Resist process apparatus
    41.
    发明授权
    Resist process apparatus 失效
    抗蚀加工设备

    公开(公告)号:US5061144A

    公开(公告)日:1991-10-29

    申请号:US442535

    申请日:1989-11-28

    摘要: A resist process apparatus of the invention serves to load/unload a semiconductor wafer in/from the respective process mechanisms. The apparatus includes a wafer holding member for holding a semiconductor wafer, and X, Y, Z and .theta. driving mechanisms for conveying the wafer holding member to a resist coating mechanism and the like. The wafer holding member includes a support frame which is larger than diameter of a semiconductor wafer, and a plurality of support members, arranged on the support frame, for supporting the semiconductor wafer in partial contact with the peripheral portion of the semiconductor wafer. Since the contact area between the support members and a semiconductor wafer is small, changes in temperature of the semiconductor, when it is held, are small.

    摘要翻译: 本发明的抗蚀剂处理装置用于在各个加工机构中加载/卸载半导体晶片。 该装置包括用于保持半导体晶片的晶片保持构件和用于将晶片保持构件输送到抗蚀剂涂覆机构等的X,Y,Z和θ驱动机构。 晶片保持构件包括比半导体晶片的直径大的支撑框架和布置在支撑框架上的多个支撑构件,用于支撑半导体晶片与半导体晶片的周边部分部分接触。 由于支撑构件和半导体晶片之间的接触面积小,因此在保持时半导体的温度变化小。

    Pin for use in a workpiece clamping apparatus
    42.
    发明授权
    Pin for use in a workpiece clamping apparatus 失效
    用于工件夹紧装置的销

    公开(公告)号:US5026222A

    公开(公告)日:1991-06-25

    申请号:US490385

    申请日:1990-03-08

    IPC分类号: B23B31/10 B23B33/00 B23Q3/18

    摘要: A pin for use in a chuck for clamping a discoid portion of a workpiece, the chuck including a base, at least to fixed clamps secured on a front end surface of the base, a movable clamp adjacent to the front end surface of the base and the pin secured to the front end surface of the base. The pin is adapted to fit in a hole formed in a discoid when the discoid is mounted on the chuck wherein the hole has a larger diameter than the pin. The pin has generally rhombic transversed section with a long diagonal and a short diagonal. The pin is truncated by a predetermined amount at each end along the long diagonal to allow the workpiece to move a limited distance relative to the pin along a line formed by the short diagonal. The limited distance may be a function of an initial clearance between the discoid portion and the chuck or a function or a variation between the diameter of the discoid portion and its design diameter, or a function of both. In the preferred embodiment, the predetermined amount truncated from each end of the pin is a function of 1/2 the difference between the long diagonal and the square root of the difference between the long diagonal squared and the limited distance squared.

    Vapor cooled semiconductor device having an improved structure and
mounting assembly
    45.
    发明授权
    Vapor cooled semiconductor device having an improved structure and mounting assembly 失效
    具有改进的结构和安装组件的蒸气冷却的半导体器件

    公开(公告)号:US3996604A

    公开(公告)日:1976-12-07

    申请号:US545346

    申请日:1975-01-30

    摘要: A vapor cooled semiconductor device which comprises an envelope having at least one aperture, at least one semiconductor element enclosed therein, an electrode contacting the semiconductor element and exposed across the aperture of the envelope, an expandable diaphragm disposed through an insulator between the electrode and the wall of the envelope to seal the gap therebetween, spherical spring plates disposed outside the envelope and arranged to support the semiconductor element through the electrode under pressure, and a liquid coolant enclosed in the closed envelope, with space provided therein, whereby the semiconductor element may be cooled by the latent heat of vaporization of the liquid coolant.

    摘要翻译: 一种蒸汽冷却的半导体器件,其包括具有至少一个孔的外壳,封装在其中的至少一个半导体元件,与半导体元件接触并暴露于外壳的孔的电极,可扩张的隔膜,其设置成穿过电极和 密封其间的间隙的球形弹簧板,设置在外壳外部并且布置成在压力下支撑半导体元件通过电极,以及封闭在封闭的外壳中的液体冷却剂,其中设置有空间,由此半导体元件可以 被液体冷却剂的蒸发潜热所冷却。

    Coating/developing device and method
    47.
    发明授权
    Coating/developing device and method 有权
    涂层/显影装置及方法

    公开(公告)号:US08408158B2

    公开(公告)日:2013-04-02

    申请号:US11276662

    申请日:2006-03-09

    IPC分类号: B05C11/10 G03D15/02 G03D5/04

    摘要: A coating/developing device includes a processing block having a plurality of coating unit blocks stacked and a developing unit block stacked on the coating unit blocks. Each of the unit blocks is provided with a liquid processing unit for coating a liquid chemical on a substrate, a heating unit for heating the substrate, a cooling unit for cooling the substrate and a transfer unit for transferring the substrate between the units. The liquid processing unit is provided with a coating unit for coating a resist liquid on the substrate, a first bottom antireflection coating (BARC) forming unit for coating a liquid chemical for a BARC on the substrate before the resist liquid is coated thereon, and a second BARC forming unit for coating a liquid chemical for the BARC on the substrate after the resist liquid is coated thereon.

    摘要翻译: 涂覆/显影装置包括具有堆叠的多个涂布单元块的处理块和堆叠在涂布单元块上的显影单元块。 每个单元块设置有用于在基板上涂覆液体化学品的液体处理单元,用于加热基板的加热单元,用于冷却基板的冷却单元和用于在单元之间转移基板的转移单元。 液体处理单元设置有用于在基板上涂覆抗蚀剂液体的涂布单元,在其上涂覆抗蚀剂液体之前,在基板上涂布用于BARC的液体化学品的第一底部抗反射涂层(BARC)形成单元,以及 第二BARC形成单元,用于在其上涂覆抗蚀剂液体之后,在基板上涂覆用于BARC的液体化学品。

    Coating and developing apparatus
    48.
    发明授权
    Coating and developing apparatus 有权
    涂装显影装置

    公开(公告)号:US08302556B2

    公开(公告)日:2012-11-06

    申请号:US12855534

    申请日:2010-08-12

    IPC分类号: B05C5/02 B05C11/02

    摘要: Provided is a coating and developing apparatus composed of an assembly of plural unit blocks. A first unit-block stack and a second unit-block stack are arranged at different positions with respect to front-and-rear direction. Unit blocks for development, each of which comprises plural processing units including a developing unit that performs developing process after exposure and a transfer device that transfers a substrate among the processing units, are arranged at the lowermost level. Unit blocks for application, or coating, each of which comprises plural processing units including a coating unit that performs application process before exposure and a transfer device that transfers a substrate among the processing units, are arranged above the unit blocks for development. Unit blocks for application are arranged in both the first and second unit-block stacks. Unit blocks for application which a wafer goes through are determined depending on the layering positional relationship between an antireflective film and a resist film. An exposed wafer goes only through the unit block for development without going through any one of the unit blocks for application.

    摘要翻译: 提供一种由多个单元块组成的涂层显影装置。 第一单位块堆叠和第二单位块堆叠被布置在相对于前后方向的不同位置。 用于显影的单元块,每个包括多个处理单元,包括执行曝光之后的显影处理的显影单元和在处理单元之间传送基板的转印装置布置在最下层。 用于应用或涂布的单元块包括多个处理单元,其包括在曝光之前进行施加处理的涂覆单元和在处理单元之间传送基板的转印装置,布置在用于显影的单位块上方。 用于应用的单元块被布置在第一和第二单元块堆叠中。 根据防反射膜和抗蚀剂膜之间的层叠位置关系确定晶片通过的应用单元块。 暴露的晶片仅通过单元块进行开发,而不经过用于应用的单元块中的任何一个。

    Substrate processing method and apparatus
    49.
    发明授权
    Substrate processing method and apparatus 有权
    基板加工方法及装置

    公开(公告)号:US08231285B2

    公开(公告)日:2012-07-31

    申请号:US12610907

    申请日:2009-11-02

    IPC分类号: G03D5/00 G03B27/53

    摘要: A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

    摘要翻译: 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜,然后检查至少一个 选自以下的多个测量项目:基膜和抗蚀剂膜的反射率和膜厚度,显影后的线宽度,基底图案与抗蚀剂图案匹配的精度,显影后的表面上的缺陷等。 基于每个测量项目的对应数据(例如抗蚀剂的膜厚度和显影后的线宽度)来选择修改参数,并且修改参数。 这导致操作者的工作量减少,并且可以执行适当的修改。