公开(公告)号：US11577967B2

公开(公告)日：2023-02-14

申请号：US17123445

申请日：2020-12-16

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Feng Li ,  Sonia Plaza ,  Jean-Marc Girard ,  Nicolas Blasco ,  Yumin Liu

IPC分类号： C01G41/04

摘要： A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

公开(公告)号：US11066310B2

公开(公告)日：2021-07-20

申请号：US16897915

申请日：2020-06-10

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Feng Li ,  Sonia Plaza ,  Jean-Marc Girard ,  Nicolas Blasco ,  Yumin Liu

IPC分类号： C01G41/04 ,  C30B35/00 ,  C30B33/02

摘要： Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

公开(公告)号：US10689405B2

公开(公告)日：2020-06-23

申请号：US15968099

申请日：2018-05-01

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Antonio Sanchez ,  Jean-Marc Girard ,  Grigory Nikiforov ,  Nicolas Blasco

IPC分类号： C01G23/02 ,  C07F7/28 ,  C23C16/455 ,  C23C16/14 ,  C23C16/34

摘要： Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

公开(公告)号：US10648087B2

公开(公告)日：2020-05-12

申请号：US15774892

申请日：2016-09-01

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  Clément Lansalot-Matras ,  Jooho Lee ,  Jean-Marc Girard ,  Nicolas Blasco ,  Satoko Gatineau

发明人： Clément Lansalot-Matras ,  Jooho Lee ,  Jean-Marc Girard ,  Nicolas Blasco ,  Satoko Gatineau

IPC分类号： C23F1/12 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  C23C8/80 ,  H01L21/02 ,  B08B9/08

摘要： Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MFx(adduct)n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.

公开(公告)号：US20180162883A1

公开(公告)日：2018-06-14

申请号：US15892839

申请日：2018-02-09

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Antonio Sanchez ,  Jean-Marc Girard ,  Gennadiy Itov ,  Manish Khandelwal ,  Matthew Damien Stephens ,  Peng Zhang

IPC分类号： C07F7/02 ,  C07F7/10 ,  H01L21/02

CPC分类号： C07F7/025 ,  C07F7/10 ,  H01L21/02219 ,  H01L21/02617

摘要： Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via dehydrogenative coupling between the corresponding unsubstituted trisilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si—H and a N—H moiety to form an Si—N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.

公开(公告)号：US09719167B2

公开(公告)日：2017-08-01

申请号：US14986286

申请日：2015-12-31

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Satoko Gatineau ,  Mikiko Kimura ,  Christian Dussarrat ,  Jean-Marc Girard ,  Nicolas Blasco

IPC分类号： H01L21/285 ,  C23C16/18 ,  C23C16/42 ,  H01L21/02 ,  H01L21/768

CPC分类号： C23C16/18 ,  C23C16/34 ,  C23C16/42 ,  C23C16/4481 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02697 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76898

摘要： Methods of depositing Co-containing layers on substrates are disclosed. The vapor of a Co-containing film forming composition is introduced into a reactor having a substrate disposed therein. The Co-containing film forming compositions comprise a silylamide-containing precursor selected from Co[N(SiMe3)2]2(NMe2Et), Co[N(SiMe3)2]2(NMeEt2), or combinations thereof. At least part of the silylamide-containing precursor is deposited onto the substrate to form the Co-containing layer using a vapor deposition method.

公开(公告)号：US10192734B2

公开(公告)日：2019-01-29

申请号：US15661576

申请日：2017-07-27

申请人： Air Liquide Advanced Materials, Inc. ,  L'Air Liquide, Société Anonyme pour l;etude et l'Exploitation des Procédés Georges Claude ,  Air Liquide Advanced Materials LLC

发明人： Antonio Sanchez ,  Gennadiy Itov ,  Reno Pesaresi ,  Jean-Marc Girard ,  Peng Zhang ,  Manish Khandelwal

IPC分类号： H01L21/02 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40

摘要： Si-containing film forming compositions comprising Si—C free and volatile silazane-containing precursors are disclosed. The compositions may be used to deposit high purity thin films. The Si—C free and volatile silazane-containing precursors have the formulae: [(SiR3)2NSiH2]m—NH2-m—C≡N, with m=1 or 2;  (a) [(SiR3)2NSiH2]n—NL3-n,with n=2 or 3;  (b) (SiH3)2NSiH2—O—SiH2N(SiH3)2; and  (c) (SiR′3)2N—SiH2—N(SiR′3)2;  (d) with each R independently selected from H, a dialkylamino group, or an amidinate; each R′ independently selected from H, a dialkylamino group, or an amidinate, with the provision that all R′ are not H; and L is selected from H or a C1-C6 hydrocarbyl group.

公开(公告)号：US20210277517A1

公开(公告)日：2021-09-09

申请号：US17193046

申请日：2021-03-05

申请人： L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin Liu ,  Rocio Arteaga ,  Nicolas Blasco ,  Jean-Marc Girard ,  Feng Li ,  Venkateswara R. Pallem ,  Zhengning Gao

IPC分类号： C23C16/34 ,  H01L21/02 ,  C23C16/06 ,  C23C16/455

摘要： A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

公开(公告)号：US10053775B2

公开(公告)日：2018-08-21

申请号：US14984908

申请日：2015-12-30

申请人： American Air Liquide, Inc. ,  L'Air Liquide, Societé Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Glenn Kuchenbeiser ,  Venkateswara R. Pallem ,  Nicolas Blasco ,  Jean-Marc Girard

IPC分类号： C23C16/24 ,  C23C16/455 ,  C23C16/18

CPC分类号： C23C16/45553 ,  C23C16/18

摘要： Methods of using Si-containing film forming compositions to deposit silicon-containing films using vapor deposition processes are disclosed. The disclosed Si-containing film forming composition comprises an amino(bromo)silane precursor having the formula: SiHxBry(NR1R2)4−x−y wherein x=0, 1 or 2; y=1, 2 or 3; x+y