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    Etching processes used in MEMS production
    41.
    发明授权
    Etching processes used in MEMS production 失效
    用于MEMS生产的蚀刻工艺

    公开(公告)号：US08323516B2

    公开(公告)日：2012-12-04

    申请号：US12210042

    申请日：2008-09-12

    申请人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

    发明人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

    IPC分类号： H01B13/00

    CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

    摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

    摘要翻译： 可以以各种方式增加蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。 未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。 蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。 蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。 蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

    Capacitive MEMS device with programmable offset voltage control
    42.
    发明授权
    Capacitive MEMS device with programmable offset voltage control 有权
    具有可编程失调电压控制的电容式MEMS器件

    公开(公告)号：US07978395B2

    公开(公告)日：2011-07-12

    申请号：US12789195

    申请日：2010-05-27

    申请人： Daniel Felnhofer ,  Evgeni Gousev

    发明人： Daniel Felnhofer ,  Evgeni Gousev

    IPC分类号： G02B26/00 ,  G02B26/02

    CPC分类号： B81B3/0086 ,  B81B2201/045 ,  G02B26/001 ,  G11C23/00

    摘要： A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e. applying electrical field across the material) or by UV-illumination and injection of electrical charges over the energy barrier. The interferometric modulator may then be retained in an actuated state with a significantly lower actuation voltage, thereby saving power.

    摘要翻译： 形成电容MEMS器件，其具有陷阱并保持电荷的电极之间的材料。 该材料可以在几种配置中实现。 它可以是具有不同带隙能量或带能级的区域的多层电介质叠层。 电介质材料本身可以是歪斜的，即当在材料中预先制造缺陷或捕获位置时。 另一种结构涉及导电材料的薄层，其中电介质层的禁止间隙具有能级。 可以通过有利地使用材料中的电荷存储的方法来对器件进行编程（即，偏移和阈值电压预设），其中干涉式调制器以滞后曲线偏移的方式预充电，并且致动电压 调制器的阈值显着降低。 在编程阶段期间，电极和材料之间的电荷转移可以通过向电极施加电压（即跨越材料施加电场）或通过UV照射和在能量屏障上注入电荷来执行。 然后干涉式调制器可以以明显更低的致动电压保持在致动状态，从而节省功率。

    MEMS CAVITY-COATING LAYERS AND METHODS
    43.
    发明申请
    MEMS CAVITY-COATING LAYERS AND METHODS 有权
    MEMS CAVAY-COATING LAYERS AND METHODS

    公开(公告)号：US20100245979A1

    公开(公告)日：2010-09-30

    申请号：US12795294

    申请日：2010-06-07

    申请人： Ana R. Londergan ,  Bangalore R. Natarajan ,  Evgeni Gousev ,  James Randolph Webster ,  David Heald

    发明人： Ana R. Londergan ,  Bangalore R. Natarajan ,  Evgeni Gousev ,  James Randolph Webster ,  David Heald

    IPC分类号： G02B26/00

    CPC分类号： G02B26/001 ,  B81B3/0008 ,  B81B2201/047

    摘要： Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.

    摘要翻译： 包括MEMS器件（例如干涉式调制器）的器件，方法和系统，其包括其中层涂覆多个表面的空腔。 该层是保形的或非保形的。 在一些实施例中，该层由原子层沉积（ALD）形成。 优选地，该层包括电介质材料。 在一些实施例中，MEMS器件还表现出改进的特性，例如移动电极之间的改善的电绝缘性，降低的静摩擦力和/或改善的机械性能。

    CAPACITIVE MEMS DEVICE WITH PROGRAMMABLE OFFSET VOLTAGE CONTROL
    44.
    发明申请
    CAPACITIVE MEMS DEVICE WITH PROGRAMMABLE OFFSET VOLTAGE CONTROL 有权
    具有可编程偏移电压控制的电容式MEMS器件

    公开(公告)号：US20100238537A1

    公开(公告)日：2010-09-23

    申请号：US12789195

    申请日：2010-05-27

    申请人： Daniel Felnhofer ,  Evgeni Gousev

    发明人： Daniel Felnhofer ,  Evgeni Gousev

    IPC分类号： G02B26/00 ,  C23C14/22

    CPC分类号： B81B3/0086 ,  B81B2201/045 ,  G02B26/001 ,  G11C23/00

    摘要： A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e. applying electrical field across the material) or by UV-illumination and injection of electrical charges over the energy barrier. The interferometric modulator may then be retained in an actuated state with a significantly lower actuation voltage, thereby saving power.

    摘要翻译： 形成电容MEMS器件，其具有陷阱并保持电荷的电极之间的材料。 该材料可以在几种配置中实现。 它可以是具有不同带隙能量或带能级的区域的多层电介质叠层。 电介质材料本身可以是歪斜的，即当在材料中预先制造缺陷或捕获位置时。 另一种结构涉及导电材料的薄层，其中电介质层的禁止间隙具有能级。 可以通过有利地使用材料中的电荷存储的方法来对器件进行编程（即，偏移和阈值电压预设），其中干涉式调制器以滞后曲线偏移的方式预充电，并且致动电压 调制器的阈值显着降低。 在编程阶段期间，电极和材料之间的电荷转移可以通过向电极施加电压（即跨越材料施加电场）或通过UV照射和在能量屏障上注入电荷来执行。 然后干涉式调制器可以以明显更低的致动电压保持在致动状态，从而节省功率。

    MEMS CAVITY-COATING LAYERS AND METHODS
    47.
    发明申请
    MEMS CAVITY-COATING LAYERS AND METHODS 有权
    MEMS CAVAY-COATING LAYERS AND METHODS

    公开(公告)号：US20080231931A1

    公开(公告)日：2008-09-25

    申请号：US11689430

    申请日：2007-03-21

    申请人： Ana R. Londergan ,  Bangalore R. Natarajan ,  Evgeni Gousev ,  James Randolph Webster ,  David Heald

    发明人： Ana R. Londergan ,  Bangalore R. Natarajan ,  Evgeni Gousev ,  James Randolph Webster ,  David Heald

    IPC分类号： G02F1/00 ,  H01L31/02

    CPC分类号： G02B26/001 ,  B81B3/0008 ,  B81B2201/047

    摘要： Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.

    摘要翻译： 包括MEMS器件（例如干涉式调制器）的器件，方法和系统，其包括其中层涂覆多个表面的空腔。 该层是保形的或非保形的。 在一些实施例中，该层由原子层沉积（ALD）形成。 优选地，该层包括电介质材料。 在一些实施例中，MEMS器件还表现出改进的特性，例如移动电极之间的改善的电绝缘性，降低的静摩擦力和/或改善的机械性能。

    Electrode and interconnect materials for MEMS devices
    48.
    发明授权
    Electrode and interconnect materials for MEMS devices 失效
    用于MEMS器件的电极和互连材料

    公开(公告)号：US07369292B2

    公开(公告)日：2008-05-06

    申请号：US11416920

    申请日：2006-05-03

    申请人： Gang Xu ,  Evgeni Gousev

    发明人： Gang Xu ,  Evgeni Gousev

    IPC分类号： G02F1/03 ,  G02B26/00

    CPC分类号： G02B26/001 ,  B81B2201/047 ,  B81C1/00246

    摘要： A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.

    摘要翻译： 提出了一种包括金属化半导体的微机电（MEMS）器件。 金属化半导体由于其低电阻率而可用于导体应用，并且由于其半导体性质而可用于晶体管应用。 此外，金属化半导体可以被调谐以具有允许其对于光学MEMS器件有用的光学性质。