摘要:
A method of memory BIST (Built-In Self Test) and memory repair that stores a redundancy calculation on-chip, as opposed to scanning this data off-chip for later use. This method no longer requires level-sensitive scan design (LSSD) scanning of memory redundancy data off-chip to the tester, and therefore does not require re-contacting of the chip for electrical fuse blow.
摘要:
According to the preferred embodiment, a device and method is provided for reducing power consumption in memory devices. The preferred embodiment reduces power consumption by providing a sense amplifier that reduces power consumption while providing high performance. In the preferred embodiment, the sense amplifier comprises a bi-directional sense amp that is configurable for use on low power static random access memory (SRAM) devices. The bi-directional sense amp allows the same sense amp to be used for both read and write operations on the memory cells. The preferred embodiment sense amp facilitates the use of differential data buses, further reducing power consumption while providing high performance. Thus, the preferred embodiment bi-directional differential sense amp reduces the device size and complexity, reducing power consumption while providing high performance memory access.
摘要:
Aspects of the invention provide for creating a built-in-self-test (BIST) organizational file for an integrated circuit (IC) chip. In one embodiment, a method includes: receiving a design file including a hierarchy of memory modules, each module including a plurality of memory wrappers; scanning each memory wrapper in each hierarchical level of memory modules for a BIST type; creating, based on the hierarchical level and the BIST type, an ordered list of memory wrappers; adding, based on the BIST type, a BIST engine for each memory wrapper listed in the ordered list; and adding a plurality of references statements to the ordered list to create the BIST organizational file.
摘要:
Disclosed is a program for creating a checking-statement which can be subsequently used to validate interconnections between logic blocks in a circuit design. The checking-statement is created by taking a description of how logic blocks in a circuit design are associated to one another (if at all), and cross referencing the description with rule statements specific to each logic block defining the allowable connections between the specific logic block and other logic blocks.
摘要:
Disclosed is a program for creating a checking-statement which can be subsequently used to validate interconnections between logic blocks in a circuit design. The checking-statement is created by taking a description of how logic blocks in a circuit design are associated to one another (if at all), and cross referencing the description with rule statements specific to each logic block defining the allowable connections between the specific logic block and other logic blocks.
摘要:
Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.
摘要:
Disclosed are embodiments of an asynchronous pipeline circuit. In each stage of the circuit, a variable delay line is incorporated into the request signal path. A tap encoder monitors data entering the stage to detect any state changes occurring in specific data bits. Based on the results of this monitoring (i.e., based on which of the specific data bits, if any, exhibit state changes), the tap encoder enables a specific tap in the variable delay line and, thereby, automatically adjusts the delay of a request signal transmitted along the request signal path. Using a variable request signal delay allows data from a transmitting stage to be captured by a receiving stage prior to the expiration of the maximum possible processing time associated with the transmitting stage, thereby minimizing overall processing time. Also disclosed are embodiments of methods for asynchronous pipeline processing with variable request signal delay and for incorporating variable request signal delay into an asynchronous pipeline circuit design.
摘要:
A method and system for repairing defective memory in a semiconductor chip. The chip has memory locations, redundant memory, and a central location for ordered fuses. The ordered fuses identify in compressed format defective sections of the memory locations. The defective sections are replaceable by sections of the redundant memory. The ordered fuses have an associated a fuse bit pattern of bits which sequentially represents the defective sections in the compressed format. The method and system determines the order in which the memory locations are wired together; designs a shift register of latches through the memory locations in accordance with the order in which the memory locations are wired together; and associates each of the latches with a corresponding bit of an uncompressed bit pattern from which the fuse bit pattern is derived. The uncompressed bit pattern comprises a sequence of bits, representing the defective sections in uncompressed format.
摘要:
An approach that manages redundant memory in a voltage island is described. In one embodiment there is a design structure embodied in a machine readable medium used in a design process of a semiconductor device. In this embodiment, the design structure includes one or more voltage islands representing a power cycled region. One or more non-power cycled regions are located about the one or more voltage islands. Each of the one or more non-power cycled regions comprises at least one memory using redundancy and a repair register associated with each memory using redundancy. A redundancy initialization component is coupled to the one or more voltage islands and the one or more non-power cycled regions.
摘要:
A method, an integrated circuit structure, and an associated design structure for the integrated circuit structure have a plurality of logic blocks, at least one of which is a redundant logic block. In addition, the structure includes a logic built-in self test device (LBIST) operatively connected to the logic blocks that determines the functionality of each of the logic blocks. An array of memory elements is included within the structure and is operatively connected to the logic blocks. At least one of the memory elements comprises a redundant memory element. The structure also includes an array built-in self test device (ABIST) operatively connected to the array of memory elements that determines the functionality of each of the memory elements. One feature is the use of a single controller operatively connected to the register, the logic blocks, and the memory elements. The single controller repairs both the logic blocks elements that have failing functionality and the memory elements that have failing functionality.