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公开(公告)号：US20120182790A1
公开(公告)日：2012-07-19
申请号：US13344921
申请日：2012-01-06
IPC分类号： G11C11/24
CPC分类号： H01L27/10808 , G11C5/10 , G11C11/401 , G11C11/4085 , H01L21/84 , H01L23/528 , H01L23/53228 , H01L27/0688 , H01L27/10805 , H01L27/10873 , H01L27/10882 , H01L27/10897 , H01L27/1207 , H01L28/91 , H01L29/7869
摘要： The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.
摘要翻译： DRAM的存储器容量增强。 半导体存储器件包括：驱动器电路，其包括单晶半导体衬底的一部分，设置在驱动电路上的多层布线层;以及设置在多层布线层上的存储单元阵列层。 也就是说，存储单元阵列与驱动电路重叠。 因此，与在含有单晶体半导体材料的基板的同一平面上设置驱动电路和存储单元阵列的情况相比，可以提高半导体存储器件的集成度。
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公开(公告)号：US20120113345A1
公开(公告)日：2012-05-10
申请号：US13224395
申请日：2011-09-02
IPC分类号： G02F1/136 , G02F1/1333
CPC分类号： G02F1/13452 , G02F1/1303 , G02F1/133305 , G02F1/1345 , G02F1/13454 , H01L21/67132 , H01L2221/68363 , H01L2224/16 , H01L2924/01079
摘要： A driver circuit for use with a passive matrix or active matrix electro-optical display device such as a liquid crystal display is fabricated to occupy a reduced area. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. The driver circuit can be formed on a large-area substrate such as a glass substrate, while the display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate.
摘要翻译： 制造用于诸如液晶显示器的无源矩阵或有源矩阵电光显示装置的驱动电路以占据减小的面积。 使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。 电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。 随后，驱动电路的基板被去除。 驱动电路可以形成在诸如玻璃基板的大面积基板上，而显示装置可以形成在具有高抗震性的轻质材料如塑料基板上。
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公开(公告)号：US20120075917A1
公开(公告)日：2012-03-29
申请号：US13236965
申请日：2011-09-20
申请人： Yasuhiko Takemura
发明人： Yasuhiko Takemura
IPC分类号： G11C11/24
CPC分类号： H01L27/10897 , G11C7/02 , G11C8/14 , G11C11/404 , G11C11/4076 , G11C11/4085 , G11C11/4087 , G11C11/4091 , G11C11/4094 , G11C11/4096 , G11C11/4097 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10805 , H01L27/10811 , H01L27/10873 , H01L27/10894 , H01L27/1207 , H01L27/1225 , H01L27/124 , H01L27/1255
摘要： In a conventional DRAM, when the capacitance of a capacitor is reduced, an error of reading data easily occurs. A plurality of cells are connected to one bit line MBL_m. Each cell includes a sub bit line SBL_n_m and 4 to 64 memory cells (a memory cell CL_n_m—1 or the like). Further, each cell includes selection transistors STr1_n_m and STr2_n_m and an amplifier circuit AMP_n_m that is a complementary inverter or the like is connected to the selection transistor STr2_n_m. Since parasitic capacitance of the sub bit line SBL_n_m is sufficiently small, potential change due to electric charge in a capacitor of each memory cell can be amplified by the amplifier circuit AMP_n_m without an error, and can be output to the bit line.
摘要翻译： 在常规DRAM中，当电容器的电容减小时，容易发生读取数据的错误。 多个单元被连接到一个位线MBL_m。 每个单元包括子位线SBL_n_m和4至64个存储单元（存储单元CL_n_m-1等）。 此外，每个单元包括选择晶体管STr1_n_m和STr2_n_m，作为互补反相器等的放大器电路AMP_n_m连接到选择晶体管STr2_n_m。 由于子位线SBL_n_m的寄生电容足够小，所以每个存储单元的电容器中的电荷引起的电位变化都可以被放大器电路AMP_n_m放大而没有错误，并且可以被输出到位线。
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公开(公告)号：US20110260158A1
公开(公告)日：2011-10-27
申请号：US13093018
申请日：2011-04-25
申请人： Yasuhiko Takemura
发明人： Yasuhiko Takemura
IPC分类号： H01L27/105
CPC分类号： G11C11/404 , G11C11/405 , G11C16/02 , G11C16/0433 , H01L27/0207 , H01L27/105 , H01L27/108 , H01L27/11 , H01L27/11517 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L28/40
摘要： To provide a semiconductor memory device storing data, in which a transistor whose leakage current between a source/drain in off state is small is used as a writing transistor. In a matrix of a memory unit formed of two memory cells, in each of which a drain of a writing transistor is connected to a gate of a reading transistor and one electrode of a capacitor, a gate of the writing transistor, and the other electrode of the capacitor in a first memory cell are connected to a first word line, and a second word line, respectively. In a second memory cell, a gate of the writing transistor, and the other electrode of the capacitor are connected to the second word line, and the first word line, respectively. Further, to increase the degree of integration, gates of the reading transistors of memory cells are disposed in a staggered configuration.
摘要翻译： 为了提供一种存储数据的半导体存储器件，其中使用其中处于断开状态的源极/漏极之间的漏电流小的晶体管作为写入晶体管。 在由两个存储单元形成的存储器单元的矩阵中，每个写入晶体管的漏极连接到读取晶体管的栅极和电容器的一个电极，写入晶体管的栅极和另一个电极 第一存储单元中的电容器分别连接到第一字线和第二字线。 在第二存储单元中，写入晶体管的栅极和电容器的另一个电极分别连接到第二字线和第一字线。 此外，为了增加积分度，存储单元的读取晶体管的栅极以交错的配置布置。
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公开(公告)号：US07952097B2
公开(公告)日：2011-05-31
申请号：US09917633
申请日：2001-07-31
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/78654 , H01L29/78675
摘要： A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
摘要翻译： 通过控制其结晶度来提高薄膜晶体管的可靠性和产率的方法。 该方法包括以下步骤：在岛状非晶硅膜上形成栅电极，使用栅电极作为掩模注入杂质，形成含有镍，铁，钴，铂和钯中的至少一种的涂膜，使其粘附 到部分杂质区域，并在低于纯非晶硅的结晶温度的温度下进行退火以促进从其开始的结晶，并使杂质区域和沟道形成区域结晶。
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公开(公告)号：US07943930B2
公开(公告)日：2011-05-17
申请号：US12143035
申请日：2008-06-20
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。
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公开(公告)号：US07812894B2
公开(公告)日：2010-10-12
申请号：US12498520
申请日：2009-07-07
IPC分类号： G02F1/1368 , G02F1/1345 , H01L27/12
CPC分类号： H01L29/4908 , H01L27/1255 , H01L29/42384 , H01L2224/48091 , H01L2224/48464 , H01L2224/73204 , H01L2924/00014
摘要： Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semiconductor integrated circuit chips. After the semiconductor integrated circuit chips are adhered to the substrate, the chips are connected with wirings formed on the substrate by a chip on glass (COG) method, a wire bonding method or the like, to manufacture the electric device having a liquid crystal display (LCD) on one substrate.
摘要翻译： 使用薄膜晶体管（TFT），有源矩阵电路，用于驱动有源矩阵电路的驱动电路等形成在一个基板上。 使用单晶半导体集成电路芯片形成驱动电气设备所必需的诸如中央处理单元（CPU）和存储器的电路。 在将半导体集成电路芯片粘附到基板之后，芯片通过玻璃（COG）法，引线接合方法等与形成在基板上的布线连接，以制造具有液晶显示器的电气设备 （LCD）在一个基板上。
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公开(公告)号：US07585715B2
公开(公告)日：2009-09-08
申请号：US12068466
申请日：2008-02-07
申请人： Yasuhiko Takemura , Hiroki Adachi
发明人： Yasuhiko Takemura , Hiroki Adachi
IPC分类号： H01L21/336 , H01L21/84
CPC分类号： H01L29/78618 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78609
摘要： A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.
摘要翻译： 一种半导体器件，包括在其上具有绝缘表面的衬底上的至少两个薄膜晶体管，条件是薄膜晶体管通过将每个薄膜晶体管的有源层的外周氧化为底部而分离，以提供氧化物 绝缘膜。
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公开(公告)号：US07542103B2
公开(公告)日：2009-06-02
申请号：US11735656
申请日：2007-04-16
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F2201/121 , G02F2201/40
摘要： An auxiliary capacitor for a pixel of an active matrix type liquid crystal display is provided without decreasing the aperture ratio. A transparent conductive film for a common electrode is formed under a pixel electrode constituted by a transparent conductive film with an insulation film provided therebetween. Further, the transparent conductive film for the common electrode is maintained at fixed potential, formed so as to cover a gate bus line and a source bus line, and configured such that signals on each bus line are not applied to the pixel electrode. The pixel electrode is disposed so that all edges thereof overlap the gate bus line and source bus line. As a result, each of the bus lines serves as a black matrix. Further, the pixel electrode overlaps the transparent conductive film for the common electrode to form a storage capacitor.
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公开(公告)号：US07446843B2
公开(公告)日：2008-11-04
申请号：US11776683
申请日：2007-07-12
IPC分类号： G02F1/1345
CPC分类号： G02F1/13452 , G02F1/1303 , G02F1/133305 , G02F1/1345 , G02F1/13454 , H01L21/67132 , H01L2221/68363 , H01L2224/16 , H01L2924/01079
摘要： A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.
摘要翻译： 一种制造用于无源矩阵或有源矩阵电光显示装置如液晶显示器的驱动电路的方法。 驱动电路占用的空间比以前少。 使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。 电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。 随后，驱动电路的基板被去除。 这使得电路的配置比TAB方法或COG方法所要求的电路的配置简单得多，因为导线不是以复杂的方式铺设。 驱动电路可以形成在诸如玻璃基板的大面积基板上。 显示装置可以形成在具有高抗冲击性的轻质材料上，例如塑料基板。 因此，可以获得具有优异便携性的显示装置。
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