(ML)电容并用于增加匹配线和尾线之间的电流。 CAM单元的速度通常与其ML电容成反比,并且与电流成比例。 传统的三元CAM单元具有许多匹配线晶体管,每个有助于匹配线电容。 本发明的实施例在CAM单元的匹配线和接地线或尾线之间具有单个匹配线晶体管。 单个匹配线晶体管响应于来自比较电路的放电信号将匹配线耦合到尾线。 比较电路可以分为用于驱动栅极电压电平控制节点的上拉部分和用于放电栅极电压电平控制节点的放电部分,放电信号被提供在栅极电压电平控制节点处。

    Matchline sense circuit and method
    44.
    发明授权
    Matchline sense circuit and method 有权
    匹配线检测电路和方法

    公开(公告)号:US07251148B2

    公开(公告)日:2007-07-31

    申请号:US11269659

    申请日:2005-11-09

    IPC分类号: G11C15/00 G11C7/00

    CPC分类号: G11C7/06 G11C15/04 G11C15/043

    摘要: A matchline sense circuit for detecting a rising voltage on a matchline of a CAM array is disclosed. The circuit initially precharges a matchline to ground before turning on a current source to supply current to the matchline and raise the voltage of the matchline. A reference matchline sense circuit generates a self-timed control signal to keep the current supply turned on for a predetermined duration of time. Sensed data on the matchlines are latched after the current source is turned off and the matchlines are precharged to ground. Because the matchline sense circuit of the present invention precharges the matchlines to ground instead of the supply voltage, VDD, less power is consumed. By sensing the rise of the matchline voltage to an n-channel transistor threshold potential, the matchline sensing operation speed is increased.

    摘要翻译: 公开了一种用于检测CAM阵列的匹配线上的上升电压的匹配线检测电路。 在开启电流源以将电流提供给匹配线之前,该电路首先将匹配线预先接地,并提高匹配线的电压。 参考匹配线检测电路产生自定时控制信号以保持电流供应在预定持续时间内接通。 电流源关闭后,匹配线上的感测数据将被锁存,并将匹配线预充电到地。 因为本发明的匹配线检测电路将匹配线预充电到地电而不是电源电压VDD,所以消耗较少的功率。 通过感测匹配线电压升高到n沟道晶体管阈值电位,匹配线感测操作速度增加。

    Ternary CAM cell for reduced matchline capacitance
    45.
    发明申请
    Ternary CAM cell for reduced matchline capacitance 有权
    三元CAM单元,用于减少匹配线电容

    公开(公告)号:US20050276086A1

    公开(公告)日:2005-12-15

    申请号:US10856783

    申请日:2004-06-01

    IPC分类号: G11C15/00 G11C15/04

    CPC分类号: G11C15/04

    摘要: A ternary content addressable memory (CAM) cell is disclosed for providing reduced or minimized matchline (ML) capacitance and for increasing current between matchline and tail-line in the case of a mismatch. The speed of a CAM cell is generally inversely proportional to its ML capacitance, and proportional to the current. Conventional ternary CAM cells have many matchline transistors, each contributing to the matchline capacitance. Embodiments of the present invention have a single matchline transistor between a matchline and a ground line, or tail-line, of the CAM cell. The single matchline transistor couples the matchline to the tail-line in response to a discharge signal from a compare circuit. The compare circuit can be divided into a pull-up section for driving a gate voltage level control node and a discharge section for discharging the gate voltage level control node, the discharge signal being provided at the gate voltage level control node.

    摘要翻译: 公开了三元内容可寻址存储器(CAM)单元,用于在不匹配的情况下提供缩减或最小化匹配线(ML)电容并用于增加匹配线和尾线之间的电流。 CAM单元的速度通常与其ML电容成反比,并且与电流成比例。 传统的三元CAM单元具有许多匹配线晶体管,每个有助于匹配线电容。 本发明的实施例在CAM单元的匹配线和接地线或尾线之间具有单个匹配线晶体管。 单个匹配线晶体管响应于来自比较电路的放电信号将匹配线耦合到尾线。 比较电路可以分为用于驱动栅极电压电平控制节点的上拉部分和用于放电栅极电压电平控制节点的放电部分,放电信号被提供在栅极电压电平控制节点处。

    High bandwidth memory interface
    47.
    发明授权

    公开(公告)号:US06510503B2

    公开(公告)日:2003-01-21

    申请号:US09182494

    申请日:1998-10-30

    IPC分类号: G06F1300

    摘要: This invention describes an improved high bandwidth chip-to-chip interface for memory devices, which is capable of operating at higher speeds, while maintaining error free data transmission, consuming lower power, and supporting more load. Accordingly, the invention provides a memory subsystem comprising at least two semiconductor devices; a main bus containing a plurality of bus lines for carrying substantially all data and command information needed by the devices, the semiconductor devices including at least one memory device connected in parallel to the bus; the bus lines including respective row command lines and column command lines; a clock generator for coupling to a clock line, the devices including clock inputs for coupling to the clock line; and the devices including programmable delay elements coupled to the clock inputs to delay the clock edges for setting an input data sampling time of the memory device.

    Decimating filter
    49.
    发明授权
    Decimating filter 失效
    抽奖过滤器

    公开(公告)号:US4653017A

    公开(公告)日:1987-03-24

    申请号:US783554

    申请日:1985-10-03

    IPC分类号: H03H19/00 G06G7/00

    CPC分类号: H03H19/004

    摘要: A decimating filter utilizing first and second switched input capacitors for sampling an input signal on opposite phases of a first sampling clock signal. The switched input capacitors are connected to an integrating circuit for filtering the sampling signal. An output of the integrating circuit is sampled according to a second sampling clock signal having a frequency equal to a submultiple of the first sampling clock signal frequency. By sampling the input signal on opposite phases, the input signal is effectively sampled at twice the first sampling clock signal frequency. Accordingly, in applications involving high sampling frequencies, such as digital signal transmission, the input signal can be sampled at a sufficiently high frequency without requiring a prohibitively high input sampling clock frequency. The decimating filter is of simple design and can be inexpensively implemented on an integrated circuit chip requiring small area.

    摘要翻译: 抽取滤波器利用第一和第二开关输入电容器对第一采样时钟信号的相反相位上的输入信号进行采样。 开关输入电容器连接到用于滤波采样信号的积分电路。 积分电路的输出根据具有等于第一采样时钟信号频率的倍数的频率的第二采样时钟信号进行采样。 通过对相位相位的输入信号采样,输入信号以两倍于第一采样时钟信号频率进行有效采样。 因此,在涉及高采样频率(例如数字信号传输)的应用中,可以以足够高的频率对输入信号进行采样,而不需要非常高的输入采样时钟频率。 抽取滤波器设计简单,可以在需要小面积的集成电路芯片上廉价实施。

    TERMINATION CIRCUIT FOR ON-DIE TERMINATION
    50.
    发明申请
    TERMINATION CIRCUIT FOR ON-DIE TERMINATION 失效
    终止电路终止电路

    公开(公告)号:US20120126849A1

    公开(公告)日:2012-05-24

    申请号:US13284338

    申请日:2011-10-28

    申请人: Peter Gillingham

    发明人: Peter Gillingham

    IPC分类号: H03K19/003

    摘要: In a semiconductor device having a terminal connected to an internal portion, a termination circuit for providing on-die termination for the terminal of the device. The termination circuit comprises a plurality of transistors, including at least one NMOS transistor and at least one PMOS transistor, connected between the terminal and a power supply; and control circuitry for driving a gate of each of NMOS transistor with a corresponding NMOS gate voltage and for driving a gate of each PMOS transistor with a corresponding PMOS gate voltage, the control circuitry being configured to control the NMOS and PMOS gate voltages so as to place the transistors in an ohmic region of operation when on-die termination is enabled. The power supply supplies a voltage that is less than each said NMOS gate voltage and greater than each said PMOS gate voltage.

    摘要翻译: 在具有连接到内部部分的端子的半导体器件中,用于为器件的端子提供管芯端接的终端电路。 终端电路包括多个晶体管,其包括连接在端子和电源之间的至少一个NMOS晶体管和至少一个PMOS晶体管; 以及控制电路,用于以相应的NMOS栅极电压驱动每个NMOS晶体管的栅极并且用相应的PMOS栅极电压驱动每个PMOS晶体管的栅极,所述控制电路被配置为控制NMOS和PMOS栅极电压,以便 当使能片上端接时,将晶体管置于欧姆区域。 电源提供小于每个所述NMOS栅极电压并大于每个所述PMOS栅极电压的电压。