公开(公告)号：US20250085628A1

公开(公告)日：2025-03-13

申请号：US18957102

申请日：2024-11-22

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA

IPC: G03F7/021 ,  G03F7/32

Abstract: An object of the present invention is to provide a pattern forming method capable of forming a pattern having excellent limit resolution, and a method for manufacturing an electronic device. The pattern forming method of the present invention is a pattern forming method having a step 1 of forming a metal resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a metal compound having at least one bond selected from the group consisting of a metal-carbon bond and a metal-oxygen bond, a step 2 of exposing the metal resist film, and a step 3 of obtaining a pattern by subjecting the exposed metal resist film to a development treatment with a developer including an organic solvent to remove a non-exposed portion, in which the pattern forming method may further have, after the step 3, a step 4 of washing the pattern with a rinsing liquid including an organic solvent, and the developer or the rinsing liquid satisfies predetermined requirements.

公开(公告)号：US20250004374A1

公开(公告)日：2025-01-02

申请号：US18827190

申请日：2024-09-06

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Satomi Takahashi

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with high DOF performance. An actinic ray-sensitive or radiation-sensitive resin composition according to the present invention includes a resin that includes a repeating unit represented by a formula (I) and a repeating unit represented by a formula (II) and has a main chain that is cleaved by exposure, and an ionic compound represented by a formula (III), and the resin satisfies predetermined requirements,

公开(公告)号：US20240280915A1

公开(公告)日：2024-08-22

申请号：US18609116

申请日：2024-03-19

Applicant: FujiFilm Corporation

Inventor： Kei YAMAMOTO ,  Naohiro TANGO ,  Michihiro SHIRAKAWA

IPC: G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30

CPC classification number: G03F7/7065 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  G03F7/706831 ,  G03F7/706837

Abstract: Provided are a method for testing a photosensitive composition and a method for producing a photosensitive composition that can easily test whether or not the photosensitive composition exhibits a predetermined LWR. The method for testing a photosensitive composition has a step 1 of using a reference photosensitive composition including an acid decomposable resin having a group that is decomposed by an action of an acid to generate a polar group and a photoacid generator, to form a resist film on a substrate 1, removing the resist film on the substrate 1 using a treatment liquid, and measuring a number of defects on the substrate 1 in which the resist film on the substrate 1 has been removed, to obtain reference data; a step 2 of using a photosensitive composition for measurement including components of the same types as types of components included in the reference photosensitive composition, to form a resist film on a substrate 2, removing the resist film on the substrate 2 using a treatment liquid, and measuring a number of defects on the substrate 2 in which the resist film on the substrate 2 has been removed, to obtain measurement data; and a step 3 of performing comparison between the reference data and the measurement data to determine whether or not an allowable range is satisfied, wherein the treatment liquid includes predetermined components.

公开(公告)号：US20240219831A1

公开(公告)日：2024-07-04

申请号：US18411364

申请日：2024-01-12

Applicant: FUJIFILM Corporation

Inventor： Kazuhiro MARUMO ,  Satomi TAKAHASHI ,  Yohei ISHIJI ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/004 ,  G03F7/00

CPC classification number: G03F7/0048 ,  G03F7/0045 ,  G03F7/70033

Abstract: The present invention provides a pattern forming method that enables the formation of a pattern excellent in resolution and evenness and a method for producing an electronic device. The pattern forming method according to the present invention includes a resist film-forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition that undergoes an increase in the degree of solubility in an organic solvent due to action of exposure, acid, base, or heating, an exposure step of exposing the resist film, and a developing step of developing the exposed resist film with a developer including an organic solvent. The organic solvent includes an ester-based solvent having 6 or less carbon atoms and a hydrocarbon-based solvent.

公开(公告)号：US20230185192A1

公开(公告)日：2023-06-15

申请号：US18157899

申请日：2023-01-23

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Masafumi KOJIMA ,  Michihiro SHIRAKAWA

IPC: G03F7/039 ,  C08F220/18 ,  G03F7/038

CPC classification number: G03F7/0395 ,  C08F220/1811 ,  G03F7/0382 ,  C08F2800/20

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition by which a pattern having excellent LWR performance can be formed. In addition, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition.
The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition including a resin of which polarity increases through decomposition by the action of an acid, and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin has a repeating unit represented by General Formula (1) as a repeating unit having an acid-decomposable group, and the compound that generates an acid upon irradiation with actinic rays or radiation includes any one or more of a compound (I) or a compound (II).

公开(公告)号：US20230133710A1

公开(公告)日：2023-05-04

申请号：US18063496

申请日：2022-12-08

Applicant: FUJIFILM Corporation

Inventor： Aina USHIYAMA ,  Akira TAKADA ,  Masafumi KOJIMA ,  Akiyoshi GOYO ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/20

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having excellent LWR performance can be formed even after the composition is stored for a long period of time. In addition, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin of which polarity increases through decomposition by an action of an acid, and a compound that generates an acid upon irradiation with actinic rays or radiation, and the compound that generates an acid upon irradiation with actinic rays or radiation is selected from compounds (I) and (II).

公开(公告)号：US20210318616A1

公开(公告)日：2021-10-14

申请号：US17344967

申请日：2021-06-11

Applicant: FUJIFILM Corporation

Inventor： Daisuke ASAKAWA ,  Takashi KAWASHIMA ,  Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/40 ,  G03F7/32

Abstract: According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a resin P having a repeating unit represented by General Formula (P1) and a compound that generates an acid having a pKa of −1.40 or more upon irradiation with actinic rays or radiation; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided. Mp represents a single bond or a divalent linking group. Lp represents a divalent linking group. Xp represents O, S, or NRN1. RN1 represents a hydrogen atom or a monovalent organic group. Rp represents a monovalent organic group.

公开(公告)号：US20190258168A1

公开(公告)日：2019-08-22

申请号：US16396786

申请日：2019-04-29

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Michihiro SHIRAKAWA ,  Tadashi OOMATSU

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  C08F220/16 ,  C08F212/14 ,  C08F220/28 ,  C08F220/36 ,  G03F7/039 ,  G03F7/038 ,  G03F7/30

Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.

公开(公告)号：US20180364571A1

公开(公告)日：2018-12-20

申请号：US16110394

申请日：2018-08-23

Applicant: FUJIFILM Corporation

Inventor： Ryo NISHIO ,  Masafumi KOJIMA ,  Akiyoshi GOTO ,  Tomotaka TSUCHIMURA ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/038 ,  G03F7/039 ,  C07C309/12 ,  C07C321/28 ,  C07D327/08 ,  C07D217/08 ,  C07D335/16 ,  C07C309/15 ,  C07C309/17 ,  C07D213/70 ,  C07D333/46 ,  C07J43/00

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

公开(公告)号：US20170349686A1

公开(公告)日：2017-12-07

申请号：US15683884

申请日：2017-08-23

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Akiyoshi GOTO

IPC: C08F212/14 ,  G03F7/004 ,  C08F222/38 ,  C08F12/22 ,  G03F7/039 ,  C08F12/20

CPC classification number: C08F212/14 ,  C08F12/20 ,  C08F12/22 ,  C08F222/38 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/325

Abstract: A pattern forming method includes the following steps (a) to (d): (a) applying an actinic ray-sensitive or radiation-sensitive resin composition including a resin capable of increasing a polarity by the action of an acid onto a substrate to form a resist film, (b) forming an upper layer film on the resist film, (c) exposing the resist film having the upper layer film formed thereon, and (d) developing the exposed resist film using an organic developer to form a pattern, in which the resin capable of increasing the polarity by the action of an acid includes an acid-decomposable repeating unit having an acid-leaving group a having 4 to 7 carbon atoms, and the maximum value of the number of carbon atoms and the protection rate of the acid-leaving group a satisfy specific conditions.