公开(公告)号：US20140051206A1

公开(公告)日：2014-02-20

申请号：US13966663

申请日：2013-08-14

Applicant: First Solar, Inc

Inventor： Arnold Allenic ,  Zhigang Ban ,  John Barden ,  Benjamin Milliron ,  Rick C. Powell

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/243 ,  C23C14/246 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02617 ,  H01L21/02631 ,  H01L31/02963

Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.

Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。

公开(公告)号：US20130312824A1

公开(公告)日：2013-11-28

申请号：US13897915

申请日：2013-05-20

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Rick C. Powell ,  Gang Xiong

IPC: H01L31/18 ,  H01L31/0296

CPC classification number: H01L31/0296 ,  H01L31/022441 ,  H01L31/056 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device.

公开(公告)号：US20130183794A1

公开(公告)日：2013-07-18

申请号：US13739183

申请日：2013-01-11

Applicant: First Solar, Inc.

Inventor： Gang Xiong ,  Rick C. Powell ,  Xilin Peng ,  John Barden ,  Arnold Allenic ,  Feng Liao ,  Kenneth M. Ring

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/407 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/483 ,  C23C16/52 ,  H01J37/3476 ,  H01J2237/332 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.