公开(公告)号：US20100227458A1

公开(公告)日：2010-09-09

申请号：US12714252

申请日：2010-02-26

申请人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20 ,  C23C16/48

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US08512530B2

公开(公告)日：2013-08-20

申请号：US12926115

申请日：2010-10-27

申请人： Heung-Yeol Na ,  Jong-Won Hong ,  Seok-Rak Chang ,  Ki-Yong Lee

发明人： Heung-Yeol Na ,  Jong-Won Hong ,  Seok-Rak Chang ,  Ki-Yong Lee

IPC分类号： C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32477 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/345

摘要： A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber.

摘要翻译： 溅射装置包括具有第一和第二区域的处理室，处理室内部的金属靶，处理室内的目标传送单元，目标传送单元构造成在第一和第二区域之间移动金属靶，衬底 保持器在处理室的第二区域中，以及在处理室的第一区域中的磁性组件，磁性组件插入在目标转印单元和处理室的壁之间。

公开(公告)号：US08373097B2

公开(公告)日：2013-02-12

申请号：US12713982

申请日：2010-02-26

申请人： Heung-Yeol Na ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Heung-Yeol Na ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F27D11/00 ,  A21B1/00 ,  A21B1/22

CPC分类号： F27B17/0025 ,  H01L21/67109

摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

摘要翻译： 一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。 这里，加热器安装成对应于多个基板的所有侧面。 因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。

公开(公告)号：US08343281B2

公开(公告)日：2013-01-01

申请号：US12711495

申请日：2010-02-24

申请人： Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： C23C16/00 ,  C23C16/52 ,  C23C16/448

CPC分类号： F17D1/02 ,  C23C16/4485 ,  C23C16/52 ,  Y10T137/0318

摘要： Provided are a source gas supply unit capable of supplying a constant amount of source gas to a deposition chamber to deposit a uniform layer, and a deposition apparatus and method using the same. The source gas supply unit includes a canister in which a source is stored, a heater heating the canister, a source gas supply pipe provided on one side of the canister, a measuring unit installed on the source gas supply pipe and measuring an amount of source gas passing through the source gas supply pipe, and a temperature controller connected to the heater and the measuring unit. The temperature controller controls the heater based on the amount of the source gas measured by the measuring unit.

摘要翻译： 提供能够向沉积室供给恒定量的源气体以沉积均匀层的源气体供应单元，以及使用该源气体供应单元的沉积设备和方法。 源气体供给单元包括储存有源的罐，加热罐的加热器，设置在罐的一侧的源气体供给管，安装在源气体供给管上并测量源的量的测量单元 通过原料气体供给管的气体以及连接到加热器和测量单元的温度控制器。 温度控制器基于由测量单元测量的源气体的量来控制加热器。

公开(公告)号：US08048783B2

公开(公告)日：2011-11-01

申请号：US12714252

申请日：2010-02-26

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US20110120859A1

公开(公告)日：2011-05-26

申请号：US12948650

申请日：2010-11-17

申请人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： C23C14/34 ,  C23C14/18

CPC分类号： C23C14/3407 ,  C23C14/185 ,  C23C14/34 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3438

摘要： Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.

摘要翻译： 提供一种溅射装置，其以非常低的浓度将金属催化剂沉积在非晶硅层上以使非晶硅结晶，并且特别地最小化由预溅射工艺引起的金属催化剂的不均匀性而不降低工艺效率。 该溅射装置以非常低的浓度提高沉积在非晶硅层上的金属催化剂的均匀性。 溅射装置包括具有第一和第二区域的处理室，位于处理室内的金属靶，移动金属靶的靶转印单元，具有用于控制从金属靶排出的金属催化剂的行进方向的第一屏蔽件， 以及设置在所述第二区域中以能够面对所述金属靶的衬底保持器。 作为装载在基板保持架上的基板与金属对象物之间的距离的线性距离与第一屏蔽件的长度之间的距离差小于3cm。

公开(公告)号：US20100263594A1

公开(公告)日：2010-10-21

申请号：US12714019

申请日：2010-02-26

申请人： Heung-Yeol NA ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Seok-Rak Chang ,  Yun-Mo Chung ,  Tae-Hoon Yang ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Won-Bong Baek ,  Jae-Wan Jung

发明人： Heung-Yeol NA ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Seok-Rak Chang ,  Yun-Mo Chung ,  Tae-Hoon Yang ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Won-Bong Baek ,  Jae-Wan Jung

IPC分类号： C23C16/00

CPC分类号： H01L21/67109

摘要： A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat.

摘要翻译： 一种基板处理装置，其通过均匀加热基板，在多个基板上形成薄膜并对基板进行热处理。 基板处理装置包括处理室，堆叠基板的船，位于处理室外的外部加热器，将船移入和移出处理室的进给器，位于进料器下方的下加热器，以及 位于船中心的中央加热器。

公开(公告)号：US20100040991A1

公开(公告)日：2010-02-18

申请号：US12539187

申请日：2009-08-11

申请人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： F27D15/02

CPC分类号： F27D11/12 ,  F27B9/20 ,  F27B9/36 ,  F27D9/00 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67248 ,  H01L21/6776

摘要： An in-line annealing apparatus and a method of annealing a substrate using the in-line annealing apparatus in which a plurality of heating devices provide a transportation path of a substrate and heat the substrate transported along the transportation path to a crystallization temperature, and an instantaneous high-temperature annealing unit heats the substrate positioned in the transportation path between the heating devices to a instantaneous annealing temperature. The in-line annealing apparatus and the method of annealing a substrate using the same provide a highly efficient annealing process that can be performed at various temperatures including a high temperature of 700° C. or higher.

摘要翻译： 使用在线退火装置中的在线退火装置和使基板退火的方法，其中多个加热装置提供基板的输送路径并将沿输送路径输送的基板加热至结晶温度， 瞬时高温退火单元将位于加热装置之间的输送路径中的基板加热到瞬时退火温度。 在线退火装置和使用其的基板的退火方法提供了可以在包括700℃或更高的高温的各种温度下进行的高效退火工艺。

公开(公告)号：US20100006424A1

公开(公告)日：2010-01-14

申请号：US12481166

申请日：2009-06-09

申请人： Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Heung-Yeol Na ,  Ki-Yong Lee

发明人： Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Heung-Yeol Na ,  Ki-Yong Lee

IPC分类号： C23C14/35

CPC分类号： C23C14/54 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.

摘要翻译： 一种用于防止磁化的磁控管单元移动装置和具有该磁控管的移动装置。 磁控管单元移动装置包括邻近目标设置的磁控管单元，以产生特定的磁场;以及移动单元，用于将磁控管单元和目标物间隔开，使得在目标上产生的磁场的强度在 预定参考强度范围。 可以将目标和磁控管单元分开，以便在不执行处理时防止目标被磁化。

公开(公告)号：US20070134914A1

公开(公告)日：2007-06-14

申请号：US11585087

申请日：2006-10-24

申请人： Seong-Hwee Cheong ,  Sang-Woo Lee ,  Jong-Won Hong ,  Seung-Gil Yang ,  Kyung-In Choi ,  Hyun-Bae Lee

发明人： Seong-Hwee Cheong ,  Sang-Woo Lee ,  Jong-Won Hong ,  Seung-Gil Yang ,  Kyung-In Choi ,  Hyun-Bae Lee

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76846 ,  H01L21/28562 ,  H01L21/76843

摘要： A semiconductor memory device and a method of fabricating the same are disclosed. The semiconductor memory device may include a conductive layer doped with impurities, a non-conductive layer on the conductive layer and undoped with impurities, an interlayer insulating film on the non-conductive layer and having a contact hole for exposing an upper surface of the non-conductive layer, an ohmic tungsten film on the contact hole, a lower portion of the ohmic tungsten film permeating the non-conductive layer to come in contact with the conductive layer, a tungsten nitride film on the contact hole on the ohmic tungsten film, and a tungsten film on the tungsten nitride film to fill the contact hole.

摘要翻译： 公开了一种半导体存储器件及其制造方法。 半导体存储器件可以包括掺杂有杂质的导电层，在导电层上不掺杂的非导电层，在非导电层上的层间绝缘膜，并且具有用于暴露非导电层的上表面的接触孔 导电层，接触孔上的欧姆钨膜，渗透非导电层的欧姆钨膜的下部与导电层接触，在欧姆钨膜上的接触孔上形成氮化钨膜， 并在氮化钨膜上形成钨膜以填充接触孔。