-
公开(公告)号：US08477528B2
公开(公告)日：2013-07-02
申请号：US12443349
申请日：2007-09-25
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.
摘要翻译： 磁存储单元1设置有磁记录层10，磁记录层10是铁磁层，和通过非磁性层20与磁记录层10连接的钉扎层30.磁记录层10具有磁化反转区域13， 第一磁化固定区域11和第二磁化固定区域12.磁化反转区域13具有其取向可反转并与被钉扎层30重叠的磁化。第一磁化固定区域11与磁化反转中的第一边界B1连接 区域13和磁化取向在第一方向固定。 第二磁化固定区域12与磁化反转区域13中的第二边界B2连接，并且磁化取向固定在第二方向上。 第一方向和第二方向彼此相反。
-
公开(公告)号：US20120275000A1
公开(公告)日：2012-11-01
申请号：US13509958
申请日：2010-10-28
申请人： Takeshi Honda
发明人： Takeshi Honda
IPC分类号： G02B26/10
CPC分类号： G02B26/105 , B81B3/0072 , B81B2201/042 , G02B26/0841 , H02N2/10
摘要： An optical scanning device of the present invention includes: an oscillating mirror that reflects incident light; a first beam unit that is coupled to one end of the oscillating mirror; a second beam unit that is coupled to another end of the oscillating mirror; a first driving unit that is coupled to the first beam unit, is disposed between the first beam unit and the first adjusting unit, and that causes the oscillating mirror to oscillate; and a first adjusting unit that is coupled to the first driving unit, and adjusts a modulus of elasticity of the first beam unit by elastically deforming the first beam unit.
摘要翻译： 本发明的光学扫描装置包括：反射入射光的振荡镜; 耦合到所述振荡反射镜的一端的第一光束单元; 耦合到所述振荡反射镜的另一端的第二光束单元; 耦合到第一光束单元的第一驱动单元设置在第一光束单元和第一调节单元之间，并且使振荡镜振荡; 以及耦合到第一驱动单元的第一调整单元，并且通过使第一梁单元弹性变形来调节第一梁单元的弹性模量。
-
公开(公告)号：US20120129891A1
公开(公告)日：2012-05-24
申请号：US13388218
申请日：2010-08-04
申请人： Shigeo Yamanoi , Hidenori Namiki , Takahiro Katagiri , Mayuko Akiu , Katsuji Kagechika , Takeshi Honda , Koji Matsumoto , Ryutaro Nakashima
发明人： Shigeo Yamanoi , Hidenori Namiki , Takahiro Katagiri , Mayuko Akiu , Katsuji Kagechika , Takeshi Honda , Koji Matsumoto , Ryutaro Nakashima
IPC分类号： A61K31/4439 , A61K31/4245 , A61P1/18 , A61P3/10 , A61P3/04 , C07D413/12 , C07D413/14
CPC分类号： C07D271/06 , A61K31/4245 , A61K31/4439 , C07D413/12 , C07D413/14
摘要： Provided are a compound having an excellent hypoglycemic action, or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition having an excellent therapeutic effect and/or prophylactic effect on type 1 diabetes, type 2 diabetes, and the like, which cause an increase in the blood sugar level due to abnormal sugar metabolism. A compound represented by general formula (I), or a pharmaceutically acceptable salt thereof, is disclosed.
摘要翻译： 提供具有优异的降血糖作用的化合物或其药学上可接受的盐，以及对1型糖尿病，2型糖尿病等具有优异的治疗效果和/或预防效果的药物组合物，其引起增加 血糖水平由于糖代谢异常。 公开了由通式（I）表示的化合物或其药学上可接受的盐。
-
公开(公告)号：US07916520B2
公开(公告)日：2011-03-29
申请号：US11574121
申请日：2005-08-19
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/15 , H01L43/08 , Y10S977/935
摘要： A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.
摘要翻译： 使用包括多个磁阻元件和多个叠层铁磁结构物质的存储单元。 多个磁阻元件对应于在第一方向上延伸的多个第一布线与基本上垂直于第一方向的第二方向延伸的多个第二布线相对应的相应位置放置。 多个叠层铁氧体结构物质分别对应于多个磁阻元件，放置成距离相应的多个磁阻元件具有预定范围的距离，并具有叠层铁磁结构。 磁阻元件包括层叠的铁磁结构，固定层和插入在自由层和固定层之间的非磁性层的自由层。
-
45.发明授权Resistance change semiconductor memory device and method of reading data with a first and second switch circuit 有权电阻变化半导体存储器件以及利用第一和第二开关电路读取数据的方法公开(公告)号：US07885131B2
公开(公告)日：2011-02-08
申请号：US11815325
申请日：2006-02-01
IPC分类号： G11C7/02
CPC分类号： G11C11/16 , G11C7/02 , G11C7/062 , G11C7/14 , G11C11/4091 , G11C11/4099 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A semiconductor memory device of the present invention comprises a memory array and a read circuit that reads data of a selected cell. The memory array includes a plurality of memory cells and a reference cell each having a memory element that stores data based on change in resistance value. The read circuit includes: a voltage comparison unit that compares a value corresponding to a sense current from the selected cell with a value corresponding to a reference current from the reference cell; a first switch; and a second switch. Both of the first and second switches are provided at a subsequent stage of a decoder and at a preceding stage of the voltage comparison unit. The second switch circuit controls input of the value corresponding to the sense current to the voltage comparison unit, while the first switch circuit controls input of the value corresponding to the reference current to the voltage comparison unit.
摘要翻译： 本发明的半导体存储器件包括存储器阵列和读取所选择的单元的数据的读取电路。 存储器阵列包括多个存储器单元和参考单元，每个存储器单元具有存储元件，该存储元件基于电阻值的变化存储数据。 读取电路包括：电压比较单元，将来自所选择的单元的检测电流的值与来自参考单元的参考电流对应的值进行比较; 第一个开关 和第二开关。 第一和第二开关都被提供在解码器的后续阶段，并且在电压比较单元的前一级提供。 第二开关电路将对应于感测电流的值的输入控制到电压比较单元，而第一开关电路将对应于参考电流的值的输入控制到电压比较单元。
-
公开(公告)号：US07885095B2
公开(公告)日：2011-02-08
申请号：US12303821
申请日：2007-06-01
CPC分类号： G11C11/1673 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A magnetic random access memory of the present invention includes: a plurality of first wirings and a plurality of second wirings extending in a first direction; a plurality of third wirings and a plurality of fourth wirings extending in a second direction; and a plurality of memory cells provided at intersections of the plurality of first wirings and the plurality of third wirings, respectively. Each of the plurality of memory cells includes: a first transistor and a second transistor connected in series between one of the plurality of first wirings and one of the plurality of second wirings and controlled in response to a signal on one of the plurality of third wirings, a first magnetic resistance element having one end connected to a write wiring through which the first transistor and the second transistor are connected, and the other end grounded; and a second magnetic resistance element having one end connected to the write wiring, and the other end connected to the fourth wiring.
摘要翻译： 本发明的磁性随机存取存储器包括：沿第一方向延伸的多个第一布线和多条第二布线; 多个第三布线和沿第二方向延伸的多个第四布线; 以及多个存储单元，分别设置在所述多个第一布线和所述多个第三布线的交点处。 所述多个存储单元中的每一个包括：第一晶体管和第二晶体管，其串联连接在所述多个第一布线中的一个与所述多个第二布线中的一个之间，并响应于所述多个第三布线之一上的信号而被控制 第一磁阻元件，其一端连接到第一晶体管和第二晶体管连接的写入布线，另一端接地; 以及第二磁阻元件，其一端连接到写入布线，另一端连接到第四布线。
-
公开(公告)号：US07764552B2
公开(公告)日：2010-07-27
申请号：US12085158
申请日：2006-11-07
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C11/1675 , G11C11/1693 , G11C11/1697 , Y10T307/826
摘要： A semiconductor integrated circuit is provided that can prevent an internal voltage from the voltage generating circuit from varying during a long term. The semiconductor integrated circuit of the present invention includes a voltage generating circuit configured to generate a reference voltage; a function circuit configured to operate by using the reference voltage; a first capacitance connected to a first node between the voltage generating circuit and the function circuit; and a switch provided between the voltage generating circuit and the first node. The switch is in a turned-off state at least for a period during which the function circuit is in an activated state.
摘要翻译： 提供一种可以防止来自电压产生电路的内部电压在长期内变化的半导体集成电路。 本发明的半导体集成电路包括：电压产生电路，被配置为产生参考电压; 功能电路，被配置为通过使用所述参考电压进行操作; 连接到所述电压产生电路和所述功能电路之间的第一节点的第一电容; 以及设置在电压产生电路和第一节点之间的开关。 至少在功能电路处于激活状态的期间，开关处于截止状态。
-
公开(公告)号：US20100046284A1
公开(公告)日：2010-02-25
申请号：US12515898
申请日：2007-11-12
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： An MRAM comprises: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application section. The magnetic field application section applies an offset adjustment magnetic field in a certain direction to the plurality of magnetic memory cells from outside the plurality of magnetic memory cells. Respective data stored in the plurality of magnetic memory cells become the same when the offset adjustment magnetic field is removed.
摘要翻译： MRAM包括：多个具有磁阻元件的磁存储单元; 和磁场施加部。 磁场施加部从多个磁存储单元的外部向多个磁存储单元施加一定方向的偏移调整磁场。 当去除偏移调整磁场时，存储在多个磁存储单元中的各个数据变得相同。
-
49.发明申请Magnetic random access memory and operating method of magnetic random access memory 有权磁随机存取存储器和磁随机存取存储器的操作方法公开(公告)号：US20090262571A1
公开(公告)日：2009-10-22
申请号：US12308062
申请日：2007-06-01
IPC分类号： G11C11/00 , G11C11/14 , G11C11/416
CPC分类号： G11C11/1659 , G11C11/1655 , G11C11/1675
摘要： A magnetic random access memory includes: a first and second wirings, a plurality of third wirings, a plurality of memory cells and a terminating unit. The first and second wirings extend in a Y direction. The plurality of third wirings extends in an X direction. The memory cell is provided correspondingly to an intersection between the first and second wirings and the third wiring. The terminating unit is provided between the plurality of memory cells and connected to the first and second wirings. The memory cell includes transistors and a magnetoresistive element. The transistors are connected in series between the first and second wirings and controlled based on a signal of the third wiring. The magnetoresistive element is connected to a wiring through which the transistors are connected. At a time of a writing operation, when the write current Iw is supplied from one of the first and second wiring to the other through the transistors, the terminating unit grounds the other.
摘要翻译： 磁性随机存取存储器包括：第一和第二布线，多个第三布线，多个存储单元和终端单元。 第一和第二布线沿Y方向延伸。 多个第三配线沿X方向延伸。 对应于第一和第二布线和第三布线之间的交叉点设置存储单元。 终端单元设置在多个存储单元之间并连接到第一和第二布线。 存储单元包括晶体管和磁阻元件。 晶体管串联连接在第一和第二布线之间，并根据第三布线的信号进行控制。 磁阻元件连接到晶体管连接到的布线。 在写入操作时，当写入电流Iw通过晶体管从第一和第二布线中的一个提供给另一个时，端接单元接地。
-
公开(公告)号：US20070259322A1
公开(公告)日：2007-11-08
申请号：US11787415
申请日：2007-04-16
申请人： Hisashi Yuasa , Takeshi Honda , Kohsuke Nozaki , Kazushi Kimura
发明人： Hisashi Yuasa , Takeshi Honda , Kohsuke Nozaki , Kazushi Kimura
IPC分类号： A62B7/08
CPC分类号： A62B27/00
摘要： A breathing simulator for use in an evaluation test of respirators is provided, the breathing simulator being able to simulate larger respirations, undergoing a change neither in cycle nor in the amount of ventilation even in a test of respirators having a high pressure drop, able to easily generate not only such regular waveforms as a sine wave, a rectangular wave and a triangular wave but also respiration waveforms of workers and arbitrarily created waveforms as air waveforms, being reduced in size and power consumption, and easy to maintenance. The breathing simulator comprises plural air cylinders (1) for generating an air waveform, a single electric cylinder (2) for actuating the air cylinders, a servo controller (3) for controlling the operation of the electric cylinder, an input/output unit (4) for recording an analog input from the exterior and reproducing the recorded data at an arbitrary magnification, a PC (5) for creating an arbitrary waveform, and a waveform generator 6 for outputting the created waveform.
摘要翻译： 提供了一种用于呼吸器评估测试的呼吸模拟器，呼吸模拟器能够模拟较大的呼吸，即使在具有高压降的呼吸器的测试中也不经历循环或通气量的变化，能够 容易产生像正弦波，矩形波和三角波这样的规则波形，也可以生成工作人员和任意创建的波形作为空气波形的呼吸波形，尺寸和功耗降低，易于维护。 呼吸模拟器包括用于产生空气波形的多个气缸（1），用于致动气缸的单个电动缸（2），用于控制电动缸的操作的伺服控制器（3），输入/输出单元 4）用于从外部记录模拟输入并以任意的倍率再现记录的数据，用于创建任意波形的PC（5）和用于输出创建的波形的波形发生器6。
-
-
-
-
-
-
-
-
-
搜索结果
103 条记录 (耗时 0.05 秒)
