公开(公告)号：US08278679B2

公开(公告)日：2012-10-02

申请号：US12235269

申请日：2008-09-22

申请人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/005 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405

摘要： An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.

摘要翻译： 提出了一种LED器件及其制造方法，包括嵌入式顶部电极。 LED装置包括LED结构和顶部电极。 LED结构包括设置在基板上的层，包括有源发光区域。 LED结构的顶层是顶部接触层。 顶部电极嵌入到顶部接触层中，其中顶部电极电接触顶部接触层。

公开(公告)号：US20100059779A1

公开(公告)日：2010-03-11

申请号：US12547428

申请日：2009-08-25

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/08 ,  H01L33/20

摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件具有衬底和覆盖衬底的LED结构。 嵌入式元件嵌入LED结构的一层或多层内。 在一个实施例中，嵌入元件包括延伸穿过LED结构的电介质材料，使得嵌入元件被LED结构包围。 在另一个实施例中，嵌入式元件仅延伸穿过LED结构的上层，或者部分地穿过LED结构的上层。 另外的导电层可以形成在LED结构的上层和嵌入元件上。

公开(公告)号：US20100038661A1

公开(公告)日：2010-02-18

申请号：US12269497

申请日：2008-11-12

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/16 ,  H01L33/0079 ,  H01L33/10

摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件具有衬底，衬底上的反射结构以及反射结构上的LED结构。 反射结构由非金属材料形成。 在一个实施例中，反射结构由具有不同折射率的不同非金属材料的交替层形成。 在另一个实施例中，反射结构由高孔隙率硅和低孔隙率硅的交替层形成。 在另一个实施例中，反射结构由二氧化硅形成，其可以允许使用更少的层。 反射结构可以直接形成在与LED结构相同的基板上，或者形成在单独的基板上，然后结合到LED结构。

公开(公告)号：US20090267105A1

公开(公告)日：2009-10-29

申请号：US12235269

申请日：2008-09-22

申请人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/005 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405

摘要： An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.

摘要翻译： 提出了一种LED器件及其制造方法，包括嵌入式顶部电极。 LED装置包括LED结构和顶部电极。 LED结构包括设置在基板上的层，包括有源发光区域。 LED结构的顶层是顶部接触层。 顶部电极嵌入到顶部接触层中，其中顶部电极电接触顶部接触层。

公开(公告)号：US08415691B2

公开(公告)日：2013-04-09

申请号：US12202167

申请日：2008-08-29

申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/46 ,  H01L2933/0083

摘要： A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

公开(公告)号：US08399273B2

公开(公告)日：2013-03-19

申请号：US12539757

申请日：2009-08-12

申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC分类号： H01L21/00

CPC分类号： H01L33/145 ,  H01L33/0066 ,  H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36 ,  H01L33/62 ,  H01L2933/0066

摘要： A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED装置具有较低的LED层和位于其间的发光层的上部LED层。 在上LED层中形成电流阻挡层，使得在与上层LED层接触的电极之间的电流流过电流阻挡层。 当电流阻挡层位于电极和发光层之间时，由发光层发射的光不被电极阻挡，并且光效率增加。 可以通过将上部LED层的一部分转换成电阻区域来形成电流阻挡层。 在一个实施方案中，诸如镁，碳或硅的离子注入上层LED层以形成电流阻挡层。

公开(公告)号：US08236583B2

公开(公告)日：2012-08-07

申请号：US12554578

申请日：2009-09-04

申请人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

发明人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

摘要翻译： 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

公开(公告)号：US20100062551A1

公开(公告)日：2010-03-11

申请号：US12554578

申请日：2009-09-04

申请人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

发明人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC分类号： H01L27/15

CPC分类号： H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

摘要翻译： 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

公开(公告)号：US20100055818A1

公开(公告)日：2010-03-04

申请号：US12541787

申请日：2009-08-14

申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC分类号： H01L33/00

CPC分类号： H01L33/0062 ,  H01L21/78 ,  H01L33/0066 ,  H01L33/0079 ,  H01L2924/01078 ,  H01S5/1231 ,  H01S5/2275

摘要： A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件通过在第一衬底上形成LED结构而形成。 将第一衬底的一部分转换成多孔层，并且在与第一衬底相对的表面上的LED结构上形成导电衬底。 第一衬底沿着多孔层与LED结构分离，并且从LED结构中去除任何剩余的材料。

公开(公告)号：US08058669B2

公开(公告)日：2011-11-15

申请号：US12535525

申请日：2009-08-04

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K1/0206 ,  H05K1/113 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/00

摘要： A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.

摘要翻译： 电路结构包括载体基板，其包括第一通孔和第二通孔。 第一通孔和第二通孔中的每一个从载体衬底的第一表面延伸到与第一表面相对的载体衬底的第二表面。 电路结构还包括结合到载体基板的第一表面上的发光二极管（LED）芯片。 LED芯片包括分别连接到第一通孔和第二通孔的第一电极和第二电极。