Manufacturing method of an amorphous-silicon flat-panel X-ray sensor

    公开(公告)号:US09773938B2

    公开(公告)日:2017-09-26

    申请号:US13995424

    申请日:2012-10-29

    Abstract: An embodiment of the present invention provides a manufacturing method of an amorphous-silicon flat-panel X-ray sensor; the method reduces the number of mask plates to be used, simplifies the production processes, saves production costs, while also improving the product yield. The manufacturing method comprises: on a substrate, after a gate scan line is formed, forming a data line, a TFT switch element and a photosensitive element through one patterning process, wherein on the mask plate used in the patterning process, a region corresponding to a channel of the TFT switch element is semi-transmissive, whereas regions respectively corresponding to the data line, the photosensitive element and the portion of the TFT switch element other than the channel thereof are non-transmissive; thereafter, on the substrate formed with the TFT switch element and the photosensitive element, a passivation layer and a bias line are formed.

    Sensor and method for fabricating the same
    50.
    发明授权
    Sensor and method for fabricating the same 有权
    传感器及其制造方法

    公开(公告)号:US09312290B2

    公开(公告)日:2016-04-12

    申请号:US14128263

    申请日:2012-11-23

    Abstract: A sensor and its fabrication method are provided, wherein the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a top gate TFT. The photodiode sensing device includes: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line. In comparison with the conventional technology, the method for fabricating the sensor of the invention reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect free rate.

    Abstract translation: 提供了一种传感器及其制造方法,其中传感器包括:基底基板,一组栅极线和一组布置成彼此交叉的数据线;以及多个感测元件,其被排列成阵列并由该组 的栅极线和数据线组,每个感测元件包括TFT器件和光电二极管感测器件,其中TFT器件是顶栅极TFT。 光电二极管检测装置包括:与源电极连接的接收电极,设置在接收电极上的光电二极管,设置在光电二极管上的透明电极,以及设置在透明电极上并与透明电极连接的偏置线,偏置线设置为 平行于栅极线。 与传统技术相比,本发明的传感器的制造方法减少了掩模的数量和生产成本,并简化了生产过程,从而显着提高了生产能力和无缺陷率。

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