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41.发明授权公开(公告)号：US07505234B2
公开(公告)日：2009-03-17
申请号：US11930699
申请日：2007-10-31
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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公开(公告)号：US07476414B2
公开(公告)日：2009-01-13
申请号：US11001174
申请日：2004-12-02
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
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43.发明申请MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY 审中-公开磁阻效应元件，磁头，磁力再生装置和磁记忆公开(公告)号：US20080068764A1
公开(公告)日：2008-03-20
申请号：US11931089
申请日：2007-10-31
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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公开(公告)号：US20050094322A1
公开(公告)日：2005-05-05
申请号：US11001174
申请日：2004-12-02
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
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公开(公告)号：US08363362B2
公开(公告)日：2013-01-29
申请号：US13360856
申请日：2012-01-30
IPC分类号： G11B5/027
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01L43/08 , Y10T428/1107
摘要： According to one embodiment, a magnetoresistive element includes a first ferromagnetic layer a magnetization direction of which is pinned, a second ferromagnetic layer a magnetization direction of which is changed depending on an external magnetic field, an intermediate layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and including an insulating layer and a magnetic conductive column, an alloy layer formed between the magnetic conductive column in the intermediate layer and the second ferromagnetic layer and including at least one of FeCoAl and FeCoAlCu, and a pair of electrodes configured to supply a current perpendicularly to a film plane of a stacked film including the first ferromagnetic layer, the intermediate layer, the alloy layer and the second ferromagnetic layer.
摘要翻译： 根据一个实施例，磁阻元件包括其磁化方向被钉扎的第一铁磁层，其磁化方向根据外部磁场而改变的第二铁磁层，布置在第一铁磁层和第二铁磁层之间的中间层 第二铁磁层，并且包括绝缘层和导电柱，在中间层中的导电柱和第二铁磁层之间形成并且包括FeCoAl和FeCoAlCu中的至少一种的合金层，以及一对电极， 垂直于包括第一铁磁层，中间层，合金层和第二铁磁层的层叠膜的膜平面的电流。
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46.发明授权公开(公告)号：US08274765B2
公开(公告)日：2012-09-25
申请号：US12585623
申请日：2009-09-18
IPC分类号： G11B5/39
CPC分类号： C23C8/36 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/398 , G11B5/3983 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/08
摘要： A method of manufacturing a magnetoresistive element includes forming a metal layer on a first ferromagnetic layer, oxidizing the metal layer to form an oxide layer in which unoxidized metal is remained and a magnetic conduction column penetrating the oxide layer in a thickness direction and including at least a part of constituent elements of the first ferromagnetic layer, annealing a resultant structure at a higher temperature than a temperature at which the oxide layer is formed to convert at least a part of a periphery of the magnetic conduction column into a magnetic oxide including a part of constituent elements of the oxide layer and at least a part of constituent elements of the magnetic conduction column, and forming a second ferromagnetic layer.
摘要翻译： 一种制造磁阻元件的方法包括在第一铁磁层上形成金属层，氧化金属层以形成其中保留非氧化金属的氧化物层和在厚度方向上贯穿氧化物层的磁导柱，并且至少包括 第一铁磁层的构成元件的一部分，在比形成氧化物层的温度更高的温度下对所得结构进行退火，以将至少一部分导磁柱的周边转化成包括部分的磁性氧化物 的氧化物层的构成元素和磁导柱的构成元素的至少一部分，并形成第二铁磁层。
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47.发明申请公开(公告)号：US20100079918A1
公开(公告)日：2010-04-01
申请号：US12585623
申请日：2009-09-18
CPC分类号： C23C8/36 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/398 , G11B5/3983 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/08
摘要： A method of manufacturing a magnetoresistive element includes forming a metal layer on a first ferromagnetic layer, oxidizing the metal layer to form an oxide layer in which unoxidized metal is remained and a magnetic conduction column penetrating the oxide layer in a thickness direction and including at least a part of constituent elements of the first ferromagnetic layer, annealing a resultant structure at a higher temperature than a temperature at which the oxide layer is formed to convert at least a part of a periphery of the magnetic conduction column into a magnetic oxide including a part of constituent elements of the oxide layer and at least a part of constituent elements of the magnetic conduction column, and forming a second ferromagnetic layer.
摘要翻译： 一种制造磁阻元件的方法包括在第一铁磁层上形成金属层，氧化金属层以形成其中保留非氧化金属的氧化物层和在厚度方向上贯穿氧化物层的磁导柱，并且至少包括 第一铁磁层的构成元件的一部分，在比形成氧化物层的温度更高的温度下对所得结构进行退火，以将至少一部分导磁柱的周边转化成包括部分的磁性氧化物 的氧化物层的构成元素和磁导柱的构成元素的至少一部分，并形成第二铁磁层。
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48.发明授权公开(公告)号：US07289305B2
公开(公告)日：2007-10-30
申请号：US11074643
申请日：2005-03-09
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要翻译： 磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性 间隔层和无磁化层。
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49.发明授权公开(公告)号：US08031443B2
公开(公告)日：2011-10-04
申请号：US12071589
申请日：2008-02-22
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996
摘要： A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要翻译： 一种磁电阻效应元件，包括：第一磁化层，其一个方向上的磁化基本固定; 磁化根据外部磁场旋转的第二磁化层; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。
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50.发明申请Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory 审中-公开磁阻效应元件，磁头，磁记录/再现装置和磁存储器公开(公告)号：US20080080098A1
公开(公告)日：2008-04-03
申请号：US11892890
申请日：2007-08-28
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08
摘要： A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要翻译： 磁阻效应元件包括：第一磁化层，其一个方向基本上固定磁化; 磁化根据外部磁场旋转的第二磁化层; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。
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