公开(公告)号：US20130224083A1

公开(公告)日：2013-08-29

申请号：US13858558

申请日：2013-04-08

Applicant: STMicroelectronics S.r.I.

Inventor： Sabrina Conoci ,  Salvatore Petralia ,  Salvatore Sortino

IPC: C07C211/52 ,  C07C323/29

CPC classification number: C07C211/52 ,  A61K31/04 ,  A61K33/00 ,  B01J19/123 ,  B01J2219/089 ,  C01B21/24 ,  C07C323/29 ,  A61K2300/00

Abstract: The present invention relates to the use of a nitroaniline derivative of Formula I for the production of nitric oxide and for the preparation of a medicament for the treatment of a disease wherein the administration of nitric oxide is beneficial. The present invention furthermore relates to a method for the production of NO irradiating a nitroaniline derivative of Formula I, a kit comprising a nitroaniline derivative of Formula I and a carrier and to a system comprising a source of radiations and a container associated to a nitroaniline derivative of Formula I. In Formula I, R and RI are each independently hydrogen or a C1-C3 alkyl group; RII is hydrogen or an alkyl group.

Abstract translation: 本发明涉及式I的硝基苯胺衍生物在制备一氧化氮中的用途以及用于制备治疗其中一氧化氮的给药有益的药物的用途。 本发明还涉及一种用于制备辐射式I的硝基苯胺衍生物的NO的方法，该试剂盒包含式I的硝基苯胺衍生物和载体，以及包含辐射源和与硝基苯胺衍生物相关的容器的体系 在式I中，R 1和R 2各自独立地为氢或C 1 -C 3烷基; RII是氢或烷基。

公开(公告)号：US20130169302A1

公开(公告)日：2013-07-04

申请号：US13714553

申请日：2012-12-14

Applicant: STMicroelectronics S.r.I.

Inventor： Raffaele Ricci

IPC: G01R31/28

CPC classification number: G01R31/2887 ,  G01R31/2863 ,  H05K1/0268 ,  H05K3/325 ,  H05K2201/10325 ,  H05K2201/10598

Abstract: High precision connectivity for a device under test (DUT) in an electronic test system at reduced cost and superior performance characteristics is provided by incorporating an appropriate contact structure into a printed circuit board (PCB) of the electronic test system. Alternatively, a superior adapter that is formed on the basis of highly precise volume production techniques, for example using well-established semiconductor materials and related manufacturing techniques, is provided to support high precision connectivity.

Abstract translation: 通过在电子测试系统的印刷电路板（PCB）中引入适当的接触结构，可以降低成本和优异的性能特性，为电子测试系统中被测设备（DUT）提供高精度连接。 或者，提供了基于高精度体积生产技术形成的优良适配器，例如使用已确立的半导体材料和相关制造技术，以支持高精度连接性。

公开(公告)号：US20130057323A1

公开(公告)日：2013-03-07

申请号：US13666853

申请日：2012-11-01

Applicant: STMicroelectronics S.r.I.

Inventor： Claudio Spini ,  Claudio Adragna

IPC: H03K5/1534

CPC classification number: H02M3/33507 ,  H02M3/33515 ,  H02M3/33553

Abstract: An integrated control circuit of a switch is described, which is adapted to open or close a current path; said integrated circuit includes a comparator to compare a first signal with a second signal representative of the current flowing through said current path. The comparator outputs a third variable signal between a low logic level and a high logic level according to whether said second signal is lower than said first signal or vice versa; the integrated circuit has a driver to generate a signal to drive said switch in response to the third signal, and is configured to detect a spike on the leading edge of said second signal and to blank said third signal for a first blanking time period which depends on a turn-on delay of said switch and a second blanking period which depends on the duration of said spike on the leading edge of said second signal.

Abstract translation: 描述了开关的集成控制电路，其适于打开或关闭电流路径; 所述集成电路包括比较器，用于将第一信号与表示流过所述电流路径的电流的第二信号进行比较。 所述比较器根据所述第二信号是否低于所述第一信号而输出低逻辑电平和高逻辑电平之间的第三可变信号，反之亦然; 所述集成电路具有驱动器，以产生响应于所述第三信号来驱动所述开关的信号，并且被配置为检测所述第二信号的前沿上的尖峰，并且将所述第三信号置为空白，所述第一消隐时间段取决于 在所述开关的导通延迟上，以及取决于所述第二信号的前沿上的所述尖峰的持续时间的第二消隐周期。

公开(公告)号：US20040235149A1

公开(公告)日：2004-11-25

申请号：US10874902

申请日：2004-06-23

Applicant: STMicroelectronics S.r.I.

Inventor： Gabriele Barlocchi ,  Flavio Villa

IPC: C12M001/34

CPC classification number: B01L7/52 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0825 ,  B01L2300/1827 ,  B01L2300/1883

Abstract: Integrated microreactor, formed in a monolithic body and including a semiconductor material region and an insulating layer; a buried channel extending in the semiconductor material region; a first and a second access trench extending in the semiconductor material region and in the insulating layer, and in communication with the buried channel; a first and a second reservoir formed on top of the insulating layer and in communication with the first and the second access trench; a suspended diaphragm formed by the insulating layer, laterally to the buried channel; and a detection electrode, supported by the suspended diaphragm, above the insulating layer, and inside the second reservoir.

Abstract translation: 集成的微反应器，形成在一体的整体中并且包括半导体材料区域和绝缘层; 在半导体材料区域中延伸的掩埋沟道; 在所述半导体材料区域和所述绝缘层中延伸并与所述掩埋沟道连通的第一和第二访问沟槽; 第一和第二储存器，其形成在所述绝缘层的顶部上并且与所述第一和第二接入沟槽连通; 由绝缘层形成的悬浮膜，横向于埋设通道; 以及由悬挂隔膜支撑的检测电极，在绝缘层上方和第二储存器内部。

公开(公告)号：US20040223616A1

公开(公告)日：2004-11-11

申请号：US10818695

申请日：2004-04-06

Applicant: STMicroelectronics S.r.I.

Inventor： Ljupco Kocarev ,  Zarko Tasev ,  Paolo Amato ,  Gianguido Rizzotto

IPC: H04L009/00

CPC classification number: H04L9/001 ,  H04L9/3013 ,  H04L9/302 ,  H04L9/3093

Abstract: An encryption process includes choosing a secret key and a set of permutable functions defined on a phase space for encrypting/decrypting messages, choosing a code for encoding messages to be sent as a number belonging to the phase space. The set of permutable functions includes chaotic maps generated by a composite function of first and second functions, and an inverse of the first function. The secret key is defined by the second function.

Abstract translation: 加密过程包括：选择用于对消息进行加密/解密的相位空间上定义的秘密密钥和一组置换函数，选择用于编码要作为属于相位空间的数字发送的消息的代码。 可置换函数的集合包括由第一和第二函数的复合函数产生的混沌映射，以及第一函数的逆。 秘密密钥由第二个功能定义。

公开(公告)号：US20040223361A1

公开(公告)日：2004-11-11

申请号：US10779856

申请日：2004-02-17

Applicant: STMicroelectronics S.r.I.

Inventor： Antonino La Malfa ,  Marco Messina

IPC: G11C011/00

CPC classification number: G11C16/12

Abstract: Described herein is a method for soft-programming an electrically erasable nonvolatile memory device, wherein soft-programming is carried out with a soft-programming multiplicity equal to twice that used for writing data in the memory device until the current absorbed during soft-programming is smaller than or equal to the maximum current which is available for writing operations and which can be generated within the memory device, and with a soft-programming multiplicity equal to the one used for writing data in the memory device in the case where the current absorbed during soft-programming with double multiplicity is greater than the maximum current which is available for writing operations and which can be generated within the memory device.

Abstract translation: 这里描述了一种用于软编程电可擦除非易失性存储器件的方法，其中以软编程多重性等于用于在存储器件中写入数据的两倍的软编程来执行软编程，直到在软编程期间吸收的电流为 小于或等于可用于写入操作并且可以在存储器件内产生的最大电流，并且在电流吸收的情况下具有与用于在存储器件中写入数据的软编程多重性相等的软编程倍数 在具有双重多重性的软编程期间，大于可用于写入操作的最大电流，并且可以在存储器件内生成。

公开(公告)号：US20040156235A1

公开(公告)日：2004-08-12

申请号：US10719650

申请日：2003-11-21

Applicant: STMicroelectronics S.r.I.

Inventor： Andrea Bellini ,  Mauro Sali ,  Alessandro Magnavacca ,  Carlo Lisi

IPC: G11C011/34

CPC classification number: G11C16/26 ,  G11C16/344 ,  G11C2216/22

Abstract: A nonvolatile memory device with simultaneous read/write has a memory array formed by a plurality of cells organized into memory banks, and a plurality of first and second sense amplifiers. The device further has a plurality of R/W selectors associated to respective sets of cells and connecting the cells of the respective sets of cells alternately to the first sense amplifiers and to the second sense amplifiers.

Abstract translation: 具有同时读/写的非易失性存储器件具有由组织到存储体中的多个单元形成的存储器阵列以及多个第一和第二读出放大器。 该装置还具有与相应的单元组相关联的多个R / W选择器，并将各组单元的单元交替地连接到第一读出放大器和第二读出放大器。

公开(公告)号：US20040137169A1

公开(公告)日：2004-07-15

申请号：US10686556

申请日：2003-10-14

Applicant: STMicroelectronics S.r.I.

Inventor： Enzo Carollo

IPC: H05H001/24

CPC classification number: H01L21/3145 ,  C23C16/345 ,  C23C16/455 ,  C23C16/507 ,  H01L21/3144 ,  H01L21/3185

Abstract: A high-density plasma process is proposed for depositing a layer of Silicon Nitride on a substrate in a plasma reactor. The process includes the steps of: providing a gas including precursor components of the Silicon Nitride, generating a plasma applying a radio-frequency power to the gas, and the plasma reacting with the substrate to deposit the layer of Silicon Nitride. The power applied to the gas is in the range from 2.5 kW to 4 kW.

Abstract translation: 提出了一种高等离子体工艺，用于在等离子体反应器中的衬底上沉积氮化硅层。 该方法包括以下步骤：提供包括氮化硅的前体成分的气体，产生对气体施加射频功率的等离子体，并且等离子体与衬底反应以沉积氮化硅层。 施加到气体的功率在2.5kW至4kW的范围内。

公开(公告)号：US20040135908A1

公开(公告)日：2004-07-15

申请号：US10696396

申请日：2003-10-29

Applicant: STMicroelectronics S.r.I.

Inventor： Francesco Pappalardo ,  Alessandro Capra ,  Massimo Mancuso ,  Herve Broquin ,  Paolo Antonino Fodera ,  Elena Salurso

IPC: H04N005/335

CPC classification number: H04N1/648

Abstract: Digital video signals, such as the signals generated by an image sensor in a Bayer format, are converted into an encoded format. In the Bayer format, the pixels of each line are alternately coded with two colors, and then converted into the encoded format. In the encoded format, the pixels of the digital video signals are reordered into sets of adjacent pixels, such that the sets group pixels coded with the same color. The encoded signal data results in a reduced switching activity when transmitted over a bus.

Abstract translation: 诸如由拜耳格式的图像传感器产生的信号的数字视频信号被转换成编码格式。 在拜耳格式中，每行的像素被交替地用两种颜色编码，然后被转换为编码格式。 在编码格式中，将数字视频信号的像素重新排列成相邻像素的集合，使得组合像素以相同颜色编码。 编码的信号数据在总线上传输时导致切换活动降低。

公开(公告)号：US20040073586A1

公开(公告)日：2004-04-15

申请号：US10651075

申请日：2003-08-28

Applicant: STMicroelectronics S.r.I.

Inventor： Daniele Lo Iacono

IPC: G06F007/38

CPC classification number: G06F7/5055 ,  G06F7/48 ,  G06F7/49921

Abstract: A method for incrementing, decrementing or two's complementing a first string of bits includes generating an auxiliary string of bits as a function of the first string, and logically combining the auxiliary string with the first string to generate a corresponding output string. A least significant bit of the auxiliary string is independent from the bits of the first string, and any other bit of the auxiliary string. The method is particularly convenient for generating an overflow flag when the number to be output exceeds the representation interval. An overflow flag is generated by logically combining the most significant bits of the first and auxiliary strings.

Abstract translation: 用于递增，递减或二进制补码第一比特串的方法包括生成辅助字符串作为第一字符串的函数，并将辅助字符串与第一字符串逻辑组合以生成相应的输出字符串。 辅助字符串的最低有效位与第一个字符串的位和辅助字符串的任何其他位无关。 当要输出的数字超过表示间隔时，该方法特别方便生成溢出标志。 通过逻辑组合第一和辅助字符串的最高有效位来产生溢出标志。