公开(公告)号：US20220399307A1

公开(公告)日：2022-12-15

申请号：US17344681

申请日：2021-06-10

申请人： Intel Corporation

发明人： Brandon C. Marin ,  Sai Vadlamani ,  Omkar Karhade ,  Tolga Acikalin

IPC分类号： H01L25/065 ,  H01L23/538 ,  H01L23/64

摘要： An electronic substrate may be fabricated having a core comprising a laminate including a metal layer between a first insulator layer and a second insulator layer, a metal via through the core, and metallization features on a first side and a second side of the core, wherein first ones of the metallization features are embedded within dielectric material on the first side of the core, and wherein a sidewall of the dielectric material and of the first insulator layer defines a recess over an area of the metal layer. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board. Other embodiments are disclosed and claimed.

公开(公告)号：US11335632B2

公开(公告)日：2022-05-17

申请号：US15857238

申请日：2017-12-28

申请人： Intel Corporation

发明人： Prithwish Chatterjee ,  Junnan Zhao ,  Sai Vadlamani ,  Ying Wang ,  Rahul Jain ,  Andrew J. Brown ,  Lauren A. Link ,  Cheng Xu ,  Sheng C. Li

IPC分类号： H01L27/28 ,  H01L23/498 ,  H01L21/48 ,  H01F27/28 ,  H01F41/04 ,  H01L25/16 ,  H01L23/00

摘要： Methods/structures of forming in-package inductor structures are described. Embodiments include a substrate including a dielectric material, the substrate having a first side and a second side. A conductive trace is located within the dielectric material. A first layer is on a first side of the conductive trace, wherein the first layer comprises an electroplated magnetic material, and wherein a sidewall of the first layer is adjacent the dielectric material. A second layer is on a second side of the conductive trace, wherein the second layer comprises the electroplated magnetic material, and wherein a sidewall of the second layer is adjacent the dielectric material.

公开(公告)号：US20220130748A1

公开(公告)日：2022-04-28

申请号：US17567639

申请日：2022-01-03

申请人： INTEL CORPORATION

发明人： Sai Vadlamani ,  Prithwish Chatterjee ,  Robert A. May ,  Rahul S. Jain ,  Lauren A. Link ,  Andrew J. Brown ,  Kyu Oh Lee ,  Sheng C. Li

IPC分类号： H01L23/498 ,  H01F17/00 ,  H01F41/04 ,  H05K1/00 ,  H01L23/00 ,  H01F27/28 ,  H01F27/40 ,  H01L21/48

摘要： Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.

公开(公告)号：US11289263B2

公开(公告)日：2022-03-29

申请号：US15854460

申请日：2017-12-26

申请人： INTEL CORPORATION

发明人： Sai Vadlamani ,  Prithwish Chatterjee ,  Lauren A. Link ,  Andrew J. Brown

IPC分类号： H01F27/28 ,  H01L23/522 ,  H01L49/02 ,  H01L23/538 ,  H01F17/00 ,  H01L21/768

摘要： An electronic structure may be fabricated comprising an electronic substrate having at least one photo-imageable dielectric layer and an inductor embedded in the electronic substrate, wherein the inductor comprises a magnetic material layer disposed within a via formed in the at least one photo-imageable dielectric layer and an electrically conductive via extending through the magnetic material layer. The electronic structure may further include an integrated circuit device attached to the electronic substrate and the electronic substrate may further be attached to a board, such as a motherboard.

公开(公告)号：US11158558B2

公开(公告)日：2021-10-26

申请号：US16464547

申请日：2016-12-29

申请人： INTEL CORPORATION

发明人： Rahul Jain ,  Kyu Oh Lee ,  Siddharth K. Alur ,  Wei-Lun K. Jen ,  Vipul V. Mehta ,  Ashish Dhall ,  Sri Chaitra J. Chavali ,  Rahul N. Manepalli ,  Amruthavalli P. Alur ,  Sai Vadlamani

IPC分类号： H01L23/48 ,  H01L21/00 ,  H01L21/44 ,  H05K7/00 ,  H01R9/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L23/532 ,  H01L23/498

摘要： An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.

公开(公告)号：US10971492B2

公开(公告)日：2021-04-06

申请号：US16855376

申请日：2020-04-22

申请人： Intel Corporation

发明人： Cheng Xu ,  Rahul Jain ,  Seo Young Kim ,  Kyu Oh Lee ,  Ji Yong Park ,  Sai Vadlamani ,  Junnan Zhao

IPC分类号： H01L27/07 ,  H01L23/64 ,  H01L23/522 ,  H01L23/00 ,  H01L49/02

摘要： Disclosed embodiments include an embedded thin-film capacitor and a magnetic inductor that are assembled in two adjacent build-up layers of a semiconductor package substrate. The thin-film capacitor is seated on a surface of a first of the build-up layers and the magnetic inductor is partially disposed in a recess in the adjacent build up layer. The embedded thin-film capacitor and the integral magnetic inductor are configured within a die shadow that is on a die side of the semiconductor package substrate.

公开(公告)号：US10672859B2

公开(公告)日：2020-06-02

申请号：US16020590

申请日：2018-06-27

申请人： Intel Corporation

发明人： Andrew J. Brown ,  Rahul Jain ,  Sheng Li ,  Sai Vadlamani ,  Chong Zhang

IPC分类号： H01L23/522 ,  H01L49/02 ,  H01F17/00 ,  H01L23/00

摘要： An apparatus and method of forming a magnetic inductor circuit. A substrate is provided and a first magnetic layer is formed in contact with one layer of the substrate. A conductive trace is formed in contact with the first magnetic layer. A sacrificial cooper layer protects the magnetic material from wet chemistry process steps. A conductive connection is formed from the conductive trace to the outside substrate, the conductive connection comprising a horizontal connection formed by in-layer plating. A second magnetic layer is formed in contact with the conductive trace. Instead of a horizontal connection, a vertical conductive connection can be formed that is perpendicular to the magnetic layers, by drilling a first via in a second of the magnetic layers, forming a buildup layer, and drilling a second via through the buildup layer, where the buildup layer protects the magnetic layers from wet chemistry processes.

公开(公告)号：US20200075511A1

公开(公告)日：2020-03-05

申请号：US16119923

申请日：2018-08-31

申请人： Intel Corporation

发明人： Andrew J. Brown ,  Rahul Jain ,  Prithwish Chatterjee ,  Lauren A. Link ,  Sai Vadlamani

IPC分类号： H01L23/64 ,  H01L23/538 ,  H01L23/00 ,  H01L21/48 ,  H01L21/683 ,  H01L21/78

摘要： A coreless semiconductor package comprises a plurality of horizontal layers of dielectric material. A magnetic inductor is situated at least partly in a first group of the plurality of layers. A plated laser stop is formed to protect the magnetic inductor against subsequent acidic processes. An EMIB is situated above the magnetic inductor within a second group of the plurality of layers. Vias and interconnections are configured within the horizontal layers to connect a die of the EMIB to other circuitry. A first level interconnect is formed on the top side of the package to connect to the interconnections. BGA pockets and BGA pads are formed on the bottom side of the package. In a second embodiment a polymer film is used as additional protection against subsequent acidic processes. The magnetic inductor comprises a plurality of copper traces encapsulated in magnetic material.

公开(公告)号：US20190393217A1

公开(公告)日：2019-12-26

申请号：US16402588

申请日：2019-05-03

申请人： Intel Corporation

发明人： Cheng Xu ,  Rahul Jain ,  Seo Young Kim ,  Kyu Oh Lee ,  Ji Yong Park ,  Sai Vadlamani ,  Junnan Zhao

IPC分类号： H01L27/07 ,  H01L49/02 ,  H01L23/64 ,  H01L23/522 ,  H01L23/00

摘要： Disclosed embodiments include an embedded thin-film capacitor and a magnetic inductor that are assembled in two adjacent build-up layers of a semiconductor package substrate. The thin-film capacitor is seated on a surface of a first of the build-up layers and the magnetic inductor is partially disposed in a recess in the adjacent build up layer. The embedded thin-film capacitor and the integral magnetic inductor are configured within a die shadow that is on a die side of the semiconductor package substrate.

公开(公告)号：US20190304661A1

公开(公告)日：2019-10-03

申请号：US15938119

申请日：2018-03-28

申请人： Intel Corporation

发明人： Cheng Xu ,  Kyu-Oh Lee ,  Junnan Zhao ,  Rahul Jain ,  Ji Yong Park ,  Sai Vadlamani ,  Seo Young Kim

IPC分类号： H01F27/28 ,  H01F27/24 ,  H01F27/02

摘要： Embodiments include an inductor that comprises an inductor trace and a magnetic body surrounding the inductor trace. In an embodiment, the magnetic body comprises a first step surface and a second step surface. Additional embodiments include an inductor that includes a barrier layer. In an embodiment, an inductor trace is formed over a first surface of the barrier layer. Embodiments include a first magnetic body over the inductor trace and the first surface of the barrier layer, and a second magnetic body over a second surface of the barrier layer opposite the first surface. In an embodiment, a width of the second magnetic body is greater than a width of the first magnetic body.