公开(公告)号：US09076653B2

公开(公告)日：2015-07-07

申请号：US12662616

申请日：2010-04-26

申请人： Hitoshi Noguchi

发明人： Hitoshi Noguchi

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L21/02 ,  H01L29/06 ,  C30B25/18 ,  C30B25/20 ,  C30B29/02 ,  C30B29/04 ,  C30B33/06

CPC分类号： H01L21/02527 ,  C30B25/02 ,  C30B25/186 ,  C30B25/20 ,  C30B29/02 ,  C30B29/04 ,  C30B33/06 ,  H01L21/02021 ,  H01L21/02376 ,  H01L21/02491 ,  H01L21/02664 ,  H01L29/0657 ,  Y10T428/219 ,  Y10T428/24488

摘要： The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)≧50 μm. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost.

摘要翻译： 本发明是用于生长单晶金刚石层的基板，包括：至少由单晶金刚石制成的基材，以及异质外延生长在基材侧的铱膜或铑膜，其中单晶金刚石 层要生长; 其中，要生长单晶金刚石层一侧的基材的表面的外周端部以曲率半径（r）倒角，曲率半径满足（r）≥50μm。 结果，提供了用于生长单晶金刚石层的基板和用于制造单晶金刚石基板的方法，该基板和其中可以以低成本可再现地制造具有均匀和高结晶度的单晶金刚石的方法 。

公开(公告)号：US20100294196A1

公开(公告)日：2010-11-25

申请号：US12662616

申请日：2010-04-26

申请人： Hitoshi Noguchi

发明人： Hitoshi Noguchi

IPC分类号： C30B25/20 ,  B32B3/02

CPC分类号： H01L21/02527 ,  C30B25/02 ,  C30B25/186 ,  C30B25/20 ,  C30B29/02 ,  C30B29/04 ,  C30B33/06 ,  H01L21/02021 ,  H01L21/02376 ,  H01L21/02491 ,  H01L21/02664 ,  H01L29/0657 ,  Y10T428/219 ,  Y10T428/24488

摘要： The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)≧50 μm. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost.

摘要翻译： 本发明是用于生长单晶金刚石层的基板，包括：至少由单晶金刚石制成的基材，以及异质外延生长在基材侧的铱膜或铑膜，其中单晶金刚石 层要生长; 其中，要生长单晶金刚石层一侧的基材的表面的外周端部以曲率半径（r）倒角，曲率半径满足（r）≥50μm。 结果，提供了用于生长单晶金刚石层的基板和用于制造单晶金刚石基板的方法，该基板和其中可以以低成本可再现地制造具有均匀和高结晶度的单晶金刚石的方法 。

公开(公告)号：US20090098414A1

公开(公告)日：2009-04-16

申请号：US12240406

申请日：2008-09-29

申请人： Tadahiro OOISHI ,  Kazufumi Omura ,  Hitoshi Noguchi ,  Hiroaki Takano

发明人： Tadahiro OOISHI ,  Kazufumi Omura ,  Hitoshi Noguchi ,  Hiroaki Takano

IPC分类号： G11B5/706 ,  B05D5/00

CPC分类号： G11B5/7021 ,  G11B5/7013 ,  G11B5/714 ,  G11B5/842

摘要： The present invention relates to a method of manufacturing a magnetic recording medium wherein the magnetic layer coating liquid comprising a ferromagnetic powder having an average particle size of 10 to 40 nm and a moisture content of 0.3 to 3.0 weight percent; a binder (a) comprising 0.2 to 0.7 meq/g of at least one polar group selected from the group consisting of —SO3M, —OSO3M, —PO(OM)2, —OPO(OM)2, and COOM (M denotes a hydrogen atom or the like) and having a weight average molecular weight of 20,000 to 200,000, and/or (b) comprising 0.5 to 5 meq/g of at least one polar group selected from the group consisting of —CONR1R2, —NR1R2, and —NR+R1R2R3 (wherein R1, R2, and R3 each independently denote a hydrogen atom or the like) and having a weight average molecular weight of 20,000 to 200,000; and a compound comprising at least one carboxyl group and/or hydroxyl group per molecule.

摘要翻译： 磁记录介质的制造方法技术领域本发明涉及一种制造磁记录介质的方法，其中所述磁性层涂布液含有平均粒度为10〜40nm，水分含量为0.3〜3.0重量％的铁磁性粉末; 包含0.2至0.7meq / g的至少一种选自-SO 3 M，-OSO 3 M，-PO（OM）2，-OPO（OM）2和COOM的极性基团的粘合剂（a）（M表示 氢原子等），重均分子量为20,000〜200,000，和/或（b）含有0.5〜5meq / g的至少一种极性基团，选自-CONR1R2，-NR1R2和 -NR + R1R2R3（其中R1，R2和R3各自独立地表示氢原子等），重均分子量为20,000〜200,000; 和每分子含有至少一个羧基和/或羟基的化合物。

公开(公告)号：US20090027812A1

公开(公告)日：2009-01-29

申请号：US12180580

申请日：2008-07-28

申请人： Hitoshi Noguchi ,  Yasushi Endo ,  Osamu Shimizu ,  Makoto Yoshida ,  Kazuhiko Maejima ,  Mitsuyoshi Kawai

发明人： Hitoshi Noguchi ,  Yasushi Endo ,  Osamu Shimizu ,  Makoto Yoshida ,  Kazuhiko Maejima ,  Mitsuyoshi Kawai

IPC分类号： G11B5/33

CPC分类号： G11B5/70 ,  G11B5/00826 ,  G11B5/29 ,  G11B5/3106 ,  G11B5/3906 ,  G11B5/70678 ,  G11B5/7085 ,  G11B5/71 ,  G11B5/714

摘要： The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm2, a quantity of lubricant on the magnetic layer surface, denoted as a surface lubricant index, ranges from 0.5 to 5.0, a surface abrasive occupancy of the magnetic layer ranges from 2 to 20 percent, the reproduction head is a magnetoresistive magnetic head comprising a spin-valve layer, the spin-valve layer comprises a magnetization free layer, a magnetization pinned layer and an antiferromagnetic layer, and the antiferromagnetic layer is comprised of alloy comprising iridium and manganese, and the reproduction head comes in sliding contact with the magnetic recording medium during signal reproduction.

摘要翻译： 磁信号再现系统包括磁记录介质，磁记录介质包括在非磁性载体上的铁磁性粉末和粘合剂的磁性层和再现磁头，其中在磁性层表面上高度等于或大于10nm的突起数目， 通过原子力显微镜测量的范围为50至2500 / 10,000mum2，表面润滑指数表示为磁性层表面的润滑剂的数量为0.5至5.0，磁性层的表面磨料占据率为 2〜20％，再现头是包括自旋阀层的磁阻磁头，自旋阀层包括磁化自由层，磁化钉扎层和反铁磁层，反铁磁层由包含铱的合金 和锰，并且再现头在信号再现期间与磁记录介质滑动接触。

公开(公告)号：US07070650B2

公开(公告)日：2006-07-04

申请号：US10421562

申请日：2003-04-23

申请人： Hitoshi Noguchi ,  Yoshihiro Kubota

发明人： Hitoshi Noguchi ,  Yoshihiro Kubota

IPC分类号： C30B23/00

CPC分类号： C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B29/04

摘要： There is disclosed a method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein B(OCH3)3 gas is added to the raw material gas as a source of boron to be doped, and a diamond film is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas. There can be provided a method enabling easy and uniform production of a diamond film showing a low electric resistivity value with good reproducibility and few problems concerning handling such as serious bad influence on human bodies and explosiveness during the doping process.

摘要翻译： 公开了至少通过引入原料气体，通过气相反应在基材上制备金刚石膜的方法，其中B（OCH 3 3）3气体 作为待掺杂的硼源加入到原料气体中，并且通过利用混合原料气体的气相反应将金刚石膜沉积在基材上。 可以提供一种能够容易且均匀地制造金刚石膜的方法，其具有低的电阻率值，具有良好的再现性，并且在掺杂过程中对诸如对人体的严重不良影响和爆炸性的处理问题很少。

公开(公告)号：US06465049B2

公开(公告)日：2002-10-15

申请号：US09741431

申请日：2000-12-21

申请人： Hitoshi Noguchi ,  Yoshihiro Kubota

发明人： Hitoshi Noguchi ,  Yoshihiro Kubota

IPC分类号： B05D122

CPC分类号： C23C16/274 ,  C23C16/0254

摘要： In subjecting a substrate of low electric conductivity to a pretreatment by holding the same within a fluidized bed of diamond particles for the formation of a diamond film on the substrate surface, a treatment method is disclosed which is capable of preventing decrease in the effect of the pretreatment. The pretreatment of the substrate is conducted within a fluidized bed of diamond particles by keeping the electrostatic potential of the substrate in the range from −1.5 to +1.5 kV. It is desirable that the relative humidity of the gas for the fluidization of diamond particles is controlled to be 40% or higher. It is more desirable that ion bombardment onto the substrate surface to effect neutralization of the electrostatic charges. The fluidizing gas is humidified preferably by using a bubbling apparatus or spraying apparatus.

摘要翻译： 在将低电导率的基板保持在金刚石颗粒的流化床内​​以在基板表面上形成金刚石膜的情况下进行预处理，公开了一种能够防止在基板表面上形成金刚石膜的处理方法 预处理。 通过将衬底的静电电位保持在-1.5至+ 1.5kV的范围内，在金刚石颗粒的流化床内​​进行衬底的预处理。 金属颗粒的流化气体的相对湿度优选为40％以上。 更希望离子轰击到衬底表面上以实现静电电荷的中和。 流化气体优选通过使用鼓泡装置或喷雾装置进行加湿。

公开(公告)号：US5308567A

公开(公告)日：1994-05-03

申请号：US908452

申请日：1992-07-06

申请人： Meguru Kashida ,  Yoshihiro Kubota ,  Yoshihiko Nagata ,  Hitoshi Noguchi

发明人： Meguru Kashida ,  Yoshihiro Kubota ,  Yoshihiko Nagata ,  Hitoshi Noguchi

IPC分类号： B29C41/12 ,  B29C41/28 ,  B29D7/01

CPC分类号： B29D7/01 ,  B29C41/28

摘要： A method is proposed for the preparation of a resin membrane suitable for use, for example, as a covering pellicle of a photolithographic mask for patterning of semiconductor devices in the electronic industry. The method comprises the steps of: (a) coating a continuous-length substrate with a solution of the resin by using a roller coater to form a coating layer of the resin solution; (b) drying the coating layer by evaporating the solvent to form a dry resin film on the substrate surface; and (c) peeling the resin film from the surface of the substrate, preferably, in water.

摘要翻译： 提出了一种用于制备适用于电子工业中用于图案化半导体器件的光刻掩模的覆盖薄膜的树脂膜的方法。 该方法包括以下步骤：（a）使用辊式涂布机用树脂溶液涂布连续长度的基材以形成树脂溶液的涂层; （b）通过蒸发溶剂干燥涂层以在基材表面上形成干树脂膜; 和（c）优选在水中从树脂膜的表面剥离树脂膜。

公开(公告)号：US5199055A

公开(公告)日：1993-03-30

申请号：US908330

申请日：1992-07-06

申请人： Hitoshi Noguchi ,  Yoshihiko Nagata ,  Meguru Kashida ,  Yoshihiro Kubota

发明人： Hitoshi Noguchi ,  Yoshihiko Nagata ,  Meguru Kashida ,  Yoshihiro Kubota

IPC分类号： G03F1/22 ,  G03F7/20 ,  G21K1/06 ,  H01L21/027

CPC分类号： G03F1/22 ,  G03F7/70866 ,  G21K1/06

摘要： Proposed is a high-precision X-ray lithographic mask blank with reinforcement free from warping or distortion. The mask blank is an integral body comprising: (a) a frame made from a silicon wafer; (b) a membrane of an X-ray permeable material such as silicon carbide adhering to and supported by one surface of the frame; and (c) a reinforcing member made from a single crystal of silicon adhesively bonded to the other surface of the frame with (d) a layer of silicon oxide intervening between the frame and the reinforcing member. The mask blank can be prepared in a process of first forming a layer of silicon oxide on the surface of the silicon wafer and/or reinforcing member prior to deposition of the X-ray permeable film on the silicon wafer and heating them together at a temperature of 800.degree. C. or lower while they are in direct contact with each other with the silicon oxide layer intervening therebetween.

摘要翻译： 提出了一种高精度的X光平版印刷掩模，无需翘曲或变形。 掩模坯料是一体的主体，其包括：（a）由硅晶片制成的框架; （b）附着在框架的一个表面并由其支撑的诸如碳化硅的X射线透过材料的膜; 和（c）由硅的单晶制成的加强构件，其与（d）介于框架和加强构件之间的氧化硅层粘合地结合到框架的另一个表面。 掩模坯料可以在将X射线透过膜沉积在硅晶片上之前首先在硅晶片和/或加强元件的表面上形成氧化硅层的过程中制备，并在温度 800℃以下，同时它们彼此直接接触，其间介于其间的氧化硅层。

公开(公告)号：US5139633A

公开(公告)日：1992-08-18

申请号：US729450

申请日：1991-07-12

申请人： Meguru Kashida ,  Yoshihiko Nagata ,  Hitoshi Noguchi

发明人： Meguru Kashida ,  Yoshihiko Nagata ,  Hitoshi Noguchi

IPC分类号： C23C14/56 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34 ,  H01L21/203 ,  H01L21/31 ,  H01L21/3205

CPC分类号： H01J37/347 ,  C23C14/34 ,  H01J37/34

摘要： In a process for the deposition of a film of an inorganic substance such as silicon carbide on the surface of a substrate such as a silicon wafer by the method of sputtering, as in the process for the preparation of a membrane to serve as an X-ray lithographic mask, using a target disc and a substrate disc held in parallel to each other, uniformity in the internal stress of the deposited film can be improved by displacing the target or the substrate relative to each other during the sputtering procedure in the direction parallel to the surface of the target or substrate in a distance of at least 1 mm.

公开(公告)号：US3947760A

公开(公告)日：1976-03-30

申请号：US538496

申请日：1975-01-03

申请人： Hitoshi Noguchi ,  Kohichi Maeda ,  Takeshi Kyo

发明人： Hitoshi Noguchi ,  Kohichi Maeda ,  Takeshi Kyo

IPC分类号： G01R27/02 ,  H03M1/00 ,  G01R27/00

CPC分类号： G01R27/02 ,  H03M1/52

摘要： A method and means for measuring the electric properties of capacitor, inductor and resistor elements is described. The element to be measured and a reference element are connected in series, and standard A.C. voltage is applied to one end of the series circuit whereas a variable voltage is applied to the other end of said circuit. The variable voltage is controlled in order to zero the voltage or the current at the common junction of both the element to be measured and the reference element. Said standard voltage and said variable voltage are rectified, and the generated D.C. signals are used for charging integrator capacitors. These capacitors are then discharged and the ratio of charging and discharging time is a measure of the resistance, capacitance and inductance, respectively, of the unknown element. Dielectric and magnetic dissipation factors may be measured in a similar manner.

摘要翻译： 描述了用于测量电容器，电感器和电阻器元件的电特性的方法和装置。 要测量的元件和参考元件串联连接，并且将标准交流电压施加到串联电路的一端，而可变电压被施加到所述电路的另一端。 控制可变电压以便将要测量的元件和参考元件的公共接点处的电压或电流归零。 所述标准电压和所述可变电压被整流，所产生的直流信号用于对积分电容器进行充电。 然后，这些电容器被放电，并且充电和放电时间的比率分别是未知元件的电阻，电容和电感的量度。 可以以类似的方式测量电介质和磁损耗因子。