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145 条记录 (耗时 0.039 秒)

    Method for displaying screen image on mobile terminal
    44.
    发明申请
    Method for displaying screen image on mobile terminal 有权
    在移动终端上显示屏幕图像的方法

    公开(公告)号：US20050280660A1

    公开(公告)日：2005-12-22

    申请号：US11117718

    申请日：2005-04-29

    申请人： Jeong-Wook Seo ,  Jae-Ho Kim ,  Eun-Jung Seo ,  Yang-Hyun Lee ,  Hae-Young Park ,  Wei-Jin Park

    发明人： Jeong-Wook Seo ,  Jae-Ho Kim ,  Eun-Jung Seo ,  Yang-Hyun Lee ,  Hae-Young Park ,  Wei-Jin Park

    IPC分类号： H04M1/57 ,  H04M1/725 ,  G06T11/00

    CPC分类号： H04M1/72544

    摘要： A mobile terminal that is capable of displaying a screen image during a specific state, which includes a character memory for storing character images and a screen image created by a combination of the character images and which is displayable during the specific state of the mobile terminal. The mobile terminal further includes a controller for controlling the display of the screen image, and a display unit for displaying the screen image. When an event occurs in the mobile terminal, the controller further processes the event and changes the display data of the screen image according to the event processing result, and displays the changed screen image during the specific state of the mobile terminal.

    摘要翻译： 能够在特定状态下显示屏幕图像的移动终端，其包括用于存储字符图像的字符存储器和通过字符图像的组合创建并且可以在移动终端的特定状态期间可显示的屏幕图像。 移动终端还包括用于控制屏幕图像的显示的控制器和用于显示屏幕图像的显示单元。 当在移动终端中发生事件时，控制器进一步处理事件并根据事件处理结果改变屏幕图像的显示数据，并且在移动终端的特定状态期间显示改变的屏幕图像。

    VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    46.
    发明申请
    VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
    垂直存储器件及其制造方法

    公开(公告)号：US20150115345A1

    公开(公告)日：2015-04-30

    申请号：US14519285

    申请日：2014-10-21

    申请人： Etienne Nowak ,  Dae-Sin Kim ,  Hye-Young Kwon ,  Jae-Ho Kim ,  Jin-Woo Park ,  Ji-Woong Sue

    发明人： Etienne Nowak ,  Dae-Sin Kim ,  Hye-Young Kwon ,  Jae-Ho Kim ,  Jin-Woo Park ,  Ji-Woong Sue

    IPC分类号： H01L27/115 ,  H01L21/31

    CPC分类号： H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

    摘要： A vertical memory device includes a channel, a conductive pattern, gate electrodes, a bit line and a conductive line. A plurality of the channels and the conductive patterns extend in a vertical direction from a top surface of a substrate. The gate electrodes surround outer sidewalls of the channels and the conductive patterns. The gate electrodes are stacked in the vertical direction to be spaced apart from each other. The bit line is electrically connected to the channels. The conductive line is electrically connected to the conductive patterns.

    摘要翻译： 垂直存储器件包括通道，导电图案，栅电极，位线和导线。 多个通道和导电图案从衬底的顶表面沿垂直方向延伸。 栅电极围绕通道的外侧壁和导电图案。 栅电极在垂直方向上堆叠以彼此间隔开。 位线电连接到通道。 导线与导电图形电连接。

    Method of designing nonvolatile memory device
    47.
    发明授权
    Method of designing nonvolatile memory device 有权
    设计非易失性存储器件的方法

    公开(公告)号：US08627257B2

    公开(公告)日：2014-01-07

    申请号：US13570498

    申请日：2012-08-09

    申请人： Jae-Ho Kim ,  Dae-Sin Kim ,  Hyun-Jae Kim ,  Young-Gu Kim

    发明人： Jae-Ho Kim ,  Dae-Sin Kim ,  Hyun-Jae Kim ,  Young-Gu Kim

    IPC分类号： G06F17/50

    CPC分类号： G06F12/0246 ,  G06F2212/7206

    摘要： In a computer-implemented method of designing a nonvolatile memory device, first parameters associated with external environmental conditions are set. Second parameters associated with structural characteristics and internal environmental conditions are set. A first initial operation condition associated with an erase operation is determined based on the first and second parameters. A second initial operation condition associated with a program operation is determined based on the first and second parameters and the first initial operation condition. A final operation condition associated with reliability is determined based on the first and second parameters, and the first and second initial operation condition.

    摘要翻译： 在设计非易失性存储器件的计算机实现方法中，设置与外部环境条件相关联的第一参数。 设定与结构特征和内部环境条件相关的第二参数。 基于第一和第二参数确定与擦除操作相关联的第一初始操作条件。 基于第一和第二参数和第一初始操作条件来确定与程序操作相关联的第二初始操作条件。 基于第一和第二参数以及第一和第二初始操作条件来确定与可靠性相关联的最终操作条件。

    Methods of manufacturing semiconductor devices using photolithography
    48.
    发明授权
    Methods of manufacturing semiconductor devices using photolithography 有权
    使用光刻制造半导体器件的方法

    公开(公告)号：US08551689B2

    公开(公告)日：2013-10-08

    申请号：US13117667

    申请日：2011-05-27

    申请人： Mi-Ra Park ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Mi-Ra Park ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/40

    摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

    摘要翻译： 使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。 可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。 可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。 可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。 这里，第二开口可以比第一开口窄得多。