中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

53 records (took 0.024 seconds)

    Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices
    41.
    发明申请
    Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices 有权
    磁阻设备，包括其的信息存储设备和操作信息存储设备的方法

    公开(公告)号：US20110085258A1

    公开(公告)日：2011-04-14

    申请号：US12801712

    申请日：2010-06-22

    Applicant: Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    Inventor： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    IPC: G11B27/36 ,  G11B5/127

    CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    Abstract: An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

    Abstract translation: 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

    Tri-gated molecular field effect transistor and method of fabricating the same
    46.
    发明申请
    Tri-gated molecular field effect transistor and method of fabricating the same 失效
    三门分子场效应晶体管及其制造方法

    公开(公告)号：US20060102889A1

    公开(公告)日：2006-05-18

    申请号：US11135285

    申请日：2005-05-24

    Applicant: Chan Woo Park ,  Sung Yool Choi ,  Han Young Yu ,  Ung Hwan Pi

    Inventor： Chan Woo Park ,  Sung Yool Choi ,  Han Young Yu ,  Ung Hwan Pi

    IPC: H01L29/06

    CPC classification number: B82Y10/00 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938

    Abstract: Provided is a tri-gated molecular field effect transistor (FET) and a method of fabricating the same. The tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.

    Abstract translation: 提供三门分子场效应晶体管（FET）及其制造方法。 三门分子场效应晶体管包括形成在衬底上的栅电极，在源极区，漏区和沟道区中具有沟槽，以及在沟道区中插入在源极和漏极之间的至少一个分子。 可以使栅极电压对通过沟道的电子的影响最大化，并且可以大大提高源极和漏极之间相对于栅极电压提供的电流的变化增益。 因此，可以获得具有高功能性和可靠性的分子电子电路。

    Magnetic Memory Devices
    48.
    发明申请
    Magnetic Memory Devices 有权
    磁存储器件

    公开(公告)号：US20160093669A1

    公开(公告)日：2016-03-31

    申请号：US14715633

    申请日：2015-05-19

    Applicant: Sung-Chul LEE ,  Kwang-Seok KIM ,  Kee-Won KIM ,  Young-Man JANG ,  Ung-Hwan PI

    Inventor： Sung-Chul LEE ,  Kwang-Seok KIM ,  Kee-Won KIM ,  Young-Man JANG ,  Ung-Hwan PI

    IPC: H01L27/22 ,  H01L43/10

    CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

    Abstract translation: 磁存储器件可以包括衬底，衬底上的电路器件，电连接到电路器件的多个下电极，通常设置在多个下电极上的磁隧道结（MTJ）结构，以及多个上电极 MTJ结构上的电极。 MTJ结构可以包括多个磁性材料图案和将磁性材料图案彼此分开的多个绝缘材料图案。

    MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME
    50.
    发明申请
    MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME 有权
    磁性元件和包括其的存储器件

    公开(公告)号：US20130161769A1

    公开(公告)日：2013-06-27

    申请号：US13591809

    申请日：2012-08-22

    Applicant: Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    Inventor： Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    IPC: H01L29/82 ,  G11B5/39

    CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/08 ,  Y10T428/1121

    Abstract: Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.

    Abstract translation: 磁阻元件和包括它们的存储器件包括具有可变磁化方向的自由层，面向自由层的固定层并且具有固定的磁化方向，以及在被钉扎层的表面上的辅助元件。 辅助元件的宽度小于钉扎层的宽度，并且固定在与被钉扎层的固定磁化方向的方向相同的方向上的磁化方向。

Patent Agency Ranking