摘要:
Disclosed is a rubber composition for a studless tire tread, comprising natural rubber, styrene-butadiene rubber and butadiene rubber, as raw rubber, and including 1˜10 parts by weight of co-poly-(paraphenylene/3,4-oxydiphenylene terephthalamide) fiber based on 100 parts by weight of the solid content of the raw rubber. Particularly, this invention provides a rubber composition for a studless tire tread, in which not only ice braking performance but also handling stability on dry roads and wear resistance are increased.
摘要:
Lithium rechargeable batteries having functional center pins are provided. A lithium rechargeable battery has a center pin whose top and bottom ends are blocked by a thermal cut-off composition to reduce the void volume inside a bare cell during initial overcharge. The thermal cut-off composition melts at a temperature within a specific temperature range, e.g. between about 80 and about 250° C. This prevents the battery from exploding and igniting. Thus, the inventive lithium rechargeable batteries have improved thermal stability.
摘要:
A semiconductor device includes an inter-metal dielectric (IMD) formed on a substrate and having at least one via hole, a via hole formed by filling the via hole with a first metal, a reductant layer formed on the via plug and the inter-metal dielectric to a predetermined thickness, and a metal line layer formed by depositing a second metal on the reductant layer.
摘要:
A liquid crystal display device (LCD) is provided. The LCD includes first and second substrates; a plurality of gate lines on the first substrate; a plurality of data lines crossing the gate lines to define a plurality of pixel regions; a thin film transistor at a crossing intersection of the gate line and the data line; a pixel electrode in the pixel region, the pixel electrode having a zigzag slit pattern formed therein, the slit pattern dividing the pixel electrode into at least two domains; a dielectric protrusion on the second substrate; and a liquid crystal layer between the first and second substrates.
摘要:
A driving apparatus for an organic light-emitting diode includes an organic light-emitting diode, a driving switch that drives the organic light-emitting diode in response to a control voltage applied to a gate terminal of the driving switch, a high-level voltage source that supplies a high-level voltage to the driving switch, a data driving circuit that supplies a data voltage to a data line of the driving apparatus, a reference voltage source that supplies a reference voltage to the driving apparatus, and a capacitor that applies the control voltage to the gate terminal of the driving switch, the control voltage being a difference between the data voltage and the reference voltage.
摘要:
A scribing apparatus simultaneously performs scribing processes for a TFT substrate and a C/F substrate in the same location, thereby efficiently utilizing equipment space and achieving enhanced productivity. A substrate cutting apparatus is equipped with the scribing apparatus, and a substrate cutting method uses the substrate cutting apparatus. The scribing apparatus includes a stage for attracting a first mother substrate including first and second conjoined substrates, a scribing belt for holding a second mother substrate including conjoined third and fourth substrates, and a head unit for forming cracks in the second substrate of the first mother substrate or in the third substrate of the second mother substrate.
摘要:
The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.
摘要翻译:本发明涉及使用原子层沉积工艺在衬底上形成氧化硅膜的方法。 具体地,通过使用Si 2 C 6 C 6源的原子层沉积工艺,在低温和高沉积速率下形成氧化硅膜,这与使用 SiCl 4 SO 4源。 在上述方法中使用的原子层沉积装置可以使用HF气体或HF气体和含有-OH基团的气体的混合气体在低温下有效地进行现场清洗。
摘要:
Techniques for poster-thumbnail and/or animated thumbnail development and/or usage to effectively navigate for potential selection between a plurality of images or programs/video files or video segments. The poster and animated thumbnail images are presented in a GUI on adapted apparatus to provide an efficient system for navigating, browsing and/or selecting images or programs or video segments to be viewed by a user. The poster and animated thumbnails may be automatically produced without human-necessary editing and may also have one or more various associated data (such as text overlay, image overlay, cropping, text or image deletion or replacement, and/or associated audio).
摘要:
Provided is a method of forming a parity-check matrix for a parallel concatenated LDPC code, wherein the parallel concatenated LDPC code is composed of a first LDPC code, a second LDPC code, and an interleaver connecting therebetween. The method includes: the steps of (a) finding a degree distribution of a first LDPC code and a degree distribution of a second LDPC; and (b) forming the parity-check matrices of the first and second LDPC codes satisfying the degree distributions, wherein in the (a) step, the degree distributions of the first and second LDPC codes are found using performance measurement by a density evolution method, and wherein in the density evolution method, the probability density of a message forwarded from a variable node of the first LDPC code to a check node reflects a probability density of extrinsic information outputted from the second LDPC code, and the probability density of a message forwarded from a variable node of the second LDPC code to a check node reflects a probability density of extrinsic information outputted from the first LDPC code.
摘要:
A method for forming an Al interconnect is disclosed. A disclosed method comprises: depositing a Ti layer on a substrate having predetermined devices; depositing a TiN layer on the entire surface of the Ti layer by performing a CVD process; performing a plasma treatment for the TiN layer; depositing an Al layer on the TiN layer; and forming an ARC on the entire surface of the Al layer.