公开(公告)号：US20060237752A1

公开(公告)日：2006-10-26

申请号：US11388781

申请日：2006-03-24

Applicant: John Larson ,  John Snyder

Inventor： John Larson ,  John Snyder

IPC: H01L29/80

CPC classification number: H01L21/823814 ,  H01L27/095 ,  H01L29/66643 ,  H01L29/7839

Abstract: A Schottky barrier integrated circuit is disclosed, the circuit having at least one PMOS device or at least one NMOS device, at least one of the PMOS device or NMOS device having metal source-drain contacts forming Schottky barrier or Schottky-like contacts to the semiconductor substrate. The device provides a lower capacitance between source and gate, which improves device and circuit power and speed performance.

Abstract translation: 公开了一种肖特基势垒集成电路，该电路具有至少一个PMOS器件或至少一个NMOS器件，PMOS器件或NMOS器件中的至少一个具有金属源极 - 漏极接触，形成肖特基势垒或肖特基接触到半导体 基质。 该器件在源极和栅极之间提供较低的电容，从而提高器件和电路的功率和速度性能。

公开(公告)号：US20060114080A1

公开(公告)日：2006-06-01

申请号：US11332665

申请日：2006-01-12

Applicant: John Larson

Inventor： John Larson

IPC: H04R31/00 ,  H03H9/00

CPC classification number: H03H9/587 ,  H03H9/132 ,  H03H9/584 ,  H03H9/605 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

Abstract translation: 带通滤波器具有叠层的薄膜体声共振器（FBAR）和FBAR之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电材料层。 声耦合器控制FBAR之间的声能耦合。 具体来说，声耦合器耦合FBAR之间较少的声能，而不是FBAR之间的直接接触。 减少的声耦合给出带通滤波器所需的带内和带外特性。

公开(公告)号：US07028957B1

公开(公告)日：2006-04-18

申请号：US10995637

申请日：2004-11-22

Applicant: John Larson

Inventor： John Larson

IPC: F16M11/26 ,  A47B9/00

CPC classification number: A47B13/02 ,  A47B9/10

Abstract: Easy to assemble and disassemble tables have continuous frame members with at least two tapered sockets which support table legs. The continuous frame members are identical and thus can be used interchangeably as table bases and table top supports. The center of each taper within the continuous frame member is in the same position. Tapered sockets within each frame member insure that legs inserted into those sockets are parallel to one another. The parallelity of the table legs is further enhanced by inserting the other end of the table leg into a corresponding frame member in which the tapers are identically spaced. The tables are easy to assemble by inserting the tapered table legs into the “self-holding” tapered sockets in the frame members. Easy disassembly of the tables is facilitated by quick release mechanisms which press the end of the leg seated in the socket to displace the leg from the socket.

Abstract translation: 易于组装和拆卸的桌子具有连续的框架构件，其具有支撑桌腿的至少两个锥形插座。 连续的框架构件是相同的，因此可以互换地用作桌子和台面支撑件。 连续框架构件内的每个锥形的中心处于相同的位置。 每个框架构件内的锥形插座确保插入到这些插座中的插脚彼此平行。 通过将台腿的另一端插入相应的框架构件中，使得台腿的平行性进一步增强，在该框架构件中锥形件相同间隔开。 通过将锥形台脚插入框架构件中的“自保持”锥形插座中，桌子易于组装。 通过快速释放机构来方便地拆卸桌子，该快速释放机构将座椅的端部按压在插座中以将腿从插座移位。

公开(公告)号：US20050140466A1

公开(公告)日：2005-06-30

申请号：US11069409

申请日：2005-02-28

Applicant: John Larson ,  Stephen Ellis

Inventor： John Larson ,  Stephen Ellis

IPC: H03H9/13 ,  H03H9/60 ,  H03H9/54

CPC classification number: H03H9/605 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587

Abstract: The band-pass filter has first terminals, second terminals, a first decoupled stacked bulk acoustic resonator (DSBAR), a second DSBAR, and an electrical circuit connecting the first DSBAR and the second DSBAR in series between the first terminals and the second terminals. Each DSBAR has a first film bulk acoustic resonator (FBAR), a second FBAR and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes.

Abstract translation: 带通滤波器具有第一端子，第二端子，第一解耦堆叠体声波谐振器（DSBAR），第二DSBAR和在第一端子和第二端子之间串联连接第一DSBAR和第二DSBAR的电路。 每个DSBAR具有第一薄膜体声波谐振器（FBAR），第二FBAR和FBAR之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电元件。

公开(公告)号：US20050110597A1

公开(公告)日：2005-05-26

申请号：US10969636

申请日：2004-10-19

Applicant: John Larson ,  Stephen Ellis ,  Yury Oshmyansky

Inventor： John Larson ,  Stephen Ellis ,  Yury Oshmyansky

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/58 ,  H03H9/60 ,  H03H9/56

CPC classification number: H03H9/589 ,  H03H9/02102 ,  H03H9/132 ,  H03H9/175 ,  H03H9/584 ,  H03H9/587 ,  H03H9/605

Abstract: The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.

Abstract translation: 封装膜体声波谐振器（FBAR）器件包括衬底，衬底上的FBAR堆叠，用于将FBAR堆叠与衬底声学隔离的元件，覆盖FBAR堆叠的密封剂以及覆盖FBAR堆叠的声学布拉格反射器 FBAR堆叠和密封剂。 FBAR堆叠包括FBAR并且具有远离衬底的顶表面。 FBAR包括相对的平面电极和电极之间的压电元件。 声布拉格反射器包括与金属布拉格层并列的金属布拉格层和塑性布拉格层。 金属布拉格层的金属和塑料布拉格层的塑性材料的声阻抗之间的较大比率使得布拉格反射镜能够在FBAR和密封剂之间提供足够的声学隔离，用于FBAR器件的频率响应 轻微的，如果有的话，由FBAR和密封剂之间的不良声耦合产生的伪像。

公开(公告)号：US20050106821A1

公开(公告)日：2005-05-19

申请号：US10958627

申请日：2004-10-05

Applicant: John Snyder ,  John Larson

Inventor： John Snyder ,  John Larson

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/095 ,  H01L29/10 ,  H01L29/417 ,  H01L29/47 ,  H01L29/51 ,  H01L29/78 ,  H01L31/0328

CPC classification number: H01L21/28194 ,  H01L21/26513 ,  H01L21/28167 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/823412 ,  H01L27/095 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/47 ,  H01L29/51 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66643 ,  H01L29/7839

Abstract: The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.

公开(公告)号：US20050093659A1

公开(公告)日：2005-05-05

申请号：US10965586

申请日：2004-10-13

Applicant: John Larson ,  Naghmeh Sarkeshik ,  Stephen Ellis

Inventor： John Larson ,  Naghmeh Sarkeshik ,  Stephen Ellis

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/60 ,  H03H9/56

CPC classification number: H03H9/605 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  Y10T29/42 ,  H01L2924/00014

Abstract: The film acoustically-coupled transformer (FACT) has a first and second decoupled stacked bulk acoustic resonators (DSBARs). Each DSBAR has a lower film bulk acoustic resonator (FBAR), an upper FBAR atop the lower FBAR, and an acoustic decoupler between them FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. A first electrical circuit interconnects the lowers FBAR of the first DSBAR and the second DSBAR. A second electrical circuit interconnects the upper FBARs of the first DSBAR and the second DSBAR. In at least one of the DSBARs, the acoustic decoupler and one electrode of the each of the lower FBAR and the upper FBAR adjacent the acoustic decoupler constitute a parasitic capacitor. The FACT additionally has an inductor electrically connected in parallel with the parasitic capacitor. The inductor increases the common-mode rejection ratio of the FACT.

Abstract translation: 薄膜声耦合变压器（FACT）具有第一和第二去耦堆叠体声共振器（DSBAR）。 每个DSBAR具有较低的薄膜体声波谐振器（FBAR），较低的FBAR上方的上部FBAR以及它们之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电元件。 第一电路将第一DSBAR的下降FBAR和第二DSBAR互连。 第二电路将第一DSBAR和第二DSBAR的上FBAR互连。 在至少一个DSBAR中，声耦合器和与隔声器相邻的下FBAR和上FBAR中的每一个的声解耦器和一个电极构成寄生电容器。 FACT还具有与寄生电容并联电连接的电感器。 电感增加了FACT的共模抑制比。

公开(公告)号：US20050093653A1

公开(公告)日：2005-05-05

申请号：US10699289

申请日：2003-10-30

Applicant: John Larson

Inventor： John Larson

IPC: H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H03H9/58 ,  H03H9/60

CPC classification number: H03H9/587 ,  H03H9/132 ,  H03H9/584 ,  H03H9/605 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

Abstract translation: 带通滤波器具有堆叠的一对薄膜体声共振器（FBAR）和FBAR之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电材料层。 声耦合器控制FBAR之间的声能耦合。 具体来说，声耦合器耦合FBAR之间较少的声能，而不是FBAR之间的直接接触。 减少的声耦合给出带通滤波器所需的带内和带外特性。

公开(公告)号：US20050027951A1

公开(公告)日：2005-02-03

申请号：US10928046

申请日：2004-08-27

Applicant: Gary Piccirillo ,  John MacLaren ,  Robert Lester ,  John Larson ,  Jerome Johnson ,  Benjamin Clark

Inventor： Gary Piccirillo ,  John MacLaren ,  Robert Lester ,  John Larson ,  Jerome Johnson ,  Benjamin Clark

IPC: G06F11/00 ,  G06F11/16 ,  G06F12/00

CPC classification number: G11C29/846 ,  G11C5/04 ,  G11C29/74 ,  G11C29/886 ,  G11C2029/0409 ,  G11C2029/0411

Abstract: A computer system includes a plurality of memory modules that contain semiconductor memory, such as DIMMs. The system includes a host/data controller that utilizes an XOR engine to store data and parity information in a striped fashion on the plurality of memory modules to create a redundant array of industry standard DIMMs (RAID). The host/data controller also interleaves data on a plurality of channels associated with each of the plurality of memory modules.

Abstract translation: 计算机系统包括包含半导体存储器（诸如DIMM）的多个存储器模块。 该系统包括主机/数据控制器，其利用XOR引擎以条带方式在多个存储器模块上存储数据和奇偶校验信息，以创建工业标准DIMM（RAID）的冗余阵列。 主机/数据控制器还交织与多个存储器模块中的每一个相关联的多个通道上的数据。

公开(公告)号：US20050003595A1

公开(公告)日：2005-01-06

申请号：US10893190

申请日：2004-07-16

Applicant: John Snyder ,  John Larson

Inventor： John Snyder ,  John Larson

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/417 ,  H01L29/47 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/872 ,  H01L21/338 ,  H01L29/76

CPC classification number: H01L29/0847 ,  H01L21/28194 ,  H01L21/823412 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/47 ,  H01L29/51 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66643 ,  H01L29/7839

Abstract: The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effect transistor minimizes carrier surface scattering, which enables the strained substrate to provide improved power and speed performance characteristics in this device, as compared to conventional devices.

Abstract translation: 本发明是具有应变半导体衬底和肖特基势垒源极和漏极的场效应晶体管及其制造方法。 与传统器件相比，肖特基势垒场效应晶体管的体电荷载流子传输特性使载流子表面散射最小化，这使得应变衬底能够在该器件中提供改进的功率和速度性能特性。