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    Hetero crystalline structure and semiconductor device using it
    2.
    发明授权
    Hetero crystalline structure and semiconductor device using it 失效
    异质晶体结构和使用它的半导体器件

    公开(公告)号：US5300793A

    公开(公告)日：1994-04-05

    申请号：US63054

    申请日：1993-05-19

    申请人： Masahiko Kondow ,  Shigekazu Minagawa ,  Takashi Kajimura

    发明人： Masahiko Kondow ,  Shigekazu Minagawa ,  Takashi Kajimura

    IPC分类号： H01L29/267 ,  H01L29/04

    CPC分类号： H01L29/267

    摘要： A hetero crystalline structure consisting of semiconductor materials of a zincblende-structure and wurtzite-structure. For example, formed on a semiconductor substrate having a crystal face of (100) of the zincblende structure is a semiconductor material of the wurtzite-structure in its bulk state as a film of the same zincblende-structure as the semiconductor substrate.

    摘要翻译： 由晶体结构和纤锌矿结构的半导体材料组成的异质结构。 例如，在具有闪锌矿结构的（100）的晶面的半导体衬底上形成的是其本体状态的纤锌矿型结构的半导体材料，作为与半导体衬底相同的锌辉石结构的膜。

    SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体激光器及其制造方法

    公开(公告)号：US20090225804A1

    公开(公告)日：2009-09-10

    申请号：US12392453

    申请日：2009-02-25

    申请人： Yoshifumi Sasahata ,  Keisuke Matsumoto ,  Toshitaka Aoyagi ,  Masahiko Kondow ,  Masato Morifuji ,  Hideki Momose

    发明人： Yoshifumi Sasahata ,  Keisuke Matsumoto ,  Toshitaka Aoyagi ,  Masahiko Kondow ,  Masato Morifuji ,  Hideki Momose

    IPC分类号： H01S5/00 ,  H01L21/00

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/1203 ,  H01S5/32391 ,  H01S5/3403

    摘要： A semiconductor laser comprises an active section for generating light, and a peripheral section as resonator for producing laser light from the generated light, and includes an InP substrate. The active section has a lower cladding layer formed of AlInAs or AlGaInAs, a core layer including an active layer formed of AlGaInAs or InGaAsP, and an upper cladding layer formed of AlInAs or AlGaInAs. The peripheral section has a first cladding layer formed by oxidizing AlInAs or AlGaInAs, a core layer, and a second clad layer formed by oxidizing AlInAs or AlGaInAs, and a two-dimensional photonic crystal defined by an array of regularly spaced apart holes the peripheral section.

    摘要翻译： 半导体激光器包括用于产生光的有源部分和作为用于从所产生的光产生激光的谐振器的外围部分，并且包括InP衬底。 有源部分具有由AlInAs或AlGaInAs形成的下包层，其包括由AlGaInAs或InGaAsP形成的有源层的芯层和由AlInAs或AlGaInAs形成的上覆层。 外围部分具有通过氧化AlInAs或AlGaInAs，芯层和通过氧化AlInAs或AlGaInAs形成的第二包层形成的第一包层和由规则间隔开的孔阵列限定的二维光子晶体，周边部分 。

    Semiconductor laser, ray module using the same and ray communication system
    7.
    发明授权
    Semiconductor laser, ray module using the same and ray communication system 有权
    半导体激光器，射线模块使用相同的和射线通信系统

    公开(公告)号：US06782032B2

    公开(公告)日：2004-08-24

    申请号：US10154822

    申请日：2002-05-28

    申请人： Masahiko Kondow ,  Takeshi Kitatani ,  Makoto Kudo

    发明人： Masahiko Kondow ,  Takeshi Kitatani ,  Makoto Kudo

    IPC分类号： H01S319

    CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/0421 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/3054 ,  H01S5/32366 ,  H01S5/34306 ,  H01S2301/166

    摘要： In a semiconductor laser for emitting light perpendicular to substrate crystal, including, on the substrate crystal, an active layer for generating light, a cavity structure sandwiching the active layer by reflecting mirrors so as to obtain a laser beam from the light generated from the active layer, and a regrown semiconductor layer between the active layer and one of the reflecting mirrors, a regrown interface or a face very close to the regrown interface is formed by a thin film containing dopants of high concentration. With the configuration, an adverse influence of a contamination deposit on the regrown interface is eliminated by delta-doping the regrown interface. The cost is reduced and device resistance is also reduced to 50 &OHgr; or less. Thus, an edge emitting laser (VCSEL) for realizing a optical module achieving a high speed characteristic over 10 Gb/s is obtained.

    摘要翻译： 在用于发射与衬底晶体垂直的光的半导体激光器中，在衬底晶体上包括用于产生光的有源层，通过反射镜夹持有源层的空腔结构，以便从活性物质产生的光获得激光束 层和在有源层和一个反射镜之间的再生长半导体层，通过含有高浓度掺杂剂的薄膜形成非常接近再生界面的再生长界面或面。 通过配置，通过对再生界面的δ掺杂，消除了污染沉积物对再生界面的不利影响。 成本降低，器件电阻也降低到50欧姆以下。 因此，获得用于实现10Gb / s以上的高速特性的光模块的边缘发射激光器（VCSEL）。

    Vertical cavity surface emitting lasers, optical modules and systems
    8.
    发明授权
    Vertical cavity surface emitting lasers, optical modules and systems 失效
    垂直腔表面发射激光器，光学模块和系统

    公开(公告)号：US06697405B2

    公开(公告)日：2004-02-24

    申请号：US09785480

    申请日：2001-02-20

    申请人： Takeshi Kitatani ,  Masahiko Kondow ,  Toshiaki Tanaka

    发明人： Takeshi Kitatani ,  Masahiko Kondow ,  Toshiaki Tanaka

    IPC分类号： H01S310

    CPC分类号： H01S5/18341 ,  H01S5/02284 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/3054

    摘要： A surface emitting laser device comprising, on a semiconductor substrate, an active region for generating light, a current confinement region disposed on the side opposite to the semiconductor substrate relative to the active region, an optical cavity comprising reflectors putting the active region and the current confinement region vertically therebetween in the direction of layering the semiconductor layer, a first electrode disposed on the side of the semiconductor substrate relative to the current confinement region and a second electrode disposed on the side opposite to the semiconductor layer relative to the current confinement region, and having a layered structure capable of forming 2-dimensional carriers between the current confinement region and the second electrode, in which a current flowing from the electrode to the current confinement region has a component in the horizontal direction relative to the surface of the substrate and is conducted mainly by way of the channel for the 2-dimensional carrier gas, whereby the device resistance can be reduced greatly to provide high speed optical module using the surface emitting laser improved in the performance operating at a high speed of 10 Gb/s or more.

    摘要翻译： 一种表面发射激光器件，在半导体衬底上包括用于产生光的有源区，相对于有源区设置在与半导体衬底相对的一侧上的电流限制区，包含放置有源区和反射电流的反射器的光腔 在层叠半导体层的方向上垂直于其间的约束区域，相对于电流限制区域设置在半导体衬底侧的第一电极和相对于电流限制区域设置在与半导体层相对的一侧的第二电极， 并且具有能够在电流限制区域和第二电极之间形成2维载流子的分层结构，其中从电极流向电流限制区域的电流相对于基板的表面在水平方向上具有分量;以及 主要通过频道f进行 或二维载气，从而可以大大降低器件电阻，以提供使用在以10Gb / s以上的高速运行的性能方面得到改进的表面发射激光器的高速光学模块。

    Optoelectronic devices
    10.
    发明授权
    Optoelectronic devices 失效
    光电器件

    公开(公告)号：US5157679A

    公开(公告)日：1992-10-20

    申请号：US642006

    申请日：1991-01-16

    申请人： Masahiko Kondow ,  Toshihiro Kawano ,  Shigekazu Minagawa ,  Shin Satoh ,  Kenji Uchida ,  Toshiaki Tanaka ,  Takashi Kajimura

    发明人： Masahiko Kondow ,  Toshihiro Kawano ,  Shigekazu Minagawa ,  Shin Satoh ,  Kenji Uchida ,  Toshiaki Tanaka ,  Takashi Kajimura

    IPC分类号： H01L33/00 ,  H01L33/16 ,  H01S5/20 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323

    CPC分类号： H01L33/16 ,  H01L33/0062 ,  H01S5/32325 ,  H01S5/2059 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3202

    摘要： An optielectronic device comprising a substrate crystal whose crystal plane is a (n11) plane tilted from the (100) plane toward the [110] direction, or [110] direction where (n>1). When the substrate is applied to an AlGaInP semiconductor laser, the optical device can be cleaved into a rectangular shape, as in the case of a (100) substrate crystal, resulting in easy handling of the chips and also is effective for making the lasting wavelength shorter, lowering the threshold current density for lasing, improving the continuous lasing temperature, etc. Furthermore, semiconductor lasers of different lasing wavelengths can be prepared under good control. Furthermore, a doping efficiency having no dependence on a tilt angle can be obtained by proper selection of a dopant. For example, Si is suitable as an n-type dopant entering sites of group III atom on an (n11) A plane (n.gtoreq.2).

    摘要翻译： 一种光电装置，其包括晶体面，其晶面是从（100）面朝向[110]方向或（110）方向倾斜的（n11）面，其中（n> 1）。 当将衬底施加到AlGaInP半导体激光器时，如在（100）衬底晶体的情况下，光学器件可以被切割成矩形形状，从而易于处理芯片，并且对于使持久波长有效 更短，降低激光器的阈值电流密度，改善连续激光温度等。此外，可以在良好的控制下制备不同激光波长的半导体激光器。 此外，通过适当选择掺杂剂可以获得不依赖于倾斜角的掺杂效率。 例如，Si适合作为在（n11）A平面（n> = = 2）上进入III族原子的位置的n型掺杂剂。