公开(公告)号：US20180096847A1

公开(公告)日：2018-04-05

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/32133 ,  H01L21/32139

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20240332028A1

公开(公告)日：2024-10-03

申请号：US18192549

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/3105 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31051 ,  H01J37/32816 ,  H01L21/02164 ,  H01L21/02271 ,  H01J2237/336

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. The methods may include forming a silicon-containing material on the substrate. The silicon-containing material may be characterized by a stress of greater than or about −200 MPa. The methods may include annealing the substrate at a temperature of greater than or about 700° C.

公开(公告)号：US20240234127A1

公开(公告)日：2024-07-11

申请号：US18615539

申请日：2024-03-25

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/02118 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US11990369B2

公开(公告)日：2024-05-21

申请号：US17407504

申请日：2021-08-20

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  B05D1/00

CPC classification number: H01L21/76877 ,  H01L21/02118 ,  H01L21/31133 ,  H01L21/76834 ,  H01L21/76837 ,  B05D1/60 ,  B05D1/62

Abstract: Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.

公开(公告)号：US20240055255A1

公开(公告)日：2024-02-15

申请号：US17880797

申请日：2022-08-04

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Xinke Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: H01L21/033 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02211

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.

公开(公告)号：US20230386839A2

公开(公告)日：2023-11-30

申请号：US18082872

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

CPC classification number: H01L21/0332 ,  H01L21/02172 ,  H01L21/0234 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02271

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20230360906A1

公开(公告)日：2023-11-09

申请号：US17737328

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02211 ,  H01L21/02532 ,  H01L21/02123 ,  H01L21/0234 ,  H01L21/31111 ,  H01L29/42392

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the oxygen-containing precursor at a temperature less than or about 700° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.

公开(公告)号：US11781218B2

公开(公告)日：2023-10-10

申请号：US17119648

申请日：2020-12-11

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/40 ,  H01L21/768 ,  H01L21/311 ,  C23C16/56 ,  C23C16/455 ,  H01L21/762 ,  H01L21/02

CPC classification number: C23C16/407 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/76837

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material.

公开(公告)号：US11756785B2

公开(公告)日：2023-09-12

申请号：US17407553

申请日：2021-08-20

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02115 ,  H01L21/31111

Abstract: Exemplary methods of semiconductor processing may include etching one or more features partially through a dielectric material to expose material from one or more layer pairs formed on a substrate. The methods may include halting the etching prior to penetrating fully through the dielectric material, and prior to exposing material from all layer pairs formed on the substrate. The methods may include forming a layer of carbon-containing material on the exposed material from each of the one or more layer pairs having exposed material. The methods may include etching the one or more features fully through the dielectric material to expose material for each remaining layer pair formed on the substrate.

公开(公告)号：US20230127535A1

公开(公告)日：2023-04-27

申请号：US18082872

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Gemanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.