公开(公告)号：US07179746B2

公开(公告)日：2007-02-20

申请号：US10725063

申请日：2003-12-02

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

IPC分类号： H01L21/00 ,  H01L21/302

CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面， 或低OH密度气氛，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。

公开(公告)号：US20050012171A1

公开(公告)日：2005-01-20

申请号：US10902414

申请日：2004-07-30

申请人： Susumu Hiyama ,  Akihito Yamamoto ,  Hiroshi Akahori ,  Shigehiko Saida

发明人： Susumu Hiyama ,  Akihito Yamamoto ,  Hiroshi Akahori ,  Shigehiko Saida

IPC分类号： H01L21/76 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/78 ,  H01L21/336 ,  H01L29/00

CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76224 ,  H01L21/823475

摘要： A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

摘要翻译： 本发明的半导体器件包括在半导体衬底上形成的密度为2.2g / cm 3以下的氮化硅膜和在含有TEOS和O 3的环境气氛中形成在氮化硅膜上的氧化硅膜 。

公开(公告)号：US06841850B2

公开(公告)日：2005-01-11

申请号：US10235917

申请日：2002-09-06

申请人： Susumu Hiyama ,  Akihito Yamamoto ,  Hiroshi Akahori ,  Shigehiko Saida

发明人： Susumu Hiyama ,  Akihito Yamamoto ,  Hiroshi Akahori ,  Shigehiko Saida

IPC分类号： H01L21/76 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/78 ,  H01L23/58

CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76224 ,  H01L21/823475

摘要： A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

摘要翻译： 本发明的半导体器件包括在半导体衬底上形成的密度为2.2g / cm 3以下的氮化硅膜和在含有TEOS和O 3的环境气氛中形成在氮化硅膜上的氧化硅膜 。

公开(公告)号：US06459470B1

公开(公告)日：2002-10-01

申请号：US09344498

申请日：1999-06-25

申请人： Kenji Iwano ,  Hiroshi Akahori ,  Kunio Nobori ,  Kazuhiro Kayashima ,  Makoto Fujimoto ,  Yasuhito Kawamata

发明人： Kenji Iwano ,  Hiroshi Akahori ,  Kunio Nobori ,  Kazuhiro Kayashima ,  Makoto Fujimoto ,  Yasuhito Kawamata

IPC分类号： G03B2732

CPC分类号： H04N1/00

摘要： An image printer for printing images with less cross-talk between images and less image flickering is provided. A plurality of images are interleft in one or a plurality of line units and a lenticular lens is used to make it possible for each individual pixel to be distinguished. The difference in brightness between an attentional pixel and the surrounding pixels that surround this attentional pixel is taken, and a correlation value is produced, the correlation value being reduced if the difference is large and increased if the difference is small. The image printer is equipped with a pixel shape controller that makes the printed pixels smaller in a region where the correlation value is low, and makes the printed pixels larger in a region where the correlation value is high.

摘要翻译： 提供了一种图像打印机，用于打印图像之间较少串扰的图像和较少的图像闪烁。 多个图像在一个或多个行单元中进行交织，并且使用双凸透镜来使每个单独的像素可以被区分。 拍摄注意像素与围绕该注意像素的周围像素之间的亮度差异，并且产生相关值，如果该差异较大则相关值减小，并且如果该差小则增加相关值。 图像打印机配备有像素形状控制器，其在相关值低的区域中使印刷像素更小，并且使相对于相关值高的区域中的印刷像素较大。

公开(公告)号：US5838056A

公开(公告)日：1998-11-17

申请号：US777100

申请日：1996-12-30

申请人： Yoshio Kasai ,  Takashi Suzuki ,  Takanori Tsuda ,  Yuuichi Mikata ,  Hiroshi Akahori ,  Akihito Yamamoto

发明人： Yoshio Kasai ,  Takashi Suzuki ,  Takanori Tsuda ,  Yuuichi Mikata ,  Hiroshi Akahori ,  Akihito Yamamoto

IPC分类号： H01L27/04 ,  H01L21/28 ,  H01L21/318 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L23/58

CPC分类号： H01L29/66181 ,  H01L21/28167 ,  H01L21/3185

摘要： A semiconductor wafer having an impurity diffusion layer formed in an inner surface of a trench is cleaned. The semiconductor wafer is inserted into a furnace, and NH.sub.3 gas is introduced into the furnace in the low-pressure condition to create an atmosphere in which the temperature is set at 800.degree. C. to 1200.degree. C. and the partial pressures of H.sub.2 O and O.sub.2 are set at 1.times.10.sup.-4 Torr or less. A natural oxide film formed on the inner surface of the trench is removed, and substantially at the same time, a thermal nitride film is formed on the impurity diffusion layer. Then, a CVD silicon nitride film is formed on the thermal nitride film without exposing the thermal nitride film to the outside air in the same furnace. Next, a silicon oxide film is formed on the CVD nitride film. As a result, a composite insulative film formed of the thermal nitride film, CVD silicon nitride film and silicon oxide film is obtained. Then, an electrode for the composite insulative film is formed in the trench.

摘要翻译： 清洁在沟槽的内表面形成有杂质扩散层的半导体晶片。 将半导体晶片插入炉中，并将NH 3气体在低压条件下引入炉中以产生温度设定在800℃至1200℃的气氛，并且将H 2 O和 O2设定在1×10-4乇或更低。 去除形成在沟槽内表面上的自然氧化膜，并且基本上同时在杂质扩散层上形成氮化氮膜。 然后，在氮化硅膜上形成CVD氮化硅膜，而不会在同一炉内将氮化氮膜暴露于外部空气。 接着，在CVD氮化膜上形成氧化硅膜。 结果，得到由氮化物膜，CVD氮化硅膜和氧化硅膜形成的复合绝缘膜。 然后，在沟槽中形成用于复合绝缘膜的电极。

公开(公告)号：US08895410B2

公开(公告)日：2014-11-25

申请号：US11991908

申请日：2005-09-13

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Akahori

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Akahori

IPC分类号： H01L21/322 ,  H01L21/223 ,  H01L21/30 ,  H01L29/78 ,  H01L29/66 ,  H01L21/31

CPC分类号： H01L21/3003 ,  B65G2201/0247 ,  H01L21/31 ,  H01L29/6659 ,  H01L29/7833

摘要： A cause of deteriorating the hydrogen termination on the surface of a wafer is found to be water adsorbed on the surface. By exposing the wafer to an inert gas atmosphere containing an H2 gas so as to suppress the oxidation reaction due to the water, it is possible to improve the hydrogen termination on the wafer surface.

摘要翻译： 发现晶片表面的氢终止劣化的原因是水被吸附在表面上。 通过将晶片暴露于含有H 2气体的惰性气体气氛中以抑制由于水引起的氧化反应，可以改善晶片表面上的氢终止。

公开(公告)号：US20120208375A1

公开(公告)日：2012-08-16

申请号：US13453206

申请日：2012-04-23

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

IPC分类号： H01L21/316 ,  H01L21/314

CPC分类号： H01L21/3185 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。

公开(公告)号：US20120018783A1

公开(公告)日：2012-01-26

申请号：US13117525

申请日：2011-05-27

申请人： Kazuaki Iwasawa ,  Shigeo Kondo ,  Hiroshi Akahori ,  Kiyohito Nishihara ,  Yingkang Zhang ,  Masaki Kondo ,  Hidenobu Nagashima ,  Takashi Ichikawa

发明人： Kazuaki Iwasawa ,  Shigeo Kondo ,  Hiroshi Akahori ,  Kiyohito Nishihara ,  Yingkang Zhang ,  Masaki Kondo ,  Hidenobu Nagashima ,  Takashi Ichikawa

IPC分类号： H01L29/772 ,  H01L21/28

CPC分类号： H01L29/1083 ,  H01L21/84 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/1207 ,  H01L29/66825 ,  H01L29/7881

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a first isolation groove penetrating through a conductive film serving as the gate electrode to reach the semiconductor substrate. The method can include forming a protection film covering a side wall of the first isolation groove including a side face of the gate electrode. The method can include forming a second isolation groove by etching the semiconductor substrate exposed to a bottom surface of the first isolation groove. The method can include oxidizing an inner surface of the second isolation groove provided on each of both sides of the gate electrode to form first insulating films, which are connected to each other under the gate electrode. In addition, the method can include filling an inside of the first isolation groove and an inside of the second isolation groove with a second insulating film.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 作为设置在相邻的栅电极之间的隔离槽的内壁的一部分，包括平行于设置在半导体基板上方的多个栅电极的沟道方向的侧面。 该方法可以包括形成穿过用作栅电极的导电膜的第一隔离槽，以到达半导体衬底。 该方法可以包括形成覆盖包括栅电极的侧面的第一隔离槽的侧壁的保护膜。 该方法可以包括通过蚀刻暴露于第一隔离槽的底表面的半导体衬底来形成第二隔离槽。 该方法可以包括氧化设置在栅电极的两侧的每一侧上的第二隔离槽的内表面，以形成第一绝缘膜，它们彼此连接在栅极下方。 此外，该方法可以包括用第二绝缘膜填充第一隔离槽的内部和第二隔离槽的内部。

公开(公告)号：US20120007163A1

公开(公告)日：2012-01-12

申请号：US13052531

申请日：2011-03-21

申请人： Hiroshi Akahori ,  Kiyohito Nishihara ,  Masaki Kondo ,  Yingkang Zhang ,  Shigeo Kondo ,  Hidenobu Nagashima ,  Kazuaki Iwasawa ,  Takashi Ichikawa

发明人： Hiroshi Akahori ,  Kiyohito Nishihara ,  Masaki Kondo ,  Yingkang Zhang ,  Shigeo Kondo ,  Hidenobu Nagashima ,  Kazuaki Iwasawa ,  Takashi Ichikawa

IPC分类号： H01L29/788

CPC分类号： H01L29/7883 ,  H01L27/11521

摘要： According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film.

摘要翻译： 根据一个实施例，非易失性存储器件包括衬底，第一和第二隧道绝缘膜，第一和第二浮栅电极，栅间绝缘膜和控制栅电极。 衬底具有通过元件隔离沟槽彼此隔离的第一和第二有源区。 第一和第二隧道绝缘膜分别位于第一和第二有源区中。 第一和第二浮栅电极分别位于第一和第二隧道绝缘膜上。 隔间绝缘膜包括第一绝缘材料的第一绝缘层，第一绝缘层上的第二绝缘材料的电子陷阱层和电子陷阱层上的第一绝缘材料的第二绝缘层。 控制栅电极位于隔间绝缘膜上。

公开(公告)号：US07928496B2

公开(公告)日：2011-04-19

申请号：US11808147

申请日：2007-06-07

申请人： Wakako Takeuchi ,  Hiroshi Akahori ,  Atsuhiro Sato

发明人： Wakako Takeuchi ,  Hiroshi Akahori ,  Atsuhiro Sato

IPC分类号： H01L29/788 ,  H01L29/792

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory device having high charge retention characteristics and capable of improving leakage characteristics of a dielectric film disposed between a charge storage layer and a control gate electrode, and manufacturing method thereof is disclosed. According to one aspect, there is provided a semiconductor memory device comprising a first electrode disposed on a first insulator on a semiconductor substrate, a second insulator disposed on the first electrode, a second electrode disposed on the second insulator, and diffusion layers disposed in the semiconductor substrate, wherein the second insulator including a silicon-rich silicon nitride film containing more silicon than that in a stoichiometric silicon nitride film, and a silicon oxide film formed on the silicon-rich silicon nitride film, and wherein the silicon-rich silicon nitride film has a ratio of a silicon concentration and a nitrogen concentration set to 1:0.9 to 1:1.2.

摘要翻译： 公开了一种具有高电荷保持特性并且能够改善设置在电荷存储层和控制栅电极之间的电介质膜的漏电特性的非易失性半导体存储器件及其制造方法。 根据一个方面，提供了一种半导体存储器件，包括设置在半导体衬底上的第一绝缘体上的第一电极，设置在第一电极上的第二绝缘体，设置在第二绝缘体上的第二电极和设置在第二绝缘体上的扩散层 半导体衬底，其中包括比在化学计量的氮化硅膜中含有更多的硅的富含硅的氮化硅膜的第二绝缘体和形成在富硅氮化硅膜上的氧化硅膜，并且其中富硅氮化硅 膜的硅浓度和氮浓度的比率设定为1:0.9至1:1.2。