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公开(公告)号：US20210124897A1
公开(公告)日：2021-04-29
申请号：US17256678
申请日：2020-05-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Qingzhao Liu , Ke Wang , Guoqiang Wang , Shuilang Dong
Abstract: An array substrate and a method for manufacturing the same, a method and assembly for detecting light, and a display device are provided. The array substrate includes: a base substrate having a pixel region; a light detecting unit, a switch unit, and a light emitting unit that are located in the pixel region, where the light emitting unit and the light detecting unit share the switch unit.
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公开(公告)号：US20210124215A1
公开(公告)日：2021-04-29
申请号：US16918080
申请日：2020-07-01
Applicant: BOE Technology Group Co., Ltd.
Inventor： Shengguang Ban , Zhanfeng Cao , Ke Wang , Qingzhao Liu , Shuilang Dong , Song Liu
IPC: G02F1/13357 , H01L27/15 , H01L33/26
Abstract: The present disclosure provides a backlight source. The backlight source includes: a substrate, and a first conductive structure, a plurality of light emitting units, and a second conductive structure which are stacked on the substrate. The first conductive structure and the second conductive structure are respectively on two sides of the plurality of light emitting units in a direction perpendicular to the substrate, and the first conductive structure and the second conductive structure are configured to load a voltage for the plurality of light emitting units.
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43.发明授权公开(公告)号：US10553621B2
公开(公告)日：2020-02-04
申请号：US16302850
申请日：2018-03-13
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hehe Hu , Wei Yang , Xinhong Lu , Ke Wang , Yu Wen
IPC: H01L27/12 , H01L29/66 , H01L29/786 , H01L27/32
Abstract: Embodiment of the present disclosure provide a thin-film transistor structure, a manufacturing method thereof, a display panel and a display device. The thin-film transistor structure includes: a base substrate; and a first thin-film transistor and a second thin-film transistor formed on the base substrate, wherein a first active layer of the first thin-film transistor is doped with hydrogen; a material of a second active layer of the second thin-film transistor is metal oxide; and a first isolation barrier surrounding the first thin-film transistor and/or a second isolation barrier surrounding the second thin-film transistor are disposed on the base substrate.
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44.发明授权公开(公告)号：US09373649B2
公开(公告)日：2016-06-21
申请号：US14422342
申请日：2014-06-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L29/10 , H01L27/12 , G02F1/1343
CPC classification number: H01L27/1248 , G02F2001/134372 , H01L27/1259 , H01L27/1288
Abstract: The invention belongs to the field of display technology, and particularly provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and a thin film transistor and driving electrodes provided on the base substrate, the thin film transistor includes a gate, a gate insulating layer, an active layer, a source and a drain, the driving electrodes include a slit-shaped electrode and a plate-shaped electrode which are located in different layers and at least partially overlap with each other in the orthographic projection direction, the source, the drain and the active layer are formed so that part of their bottom surfaces are located in the same plane, and a resin layer is further provided between the thin film transistor and the plate-shaped electrode.
Abstract translation: 本发明属于显示技术领域，特别是提供阵列基板及其制造方法以及显示装置。 阵列基板包括基底基板和设置在基底基板上的薄膜晶体管和驱动电极，薄膜晶体管包括栅极，栅极绝缘层，有源层，源极和漏极，驱动电极包括 狭缝状电极和板状电极，其位于不同的层中并且在正投影方向上彼此至少部分重叠，源极，漏极和有源层形成为使得它们的底表面的一部分位于 在同一平面内，在薄膜晶体管和板状电极之间进一步设置树脂层。
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公开(公告)号：US12249529B2
公开(公告)日：2025-03-11
申请号：US17427628
申请日：2020-10-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Haixu Li , Xiao Zhang , Fei Wang , Mingxing Wang , Shulei Li , Xue Dong , Guangcai Yuan , Zhanfeng Cao , Xin Gu , Ke Wang , Feng Qu , Xuan Liang , Junwei Yan
IPC: H01L21/683 , H01L25/075 , H01L33/62
Abstract: A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.
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Patent Agency Ranking
公开(公告)号：US20240332460A1
公开(公告)日：2024-10-03
申请号：US18246452
申请日：2022-06-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiaxiang Zhang , Ke Wang , Zhanfeng Cao
IPC: H01L33/44 , H01L25/075 , H01L33/38 , H01L33/62
CPC classification number: H01L33/44 , H01L25/0753 , H01L33/382 , H01L33/62 , H01L2933/0025
Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided. The display substrate includes: a base substrate; a metal layer on the base substrate, including a copper layer having a first thickness; an anti-oxidation layer on a side of the metal layer away from the base substrate, having a second thickness; and a light emitting diode on a side of the anti-oxidation layer away from the base substrate, including at least one electrode electrically connected to the metal layer, where the first thickness of the metal layer is larger than the second thickness of the anti-oxidation layer.
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公开(公告)号：US12087892B2
公开(公告)日：2024-09-10
申请号：US17043937
申请日：2019-10-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhiwei Liang , Wenqian Luo , Zhijun Lv , Yingwei Liu , Ke Wang , Zhanfeng Cao
CPC classification number: H01L33/62 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/05655 , H01L2224/0568 , H01L2224/1145 , H01L2224/11622 , H01L2224/13011 , H01L2224/13014 , H01L2224/13016 , H01L2224/13124 , H01L2224/16057 , H01L2224/1607 , H01L2224/16238 , H01L2224/81193 , H01L2224/81201 , H01L2224/81345 , H01L2224/81898
Abstract: The present disclosure provides a supporting substrate, including: a base substrate and a plurality of connecting electrodes provided on the base substrate, wherein a clamping electrode is provided on a side of at least one of the connecting electrodes facing away the base substrate, the clamping electrode is electrically connected with a corresponding connecting electrode and configured to be capable of clamping and fixing an electrode pin of the micro-light emitting device. The present disclosure also provides a manufacturing method for the supporting substrate, and a backplane.
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公开(公告)号：US12062744B2
公开(公告)日：2024-08-13
申请号：US16975771
申请日：2019-10-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Muxin Di , Ke Wang , Guoqiang Wang , Zhiwei Liang , Renquan Gu , Yingwei Liu , Qi Yao , Zhanfeng Cao
CPC classification number: H01L33/62 , H01L33/005 , H01L33/387 , H01L2933/0016 , H01L2933/0066
Abstract: The present disclosure relates to a display substrate, a display device, and a method for manufacturing a display substrate. The display substrate includes a base substrate having a first side and a second side opposite to the first side, a via provided in the base substrate, a thin film transistor provided on the first side of the base substrate, a first conductive structure provided on the first side of the base substrate, wherein a first sub-portion of the first conductive structure is located in the via, and wherein a material of the first conductive structure is the same as a material of a source/drain electrode of the thin film transistor.
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公开(公告)号：US12021173B2
公开(公告)日：2024-06-25
申请号：US17435016
申请日：2020-11-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Mingxing Wang , Binbin Tong , Lizhen Zhang , Chenyang Zhang , Zhen Zhang , Xiawei Yun , Guangcai Yuan , Xue Dong , Muxin Di , Zhiwei Liang , Ke Wang , Zhanfeng Cao
IPC: H01L33/38 , H01L25/075 , H01L33/00 , H01L33/46 , H01L33/62
CPC classification number: H01L33/382 , H01L25/0753 , H01L33/005 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.
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50.发明授权公开(公告)号：US11973166B2
公开(公告)日：2024-04-30
申请号：US17340672
申请日：2021-06-07
Applicant: BOE Technology Group Co., Ltd.
Inventor： Lubin Shi , Bin Qin , Liang Chen , Dongni Liu , Fangzhen Zhang , Ke Wang
IPC: H01L33/48 , H01L25/075
CPC classification number: H01L33/486 , H01L25/0753 , H01L2933/0016 , H01L2933/0066
Abstract: A displaying base plate and a fabricating method thereof. The displaying base plate includes a substrate, and a first flat layer on one side of the substrate; a first metal layer on one side of the first flat layer that is further away from the substrate; a second flat layer on sides of the first metal layer and the first flat layer that are further away from the substrate; and a second metal layer on one side of the second flat layer that is further away from the substrate; wherein the first metal layer includes a first metal trace, an orthographic projection of the second metal layer on the substrate and an orthographic projection of the first metal trace on the substrate have an overlapping part, and an orthographic projection of the second flat layer on the substrate covers the orthographic projection of the first metal trace on the substrate.
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