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    Memory device and method for operating the same
    42.
    发明授权
    Memory device and method for operating the same 失效
    存储器件及其操作方法

    公开(公告)号：US07542346B2

    公开(公告)日：2009-06-02

    申请号：US11704204

    申请日：2007-02-09

    申请人： Sang-Jin Park ,  Young-Soo Park ,  Sang-Min Shin ,  Young-Kwan Cha

    发明人： Sang-Jin Park ,  Young-Soo Park ,  Sang-Min Shin ,  Young-Kwan Cha

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0416 ,  B82Y10/00 ,  G11C2216/06 ,  H01L29/42332 ,  H01L29/7881

    摘要： A memory device and method for operating the same are provided. The example method may be directed to a method of performing a memory operation on a memory device, and may include applying a negative voltage bias to the memory device during a programming operation of the memory device and applying a positive voltage bias to the memory device during an erasing operation of the memory device. The example memory device may include a substrate and a gate structure formed on the substrate, the gate structure exhibiting a faster flat band voltage shift under a negative voltage bias than under a positive voltage bias, the gate structure receiving a negative voltage bias during a programming of the memory device and receiving a positive voltage bias during an erasing operation of the memory device.

    摘要翻译： 提供了一种用于操作该存储器件的存储器件和方法。 示例性方法可以针对在存储器件上执行存储器操作的方法，并且可以包括在存储器件的编程操作期间向存储器件施加负电压偏压，并且在存储器件期间向存储器件施加正电压偏压 存储器件的擦除操作。 示例性存储器件可以包括衬底和形成在衬底上的栅极结构，栅极结构在负电压偏压下比在正电压偏压下表现出更快的平带电压偏移，栅极结构在编程期间接收负电压偏置 并且在存储器件的擦除操作期间接收正电压偏置。

    Method of fabricating semiconductor memory device and semiconductor memory device fabricated by the method
    44.
    发明申请
    Method of fabricating semiconductor memory device and semiconductor memory device fabricated by the method 审中-公开
    通过该方法制造半导体存储器件和半导体存储器件的方法

    公开(公告)号：US20080246077A1

    公开(公告)日：2008-10-09

    申请号：US12012592

    申请日：2008-02-04

    申请人： Young-Soo Park ,  Sam-Jong Choi ,  Kyoo-Chul Cho ,  Tae-Soo Kang

    发明人： Young-Soo Park ,  Sam-Jong Choi ,  Kyoo-Chul Cho ,  Tae-Soo Kang

    IPC分类号： H01L27/108 ,  H01L21/425

    CPC分类号： H01L29/7881 ,  B82Y10/00 ,  H01L21/26506 ,  H01L29/40114 ,  H01L29/42332

    摘要： In a method for fabricating a semiconductor memory device and a semiconductor memory device fabricated by the method, the method includes forming a multi-layered dielectric structure including a first dielectric layer with an ion implantation layer and a second dielectric layer without an ion implantation layer, over a semiconductor substrate; forming nanocrystals in the first and second dielectric layers by diffusing ions of the ion implantation layer by thermally treating the multi-layered dielectric structure; and forming a gate electrode on the multi-layered dielectric structure.

    摘要翻译： 在通过该方法制造半导体存储器件和半导体存储器件的方法中，该方法包括形成包括具有离子注入层的第一介电层和没有离子注入层的第二电介质层的多层电介质结构， 在半导体衬底上; 通过热处理多层电介质结构，通过离子注入层的离子扩散来在第一和第二电介质层中形成纳米晶体; 以及在所述多层电介质结构上形成栅电极。

    APPARATUS AND METHOD FOR TRANSMITTING TFCI BITS FOR A HARD SPLIT MODE IN A CDMA MOBILE COMMUNICATION SYSTEM
    46.
    发明申请
    APPARATUS AND METHOD FOR TRANSMITTING TFCI BITS FOR A HARD SPLIT MODE IN A CDMA MOBILE COMMUNICATION SYSTEM 有权
    用于在CDMA移动通信系统中发送硬分离模式的TFCI位的装置和方法

    公开(公告)号：US20080146177A1

    公开(公告)日：2008-06-19

    申请号：US12025555

    申请日：2008-02-04

    申请人： Sung-Oh HWANG ,  Young-Soo Park ,  Kook-Heui Lee ,  Jae-Yoel Kim ,  Yong-Jen Kwak ,  Sung-Ho Choi ,  Ju-Hoo Lee ,  Kyeong-Chul Yang ,  Hyeon-Woo Lee

    发明人： Sung-Oh HWANG ,  Young-Soo Park ,  Kook-Heui Lee ,  Jae-Yoel Kim ,  Yong-Jen Kwak ,  Sung-Ho Choi ,  Ju-Hoo Lee ,  Kyeong-Chul Yang ,  Hyeon-Woo Lee

    IPC分类号： H04B1/18

    CPC分类号： H04L1/0057 ,  H03M7/14 ,  H04B1/707 ,  H04J13/00 ,  H04J13/10 ,  H04J13/102 ,  H04L1/0025 ,  H04L1/0069 ,  H04L1/0072

    摘要： An encoding method and apparatus for a DCH (Dedicated Channel) encoder and a DSCH (Downlink Shared Channel) encoder in a transmitter for a mobile communication system including the DCH encoder for encoding k bits among 10 input TFCI (Transport Format Combination Indicator) bits and the DSCH encoder for encoding remaining (10−k) bits among the input TFCI bits. The method comprises generating, by the DCH encoder, a first coded bit stream by encoding the k input bits into 32 bits, and outputting a (3 k+1)-bit stream by puncturing the first coded bit stream according to a specific mask pattern corresponding to the k value; and generating, by the DSCH encoder, a second coded bit stream by encoding the (10−k) input bits into 32 bits, and outputting a {3*(10−k)+1}-bit stream by puncturing the second coded bit stream according to a specific mask pattern corresponding to the (10−k) value.

    摘要翻译： 一种用于移动通信系统的发射机中的DCH（专用信道）编码器和DSCH（下行链路共享信道）编码器的编码方法和装置，包括：用于在10个输入TFCI（传输格式组合指示符）比特中编码k比特的DCH编码器和 DSCH编码器，用于对输入的TFCI位中的剩余（10-k）位进行编码。 该方法包括由DCH编码器通过将k个输入比特编码为32比特来产生第一编码比特流，并且根据特定掩模模式对第（3 + 1）比特流进行删截，并输出第（3 + 1）比特流 对应于k值; 以及由所述DSCH编码器通过将所述（10-k）个输入比特编码为32比特来产生第二编码比特流，并通过对所述第二编码比特进行删截来输出{3 *（10-k）+1}比特流 流根据与（10-k）值对应的特定掩模图案。

    Apparatus and method for character entry in a portable terminal
    47.
    发明申请
    Apparatus and method for character entry in a portable terminal 审中-公开
    便携式终端中字符输入的装置和方法

    公开(公告)号：US20070229316A1

    公开(公告)日：2007-10-04

    申请号：US11605357

    申请日：2006-11-29

    申请人： Young-Soo Park ,  Jae-Gwa Lee

    发明人： Young-Soo Park ,  Jae-Gwa Lee

    IPC分类号： H03M11/00

    CPC分类号： G06F3/0237

    摘要： A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and a character among the displayed characters is marked with a selection indication. When a move key is pressed, the selection indication is moved according to the direction of the move key. When an OK key is pressed, the character marked with the selection indication is entered.

    摘要翻译： 提供了一种终端中的字符输入方法和装置，其中字符被分组成多个字符集并且每个字符集的代表性字符被压印在相应的键上。 在字符输入方法中，当按下表示代表性字符的键时，显示属于由代表字符表示的字符集的字符，并且显示字符中的字符用选择指示标记。 当按下移动键时，根据移动键的方向移动选择指示。 按OK键后，输入标有选择指示的字符。

    Apparatus and method for character entry in a portable terminal
    48.
    发明申请
    Apparatus and method for character entry in a portable terminal 有权
    便携式终端中字符输入的装置和方法

    公开(公告)号：US20070229314A1

    公开(公告)日：2007-10-04

    申请号：US11598028

    申请日：2006-11-13

    申请人： Young-Soo Park ,  Jae-Gwa Lee

    发明人： Young-Soo Park ,  Jae-Gwa Lee

    IPC分类号： H03M11/00

    CPC分类号： G06F3/0236

    摘要： A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and any one of the displayed characters is marked with a selection indication. When a move key is pressed, the duration of the key press of the move key is measured and the selection indication is sequentially moved. When input of the move key is released, a character marked with the selection indication is entered.

    摘要翻译： 提供了一种终端中的字符输入方法和装置，其中字符被分组成多个字符集并且每个字符集的代表性字符被压印在相应的键上。 在字符输入方法中，当按下表示代表性字符的键时，显示属于由代表字符表示的字符集的字符，并且显示字符中的任何一个用选择指示标记。 当按下移动键时，测量移动键的按键持续时间，顺序移动选择指示。 当释放移动键的输入时，输入标有选择指示的字符。

    Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same
    49.
    发明申请
    Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same 有权
    制造取向控制单晶线的方法及其制造具有该晶体管的晶体管的方法

    公开(公告)号：US20070017439A1

    公开(公告)日：2007-01-25

    申请号：US11483586

    申请日：2006-07-11

    申请人： Wenxu Xianyu ,  Young-Soo Park ,  Takashi Noguchi ,  Hans Cho ,  Xiaoxin Zhang ,  Huaxiang Yin

    发明人： Wenxu Xianyu ,  Young-Soo Park ,  Takashi Noguchi ,  Hans Cho ,  Xiaoxin Zhang ,  Huaxiang Yin

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C30B29/06 ,  C30B25/005 ,  C30B29/08 ,  C30B29/60

    摘要： Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer having a first lateral surface and a second lateral surface facing the first surface; forming pores in the template layer, the pores disposed between the first lateral surface and the second lateral surface in the template layer and having first apertures in the first lateral surface; forming a single-crystalline material layer contacting the first apertures disposed in the first lateral surface of the template layer; forming second apertures connecting pores disposed in the second lateral surface; supplying gaseous crystal growth materials through the second apertures; and forming crystalline nanowires in the pores by crystal growth from the single-crystalline material layer. The nanowires may be made of crystalline materials, e.g., Si or SiGe, and may be formed parallel to the substrate. Higher quality nanowires, whose orientation may be controlled, may be formed. A higher quality transistor may be formed on the substrate by applying a method of fabricating the nanowires.

    摘要翻译： 可以提供制造纳米线的方法和制造具有该纳米线的晶体管的方法。 该方法可以包括：在衬底上形成模板层，模板层具有第一侧表面和面向第一表面的第二侧表面; 在模板层中形成孔，孔设置在模板层中的第一侧表面和第二侧表面之间，并且在第一侧表面中具有第一孔; 形成与设置在模板层的第一侧表面中的第一孔接触的单晶材料层; 形成连接设置在所述第二侧表面中的孔的第二孔; 通过所述第二孔提供气态晶体生长材料; 以及通过从单晶材料层的晶体生长在孔中形成结晶纳米线。 纳米线可以由例如Si或SiGe的结晶材料制成，并且可以与基底平行地形成。 可以形成其取向可以被控制的更高质量的纳米线。 可以通过应用制造纳米线的方法在衬底上形成更高质量的晶体管。