公开(公告)号：US10179354B2

公开(公告)日：2019-01-15

申请号：US15162160

申请日：2016-05-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Balasubramanian Ramachandran ,  Masato Ishii ,  Aaron Muir Hunter

IPC: B08B9/46 ,  H01L21/67 ,  C23C16/44 ,  C23C16/52 ,  B08B3/08 ,  B08B3/10 ,  G01N21/94 ,  G01N21/84

Abstract: Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a method of monitoring a process being performed in a process chamber includes: performing a cleaning process in a process chamber to remove material deposited on one or more internal surfaces of the process chamber resultant from processes performed within the process chamber; shining a light on a first internal surface being cleaned; detecting the light reflected off of the first internal surface; and terminating the cleaning process based upon the detected light.

公开(公告)号：US09839976B2

公开(公告)日：2017-12-12

申请号：US14533997

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph Michael Ranish

IPC: B23K26/06 ,  H01L21/268 ,  B23K26/00 ,  B23K26/073 ,  H01L21/324 ,  H01L21/20

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US09285595B2

公开(公告)日：2016-03-15

申请号：US14594890

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC: G02B27/12 ,  G02B27/10 ,  G02B27/14 ,  G02B17/08

CPC classification number: G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

Abstract: Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

公开(公告)号：US20160013046A1

公开(公告)日：2016-01-14

申请号：US14789075

申请日：2015-07-01

Applicant: Applied Materials, Inc.

Inventor： SWAMINATHAN T. SRINIVASAN ,  Aaron Muir Hunter ,  Matthias Bauer ,  Amikam Sade

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/268

CPC classification number: H01L21/02658 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/483 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/67028 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract translation: 本公开的实施例提供了用于在衬底上形成外延层的方法和装置。 将衬底暴露于脉冲激光辐射以清洁，退火和/或激活衬底的表面。 然后将衬底在自限制沉积工艺中暴露于沉积前体。 衬底可以再次暴露于脉冲激光辐射，然后在第二自限制沉积工艺中暴露于第二沉积前体。 可以根据需要重复该过程，以一次形成非常高质量的一个原子层的外延层。

公开(公告)号：US09184085B2

公开(公告)日：2015-11-10

申请号：US14658793

申请日：2015-03-16

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Aaron Muir Hunter

IPC: B23Q3/00 ,  H01L21/687

CPC classification number: H01L21/68757 ,  H01L21/67115 ,  H01L21/68735 ,  Y10S269/909

Abstract: Embodiments of the present invention provide a substrate supporting edge ring for supporting a substrate. In one embodiment, a substrate support ring is provided. The substrate support ring comprises an annular body. The annular body comprises an outer band extending radially inward from an outer annular sidewall; and a substrate supporting region extending inward from an inner portion of the outer band, wherein the annular body comprises a first material that is exposed and at least a portion of the substrate supporting region is covered with a coating comprising a second material that is different than the first material.

Abstract translation: 本发明的实施例提供一种用于支撑基板的基板支撑边缘环。 在一个实施例中，提供了衬底支撑环。 衬底支撑环包括环形体。 环形体包括从外部环形侧壁径向向内延伸的外部带; 以及从所述外带的内部向内延伸的衬底支撑区域，其中所述环形体包括暴露的第一材料，并且所述衬底支撑区域的至少一部分被涂覆物覆盖，所述涂层包括不同于 第一种材料。

公开(公告)号：US09146337B2

公开(公告)日：2015-09-29

申请号：US14137592

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Theodore P. Moffitt ,  Stephen Moffatt

IPC: G02B27/10 ,  G02B3/00 ,  G02B27/48

CPC classification number: G02B3/0037 ,  G02B27/48

Abstract: Embodiments described herein relate to thermal processing of semiconductor substrates. More specifically, embodiments described herein relate to laser thermal processing of semiconductor substrates. In certain embodiments, a uniformizer is provided to spatially and temporally decorrelate a coherent light image.

Abstract translation: 本文所述的实施例涉及半导体衬底的热处理。 更具体地，本文所述的实施例涉及半导体衬底的激光热处理。 在某些实施例中，提供均匀器来空间和时间地去相关联相干光图像。

公开(公告)号：US08993933B2

公开(公告)日：2015-03-31

申请号：US13749550

申请日：2013-01-24

Applicant: Applied Materials, Inc.

Inventor： Oleg Serebryanov ,  Joseph M. Ranish ,  Aaron Muir Hunter

IPC: F27B5/14 ,  F27D11/00 ,  F27B17/00 ,  H01L21/67 ,  H01L21/687 ,  F26B19/00

CPC classification number: H01L21/68764 ,  F27B17/0025 ,  F27D11/00 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68785 ,  H05B3/0047

Abstract: Embodiments of the present invention provide thermal processing chambers including a drive mechanism and a heating assembly disposed on opposite sides of a substrate support assembly. Particularly, the heating assembly is disposed below the substrate support assembly to process a substrate with a device side facing up and the drive mechanism is disposed above the substrate assembly.

Abstract translation: 本发明的实施例提供热处理室，其包括设置在基板支撑组件的相对侧上的驱动机构和加热组件。 特别地，加热组件设置在基板支撑组件下方，以处理基板，其中装置侧朝上并且驱动机构设置在基板组件上方。

公开(公告)号：US08901518B2

公开(公告)日：2014-12-02

申请号：US13787960

申请日：2013-03-07

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Aaron Muir Hunter

IPC: G21K5/04 ,  F25B29/00

CPC classification number: F25B29/00 ,  C23C14/541 ,  C23C16/4411 ,  C23C16/46 ,  H01L21/67115

Abstract: Embodiments of the present invention provide a heating assembly using a heat exchange device to cool a plurality of heating element. The heating assembly includes a plurality of heating elements, a cooling element having one or more cooling channels for receiving cooling fluid therein, and a heat exchange device disposed between the plurality of heating elements and the cooling element. The heat exchange device comprises a hot interface disposed adjacent to and in thermal contact with the plurality of heating elements and a cold interface disposed adjacent to and in thermal contact with the cooling element.

Abstract translation: 本发明的实施例提供一种使用热交换装置来冷却多个加热元件的加热组件。 加热组件包括多个加热元件，具有一个或多个用于接收冷却流体的冷却通道的冷却元件和设置在多个加热元件和冷却元件之间的热交换器件。 所述热交换装置包括邻近所述多个加热元件设置并与所述多个加热元件热接触的热界面以及与所述冷却元件相邻并与其接触的冷界面。

公开(公告)号：US08761587B2

公开(公告)日：2014-06-24

申请号：US13903387

申请日：2013-05-28

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Blake Koelmel ,  Aaron Muir Hunter

IPC: A21B2/00

CPC classification number: H01L22/10 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.

Abstract translation: 本发明的实施例提供了用于在热处理期间减少加热源辐射对温度测量的影响的装置和方法。 在本发明的一个实施例中，将背景辐射能（例如热处理室的能量源）标记在所选择的光谱内，然后通过测量所选光谱内的参考波长的辐射能来确定背景的特性 以及刚好在所选频谱之外的比较波长。