-
公开(公告)号：US09666315B2
公开(公告)日：2017-05-30
申请号：US12533605
申请日：2009-07-31
申请人： Koji Mizuguchi , Reiko Fujita , Kouki Fuse , Hitoshi Nakamura , Kazuhiro Utsunomiya , Nobuhiko Tanaka
发明人： Koji Mizuguchi , Reiko Fujita , Kouki Fuse , Hitoshi Nakamura , Kazuhiro Utsunomiya , Nobuhiko Tanaka
CPC分类号： G21C19/46 , B01D11/0434 , B01D11/0492 , B01D17/0217 , B01D17/047 , B01D17/06 , Y02W30/883
摘要： A spent nuclear fuel is reprocessed by dissolving a spent nuclear fuel in an aqueous nitric acid solution and separating and recovering nuclides contained in the resulting fuel solution by solvent extraction. A spent nuclear fuel reprocessing method includes: an electrolytic valence adjustment step in which nuclides contained in the fuel solution is electrolytically reduced without removing fission products or minor actinides until valence of plutonium is at a level at which solvent extraction efficiency is low by using the valence of plutonium contained in the fuel solution as a parameter; and a nuclide separation step in which, by using an extraction solvent which extracts uranium contained in the fuel solution, uranium is distributed from the fuel solution subjected to the electrolytic valence adjustment step to the extraction solvent.
-
公开(公告)号：US09446353B2
公开(公告)日：2016-09-20
申请号：US11705045
申请日：2007-02-12
IPC分类号： B01D53/56 , B01D53/94 , B01J23/652 , B01J35/04 , B01J37/02
CPC分类号： B01D53/945 , B01D2255/20723 , B01D2255/20776 , B01D2257/708 , B01J23/6527 , B01J35/04 , B01J37/0248 , Y02C20/10 , Y02T10/22
摘要： An object of the present invention is to provide a catalyst for treating exhaust gas adapted not only to remove CO and VOCs based on unsaturated hydrocarbons such as C2H4 but also to accelerate a decomposition reaction of saturated hydrocarbons such as propane and to provide a method for producing such a catalyst for treating exhaust gas. The present invention provides a catalyst for treating an exhaust gas containing carbon monoxide and volatile organic compounds, the catalyst comprising a substrate containing a NOx removal catalyst component and a porous inorganic compound layer containing a noble metal, the layer being applied to the substrate.
摘要翻译： 本发明的目的是提供一种用于处理废气的催化剂，其不仅适用于除去基于不饱和烃如C 2 H 4的CO和VOC，而且还用于加速饱和烃如丙烷的分解反应，并提供一种生产方法 这种用于处理废气的催化剂。 本发明提供一种用于处理含有一氧化碳和挥发性有机化合物的废气的催化剂，该催化剂包括含有除去NOx的催化剂组分的基质和含有贵金属的多孔无机化合物层，该层被施加到基材上。
-
公开(公告)号：US20140255062A1
公开(公告)日：2014-09-11
申请号：US14190631
申请日：2014-02-26
申请人： Masaya HAMAGUCHI , Hitoshi Nakamura
发明人： Masaya HAMAGUCHI , Hitoshi Nakamura
IPC分类号： G03G15/08
CPC分类号： G03G15/065
摘要： A developing device includes a developer bearer disposed facing a latent image bearer in a development range, and an alternating voltage application unit to apply alternating voltage to the developer bearer to generate an alternating electrical field in the development range to cause toner to move from the developer bearer to the latent image bearer while reciprocating therebetween. The alternating voltage has a frequency within a range from 20 kHz to 60 kHz and a peak-to-peak voltage equal to or greater than 300 V.
摘要翻译： 显影装置包括面向显影范围内的潜像载体设置的显影剂载体，以及交流电压施加单元，用于向显影剂载体施加交流电压，以在显影范围内产生交替电场，以使调色剂从显影剂 承载到潜像承载体之间。 交流电压的频率范围为20kHz至60kHz，峰峰值电压等于或大于300V。
-
公开(公告)号：US20100200619A1
公开(公告)日：2010-08-12
申请号：US12530503
申请日：2008-03-07
IPC分类号： B22D41/56
摘要： It is intended to develop a technique of pressing and fixing a plate by a uniform force to suppress the occurrence of a crack around a nozzle hole of the plate during use, and provide a sliding nozzle device capable of improving durability of the plate, and a plate for use in the sliding nozzle device. The sliding nozzle device comprises a plate (2) and a plate-receiving metal frame (1) for fixedly holding the plate (2). The plate-receiving metal frame (1) is equipped with: at least two holding members (3) each having two pressing surfaces (31, 32) consisting of a longitudinally-pressing surface and a laterally-pressing surface which are protrudingly provided thereon in spaced-apart relation to each other and each adapted to be brought into contact with a corresponding one of a plurality of side surfaces of the plate (2), wherein the holding members (3) are symmetrically arranged with respect to a longitudinal axis of the plate-receiving metal frame (1); a movable block (6) rotatably supporting the holding members (3); and pressing means adapted to press the movable block (6) toward the plate. An angle between the longitudinally-pressing surface (31) and the longitudinal axis of the plate-receiving metal frame (1) is set in the range of 60 to 90 degrees, and an angle between the laterally-pressing surface (32) and the longitudinal axis of the plate-receiving metal frame (1) is set in the range of 1 to 30 degrees.
摘要翻译： 旨在开发一种通过均匀的力来压制和固定板的技术，以抑制在使用期间在板的喷嘴孔周围发生裂纹，并且提供能够提高板的耐久性的滑动喷嘴装置，以及 用于滑动喷嘴装置的板。 滑动喷嘴装置包括用于固定地保持板（2）的板（2）和板接收金属框架（1）。 板接收金属框架（1）配备有：至少两个保持构件（3），每个保持构件（3）具有两个挤压表面（31,32），其包括突出地设置在其上的纵向按压表面和侧向按压表面 彼此间隔开的关系，并且各自适于与所述板（2）的多个侧表面中的对应的一个相接触，其中所述保持构件（3）相对于所述板的纵向轴线对称地布置 板接收金属框架（1）; 可移动地支撑所述保持构件（3）的可动块（6）。 以及适于将可移动块（6）朝向板压的按压装置。 纵向按压面（31）与板接收金属框架（1）的纵向轴线之间的角度设定在60度至90度的范围内，并且横向按压表面（32）和 板接收金属框架（1）的纵向轴线设定在1至30度的范围内。
-
公开(公告)号：US07738521B2
公开(公告)日：2010-06-15
申请号：US11606186
申请日：2006-11-30
申请人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
发明人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18369 , H01S5/2009 , H01S5/221 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.
摘要翻译： 超晶格结构用于自对准结构的激光器件的一部分，通过利用层中的电流的延伸来降低器件的电阻，注意高密度的横向传导的事实 在超晶格结构中的掺杂对于降低激光器的电阻是有效的，以便降低操作电压并增加难以获得具有高载流子密度的晶体的氮化物型宽间隙半导体器件的功率，并且器件电阻 高。
-
公开(公告)号：USRE41336E1
公开(公告)日：2010-05-18
申请号：US10334709
申请日：2003-01-02
申请人： Masahiko Kondow , Kazuhisa Uomi , Hitoshi Nakamura
发明人： Masahiko Kondow , Kazuhisa Uomi , Hitoshi Nakamura
CPC分类号： H01L33/30 , B82Y20/00 , H01L21/02381 , H01L21/02392 , H01L21/02458 , H01L21/02461 , H01L21/02507 , H01L21/02538 , H01L21/0262 , H01L27/0605 , H01L27/1446 , H01L27/15 , H01L31/03048 , H01L31/107 , H01L31/125 , H01L33/007 , H01S5/021 , H01S5/32366 , H01S5/32375 , H01S5/3434 , Y02E10/544
摘要： A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor AlaGabIn1-a-bNxPyAszSb1-x-y-z (0≦a≦1, 0≦b≦1, 0
摘要翻译： 一种包括多个半导体层的半导体器件的制造方法，所述多个半导体层至少包括含氮合金半导体AlaGabIn1-a-bNxPyAszSb1-xyz（0＆amp; nlE; a＆nlE; 1,0＆amp; nlE; b＆nlE; x <1,0
-
公开(公告)号：US07718454B2
公开(公告)日：2010-05-18
申请号：US12029510
申请日：2008-02-12
申请人： Hitoshi Nakamura , Shinji Abe , Harumi Nishiguchi
发明人： Hitoshi Nakamura , Shinji Abe , Harumi Nishiguchi
IPC分类号： H01L21/00
CPC分类号： H01S5/0201 , H01L23/544 , H01L24/45 , H01L24/48 , H01L2223/54453 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2924/01013 , H01L2924/01014 , H01L2924/01079 , H01L2924/1033 , H01S5/0202 , H01S5/22 , H01S5/2214 , H01S5/32341 , H01L2924/00014
摘要： A method of manufacturing semiconductor laser device including a GaN wafer includes forming a semiconductor layer on the GaN wafer and on which ridge portions are formed. Grooves are formed in the semiconductor layer such that each groove is disposed in line with the scribe marks, between each of the ridge portions and an upstream scribe mark. The grooves are curved and convex outwardly towards a downstream side, and each groove has an apex on a cleavage line. The side extending from the apex preferably does not form an angle of 60 degrees with respect to a cleavage direction or the cleavage line.
摘要翻译： 制造包括GaN晶片的半导体激光器件的方法包括在GaN晶片上形成半导体层并形成脊部。 在半导体层中形成凹槽，使得每个凹槽与每个脊部之间的刻划线和上游划线标记配置。 凹槽向下游侧弯曲并向外凸出，并且每个凹槽在切割线上具有顶点。 从顶点延伸的一侧优选不相对于切割方向或切割线形成60度的角度。
-
48.发明申请公开(公告)号：US20100038249A1
公开(公告)日：2010-02-18
申请号：US12533605
申请日：2009-07-31
申请人： Koji Mizuguchi , Reiko Fujita , Kouki Fuse , Hitoshi Nakamura , Kazuhiro Utsunomiya , Nobuhiko Tanaka
发明人： Koji Mizuguchi , Reiko Fujita , Kouki Fuse , Hitoshi Nakamura , Kazuhiro Utsunomiya , Nobuhiko Tanaka
CPC分类号： G21C19/46 , B01D11/0434 , B01D11/0492 , B01D17/0217 , B01D17/047 , B01D17/06 , Y02W30/883
摘要： A spent nuclear fuel is reprocessed by dissolving a spent nuclear fuel in an aqueous nitric acid solution and separating and recovering nuclides contained in the resulting fuel solution by solvent extraction. A spent nuclear fuel reprocessing method includes: an electrolytic valence adjustment step in which nuclides contained in the fuel solution is electrolytically reduced without removing fission products or minor actinides until valence of plutonium is at a level at which solvent extraction efficiency is low by using the valence of plutonium contained in the fuel solution as a parameter; and a nuclide separation step in which, by using an extraction solvent which extracts uranium contained in the fuel solution, uranium is distributed from the fuel solution subjected to the electrolytic valence adjustment step to the extraction solvent.
摘要翻译： 废核燃料通过将废核燃料溶解在硝酸水溶液中并通过溶剂萃取分离和回收包含在所得燃料溶液中的核素来再处理。 废核燃料后处理方法包括：电解质价调节步骤，其中包含在燃料溶液中的核素电解还原而不除去裂变产物或次要锕系元素，直到钚的价数处于使溶剂萃取效率低的水平时 燃料溶液中所含的钚作为参数; 和核素分离步骤，其中通过使用提取燃料溶液中所含的铀的提取溶剂，将铀从经过电解质量调节步骤的燃料溶液分配到萃取溶剂中。
-
公开(公告)号：US07656918B2
公开(公告)日：2010-02-02
申请号：US11688275
申请日：2007-03-20
CPC分类号： H01S5/327 , H01S5/3018 , H01S5/3216
摘要： A semiconductor laser having an n-cladding layer, an optical guide layer, an active layer, an optical guide layer, and a p-cladding layer above an InP substrate, in which the active layer has a layer constituted with Be-containing group II-VI compound semiconductor mixed crystals, and at least one of layers of the n-cladding layer, the optical guide layer, and the p-cladding layer has a layer constituted with elements identical with those of the Be-containing group II-VI compound semiconductor mixed crystals of the active layer, and the layer is constituted with a superlattice structure comprising, as a well layer, mixed crystals of a Be compositions with the fluctuation of the composition being within ±30% compared with the Be composition of the group II-VI compound semiconductor mixed crystals of the active layer, whereby the device characteristics of the semiconductor laser comprising the Be-containing group II-VI compound semiconductor matched with the InP substrate.
摘要翻译： 一种在InP衬底上方具有n包层，导光层，有源层，导光层和p包覆层的半导体激光器，其中活性层具有由含Be的基团II构成的层 -VI化合物半导体混晶，并且n包层，导光层和p包层的层中的至少一层具有由与含Be的II-VI族化合物相同的元素构成的层 活性层的半导体混合晶体，并且该层由超晶格结构构成，该超晶格结构包括与组II的Be组分相比，Be组分与组合物的波动在±30％以内的混合晶体作为阱层 -VI化合物半导体混合晶体，由此包括与InP衬底相匹配的含Be基团II-VI化合物半导体的半导体激光器的器件特性。
-
50.发明申请公开(公告)号：US20090135548A1
公开(公告)日：2009-05-28
申请号：US12224925
申请日：2007-03-08
申请人： Masaki Yoshio , Hitoshi Nakamura , Taiji Nakagawa , Yuichi Katoh
发明人： Masaki Yoshio , Hitoshi Nakamura , Taiji Nakagawa , Yuichi Katoh
摘要： The present invention provides a positive electrode for electric double layer capacitors which can improve basic characteristics, such as energy density, of electric double layer capacitors and also can improve electric double layer capacitors in useful life and stability under high temperatures. Provided is a positive electrode for electric double layer capacitors comprising as electrode active materials a carbonaceous material having a ratio of rhombohedral crystal structure to hexagonal crystal structure in crystal structure of carbon within the range of not less than 20%.
摘要翻译： 本发明提供一种能够提高双电层电容器的基本特性（例如能量密度）的双电层电容器用正极，并且可以改善使用寿命的双电层电容器和高温下的稳定性。 本发明提供一种双电层电容器用正极，其包含在不小于20％的范围内的碳的晶体结构中具有菱形晶体结构与六方晶体结构的比例的碳质材料作为电极活性物质。
-
-
-
-
-
-
-
-
-
搜索结果
231 条记录 (耗时 0.039 秒)
