公开(公告)号：US06974763B1

公开(公告)日：2005-12-13

申请号：US09695414

申请日：2000-10-25

申请人： Hongyong Zhang ,  Hideki Uochi ,  Akira Miyanaga ,  Hisashi Ohtani

发明人： Hongyong Zhang ,  Hideki Uochi ,  Akira Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277

摘要： A substrate on which an amorphous silicon film is formed is placed in a vacuum chamber. An organic nickel vapor or gas is introduced into the chamber and then decomposed, so that a thin film containing nickel (a catalytic element which promotes crystallization of the amorphous silicon film) or a compound thereof is uniformly deposited on the amorphous silicon film. After that, the substrate is heated at a temperature such as 550° C. lower than a normal solid phase growth temperature for a short time such as 4 hours, to uniformly crystallize the amorphous silicon film. A crystalline silicon film is obtained by this crystallization process.

摘要翻译： 将其上形成有非晶硅膜的基板放置在真空室中。 将有机镍蒸汽或气体引入室中，然后分解，使得在非晶硅膜上均匀地沉积含有镍（促进非晶硅膜的结晶的催化元素）或其化合物的薄膜。 之后，将基板在比正常固相生长温度低550℃的温度下加热4小时以上的短时间，使非晶硅膜均匀结晶。 通过该结晶法获得结晶硅膜。

公开(公告)号：US06939749B2

公开(公告)日：2005-09-06

申请号：US10395387

申请日：2003-03-25

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/2022 ,  H01L21/26506 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78678

摘要： A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. Otherwise, the catalyst element can be incorporated into the structure by introducing it into the impurity region by means of ion implantation and the like. Also a process for fabricating a thin film transistor, which comprises forming a gate electrode, a gate insulating film, and an amorphous silicon film on a substrate, implanting impurities into the amorphous silicon film to form source and drain regions as the impurity regions, introducing a catalyst element into the impurity region by adhering a coating containing the catalyst element of by means of ion doping and the like, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.

摘要翻译： 一种制造薄膜晶体管的方法，包括使非晶硅膜结晶，在其上形成栅极绝缘膜和栅电极，以自对准的方式注入杂质，粘附含有催化剂元素的涂层，其加速了 硅膜，并在低于衬底的变形温度的温度下退火所得到的结构，以激活掺杂的杂质。 否则，可以通过离子注入等将催化剂元素引入到杂质区域中而将其结合到结构中。 还有一种制造薄膜晶体管的方法，其包括在衬底上形成栅电极，栅极绝缘膜和非晶硅膜，将杂质注入到非晶硅膜中以形成源区和漏区作为杂质区，引入 通过使含有催化剂元素的涂层通过离子掺杂等粘合而将催化剂元素进入杂质区域，并在低于基板的变形温度的温度下对所得结构退火以活化掺杂的杂质。

公开(公告)号：US20050189541A1

公开(公告)日：2005-09-01

申请号：US11113294

申请日：2005-04-25

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： G02F1/1362 ,  G09G3/36 ,  H01L29/786 ,  H01L31/036

CPC分类号： H01L27/12 ,  G02F1/13624 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2320/0214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78696

摘要： A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.

公开(公告)号：US06924213B2

公开(公告)日：2005-08-02

申请号：US10252393

申请日：2002-09-24

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/004 ,  Y10S148/016 ,  Y10S148/06

摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed.After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

摘要翻译： 在通过退火结晶的硅膜上转移图案后，通过强烈射线的辐射短时间对硅膜进行退火。 特别是在通过退火的结晶工艺中，掺杂促进结晶的元素如镍掺杂。 通过退火而未结晶的区域也通过强烈射线的辐射而结晶，形成冷凝的硅膜。 在掺杂促进结晶的金属元素之后，通过在含有卤化物的气氛中退火而结晶化的硅膜上发射强光，进行短时间的光退火。 在硅膜的表面通过加热或通过在卤化气氛中辐射强射线而被氧化并且在硅膜上形成氧化物膜之后，然后蚀刻氧化膜。 结果，硅膜中的镍被去除。

公开(公告)号：US20050146667A1

公开(公告)日：2005-07-07

申请号：US11073752

申请日：2005-03-08

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： G02B5/00 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  H01L29/786

CPC分类号： G02F1/136286 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2201/121 ,  G02F2201/40

摘要： An auxiliary capacitor for a pixel of an active matrix type liquid crystal display is provided without decreasing the aperture ratio. A transparent conductive film for a common electrode is formed under a pixel electrode constituted by a transparent conductive film with an insulation film provided therebetween. Further, the transparent conductive film for the common electrode is maintained at fixed potential, formed so as to cover a gate bus line and a source bus line, and configured such that signals on each bus line are not applied to the pixel electrode. The pixel electrode is disposed so that all edges thereof overlap the gate bus line and source bus line. As a result, each of the bus lines serves as a black matrix. Further, the pixel electrode overlaps the transparent conductive film for the common electrode to form a storage capacitor.

摘要翻译： 提供一种用于有源矩阵型液晶显示器的像素的辅助电容器，而不会降低开口率。 用于公共电极的透明导电膜形成在由透明导电膜构成的像素电极之下，其间设置有绝缘膜。 此外，用于公共电极的透明导电膜保持固定电位，形成为覆盖栅极总线和源极总线，并且被配置为使得每个总线上的信号不被施加到像素电极。 像素电极被设置成使得其所有边缘与栅极总线和源极总线重叠。 结果，每条总线作为黑矩阵。 此外，像素电极与用于公共电极的透明导电膜重叠形成存储电容器。

公开(公告)号：US06884698B1

公开(公告)日：2005-04-26

申请号：US08807737

申请日：1997-02-27

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Hongyong Zhang ,  Naoaki Yamaguchi

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Hongyong Zhang ,  Naoaki Yamaguchi

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757

摘要： A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.

摘要翻译： 通过使用具有优异特性的结晶硅膜来制造半导体器件，特别是薄膜晶体管的工艺。 该方法包括与其接触形成氮化硅膜和非晶硅膜，通过加热非晶硅膜引入能够促进非晶硅膜结晶的催化剂元件，从而使非晶硅膜的至少一部分结晶， 并通过用与其相当的激光束或强光照射硅膜来加速结晶。

公开(公告)号：US06881615B2

公开(公告)日：2005-04-19

申请号：US09978696

申请日：2001-10-18

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L31/20 ,  H01L21/336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/2026 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/41

摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子的浓度熔化含有碳，氮和氧的非晶半导体膜。 通过照射等效于激光束的激光束或高强度光，可以通过照射激光束或低强度光 激光束到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。

公开(公告)号：US20050056849A1

公开(公告)日：2005-03-17

申请号：US10959981

申请日：2004-10-08

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L29/78618 ,  H01L29/78621

摘要： To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region 145 having a P-type behavior more potential than that of a drain region 146 is arranged between a channel forming region 134 and the drain region 146 in the P-channel type thin film transistor whereby the P-channel type thin film transistor having the low OFF characteristic can be provided and a low concentration impurity region 136 is arranged between a channel forming region 137 and a drain region 127 in the N-channel type thin film transistor whereby the N-channel type thin film transistor having the low OFF characteristic and where deterioration is restrained can be provided.

摘要翻译： 为了提供具有低OFF特性的薄膜晶体管，并且提供P沟道型和N沟道型薄膜晶体管，其中P沟道型和N沟道型薄膜晶体管的特性差被校正， 在P沟道型薄膜晶体管的沟道形成区域134和漏极区域146之间配置具有比漏极区域146更多的P型特性的区域145，由此P沟道型薄膜晶体管具有 可以提供低OFF特性，并且在N沟道型薄膜晶体管中的沟道形成区域137和漏极区域127之间布置低浓度杂质区域136，由此具有低OFF特性的N沟道型薄膜晶体管和 可以抑制劣化。

公开(公告)号：US20050040402A1

公开(公告)日：2005-02-24

申请号：US10952774

申请日：2004-09-30

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Hongyong Zhang ,  Naoaki Yamaguchi

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Hongyong Zhang ,  Naoaki Yamaguchi

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/10 ,  H01L27/12

CPC分类号： H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757

摘要： [Purpose] It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor. [Structure] A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained.

摘要翻译： [目的]本发明的目的是获得具有优选薄膜晶体管特性的结晶硅膜。 [结构]通过以下步骤获得具有改善的结晶度的晶体硅膜：在玻璃基板上形成与非晶硅膜基本上接触的氮化硅膜; 引入催化剂元素如镍; 在500〜600℃的温度下进行退火处理，进行结晶化; 并进一步用激光照射，从而可以获得具有改善的结晶度的结晶硅膜。 通过使用由此获得的结晶硅膜，可以获得具有改善的特性的诸如TFT的半导体器件。

公开(公告)号：US06847064B2

公开(公告)日：2005-01-25

申请号：US10140176

申请日：2002-05-08

申请人： Hongyong Zhang ,  Naoto Kusumoto

发明人： Hongyong Zhang ,  Naoto Kusumoto

IPC分类号： H01L21/265 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1274 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.

摘要翻译： 一种具有一对杂质掺杂的第二半导体层的半导体器件，其形成在其中具有沟道形成区的第一半导体层上，所述第一半导体膜的外边缘与所述杂质掺杂的第二半导体层的外边缘至少部分地共同延伸 。 半导体器件还包括形成在一对杂质掺杂的第二半导体层上的源电极和漏电极，其中该掺杂杂质的第二半导体层对延伸超过源电极和漏电极的内侧边缘，从而从上部形成阶梯部分 源极和漏极的表面到第一半导体膜的表面。