公开(公告)号：US07916520B2

公开(公告)日：2011-03-29

申请号：US11574121

申请日：2005-08-19

申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Tetsuhiro Suzuki

发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Tetsuhiro Suzuki

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/15 ,  H01L43/08 ,  Y10S977/935

摘要： A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.

摘要翻译： 使用包括多个磁阻元件和多个叠层铁磁结构物质的存储单元。 多个磁阻元件对应于在第一方向上延伸的多个第一布线与基本上垂直于第一方向的第二方向延伸的多个第二布线相对应的相应位置放置。 多个叠层铁氧体结构物质分别对应于多个磁阻元件，放置成距离相应的多个磁阻元件具有预定范围的距离，并具有叠层铁磁结构。 磁阻元件包括层叠的铁磁结构，固定层和插入在自由层和固定层之间的非磁性层的自由层。

公开(公告)号：US20080089117A1

公开(公告)日：2008-04-17

申请号：US11574121

申请日：2005-08-19

申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Tetsuhiro Suzuki

发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Tetsuhiro Suzuki

IPC分类号： G11C11/00 ,  G11C11/02 ,  G11C11/14

CPC分类号： H01L27/228 ,  G11C11/15 ,  H01L43/08 ,  Y10S977/935

摘要： A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.

摘要翻译： 使用包括多个磁阻元件和多个叠层铁磁结构物质的存储单元。 多个磁阻元件对应于在第一方向上延伸的多个第一布线与基本上垂直于第一方向的第二方向延伸的多个第二布线相对应的相应位置放置。 多个叠层铁氧体结构物质分别对应于多个磁阻元件，放置成距离相应的多个磁阻元件具有预定范围的距离，并具有叠层铁磁结构。 磁阻元件包括层叠的铁磁结构，固定层和插入在自由层和固定层之间的非磁性层的自由层。

公开(公告)号：US08503222B2

公开(公告)日：2013-08-06

申请号：US13144480

申请日：2010-01-21

申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Noboru Sakimura ,  Ryusuke Nebashi

发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Noboru Sakimura ,  Ryusuke Nebashi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/5607 ,  H01L43/08 ,  H03K19/1776 ,  H03K19/1778 ,  H03K19/18 ,  H03K19/20

摘要： A non-volatile logic circuit includes an input section, a control section and an output section. The input section has perpendicular magnetic anisotropy and has a ferromagnetic layer whose magnetization state is changeable. The control section includes a ferromagnetic layer. The output section is provided in a neighborhood of the input section and the control section and includes a magnetic tunnel junction element whose magnetization state is changeable. The magnetization state of the input section is changed based on the magnetization state. A magnetization state of the magnetic tunnel junction element of the output section which state is changed based on the magnetization state of the ferromagnetic material of the control section and the magnetization state of the ferromagnetic material of the input section.

摘要翻译： 非易失性逻辑电路包括输入部分，控制部分和输出部分。 输入部具有垂直的磁各向异性，并具有磁化状态可变的铁磁层。 控制部分包括铁磁层。 输出部分设置在输入部分和控制部分的附近，并且包括磁化状态可变的磁性隧道结元件。 基于磁化状态改变输入部的磁化状态。 输出部分的磁性隧道结元件的磁化状态基于控制部分的铁磁材料的磁化状态和输入部分的铁磁材料的磁化状态而改变。

公开(公告)号：US07817462B2

公开(公告)日：2010-10-19

申请号：US11887631

申请日：2006-03-23

申请人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Tetsuhiro Suzuki

发明人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Tetsuhiro Suzuki

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.

摘要翻译： MRAM包括第一布线，第二布线和存储单元。 第一布线延伸到第一方向，第二布线延伸到第二方向。 存储单元包括自由磁性层，其中层叠有反铁磁性地通过非磁性层耦合的多个磁性层，并且设置在第一和第二布线的交叉点。 自由磁性层的磁化方向与第一和第二方向不同。 写入方法包括（a）读取存储在存储单元中的第一数据; （b）将待写入的第二数据与所述第一数据进行比较; 以及（c）当第一数据和第二数据不同时，改变提供给第一布线的第一写入电流的方向和要提供给第二布线的第二写入电流的方向。

公开(公告)号：US20090141540A1

公开(公告)日：2009-06-04

申请号：US11887631

申请日：2006-03-23

申请人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Tetsuhiro Suzuki

发明人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Tetsuhiro Suzuki

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/416

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.

摘要翻译： MRAM包括第一布线，第二布线和存储单元。 第一布线延伸到第一方向，第二布线延伸到第二方向。 存储单元包括自由磁性层，其中层叠有反铁磁性地通过非磁性层耦合的多个磁性层，并且设置在第一和第二布线的交叉点。 自由磁性层的磁化方向与第一和第二方向不同。 写入方法包括（a）读取存储在存储单元中的第一数据; （b）将待写入的第二数据与所述第一数据进行比较; 以及（c）当第一数据和第二数据不同时，改变提供给第一布线的第一写入电流的方向和要提供给第二布线的第二写入电流的方向。

公开(公告)号：US20110292718A1

公开(公告)日：2011-12-01

申请号：US13144480

申请日：2010-01-21

申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Noburu Sakimura ,  Ryusuke Nebashi

发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Noburu Sakimura ,  Ryusuke Nebashi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/5607 ,  H01L43/08 ,  H03K19/1776 ,  H03K19/1778 ,  H03K19/18 ,  H03K19/20

摘要： A non-volatile logic circuit includes an input section, a control section and an output section. The input section has perpendicular magnetic anisotropy and has a ferromagnetic layer whose magnetization state is changeable. The control section includes a ferromagnetic layer. The output section is provided in a neighborhood of the input section and the control section and includes a magnetic tunnel junction element whose magnetization state is changeable. The magnetization state of the input section is changed based on the magnetization state. A magnetization state of the magnetic tunnel junction element of the output section which state is changed based on the magnetization state of the ferromagnetic material of the control section and the magnetization state of the ferromagnetic material of the input section.

摘要翻译： 非易失性逻辑电路包括输入部分，控制部分和输出部分。 输入部具有垂直的磁各向异性，并具有磁化状态可变的铁磁层。 控制部分包括铁磁层。 输出部分设置在输入部分和控制部分的附近，并且包括磁化状态可变的磁性隧道结元件。 基于磁化状态改变输入部的磁化状态。 输出部分的磁性隧道结元件的磁化状态基于控制部分的铁磁材料的磁化状态和输入部分的铁磁材料的磁化状态而改变。

公开(公告)号：US09379312B2

公开(公告)日：2016-06-28

申请号：US13518974

申请日：2010-12-14

申请人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

发明人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

IPC分类号： H01L29/82 ,  H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08 ,  H01L27/22

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

摘要翻译： 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。

公开(公告)号：US20130175645A1

公开(公告)日：2013-07-11

申请号：US13518974

申请日：2010-12-14

申请人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

发明人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

IPC分类号： H01L43/02

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

摘要翻译： 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。

公开(公告)号：US07929342B2

公开(公告)日：2011-04-19

申请号：US11996711

申请日：2006-08-04

申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

公开(公告)号：US20100142264A1

公开(公告)日：2010-06-10

申请号：US11996711

申请日：2006-08-04

申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

IPC分类号： G11C11/14 ,  H01L29/82 ,  G11C7/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。