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    Efficient interference cancellation in analog memory cell arrays
    41.
    发明授权
    Efficient interference cancellation in analog memory cell arrays 有权
    模拟存储单元阵列中的高效干扰消除

    公开(公告)号：US08209588B2

    公开(公告)日：2012-06-26

    申请号：US12332368

    申请日：2008-12-11

    申请人： Uri Perlmutter ,  Yoav Kasorla ,  Oren Golov

    发明人： Uri Perlmutter ,  Yoav Kasorla ,  Oren Golov

    IPC分类号： G06F11/10

    CPC分类号： G06F11/1072 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/3418 ,  G11C27/005 ,  G11C29/00 ,  G11C29/50 ,  G11C2029/5002 ,  G11C2211/5634

    摘要： A method includes storing data in a group of analog memory cells by writing first storage values to the cells. After storing the data, second storage values are read from the cells using one or more first read thresholds. Third storage values that potentially cause cross-coupling interference in the second storage values are identified, and the third storage values are processed, to identify a subset of the second storage values as severely-interfered values. Fourth storage values are selectively re-read from the cells holding the severely-interfered values using one or more second read thresholds, different from the first read thresholds. The cross-coupling interference in the severely-interfered storage values is canceled using the re-read fourth storage values. The second storage values, including the severely-interfered values in which the cross-coupling interference has been canceled, are processed so as to reconstruct the data stored in the cell group.

    摘要翻译： 一种方法包括通过将第一存储值写入单元来将数据存储在一组模拟存储单元中。 在存储数据之后，使用一个或多个第一读取阈值从单元读取第二存储值。 识别潜在地在第二存储值中引起交叉耦合干扰的第三存储值，并且处理第三存储值，以将第二存储值的子集识别为严重干扰的值。 使用与第一读取阈值不同的一个或多个第二读取阈值，从保持严重干扰值的单元有选择地重新读取第四存储值。 使用重新读取的第四存储值来消除严重干扰的存储值中的交叉耦合干扰。 处理包括交叉耦合干扰已被消除的严重干扰值的第二存储值，以便重构存储在小区组中的数据。

    Memory device with multiple-accuracy read commands
    42.
    发明授权
    Memory device with multiple-accuracy read commands 有权
    具有多重精度读取命令的存储器件

    公开(公告)号：US08059457B2

    公开(公告)日：2011-11-15

    申请号：US12405275

    申请日：2009-03-17

    申请人： Uri Perlmutter ,  Ofir Shalvi ,  Yoav Kasorla ,  Naftali Sommer ,  Dotan Sokolov

    发明人： Uri Perlmutter ,  Ofir Shalvi ,  Yoav Kasorla ,  Naftali Sommer ,  Dotan Sokolov

    IPC分类号： G11C11/34

    CPC分类号： G11C8/08 ,  G11C11/5642 ,  G11C16/349 ,  G11C27/005 ,  G11C29/00 ,  G11C29/021 ,  G11C29/028 ,  G11C2211/5641

    摘要： A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.

    摘要翻译： 一种用于数据存储的方法包括至少定义用于从模拟存储器单元读取存储值的第一和第二读取命令。 第一读取命令以第一精度读取存储值，并且第二读取命令以比第一精度更精细的第二精度读取存储值。 针对要在特定组的存储单元上执行的读取操作来评估条件。 响应于评估条件选择第一和第二读取命令中的一个。 使用所选择的读取命令从存储器单元的给定组中读取存储值。

    Selective Activation of Programming Schemes in Analog Memory Cell Arrays
    43.
    发明申请
    Selective Activation of Programming Schemes in Analog Memory Cell Arrays 有权
    模拟存储器单元阵列中编程方案的选择性激活

    公开(公告)号：US20100220509A1

    公开(公告)日：2010-09-02

    申请号：US12714501

    申请日：2010-02-28

    申请人： Dotan Sokolov ,  Naftali Sommer ,  Uri Perlmutter ,  Ofir Shalvi

    发明人： Dotan Sokolov ,  Naftali Sommer ,  Uri Perlmutter ,  Ofir Shalvi

    IPC分类号： G11C27/00 ,  G11C7/00

    CPC分类号： G11C27/005 ,  G11C7/02 ,  G11C11/5628 ,  G11C16/3418

    摘要： A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.

    摘要翻译： 一种用于数据存储的方法包括：定义第一编程方案，其编程一组模拟存储器单元，同时减少由与该组相邻的至少一个存储器单元引起的干扰;以及第二编程方案，其对该组模拟存储器单元进行编程 不能减少第一编程方案减少的所有干扰。 基于针对模拟存储器单元定义的标准来选择第一和第二编程方案之一。 使用所选择的编程方案将数据存储在模拟存储器单元的组中。

    STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N
    44.
    发明申请
    STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N 有权
    存储在N位/细胞模拟记忆体细胞中的位置/细胞密度M> N

    公开(公告)号：US20100124088A1

    公开(公告)日：2010-05-20

    申请号：US12618732

    申请日：2009-11-15

    申请人： Ofir Shalvi ,  Naftali Sommer ,  Uri Perlmutter ,  Dotan Sokolov

    发明人： Ofir Shalvi ,  Naftali Sommer ,  Uri Perlmutter ,  Dotan Sokolov

    IPC分类号： G11C27/00

    CPC分类号： G06F11/1068 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C27/005 ,  G11C2211/5641

    摘要： A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

    摘要翻译： 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据，并且支持一组内置的编程命令。 每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。 存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

    EFFICIENT READOUT FROM ANALOG MEMORY CELLS USING DATA COMPRESSION
    45.
    发明申请
    EFFICIENT READOUT FROM ANALOG MEMORY CELLS USING DATA COMPRESSION 有权
    使用数据压缩对模拟记忆体进行高效的读取

    公开(公告)号：US20090228761A1

    公开(公告)日：2009-09-10

    申请号：US12397368

    申请日：2009-03-04

    申请人： Uri Perlmutter ,  Dotan Sokolov ,  Ofir Shalvi ,  Oren Golov

    发明人： Uri Perlmutter ,  Dotan Sokolov ,  Ofir Shalvi ,  Oren Golov

    IPC分类号： G06F11/10 ,  G06N5/02 ,  G06F12/00 ,  G06F12/16

    CPC分类号： G06F3/0638 ,  G06F3/0604 ,  G06F3/0679 ,  G06F11/1008 ,  G06F12/08

    摘要： A method for data storage includes storing data in a group of analog memory cells by writing respective input storage values to the memory cells in the group. After storing the data, respective output storage values are read from the analog memory cells in the group. Respective confidence levels of the output storage values are estimated, and the confidence levels are compressed. The output storage values and the compressed confidence levels are transferred from the memory cells over an interface to a memory controller.

    摘要翻译： 一种用于数据存储的方法包括通过将相应的输入存储值写入组中的存储器单元来将数据存储在一组模拟存储器单元中。 在存储数据之后，从组中的模拟存储器单元读取相应的输出存储值。 估计输出存储值的相对置信水平，并且压缩置信水平。 输出存储值和压缩置信水平通过接口从存储器单元传送到存储器控制器。

    Selective re-programming of analog memory cells
    49.
    发明授权
    Selective re-programming of analog memory cells 有权
    模拟存储单元的选择性重新编程

    公开(公告)号：US08787080B2

    公开(公告)日：2014-07-22

    申请号：US13539759

    申请日：2012-07-02

    申请人： Naftali Sommer ,  Uri Perlmutter ,  Shai Winter

    发明人： Naftali Sommer ,  Uri Perlmutter ,  Shai Winter

    IPC分类号： G11C16/04

    CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3459 ,  G11C29/78

    摘要： A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.

    摘要翻译： 一种用于数据存储的方法包括在包括多个模拟存储器单元的存储器中定义擦除状态，一组未擦除的编程状态和未擦除编程状态的部分子集。 最初将数据存储在第一组模拟存储器单元中，通过将第一组中的至少一些存储单元中的每一个从擦除状态编程为从非擦除编程状态集合中选择的各自的非擦除编程状态 。 在最初存储数据之后，编程可能对第一组产生干扰的第二组模拟存储器单元。 在对第二组进行编程之后，通过重复仅对其各自编程状态属于部分子集的第一组中的存储器单元进行编程，对该第一组进行有选择地重新编程。