公开(公告)号：US07615830B2

公开(公告)日：2009-11-10

申请号：US11252514

申请日：2005-10-18

Applicant: Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

Inventor： Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

IPC: H01L21/8238

CPC classification number: H01L21/28185 ,  H01L21/28079 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

Abstract: Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.

Abstract translation: 提供了在通道区​​域上包括多层电介质膜的晶体管。 多层电介质包括下电介质膜，该电介质膜的厚度至少为多层电介质膜的厚度的50％，并且包括金属氧化物，金属硅酸盐，铝酸盐或其混合物，以及上电介质膜 在下介电膜上，上电介质膜包含III族金属氧化物，III族金属氮化物，第ⅩⅢ族金属氧化物或第ⅩⅢ族金属氮化物。 在多层电介质膜上设置栅电极。

公开(公告)号：US20090181278A1

公开(公告)日：2009-07-16

申请号：US12261962

申请日：2008-10-30

Applicant: Ji-Won Son ,  Hae-Weon Lee ,  Ki-Bum Kim ,  Chang-Woo Kwon ,  Jong-Ho Lee ,  Hae-Ryoung Kim

Inventor： Ji-Won Son ,  Hae-Weon Lee ,  Ki-Bum Kim ,  Chang-Woo Kwon ,  Jong-Ho Lee ,  Hae-Ryoung Kim

IPC: H01M8/10 ,  C23F1/00

CPC classification number: H01M8/1286 ,  C25D11/045 ,  C25D11/24 ,  C25D11/26 ,  C25D11/30 ,  C25D11/32 ,  C25D11/34 ,  H01M4/8878 ,  Y02P70/56

Abstract: A micro cell fuel cell using a nano porous structure according to a thin film process and an anodizing process as a template for implementing a porous structure of an electrode, its fabrication method, and a micro fuel cell stack using the same are disclosed. The micro-fuel cell includes a solid electrolyte and first and second electrodes separately formed on the electrolyte, wherein at least one of the first and second electrodes is supported by a template having a plurality of nano pores formed by depositing, anodizing and etching a thin film, and is a porous electrode with nano pores formed at positions corresponding to the entirety or a portion of the plurality of nano pores formed on the template. The micro-fuel cell can be fabricated based on the thin film process, and unit cells can be highly integrated to implement a micro-fuel cell system generating a high voltage and a high current.

Abstract translation: 公开了一种使用根据薄膜工艺的纳米多孔结构和用于实现电极的多孔结构，其制造方法和使用其的微型燃料电池堆的模板的阳极氧化工艺的微电池燃料电池。 微型燃料电池包括固体电解质和分别在电解质上形成的第一和第二电极，其中第一和第二电极中的至少一个被模板支撑，该模板具有通过沉积，阳极氧化和蚀刻薄的多个纳米孔 并且是在对应于形成在模板上的多个纳米孔的整体或一部分的位置处形成的具有纳米孔的多孔电极。 微型燃料电池可以基于薄膜工艺制造，并且单元电池可以被高度集成以实现产生高电压和高电流的微型燃料电池系统。

公开(公告)号：US07547951B2

公开(公告)日：2009-06-16

申请号：US11396702

申请日：2006-04-04

Applicant: Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung ,  Yun Seok Kim ,  Min Joo Kim

Inventor： Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung ,  Yun Seok Kim ,  Min Joo Kim

IPC: H01L29/78

CPC classification number: H01L21/823807 ,  H01L21/823857

Abstract: A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate electrode may be formed on the nitrogen-incorporated active region. A first gate dielectric layer may be interposed between the nitrogen-incorporated active region and the first gate electrode. The first gate dielectric layer may include a first dielectric layer and a second dielectric layer. The second dielectric layer may be a nitrogen contained dielectric layer. A second gate electrode may be formed on the second region. A second gate dielectric layer may be interposed between the second region and the second gate electrode. The first gate dielectric layer may have the same or substantially the same thickness as the second gate dielectric layer, and the nitrogen contained dielectric layer may contact with the nitrogen-incorporated active region.

Abstract translation: 半导体器件可以包括具有第一区域和第二区域的半导体衬底。 可以在第一区域内形成含氮的有源区。 可以在引入氮的有源区上形成第一栅电极。 第一栅极电介质层可插入在引入氮的有源区和第一栅电极之间。 第一栅介质层可以包括第一介电层和第二介电层。 第二电介质层可以是含氮介电层。 第二栅极电极可以形成在第二区域上。 可以在第二区域和第二栅电极之间插入第二栅极电介质层。 第一栅极介电层可以具有与第二栅极介电层相同或基本相同的厚度，并且含氮介电层可以与引入氮的有源区接触。

公开(公告)号：US20090108358A1

公开(公告)日：2009-04-30

申请号：US11719923

申请日：2005-12-06

Applicant: Jong-Ho Lee

Inventor： Jong-Ho Lee

IPC: H01L29/78 ,  H01L27/088

CPC classification number: H01L29/7851 ,  H01L29/66621 ,  H01L29/7854

Abstract: The present invention relates to a nano-scale MOS device having a saddle structure. Particularly, the invention relates to a high-density, high-performance MOS device having a novel structure capable of improving the scaling-down characteristic and performance of the MOS device, in which a channel and gate structure is formed in the shape of a saddle. The inventive MOS device is mainly characterized in that a channel region is recessed, a gate insulating film and a gate electrode are formed on the surface and sides of the recessed channel, and the gate electrode is self-aligned with the recessed channel. Namely, in the disclosed MOS device, a portion of the insulating film around the recessed channel is selectively removed to expose the surface and sides of the recessed channel. According to the present invention, the scaling-down characteristic of the device is excellent and current drive capability is greatly increased since a channel through which an electric current can flow is formed on the surface and sides of the recessed channel. Also, the ability of the gate electrode to control the channel is enhanced. Accordingly, the invention can improve device characteristics.

Abstract translation: 本发明涉及具有鞍座结构的纳米级MOS器件。 特别地，本发明涉及一种具有能够提高MOS器件的放大特性和性能的新型结构的高密度高性能MOS器件，其中沟道和栅极结构形成为鞍形 。 本发明的MOS器件的主要特征在于沟槽区域凹陷，栅极绝缘膜和栅极电极形成在凹槽的表面和侧面上，并且栅电极与凹陷通道自对准。 也就是说，在所公开的MOS器件中，围绕凹槽的绝缘膜的一部分被选择性地去除以暴露凹槽的表面和侧面。 根据本发明，由于在凹陷通道的表面和侧面上形成有可以流过电流的通道，装置的缩小特性优异，电流驱动能力大大增加。 此外，增强了栅电极控制通道的能力。 因此，本发明可以提高装置特性。

公开(公告)号：US07333549B2

公开(公告)日：2008-02-19

申请号：US10756073

申请日：2004-01-12

Applicant: Jong-Ho Lee ,  Jae-Hak Chung ,  Chan-Soo Hwang ,  Seung-Hoon Nam ,  Do-Young Kwak ,  Jae-Choong Han ,  Seong-Cheol Kim

Inventor： Jong-Ho Lee ,  Jae-Hak Chung ,  Chan-Soo Hwang ,  Seung-Hoon Nam ,  Do-Young Kwak ,  Jae-Choong Han ,  Seong-Cheol Kim

IPC: H04L27/28

CPC classification number: H04L25/0236 ,  H04L1/0618 ,  H04L25/0212 ,  H04L27/2649

Abstract: A apparatus and method for estimating a sequence of transmitted quadrature amplitude modulation (QAM)-modulated signals and space-time block coded signals using an optimal expectation-maximization (EM)-based iterative estimation algorithm in a multiple-input and multiple-output (MIMO)-orthogonal frequency division multiplexing (OFDM) mobile communication system. An initial sequence estimation value is produced on the basis of a predetermined initial value using a pilot sub-carrier contained in each of OFDM signals received by a receiving side. A normalized value of a received signal on a channel-by-channel basis is produced by a predetermined equation using orthogonality between the OFDM signals received by the receiving side. At least one subsequent sequence estimation value is produced using the initial sequence estimation value and the normalized value of the received signal on the channel-by-channel basis. If the subsequent sequence estimation value converges to a constant value after an operation of producing the subsequent sequence estimation value is iterated the predetermined number of times, the converged subsequent sequence estimation value is designated as a final sequence estimation value.

Abstract translation: 一种用于在多输入和多输出中使用最佳期望最大化（EM）的迭代估计算法来估计发送的正交幅度调制（QAM）调制信号和时空块编码信号的序列的装置和方法 MIMO） - 正交频分复用（OFDM）移动通信系统。 使用包含在由接收侧接收的每个OFDM信号中的导频子载波，基于预定初始值产生初始序列估计值。 通过使用由接收侧接收的OFDM信号之间的正交性的预定方程式，在逐个信道的基础上产生接收信号的归一化值。 使用初始序列估计值和逐个信道的接收信号的归一化值来产生至少一个后续序列估计值。 如果后续序列估计值在产生后续序列估计值的操作被迭代预定次数之后收敛到常数值，则将收敛后续序列估计值指定为最终序列估计值。

公开(公告)号：US20070069564A1

公开(公告)日：2007-03-29

申请号：US10557609

申请日：2004-05-20

Applicant: Jong-Ho Lee

Inventor： Jong-Ho Lee

IPC: A47C7/46

CPC classification number: A47C7/40

Abstract: A system and method are presented for discovering mobile collaborators on a peer-to-peer (P2P) network. Each collaborator is identified on the P2P network by a unique ID. Each collaborator may also be identified by an identity file posted on the P2P network. Collaboration applications may include any of a variety of applications involving the exchange of information between 2 or more collaborators, such as voice over IP (VoIP). Dynamic file querying can be performed to filter the identity files most relevant to a particular peer partner. Web services are used end-to-end between P2P mobile devices and also between devices and third party service providers. Search engines use self-provisioning concepts for searches and WEB services querying. End-user devices register their personal information on P2P networks using identity self-provisioning and WEB services templates for a variety of uses, such as personal, gaming or business

Abstract translation: 提出了一种用于在对等（P2P）网络上发现移动协作者的系统和方法。 每个协作者都是通过唯一的ID在P2P网络上识别的。 每个协作者也可以通过在P2P网络上发布的身份文件来识别。 协作应用可以包括涉及2个或多个协作者之间的信息交换的各种应用中的任何一个，诸如IP语音（VoIP）。 可以执行动态文件查询来过滤与特定对等伙伴最相关的身份文件。 Web服务在P2P移动设备之间以及设备和第三方服务提供商之间端对端使用。 搜索引擎使用自供应概念进行搜索和WEB服务查询。 最终用户设备使用身份自动配置和用于各种用途的WEB服务模板（如个人，游戏或业务）在P2P网络上注册他​​们的个人信息

公开(公告)号：US20070048742A1

公开(公告)日：2007-03-01

申请号：US11211185

申请日：2005-08-23

Applicant: Jason-Jongho Kang ,  Eun-Hee Oh ,  Hyun-Woong Kang ,  Ji-Hyun Lee ,  Chang-Joon Bae ,  Jong-Ho Lee ,  Jeong-Sun Seo

Inventor： Jason-Jongho Kang ,  Eun-Hee Oh ,  Hyun-Woong Kang ,  Ji-Hyun Lee ,  Chang-Joon Bae ,  Jong-Ho Lee ,  Jeong-Sun Seo

IPC: C12Q1/68

CPC classification number: C12Q1/6883 ,  C12Q1/6837 ,  C12Q2600/156

Abstract: The present invention relates to a method of detecting a chromosome abnormality and a microarray chip for detecting a chromosome abnormality. More specifically, the present invention is directed to a method of detection for chromosome abnormality in order to easily diagnosing the health condition and disease of the subject by detecting of the chromosome abnormality rapidly and precisely, and to providing a probe for diagnosis of disease by identifying chromosome abnormality specific to the disease.

Abstract translation: 本发明涉及一种检测染色体异常的方法和用于检测染色体异常的微阵列芯片。 更具体地，本发明涉及一种检测染色体异常的方法，以便通过快速且准确地检测染色体异常来容易地诊断受试者的健康状况和疾病，并通过鉴定来提供用于诊断疾病的探针 染色体异常特异性疾病。

公开(公告)号：US20060081948A1

公开(公告)日：2006-04-20

申请号：US11252514

申请日：2005-10-18

Applicant: Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

Inventor： Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

IPC: H01L21/8238 ,  H01L29/94

CPC classification number: H01L21/28185 ,  H01L21/28079 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

Abstract: Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.

Abstract translation: 提供了在通道区​​域上包括多层电介质膜的晶体管。 多层电介质包括下电介质膜，该电介质膜的厚度至少为多层电介质膜的厚度的50％，并且包括金属氧化物，金属硅酸盐，铝酸盐或其混合物，以及上电介质膜 在下介电膜上，上电介质膜包含III族金属氧化物，III族金属氮化物，第ⅩⅢ族金属氧化物或第ⅩⅢ族金属氮化物。 在多层电介质膜上设置栅电极。

公开(公告)号：US06965293B2

公开(公告)日：2005-11-15

申请号：US10877188

申请日：2004-06-24

Applicant: Soo-An Choi ,  Jong-Ho Lee ,  Chang-Hee Choi ,  Tae-Sung Kim ,  Jun-Ku Hahn

Inventor： Soo-An Choi ,  Jong-Ho Lee ,  Chang-Hee Choi ,  Tae-Sung Kim ,  Jun-Ku Hahn

IPC: H01C1/14 ,  H01C7/02 ,  H01C7/10

CPC classification number: H01C1/1406 ,  H01C7/027

Abstract: An electrical device including a PTC conductive polymer sheet, and first and second electrodes physically contacted with opposite surfaces of the conductive polymer sheet is disclosed. The first and second electrodes have a plurality of protrusions protruded from surfaces thereof, respectively. The protrusions have an surface roughness (Rz) of 1 to 20 μm and an average width ({overscore (Rw)}) which is 0.5 to 2 times of the surface roughness (Rz), and an average gap ({overscore (Rg)}) between adjacent protrusions is 0.5 and 2 times of the surface roughness (Rz). The conductive polymer sheet has a thickness which is more than 5 times of the surface roughness (Rz).

Abstract translation: 公开了一种包括PTC导电聚合物薄片的电气装置以及与导电聚合物薄片的相对表面物理接触的第一和第二电极。 第一和第二电极分别具有从其表面突出的多个突起。 突起的表面粗糙度（Rz）为1〜20μm，平均宽度（{超芯（Rw）为表面粗糙度（Rz）的0.5〜2倍），平均间隙（{间距（Rg） 突起是表面粗糙度的0.5倍和2倍（Rz），导电性聚合物片的厚度大于表面粗糙度（Rz）的5倍。

公开(公告)号：US20050233598A1

公开(公告)日：2005-10-20

申请号：US11107559

申请日：2005-04-15

Applicant: Hyung-Suk Jung ,  Jong-Ho Lee ,  Ha-Jin Lim ,  Jae-Eun Park ,  Yun-Seok Kim ,  Jong-Ho Yang

Inventor： Hyung-Suk Jung ,  Jong-Ho Lee ,  Ha-Jin Lim ,  Jae-Eun Park ,  Yun-Seok Kim ,  Jong-Ho Yang

IPC: H01L21/31 ,  C23C16/40 ,  H01L21/28 ,  H01L21/314 ,  H01L21/336 ,  H01L21/469 ,  H01L29/51

CPC classification number: H01L21/022 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3142 ,  H01L21/3143 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.

Abstract translation: 公开了制造用于半导体应用的具有减少的杂质的高k电介质层的方法。 该方法包括以下步骤：结合对叠层电介质层执行的后处理步骤，使用ALD法形成具有形成在半导体衬底上的第一电介质层和第二电介质层的叠层电介质层。 形成堆叠的电介质层并进行后处理的步骤至少重复一次，从而制造高k电介质层。