公开(公告)号：US11292079B2

公开(公告)日：2022-04-05

申请号：US16550563

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Jiping Li ,  Aaron Muir Hunter ,  Thomas Haw

IPC: B23K26/00 ,  G01N21/59 ,  G01J5/02 ,  G01J1/04 ,  G01J5/00 ,  G01J5/06 ,  G01J5/08 ,  G01J5/58

Abstract: Apparatus and methods for measuring the temperature of a substrate are disclosed. The apparatus includes a source of temperature-indicating radiation, a detector for the temperature-indicating radiation, and a decorrelator disposed in an optical path between the source of temperature-indicating radiation and the detector for the temperature-indicating radiation. The decorrelator may be a broadband amplifier and/or a mode scrambler. A broadband amplifier may be a broadband laser, Bragg grating, a fiber Bragg grating, a Raman amplifier, a Brillouin amplifier, or combinations thereof. The decorrelator is selected to emit radiation that is transmitted, at least in part, by the substrate being monitored. The source is matched to the decorrelator such that the emission spectrum of the source is within the gain bandwidth of the decorrelator, if the decorrelator is a gain-driven device.

公开(公告)号：US10741428B2

公开(公告)日：2020-08-11

申请号：US15417865

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Aaron Muir Hunter ,  Mehran Behdjat ,  Niraj Merchant ,  Douglas R. McAllister ,  Dongming Iu ,  Kong Lung Chan ,  Lara Hawrylchak

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/455 ,  C23C16/452 ,  C23C16/44 ,  H01J37/32

Abstract: A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.

公开(公告)号：US10128144B2

公开(公告)日：2018-11-13

申请号：US15600336

申请日：2017-05-19

Applicant: Applied Materials, Inc.

Inventor： Mehran Behdjat ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Norman Tam ,  Jeffrey Tobin ,  Jiping Li ,  Martin Tran

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/324

Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.

公开(公告)号：US09927622B2

公开(公告)日：2018-03-27

申请号：US15003996

申请日：2016-01-22

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC: G02B27/12 ,  G02B27/10 ,  G02B27/14 ,  G02B27/00 ,  G02B27/30 ,  G02B17/08

CPC classification number: G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

Abstract: Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

公开(公告)号：US09543172B2

公开(公告)日：2017-01-10

申请号：US14043091

申请日：2013-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Joseph Johnson ,  Joseph M. Ranish ,  John Gerling ,  Mathew Abraham ,  Aaron Muir Hunter ,  Aneesh Nainani

IPC: F26B19/00 ,  F26B3/30 ,  F21V7/00 ,  F24C7/00 ,  H01L21/67

CPC classification number: H01L21/67115 ,  H01L21/67103 ,  H01L21/67109

Abstract: Apparatus for providing heat energy to a process chamber are provided herein. The apparatus may include a process chamber body of the process chamber, a solid state source array having a plurality of solid state sources, disposed on a first substrate, to provide heat energy to the process chamber to heat a target component disposed in the process chamber body, and at least one reflector disposed on the first substrate proximate to one or more of the plurality of solid state sources to direct heat energy provided by the one or more of the plurality of solid state sources towards the target component.

Abstract translation: 本文提供了用于向处理室提供热能的设备。 该装置可以包括处理室的处理室主体，具有多个固态源的固态源阵列，其设置在第一基板上，以向处理室提供热能，以加热设置在处理室中的目标部件 主体和至少一个反射器，其布置在靠近所述多个固态源中的一个或多个固态源的第一基板上，以将由所述多个固态源中的一个或多个的所述固态源提供的热能引导到所述目标部件。

公开(公告)号：US09455143B2

公开(公告)日：2016-09-27

申请号：US14789075

申请日：2015-07-01

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. Srinivasan ,  Aaron Muir Hunter ,  Matthias Bauer ,  Amikam Sade

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/268 ,  H01L21/687

CPC classification number: H01L21/02658 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/483 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/67028 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract translation: 本公开的实施例提供了用于在衬底上形成外延层的方法和装置。 将衬底暴露于脉冲激光辐射以清洁，退火和/或激活衬底的表面。 然后将衬底在自限制沉积工艺中暴露于沉积前体。 衬底可以再次暴露于脉冲激光辐射，然后在第二自限制沉积工艺中暴露于第二沉积前体。 可以根据需要重复该过程，以一次形成非常高质量的一个原子层的外延层。

公开(公告)号：US20150340257A1

公开(公告)日：2015-11-26

申请号：US14645883

申请日：2015-03-12

Applicant: Applied Materials, Inc.

Inventor： PAUL BRILLHART ,  Joseph M. Ranish ,  Aaron Muir Hunter ,  Edric Tong ,  James Francis Mack ,  Kin Pong Lo ,  Errol Antonio C. Sanchez ,  Zhiyuan Ye ,  Anzhong Chang

IPC: H01L21/67 ,  H05B3/00 ,  G02B6/08

Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.

Abstract translation: 本文公开的实施例涉及用于半导体衬底的热处理的光管结构。 在一个实施例中，用于热处理室的光管窗结构包括透明板和形成在透明材料中的多个光管结构，所述多个光管结构联接到透明板，所述多个光管结构中的每一个包括 反射表面并且具有设置在与透明板的平面基本上垂直的方向上的纵向轴线。

公开(公告)号：US09029739B2

公开(公告)日：2015-05-12

申请号：US13904810

申请日：2013-05-29

Applicant: Applied Materials, Inc. ,  Lawrence Livermore National Security, LLC

Inventor： Joseph M. Ranish ,  Aaron Muir Hunter ,  Thomas F. Soules ,  Alexander M. Rubenchik

IPC: H01L21/67 ,  H01L21/268 ,  H05B3/00 ,  H01L21/687

CPC classification number: H05B3/00 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68792 ,  Y10S148/09 ,  Y10S148/093

Abstract: Embodiments of the present invention provide apparatus and methods for performing rapid thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a heating source disposed outside a chamber body and configured to provide thermal energy towards a processing volume. The substrate support defines a substrate supporting plane, and the substrate support is configured to support the substrate in the substrate supporting plane. The heating source includes a frame member having an inner wall surrounding an area large enough to encompass a surface area of the substrate, and a plurality of diode laser tiles mounted on the inner wall of the frame member. Each of the plurality of diode laser tiles is directed towards a corresponding area in the processing volume.

Abstract translation: 本发明的实施例提供了用于执行快速热处理的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该设备包括设置在室主体外部并被配置为朝向处理容积提供热能的加热源。 衬底支撑件限定衬底支撑平面，并且衬底支撑件构造成在衬底支撑平面中支撑衬底。 加热源包括框架构件，该框架构件具有包围足以包围基板的表面区域的区域的内壁和安装在框架构件的内壁上的多个二极管激光瓦片。 多个二极管激光瓦片中的每一个被引导到处理体积中的相应区域。

公开(公告)号：US11942381B2

公开(公告)日：2024-03-26

申请号：US16989543

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Wolfgang R. Aderhold ,  Aaron Muir Hunter ,  Joseph M. Ranish

IPC: H01L21/66 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L22/26 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

公开(公告)号：US10741457B2

公开(公告)日：2020-08-11

申请号：US15637944

申请日：2017-06-29

Applicant: Applied Materials, Inc.

Inventor： Wolfgang R. Aderhold ,  Aaron Muir Hunter ,  Joseph M. Ranish

IPC: H01L21/66 ,  H01L21/324 ,  H01L21/67

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.