Methods of manufacturing three-dimensional semiconductor devices and related devices
    41.
    发明授权
    Methods of manufacturing three-dimensional semiconductor devices and related devices 有权
    制造三维半导体器件及相关器件的方法

    公开(公告)号:US08394716B2

    公开(公告)日:2013-03-12

    申请号:US12963241

    申请日:2010-12-08

    IPC分类号: H01L21/44

    摘要: A three-dimensional semiconductor device may include a substrate including wiring and contact regions and a thin film structure on the wiring and contact regions of the substrate. The thin-film structure may include a plurality of alternating wiring layers and inter-layer insulating layers defining a terraced structure in the contact region so that each of the wiring layers includes a contact surface in the contact region that extends beyond others of the wiring layers more distant from the substrate. A plurality of contact structures may extend in a direction perpendicular to a surface of the substrate with each of the contact structures being electrically connected to a contact surface of a respective one of the wiring layers. Related methods are also discussed.

    摘要翻译: 三维半导体器件可以包括在基板的布线和接触区域上包括布线和接触区域以及薄膜结构的基板。 薄膜结构可以包括在接触区域中限定梯形结构的多个交替布线层和层间绝缘层,使得每个布线层包括在接触区域中延伸超过其它布线层的接触表面 离衬底更远。 多个接触结构可以在垂直于衬底的表面的方向上延伸,其中每个接触结构电连接到相应的一个接线层的接触表面。 还讨论了相关方法。

    Light emitting device, light emitting device package and lighting system
    43.
    发明授权
    Light emitting device, light emitting device package and lighting system 有权
    发光器件,发光器件封装和照明系统

    公开(公告)号:US08314422B2

    公开(公告)日:2012-11-20

    申请号:US12945409

    申请日:2010-11-12

    申请人: Sung Min Hwang

    发明人: Sung Min Hwang

    IPC分类号: H01L29/40 H01L29/88

    摘要: A light emitting device is provided. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first dielectric layer over a cavity where a part of the light emitting structure is removed, a second electrode layer over the first dielectric layer, a second dielectric layer over the light emitting structure above the cavity, and a first electrode over the second dielectric layer.

    摘要翻译: 提供了一种发光器件。 发光器件包括发光结构,其包括第一导电半导体层,有源层和第二导电半导体层,在去除发光结构的一部分的空腔上的第一电介质层, 第一电介质层,位于空腔上方的发光结构上的第二电介质层和位于第二介电层上的第一电极。

    Light Emitting Device
    44.
    发明申请
    Light Emitting Device 有权
    发光装置

    公开(公告)号:US20120091497A1

    公开(公告)日:2012-04-19

    申请号:US13330207

    申请日:2011-12-19

    申请人: Sung Min Hwang

    发明人: Sung Min Hwang

    IPC分类号: H01L33/02

    摘要: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer is partially exposed; a first region having a first concentration and provided at a region of the second conductive type semiconductor layer; a second region having a second concentration and provided at another region of the second conductive type semiconductor layer; and a second electrode over the second conductive type semiconductor layer.

    摘要翻译: 实施例涉及发光器件,发光器件封装和照明系统。 发光器件包括:衬底; 在所述基板上的发光结构,所述发光结构包括第一导电类型半导体层,第二导电类型半导体层和在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层,其中所述第一导电 半导体层部分露出; 具有第一浓度并设置在所述第二导电型半导体层的区域的第一区域; 具有第二浓度并设置在所述第二导电类型半导体层的另一区域的第二区域; 以及位于第二导电类型半导体层上的第二电极。

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM
    46.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM 有权
    发光装置,发光装置包装和照明系统

    公开(公告)号:US20110248300A1

    公开(公告)日:2011-10-13

    申请号:US12945409

    申请日:2010-11-12

    申请人: Sung Min HWANG

    发明人: Sung Min HWANG

    IPC分类号: H01L33/48 H01L33/60

    摘要: A light emitting device is provided. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first dielectric layer over a cavity where a part of the light emitting structure is removed, a second electrode layer over the first dielectric layer, a second dielectric layer over the light emitting structure above the cavity, and a first electrode over the second dielectric layer.

    摘要翻译: 提供了一种发光器件。 发光器件包括发光结构,其包括第一导电半导体层,有源层和第二导电半导体层,在去除发光结构的一部分的空腔上的第一电介质层, 第一电介质层,位于空腔上方的发光结构上的第二电介质层和位于第二介电层上的第一电极。

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM
    47.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM 有权
    发光装置,发光装置包装和照明系统

    公开(公告)号:US20110233602A1

    公开(公告)日:2011-09-29

    申请号:US13028808

    申请日:2011-02-16

    申请人: Sung Min HWANG

    发明人: Sung Min HWANG

    IPC分类号: H01L33/42 H01L33/40

    摘要: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, which are formed on the substrate such that a part of the first conductive semiconductor layer is exposed upward; schottky contact regions on the second conductive semiconductor layer; a second electrode on the second conductive semiconductor layer; and a first electrode on the exposed first conductive semiconductor layer, wherein a distance between the schottky contact regions narrowed as the schottky contact regions are located closely to a mesa edge region.

    摘要翻译: 公开了一种发光器件,发光器件封装和照明系统。 发光器件包括衬底; 形成在基板上的发光结构,其包括第一导电半导体层,有源层和第二导电半导体层,使得第一导电半导体层的一部分向上露出; 第二导电半导体层上的肖特基接触区域; 在所述第二导电半导体层上的第二电极; 以及在所述暴露的第一导电半导体层上的第一电极,其中所述肖特基接触区域之间的距离随着所述肖特基接触区域紧密地位于台面边缘区域而变窄。

    Light Emitting Device, Light Emitting Device Package And Lighting System
    48.
    发明申请
    Light Emitting Device, Light Emitting Device Package And Lighting System 有权
    发光装置,发光装置封装和照明系统

    公开(公告)号:US20110233515A1

    公开(公告)日:2011-09-29

    申请号:US13026384

    申请日:2011-02-14

    申请人: Sung Min Hwang

    发明人: Sung Min Hwang

    IPC分类号: H01L33/06 H01L33/48

    摘要: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, which are formed on the substrate such that a part of the first conductive semiconductor layer is exposed; a dielectric layer formed from a top surface of the second conductive semiconductor layer to an exposed top surface of the first conductive semiconductor layer; a second electrode on the second conductive semiconductor layer; and a first electrode on the exposed top surface of the first conductive semiconductor layer while making contact with a part of the dielectric layer on the second conductive semiconductor layer.

    摘要翻译: 公开了一种发光器件,发光器件封装和照明系统。 发光装置包括:基板; 形成在所述基板上的第一导电半导体层,有源层和第二导电半导体层的发光结构,使得所述第一导电半导体层的一部分露出; 电介质层,由所述第二导电半导体层的顶表面形成到所述第一导电半导体层的暴露的顶表面; 在所述第二导电半导体层上的第二电极; 以及在第一导电半导体层的暴露的顶表面上与第二导电半导体层上的介电层的一部分接触的第一电极。

    THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    49.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    三维半导体器件及其制造方法

    公开(公告)号:US20110180941A1

    公开(公告)日:2011-07-28

    申请号:US13012485

    申请日:2011-01-24

    IPC分类号: H01L23/52 H01L21/28

    摘要: Provided is a three-dimensional semiconductor device and method for fabricating the same. The device includes a first electrode structure and a second electrode structure stacked sequentially on a substrate. The first and second electrode structures include stacked first electrodes and stacked second electrodes, respectively. Each of the first and second electrodes includes a horizontal portion parallel with the substrate and an extension portion extending from the horizontal portion along a direction penetrating an upper surface of the substrate. Here, the substrate may be closer to top surfaces of the extension portions of the first electrodes than to the horizontal portion of at least one of the second electrodes.

    摘要翻译: 提供一种三维半导体器件及其制造方法。 该装置包括依次堆叠在基板上的第一电极结构和第二电极结构。 第一和第二电极结构分别包括堆叠的第一电极和堆叠的第二电极。 第一和第二电极中的每一个包括平行于基板的水平部分和从穿过基板的上表面的方向从水平部分延伸的延伸部分。 这里,衬底可以比第一电极的延伸部分的顶表面更靠近至少一个第二电极的水平部分。

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM
    50.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM 有权
    发光装置,发光装置包装和照明系统

    公开(公告)号:US20110095306A1

    公开(公告)日:2011-04-28

    申请号:US12909184

    申请日:2010-10-21

    IPC分类号: H01L33/00

    摘要: Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a second electrode under the second conductive semiconductor layer; a first texture over a first region of the first conductive semiconductor layer; an A-electrode over the first region of the first conductive semiconductor layer; and a B-electrode over a second region of the first conductive semiconductor layer, wherein the B-electrode includes a pad electrode connected to a wire.

    摘要翻译: 公开了一种发光器件,发光器件封装和照明系统。 本实施例的发光器件包括发光结构,其包括第一导电半导体层,第二导电半导体层和在第一和第二导电半导体层之间的有源层; 在第二导电半导体层下方的第二电极; 在所述第一导电半导体层的第一区域上的第一纹理; 在所述第一导电半导体层的所述第一区域上方的A电极; 以及在所述第一导电半导体层的第二区域上的B电极,其中所述B电极包括连接到导线的焊盘电极。