公开(公告)号：US20200131635A1

公开(公告)日：2020-04-30

申请号：US16658393

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

公开(公告)号：US20200066572A1

公开(公告)日：2020-02-27

申请号：US16664406

申请日：2019-10-25

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

公开(公告)号：US10570517B2

公开(公告)日：2020-02-25

申请号：US15184675

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Amit Bansal ,  Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Thomas Nowak

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/02 ,  C23C16/455 ,  C23C16/54 ,  C23C16/48

Abstract: Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

公开(公告)号：US20190385819A1

公开(公告)日：2019-12-19

申请号：US16444549

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Tsutomu Tanaka ,  Mandyam Sriram ,  Dmitry A. Dzilno ,  Sanjeev Baluja ,  Mario D. Silvetti

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/46

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.

公开(公告)号：US20190332129A1

公开(公告)日：2019-10-31

申请号：US16396684

申请日：2019-04-27

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Ashley M. Okada ,  Alexander Fernandez ,  Ming Xu ,  Marcel E. Josephson ,  Sushant Suresh Koshti ,  Kenneth Le ,  Kevin M. Brashear

IPC: G05D7/06

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

公开(公告)号：US10312076B2

公开(公告)日：2019-06-04

申请号：US15917079

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Sanjeev Baluja ,  Mayur G. Kulkarni

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40 ,  C23C16/458 ,  C23C16/50

Abstract: Apparatus and methods for depositing a film in a PECVD chamber while simultaneously flowing a purge gas from beneath a substrate support are provided herein. In embodiments disclosed herein, a combined gas exhaust volume circumferentially disposed about the substrate support, below a first volume and above a second volume, draws processing gases from the first volume down over an edge of a first surface of the substrate support and simultaneously draws purge gases from the second volume upward over an edge of a second surface of the substrate support. The gases are than evacuated from the combined exhaust volume through an exhaust port fluidly coupled to a vacuum source.

公开(公告)号：US10199388B2

公开(公告)日：2019-02-05

申请号：US15214104

申请日：2016-07-19

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Praket P. Jha ,  Xinhai Han ,  Bok Hoen Kim ,  Sang Hyuk Kim ,  Myung Hun Ju ,  Hyung Jin Park ,  Ryeun Kwan Kim ,  Jin Chul Son ,  Saiprasanna Gnanavelu ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Majid K. Shahreza ,  Jason K. Foster

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/3115 ,  H01L29/06 ,  H01L21/768 ,  H01L27/11548 ,  H01L27/11575 ,  H01L21/3105 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.

公开(公告)号：US10113231B2

公开(公告)日：2018-10-30

申请号：US15138209

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Dale R. Dubois ,  Kalyanjit Ghosh ,  Kien N. Chuc ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Yanjie Wang ,  Sungjin Kim

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.

公开(公告)号：US10017855B2

公开(公告)日：2018-07-10

申请号：US14975133

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: H01L21/00 ,  C23C16/44 ,  H01J37/32

CPC classification number: C23C16/4412 ,  C23C16/4401 ,  H01J37/32477

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US12183618B2

公开(公告)日：2024-12-31

申请号：US17061015

申请日：2020-10-01

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Tejas Ulavi ,  Eric J. Hoffmann ,  Ashutosh Agarwal

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.