公开(公告)号：US20060292313A1

公开(公告)日：2006-12-28

申请号：US11473067

申请日：2006-06-23

申请人： Wenxu Xianyu ,  Hans Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

发明人： Wenxu Xianyu ,  Hans Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

IPC分类号： C09K19/00

CPC分类号： C30B29/06 ,  Y10T428/10

摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.

摘要翻译： 提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。 所述方法可以包括在基底基板上形成铝（Al）层，通过在真空下重结晶Al层，形成更高取向的Al层，形成更高取向的γ-Al 2 O 在更高取向的Al层上和/或在更高取向的γ-Al 2 O 3上外延生长硅层3层 >层。 该方法可用于制造具有较高载流子迁移率的半导体器件。

公开(公告)号：US20070017439A1

公开(公告)日：2007-01-25

申请号：US11483586

申请日：2006-07-11

申请人： Wenxu Xianyu ,  Young-Soo Park ,  Takashi Noguchi ,  Hans Cho ,  Xiaoxin Zhang ,  Huaxiang Yin

发明人： Wenxu Xianyu ,  Young-Soo Park ,  Takashi Noguchi ,  Hans Cho ,  Xiaoxin Zhang ,  Huaxiang Yin

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/06 ,  C30B25/005 ,  C30B29/08 ,  C30B29/60

摘要： Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer having a first lateral surface and a second lateral surface facing the first surface; forming pores in the template layer, the pores disposed between the first lateral surface and the second lateral surface in the template layer and having first apertures in the first lateral surface; forming a single-crystalline material layer contacting the first apertures disposed in the first lateral surface of the template layer; forming second apertures connecting pores disposed in the second lateral surface; supplying gaseous crystal growth materials through the second apertures; and forming crystalline nanowires in the pores by crystal growth from the single-crystalline material layer. The nanowires may be made of crystalline materials, e.g., Si or SiGe, and may be formed parallel to the substrate. Higher quality nanowires, whose orientation may be controlled, may be formed. A higher quality transistor may be formed on the substrate by applying a method of fabricating the nanowires.

摘要翻译： 可以提供制造纳米线的方法和制造具有该纳米线的晶体管的方法。 该方法可以包括：在衬底上形成模板层，模板层具有第一侧表面和面向第一表面的第二侧表面; 在模板层中形成孔，孔设置在模板层中的第一侧表面和第二侧表面之间，并且在第一侧表面中具有第一孔; 形成与设置在模板层的第一侧表面中的第一孔接触的单晶材料层; 形成连接设置在所述第二侧表面中的孔的第二孔; 通过所述第二孔提供气态晶体生长材料; 以及通过从单晶材料层的晶体生长在孔中形成结晶纳米线。 纳米线可以由例如Si或SiGe的结晶材料制成，并且可以与基底平行地形成。 可以形成其取向可以被控制的更高质量的纳米线。 可以通过应用制造纳米线的方法在衬底上形成更高质量的晶体管。

公开(公告)号：US07566364B2

公开(公告)日：2009-07-28

申请号：US11483586

申请日：2006-07-11

申请人： Wenxu Xianyu ,  Young-Soo Park ,  Takashi Noguchi ,  Hans S. Cho ,  Xiaoxin Zhang ,  Huaxiang Yin

发明人： Wenxu Xianyu ,  Young-Soo Park ,  Takashi Noguchi ,  Hans S. Cho ,  Xiaoxin Zhang ,  Huaxiang Yin

IPC分类号： C30B25/04

CPC分类号： C30B29/06 ,  C30B25/005 ,  C30B29/08 ,  C30B29/60

摘要： Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer having a first lateral surface and a second lateral surface facing the first surface; forming pores in the template layer, the pores disposed between the first lateral surface and the second lateral surface in the template layer and having first apertures in the first lateral surface; forming a single-crystalline material layer contacting the first apertures disposed in the first lateral surface of the template layer; forming second apertures connecting pores disposed in the second lateral surface; supplying gaseous crystal growth materials through the second apertures; and forming crystalline nanowires in the pores by crystal growth from the single-crystalline material layer. The nanowires may be made of crystalline materials, e.g., Si or SiGe, and may be formed parallel to the substrate. Higher quality nanowires, whose orientation may be controlled, may be formed. A higher quality transistor may be formed on the substrate by applying a method of fabricating the nanowires.

摘要翻译： 可以提供制造纳米线的方法和制造具有该纳米线的晶体管的方法。 该方法可以包括：在衬底上形成模板层，模板层具有第一侧表面和面向第一表面的第二侧表面; 在模板层中形成孔，孔设置在模板层中的第一侧表面和第二侧表面之间，并且在第一侧表面中具有第一孔; 形成与设置在模板层的第一侧表面中的第一孔接触的单晶材料层; 形成连接设置在所述第二侧表面中的孔的第二孔; 通过所述第二孔提供气态晶体生长材料; 以及通过从单晶材料层的晶体生长在孔中形成结晶纳米线。 纳米线可以由例如Si或SiGe的结晶材料制成，并且可以与基底平行地形成。 可以形成其取向可以被控制的更高质量的纳米线。 可以通过应用制造纳米线的方法在衬底上形成更高质量的晶体管。

公开(公告)号：US07662678B2

公开(公告)日：2010-02-16

申请号：US11473067

申请日：2006-06-23

申请人： Wenxu Xianyu ,  Hans S. Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

发明人： Wenxu Xianyu ,  Hans S. Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

IPC分类号： H01L21/00 ,  H01L29/76

CPC分类号： C30B29/06 ,  Y10T428/10

摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.

摘要翻译： 提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。 所述方法可以包括在基底上形成铝（Al）层，通过在真空下重结晶Al层形成更高取向的Al层，在更高取向的Al层上形成更高取向的γ-Al 2 O 3层 和/或在更高取向的γ-Al 2 O 3层上外延生长硅层。 该方法可用于制造具有较高载流子迁移率的半导体器件。

公开(公告)号：US20070111605A1

公开(公告)日：2007-05-17

申请号：US11600741

申请日：2006-11-17

申请人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Huaxiang Yin

发明人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Huaxiang Yin

IPC分类号： H01R24/00

CPC分类号： H01L21/823412 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/82385

摘要： A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.

摘要翻译： 半导体器件包括晶体管。 晶体管包括具有倾斜表面的基板，从倾斜表面的下部延伸的第一上表面和从倾斜表面的上端延伸的第二上表面。 栅极堆叠结构形成在倾斜表面上并且包括栅电极。 形成在第一和第二上表面中的一个上的第一杂质区域接触栅极堆叠结构。 形成在第二上表面上的第二杂质区域接触栅堆叠结构。 第一和第二杂质区之间的通道在结晶方向上沿着倾斜表面形成。

公开(公告)号：US20060267017A1

公开(公告)日：2006-11-30

申请号：US11397866

申请日：2006-04-05

申请人： Takashi Noguchi ,  Hans Cho ,  Wenxu Xianyu ,  Huaxiang Yin ,  Xiaoxin Zhang

发明人： Takashi Noguchi ,  Hans Cho ,  Wenxu Xianyu ,  Huaxiang Yin ,  Xiaoxin Zhang

IPC分类号： H01L29/76

CPC分类号： H01L29/78687 ,  H01L29/66742 ,  H01L29/78603

摘要： Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for example, germanium (x-Ge)) layer on an insulating layer, semiconductor devices using the same, and methods of manufacturing the same. The SOI structure may include a single-crystalline substrate formed of a first semiconductor material, a first insulating layer formed on the substrate and having at least one window exposing a portion of the substrate, a first epitaxial growth region formed on a surface of the substrate exposed by the window and formed of at least one of the first semiconductor material and a second semiconductor material, and a first single-crystalline layer formed on the first insulating layer and the first epitaxial growth region and formed of the second semiconductor material, and crystallized using a surface of the first epitaxial growth region as a seed layer for crystallization.

公开(公告)号：US20060261409A1

公开(公告)日：2006-11-23

申请号：US11341519

申请日：2006-01-30

申请人： Hans Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

发明人： Hans Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

IPC分类号： H01L27/12

CPC分类号： H01L29/78654 ,  H01L29/0673 ,  H01L29/66772 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/814 ,  Y10S977/90 ,  Y10S977/938 ,  Y10T428/26

摘要： A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

摘要翻译： 具有其中在衬底上形成具有细线宽度的硅纳米线膜的结构的硅纳米线衬底，其制造方法以及使用其制造薄膜晶体管的方法。 制造硅纳米线基板的方法包括：准备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图形化成带状，减小线宽 通过对绝缘膜的至少一个侧面进行底切蚀刻来绝缘膜，并且通过使硅膜熔化和结晶，在绝缘膜的上表面上形成自对准硅纳米线膜。

公开(公告)号：US20060144323A1

公开(公告)日：2006-07-06

申请号：US11311228

申请日：2005-12-20

申请人： Wenxu Xianyu ,  Takashi Noguchi ,  Young-soo Park ,  Hans Cho ,  Huaxiang Yin

发明人： Wenxu Xianyu ,  Takashi Noguchi ,  Young-soo Park ,  Hans Cho ,  Huaxiang Yin

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/26506 ,  H01L21/268 ,  H01L21/32134 ,  H01L21/76254 ,  H01L21/76256 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66772

摘要： A method of fabricating a large substrate with a locally integrated single crystalline silicon layer is provided. The method includes: forming a buffer layer on a support plate; separately fabricating a single crystalline silicon layer; attaching the single crystalline silicon layer having a predetermined thickness, which is separately fabricated, to a predetermined portion in the support plate; forming a non-single crystalline silicon layer having a predetermined thickness to cover the single crystalline silicon layer and the buffer layer; and processing the non-single crystalline silicon layer to expose a surface of the non-single crystalline silicon layer and to level the surface of the non-single crystalline silicon layer with a surface of the amorphous silicon layer.

公开(公告)号：US20060113596A1

公开(公告)日：2006-06-01

申请号：US11289311

申请日：2005-11-30

申请人： Hans Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Huaxiang Yin

发明人： Hans Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Huaxiang Yin

IPC分类号： H01L27/12

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02686

摘要： A high quality single crystal substrate and a method of fabricating the same are provided. The method of fabricating a single crystal substrate includes: forming an insulator on a substrate; forming a window in the insulator, the window exposing a portion of the substrate; forming an epitaxial growth silicon or germanium seed layer on the portion of the substrate exposed through the window; depositing a silicon or germanium material layer, which are crystallization target material layers, on the epitaxial growth silicon or germanium seed layer and the insulator; and crystallizing the crystallization target material layer by melting and cooling the crystallization target material layer.

摘要翻译： 提供了高质量的单晶基板及其制造方法。 制造单晶衬底的方法包括：在衬底上形成绝缘体; 在所述绝缘体中形成窗口，所述窗口暴露所述基板的一部分; 在通过窗户暴露的衬底的部分上形成外延生长硅或锗种子层; 在外延生长硅或锗种子层和绝缘体上沉积作为结晶靶材料层的硅或锗材料层; 并且通过熔化和冷却结晶化目标材料层来使结晶目标材料层结晶。

公开(公告)号：US20100200834A1

公开(公告)日：2010-08-12

申请号：US12659776

申请日：2010-03-22

申请人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

发明人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

IPC分类号： H01L29/775 ,  H01L29/04 ,  H01L29/02 ,  H01L27/12

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/814 ,  Y10S977/90 ,  Y10S977/932 ,  Y10S977/943

摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

摘要翻译： 示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法 。 制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽 绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。