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公开(公告)号:US11018644B2
公开(公告)日:2021-05-25
申请号:US16695010
申请日:2019-11-25
Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd.
Inventor: XiangSheng Li , Ru Feng Du
Abstract: An audio amplifier includes: a buck controller configured to control an output voltage at a first supply terminal, the output voltage selected from a set including a plurality of output voltages, where the output voltage takes a settling time to settle; a first audio bridge including: a class-AB driver stage coupled to the first supply terminal, and a delay insertion circuit configured to receive a processed digital stream and provide the processed digital stream to the class-AB driver stage a delay time after receiving the processed digital stream, where the delay time is based on the settling time; and an audio amplitude detector configured to detect a first peak amplitude in the first digital audio stream, where the buck controller is configured to select a lowest output voltage from the set that is higher than the first peak amplitude plus a headroom voltage.
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公开(公告)号:US10725488B2
公开(公告)日:2020-07-28
申请号:US15679274
申请日:2017-08-17
Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
Inventor: Ni Zeng
IPC: G05F1/575
Abstract: A low dropout amplifier may include an error amplifier having first and second inputs coupled to a reference signal and a feedback signal, respectively. The error amplifier may be configured to generate first and second error signals at first and second outputs, respectively, with the first and second error signals based upon a difference between the reference signal and the feedback signal. A sink stage may be coupled to the first output and configured to generate a sink current based upon the first error signal. A source stage may be coupled to the second output and configured to generate a source current based upon the second error signal. An output node may be coupled to receive the sink and source currents.
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公开(公告)号:US20190049511A1
公开(公告)日:2019-02-14
申请号:US16057089
申请日:2018-08-07
Inventor: Edoardo Botti , Davide Luigi Brambilla , Hong Wu Lin
IPC: G01R31/26 , H03K17/687 , G01R19/00
Abstract: A circuit includes a field effect transistor having a gate driven via a drive signal. The field effect transistor has a drain-source voltage drop indicative of the intensity of a current flowing in the current path through the field effect transistor. The circuit also includes a pair of sensing transistors that include a first sensing field effect transistor arranged with its drain and gate coupled with the drain and the gate of the field effect transistor, respectively, and a second sensing field effect transistor having a gate configured for receiving a replica of the drive signal. The second sensing field effect transistor is arranged with its current path in series with the current path of the first sensing field effect transistor. A sensing signal at a sensing node is indicative of the current intensity flowing in the current path of the field effect transistor.
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公开(公告)号:US10193506B2
公开(公告)日:2019-01-29
申请号:US15377929
申请日:2016-12-13
Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
Inventor: Ru Feng Du , Qi Yu Liu
IPC: H03F1/32 , H03G3/34 , H03F3/45 , H03F3/187 , H03F3/217 , H03F1/02 , H04R3/00 , H03F1/30 , H03F3/183 , H03F3/185 , H03F3/21
Abstract: A class D amplifier receives and amplifies a differential analog signal which is then differentially integrated. Two pulse width modulators generate pulse signals corresponding to the differentially integrated analog signal and two power units generate output pulse signals. The outputs the power units are coupled to input terminals of integrators via a resistor feedback network. An analog output unit converts the pulse signals to an output analog signal. The differential integration circuitry implements a soft transition between mute/un-mute. In mute, the integrator output is fixed. During the soft transition, the PWM outputs change slowly from a fixed 50% duty cycle to a final value to ensure that no pop noise is present in the output as a result of mode change.
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公开(公告)号:US10141471B2
公开(公告)日:2018-11-27
申请号:US15668138
申请日:2017-08-03
Applicant: STMICROELECTRONICS (SHENZHEN) R&D CO., LTD.
Inventor: Jing-En Luan
IPC: H01L31/173 , H01L31/0203 , H01L31/0232 , G01S7/481 , G01S17/02 , G01S17/08 , H01L23/00
Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.
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公开(公告)号:US09923020B2
公开(公告)日:2018-03-20
申请号:US14750859
申请日:2015-06-25
Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
Inventor: Jing-En Luan
IPC: H01L27/146 , H04N5/369 , H01L23/00 , H04N5/225
CPC classification number: H01L27/14685 , H01L24/97 , H01L27/14618 , H01L2224/16225 , H01L2224/48095 , H01L2224/48227 , H04N5/2257 , H04N5/369
Abstract: Embodiments of the present invention provide a camera module and a method of manufacturing the same, the camera module comprising a sensor assembly, at least one semiconductor substrate, and a molding compound; wherein the sensor assembly comprises a semiconductor die, a sensor circuit disposed on the top surface of the semiconductor die, and a transparent cover coupled to the semiconductor die over the top surface of the semiconductor die; wherein each semiconductor substrate is disposed around the sensor assembly in a horizontal direction; and wherein the molding compound is filled between each semiconductor substrate and the sensor assembly.
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公开(公告)号:US20170336822A1
公开(公告)日:2017-11-23
申请号:US15671657
申请日:2017-08-08
Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
Inventor: Yong Feng Liu
IPC: G05F3/26
CPC classification number: G05F3/267
Abstract: A Schmitt trigger circuit having an input coupled to a current summing junction. A trickle current source generates a trickle current applied to the current summing junction. A bandgap current source generates a bandgap current applied to the current summing junction (wherein the bandgap current is fixed when a supply voltage exceeds a threshold). A variable current source generates a variable current applied to the current summing junction (wherein the variable current varies dependent on the supply voltage). At the current summing junction, the variable current is offset against the trickle and bandgap currents with respect to generating a voltage that is sensed at the Schmitt trigger circuit input.
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公开(公告)号:US09778670B2
公开(公告)日:2017-10-03
申请号:US14267957
申请日:2014-05-02
Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd.
Inventor: Ni Zeng
IPC: G05F1/573
CPC classification number: G05F1/573
Abstract: A current limiting circuit includes a current sensing module that is configured to sense an output current of a power transistor and to generate a corresponding sensing current which is proportional to the output current. A first current limiting module coupled to the current sensing module is configured to generate a first limiting current based on the sensing current when a variation of the output current of the power transistor exceeds a first current level. A second current limiting module coupled to the current sensing module is configured to generate a second limiting current based on the sensing current when a variation of the output current of the power transistor exceeds a second current level. A converting module coupled to the first and second current limiting modules and the power transistor controls a gate voltage of the power transistor based at least on the first and second limiting currents.
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公开(公告)号:US20170236468A1
公开(公告)日:2017-08-17
申请号:US15585677
申请日:2017-05-03
Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
Inventor: Meng Wang , Tao Tao Huang
IPC: G09G3/3225 , H03K5/12 , H03K17/687 , G09G3/36
CPC classification number: G09G3/3225 , G09G3/20 , G09G3/3208 , G09G3/3648 , G09G2300/0842 , G09G2310/0259 , G09G2310/0291 , G09G2320/041 , G09G2320/043 , G09G2330/02 , G09G2330/025 , G09G2330/028 , H02M3/158 , H03K5/12 , H03K17/04123 , H03K17/687 , H03K2217/0063 , H03K2217/0072
Abstract: A low side driver includes a first transistor coupled in series with a second transistor at a low side voltage node for a load. A capacitance is configured to store a voltage and a voltage buffer circuit has an input coupled to receive the voltage stored by the capacitance and an output coupled to drive a control node of the second transistor with the stored voltage. A current source supplies current through a switch to the capacitance and the input of the voltage buffer circuit. The switch is configured to be actuated by an oscillating enable signal so as to cyclically source current from the current source to the capacitance and cause a stepped increase in the stored voltage which is applied by the buffer circuit to the control node of the second transistor.
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公开(公告)号:US20170093348A1
公开(公告)日:2017-03-30
申请号:US15377929
申请日:2016-12-13
Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
Inventor: Ru Feng Du , Qi Yu Liu
CPC classification number: H03F1/3205 , H03F1/0205 , H03F1/305 , H03F3/183 , H03F3/185 , H03F3/187 , H03F3/211 , H03F3/2171 , H03F3/2173 , H03F3/45179 , H03F2200/03 , H03F2200/351 , H03F2203/21106 , H03F2203/45151 , H03F2203/45156 , H03G3/345 , H03G3/348 , H04R3/002
Abstract: A class D amplifier receives and amplifies a differential analog signal which is then differentially integrated. Two pulse width modulators generate pulse signals corresponding to the differentially integrated analog signal and two power units generate output pulse signals. The outputs the power units are coupled to input terminals of integrators via a resistor feedback network. An analog output unit converts the pulse signals to an output analog signal. The differential integration circuitry implements a soft transition between mute/un-mute. In mute, the integrator output is fixed. During the soft transition, the PWM outputs change slowly from a fixed 50% duty cycle to a final value to ensure that no pop noise is present in the output as a result of mode change.
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