公开(公告)号：US07863611B2

公开(公告)日：2011-01-04

申请号：US11269646

申请日：2005-11-09

申请人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L31/20

CPC分类号： H01L29/7869

摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

摘要翻译： 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

公开(公告)号：US20090278122A1

公开(公告)日：2009-11-12

申请号：US12504116

申请日：2009-07-16

申请人： Hideo HOSONO ,  Masahiro HIRANO ,  Hiromichi OTA ,  Toshio KAMIYA ,  Kenji NOMURA

发明人： Hideo HOSONO ,  Masahiro HIRANO ,  Hiromichi OTA ,  Toshio KAMIYA ,  Kenji NOMURA

IPC分类号： H01L29/26

CPC分类号： H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

公开(公告)号：US20090218449A1

公开(公告)日：2009-09-03

申请号：US12300449

申请日：2007-05-02

申请人： Toshio Kamiya ,  Ken Maeda ,  Tatsuaki Hashimoto ,  Shinichiro Sakai

发明人： Toshio Kamiya ,  Ken Maeda ,  Tatsuaki Hashimoto ,  Shinichiro Sakai

IPC分类号： B64G1/28 ,  B64G1/24

CPC分类号： B64G1/24 ,  B64G1/283 ,  B64G1/286 ,  B64G1/36 ,  B64G1/38 ,  G05D1/0883

摘要： In order to control an attitude of a movable object having a flexible member (50) through an attitude maneuver, first, based on vibration of the flexible member at the time of the attitude maneuver, for example, a sampling function including no frequency components equal to or higher than a particular frequency is obtained. With the use of the sampling function, a control target value is created as a previously-frequency-shaping-type feedforward control law. Based on the control target value, attitude control data is created. The attitude control data can be used for the attitude maneuver with respect to the movable object.

摘要翻译： 为了通过姿态机动来控制具有柔性构件（50）的可移动物体的姿态，首先，基于姿态机动时的柔性构件的振动，例如，不包括频率成分相等的取样函数 达到或高于特定频率。 利用采样功能，创建控制目标值作为先前频率整形型的前馈控制定律。 基于控制目标值，创建姿态控制数据。 姿态控制数据可以用于相对于可移动物体的姿态操纵。

公开(公告)号：US20090179199A1

公开(公告)日：2009-07-16

申请号：US12406464

申请日：2009-03-18

申请人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/12

CPC分类号： H01L29/78693 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

摘要翻译： 提供了可应用于例如TFT的有源层的新颖的无定形氧化物。 无定形氧化物包括微晶。

公开(公告)号：US20090039202A1

公开(公告)日：2009-02-12

申请号：US12191389

申请日：2008-08-14

申请人： Keita Ogo ,  Toshio Kamiya ,  Ken Maeda

发明人： Keita Ogo ,  Toshio Kamiya ,  Ken Maeda

IPC分类号： B64G1/28 ,  B64G1/24

CPC分类号： B64G1/286 ,  B64G2001/245

摘要： Disclosed is an attitude change control system that is designed to efficiently output a torque for attitude change of a space craft using CMGs and realizes a real time CMG driving rule. A CMG gimbal steering law 15 generates target profiles for setting angle and angular velocity for each gimbal by applying an anisotropic weighted gradient method based upon the necessary torque calculated by a feed back controller 13 and a feed forward controller 14 from the angle and angular velocity in the target direction from the attitude navigator 12 and the current angle and angular velocity of the space craft estimated by the attitude estimator 11 as well as the current condition of each gimbal from the CMG 40, thereby controlling the CMG 40 for changing the attitude of the space craft dynamics 50 to the target direction.

摘要翻译： 公开了一种姿态改变控制系统，其被设计为有效地输出用于使用CMG的航天飞机姿态变化的扭矩并实现实时CMG驱动规则。 CMG万向节转向规则15通过基于由反馈控制器13和前馈控制器14计算出的必要扭矩，通过从角度和角速度来计算每个万向节的角度和角速度来生成用于设置每个万向节的角度和角速度的目标轮廓 来自姿态导航仪12的目标方向以及由姿态估计器11估计的航天飞船的当前角度和角速度以及来自CMG 40的每个万向节的当前状态，从而控制CMG 40改变姿态 太空工艺动力50目标方向。

公开(公告)号：US20080203230A1

公开(公告)日：2008-08-28

申请号：US12027769

申请日：2008-02-07

申请人： KEITA OGO ,  Toshio Kamiya ,  Ken Maeda

发明人： KEITA OGO ,  Toshio Kamiya ,  Ken Maeda

IPC分类号： B64G1/28

CPC分类号： B64G1/286 ,  G05D1/0883

摘要： Disclosed is an attitude change control system that is designed to efficiently output a torque for attitude change of a space craft using CMGs and realizes a real time CMG driving rule. A CMG gimbal steering law 15 generates target profiles for setting angle and angular velocity for each gimbal by applying an anisotropic weighted gradient method based upon the necessary torque calculated by a feed back controller 13 and a feed forward controller 14 from the angle and angular velocity in the target direction from the attitude navigator 12 and the current angle and angular velocity of the space craft estimated by the attitude estimator 11 as well as the current condition of each gimbal from the CMG 40, thereby controlling the CMG 40 for changing the attitude of the space craft dynamics 50 to the target direction.

摘要翻译： 公开了一种姿态改变控制系统，其被设计为有效地输出用于使用CMG的航天飞机姿态变化的扭矩并实现实时CMG驱动规则。 CMG万向节转向规则15通过基于由反馈控制器13和前馈控制器14计算出的必要扭矩，通过从角度和角速度来计算每个万向节的角度和角速度来生成用于设置每个万向节的角度和角速度的目标轮廓 来自姿态导航仪12的目标方向以及由姿态估计器11估计的航天飞船的当前角度和角速度以及来自CMG 40的每个万向节的当前状态，从而控制CMG 40改变姿态 太空工艺动力50目标方向。

公开(公告)号：US20060110867A1

公开(公告)日：2006-05-25

申请号：US11269641

申请日：2005-11-09

申请人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L21/84

CPC分类号： H01L29/78618 ,  H01L29/66969 ,  H01L29/78693

摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

摘要翻译： 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

公开(公告)号：US20050039670A1

公开(公告)日：2005-02-24

申请号：US10494247

申请日：2002-10-31

申请人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

发明人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

IPC分类号： C30B23/02 ,  H01L21/336 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  C30B1/00

CPC分类号： H01L29/7869 ,  C30B23/02 ,  C30B29/22 ,  C30B29/68 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693

摘要： Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

摘要翻译： 公开了一种天然超晶格同源单晶薄膜，其包括外延生长在单晶衬底上形成的ZnO外延薄膜中的任何一种上的复合氧化物，ZnO外延消失后的单晶衬底 薄膜和ZnO单晶。 复合氧化物用下式表示：M 1 M 2 O 3（ZnO）m，其中M 1是选自Ga，Fe，Sc，In，Lu，Yb中的至少一种 ，Tm，Er，Ho和Y，M 2为选自Mn，Fe，Ga，In和Al中的至少一种，m为1以上的自然数。 通过沉积复合氧化物并使得到的层状膜进行热退火处理而形成的天然超晶格同晶单晶薄膜可以用于最佳器件，电子器件和X射线光学器件中。

公开(公告)号：US09947803B2

公开(公告)日：2018-04-17

申请号：US13097572

申请日：2011-04-29

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L21/336 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/28 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12

CPC分类号： H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

公开(公告)号：US09269826B2

公开(公告)日：2016-02-23

申请号：US12984960

申请日：2011-01-05

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/28 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12

CPC分类号： H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

摘要翻译： 本发明涉及使用该无定形氧化物的无定形氧化物和薄膜晶体管。 特别地，本发明提供了电子载流子浓度小于1018 / cm3的非晶氧化物，以及使用这种无定形氧化物的薄膜晶体管。 在具有源电极6，漏电极5，栅电极4，栅极绝缘膜3和沟道层2的薄膜晶体管中，使用电子载流子浓度小于1018 / cm3的非晶氧化物 通道层2。