公开(公告)号：US10755955B2

公开(公告)日：2020-08-25

申请号：US15894735

申请日：2018-02-12

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Richard O. Collins ,  Richard Giljum ,  Alexander Berger

IPC: H01L21/677 ,  H01L21/687 ,  H01L21/673 ,  H01L21/68 ,  H01L21/67

Abstract: A substrate processing system is disclosed which includes a substrate input/output chamber coupled to a transfer chamber, and one or more processing chambers coupled to the transfer chamber, wherein the substrate input/output chamber includes a plurality of stacked carrier holders, and a platen, wherein the platen includes a plurality of alignment pads and a plurality of openings formed in a recessed flange along a peripheral edge of the platen.

公开(公告)号：US09905454B2

公开(公告)日：2018-02-27

申请号：US14965228

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Jeffrey Tobin

IPC: H01L21/68 ,  H01L21/687 ,  C23C16/458 ,  C30B25/12 ,  H01L21/67 ,  H01L21/677 ,  C30B35/00

CPC classification number: H01L21/68742 ,  C23C16/4582 ,  C23C16/4583 ,  C30B25/12 ,  C30B35/005 ,  H01L21/67115 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68735 ,  H01L21/68764

Abstract: In one embodiment, a substrate support assembly includes a susceptor for supporting a substrate, and a supporting transfer mechanism coupled to the susceptor, the supporting transfer mechanism having a surface for supporting a peripheral edge of the substrate, the supporting transfer mechanism being movable relative to an upper surface of the susceptor.

公开(公告)号：US20200303228A1

公开(公告)日：2020-09-24

申请号：US16899043

申请日：2020-06-11

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Richard O. Collins ,  Richard Giljum ,  Alexander Berger

IPC: H01L21/677 ,  H01L21/687 ,  H01L21/673 ,  H01L21/67 ,  H01L21/68

Abstract: A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.

公开(公告)号：US11965241B2

公开(公告)日：2024-04-23

申请号：US17869529

申请日：2022-07-20

Applicant: Applied Materials, Inc.

Inventor： Saurabh Chopra ,  Martin Jeffrey Salinas ,  Masato Ishii ,  Sheng-Chen Twan ,  Srividya Natarajan

IPC: H01L21/67 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/4405 ,  H01L21/0262 ,  H01L21/67207

Abstract: In one aspect, a process operation is conducted at a first pressure in a process chamber, and an epitaxial deposition operation is conducted at an atmospheric pressure in an epitaxial deposition chamber. The atmospheric pressure is greater than the first pressure. The process chamber is mounted to a first mainframe that operates at the first pressure (a reduced pressure), and the epitaxial deposition chamber is mounted to a second mainframe that operates at the atmospheric chamber. In one aspect, the process chamber is a cleaning chamber (such as a pre-clean chamber) and the process operation is a cleaning operation. In one aspect, the process chamber is an atmospheric pressure epitaxial deposition chamber and the process operation is an atmospheric pressure epitaxial deposition operation.

公开(公告)号：US11784076B2

公开(公告)日：2023-10-10

申请号：US17866152

申请日：2022-07-15

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Richard O. Collins ,  Richard Giljum ,  Alexander Berger

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/673 ,  H01L21/67 ,  H01L21/68

CPC classification number: H01L21/67778 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67346 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/68 ,  H01L21/68707 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757

Abstract: A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.

公开(公告)号：US11424149B2

公开(公告)日：2022-08-23

申请号：US16899043

申请日：2020-06-11

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Richard O. Collins ,  Richard Giljum ,  Alexander Berger

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/673 ,  H01L21/67 ,  H01L21/68

Abstract: A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.

公开(公告)号：US10179354B2

公开(公告)日：2019-01-15

申请号：US15162160

申请日：2016-05-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Balasubramanian Ramachandran ,  Masato Ishii ,  Aaron Muir Hunter

IPC: B08B9/46 ,  H01L21/67 ,  C23C16/44 ,  C23C16/52 ,  B08B3/08 ,  B08B3/10 ,  G01N21/94 ,  G01N21/84

Abstract: Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a method of monitoring a process being performed in a process chamber includes: performing a cleaning process in a process chamber to remove material deposited on one or more internal surfaces of the process chamber resultant from processes performed within the process chamber; shining a light on a first internal surface being cleaned; detecting the light reflected off of the first internal surface; and terminating the cleaning process based upon the detected light.

公开(公告)号：US09532401B2

公开(公告)日：2016-12-27

申请号：US14181035

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

IPC: F27D5/00 ,  C23C14/00 ,  H01L21/302 ,  H05B1/02

CPC classification number: H05B1/0227 ,  H05B2203/032

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。

公开(公告)号：US20140263268A1

公开(公告)日：2014-09-18

申请号：US14181035

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

IPC: H05B3/02

CPC classification number: H05B1/0227 ,  H05B2203/032

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。

公开(公告)号：US10607837B2

公开(公告)日：2020-03-31

申请号：US15682171

申请日：2017-08-21

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii

IPC: C23C16/455 ,  H01L21/205 ,  H01L21/67 ,  H01L21/02 ,  H01L21/268

Abstract: One implementation provides a method including providing a substrate into a processing chamber through a loading port, rotating the substrate clockwise, providing a gas mixture into a processing region through an inject insert comprising a first, second, and third sets of inject inlets, wherein the first set of inject inlets creates an inner zone inside the processing region, the second set of inject inlets creates a middle zone radially outward of the inner zone, and the third set of inject inlets creates an outer zone radially outward the middle zone, the gas mixture is provided by flowing the gas mixture through the first and second sets of inject inlets, and inject inlets of the third set of inject inlets that are away from the loading port, while blocking flow of the gas mixture into inject inlets of the third set of inject inlets that are closer to the loading port.