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13 条记录 (耗时 0.013 秒)

    Composite magneto-optic memory and media
    4.
    发明授权
    Composite magneto-optic memory and media 失效
    复合磁光存储器和介质

    公开(公告)号：US5793711A

    公开(公告)日：1998-08-11

    申请号：US655115

    申请日：1996-05-29

    申请人： Nestor Alexander Bojarczuk, Jr. ,  Richard Joseph Gambino ,  Ralph Ruf

    发明人： Nestor Alexander Bojarczuk, Jr. ,  Richard Joseph Gambino ,  Ralph Ruf

    IPC分类号： C22C19/00 ,  C22C38/00 ,  G11B11/10 ,  G11B11/105 ,  H01F1/00 ,  H01F10/12 ,  H01F41/20 ,  G11B7/00 ,  G11B7/08 ,  G11B7/24

    CPC分类号： B82Y25/00 ,  G11B11/10545 ,  G11B11/10586 ,  H01F1/0063 ,  G11B11/10543 ,  Y10S428/90 ,  Y10T428/26 ,  Y10T428/265

    摘要： A magneto-optic memory and a magnetic material is described incorporating a polarized light beam directed towards a magnetic material and an analyzer for intercepting the polarized light beam after passing through the magnetic material or after being reflected by the magnetic material. The magnetic material includes a matrix of metal such as iron, cobalt, nickel, and alloys thereof and a plurality of separated phases distributed in the matrix such as EuS, EuO, EuOTb, PtMnSb, MnAs, MnBi, MnSb, CrO.sub.2, CrTe, GdN, Gd.sub.4 C, other compounds of a rare earth element and manganese compounds. Terbium or neodymium may be dissolved in the matrix of metal and in the plurality of separated phases. The invention overcomes the problem of providing a magnetic material having a Curie point above room temperature, a square perpendicular hysteresis loop at room temperature, a large magneto-optic rotation at the wavelength of interest and a deposition temperature suitable depositing on polymer substrates.

    摘要翻译： 描述了磁光存储器和磁性材料，其包括朝向磁性材料的偏振光束和用于在通过磁性材料之后或在被磁性材料反射之后截取偏振光束的分析器。 磁性材料包括诸如铁，钴，镍及其合金的金属基体以及分布在诸如EuS，EuO，EuOTb，PtMnSb，MnAs，MnBi，MnSb，CrO 2，CrTe，GdN之类的基体中的多个分离相 ，Gd4C，其他化合物的稀土元素和锰化合物。 铽或钕可以溶解在金属基体和多个分离相中。 本发明克服了提供具有高于室温的居里点，室温下的正方形垂直磁滞回线，感兴趣波长处的大磁光旋转和适合沉积在聚合物基底上的沉积温度的磁性材料的问题。

    Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair
    10.
    发明授权
    Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair 失效
    金属嵌入式钝化层结构，用于微电子互连形成，定制和修复

    公开(公告)号：US06255671B1

    公开(公告)日：2001-07-03

    申请号：US09002840

    申请日：1998-01-05

    申请人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Sampath Purushothaman

    发明人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Sampath Purushothaman

    IPC分类号： H01L3300

    CPC分类号： H01L21/76894 ,  H01L21/76823 ,  H01L21/76838 ,  H01L23/5254 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride film by a thermal process driven by absorption of light having a predetermined wavelength. Single films comprised of AlN are also within the scope of this invention, wherein an Al trace or interconnect is formed by laser radiation of wavelength 248 nm so as to contact circuitry that exists under the film. Multilayered stacks of films are also within the scope of the teachings of this invention. In this case each film layer may be separately deposited and then illuminated to selectively form the desired electrical connection(s), which may also connect to conductive feature(s) in an underlying layer, or a plurality of metal nitride layers are stacked bottom to top in order of increasing electronic band gap energy value, and then the conductive features are written into selective ones of the layers by controlling the wavelength of the light to be absorbed in a desired layer. The teachings of this invention can be employed to fabricate fuses and anti-fuses enabling selective circuit customization, test and repair. Also disclosed is a technique for forming electrical resistors in a metal nitride layer by adjusting the electrical resistance of the metallization formed from the metal nitride film layer.

    摘要翻译： 结构包括形式为MN的金属氮化物膜，其中M选自Ga，In，AlGa，AlIn和AlGaIn。 该结构具有通过由具有预定波长的光吸收驱动的热处理而形成在金属氮化物膜内和从金属氮化物膜形成的至少一个导电金属区域。 由AlN组成的单个膜也在本发明的范围内，其中通过波长为248nm的激光辐射形成Al迹线或互连，以便接触存在于膜下面的电路。 多层薄膜也在本发明的教导的范围内。 在这种情况下，每个膜层可以被分开沉积，然后照亮以选择性地形成所需的电连接，其也可以连接到下层中的导电特征，或者多个金属氮化物层被堆叠到底部 顶部按照增加电子带隙能量值的顺序，然后通过控制要在所需层中吸收的光的波长将导电特征写入选择层中。 本发明的教导可用于制造保险丝和抗熔丝，从而能够进行选择性电路定制，测试和修理。 还公开了通过调整由金属氮化物膜层形成的金属化层的电阻来形成金属氮化物层中的电阻器的技术。