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    Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
    41.
    发明申请
    Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process 有权
    阻止含有热酸发生剂的下层组合物，抗下层薄膜形成基材和图案化工艺

    公开(公告)号：US20100119970A1

    公开(公告)日：2010-05-13

    申请号：US12588590

    申请日：2009-10-20

    申请人： Youichi Ohsawa ,  Jun Hatakeyama ,  Takeru Watanabe ,  Takeshi Kinsho

    发明人： Youichi Ohsawa ,  Jun Hatakeyama ,  Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： G03F7/20 ,  C07C309/19 ,  C07C309/04 ,  G03F7/004

    CPC分类号： C07C381/12 ,  C07C309/12 ,  C07C2603/74 ,  C07D307/93 ,  G03F7/0045 ,  G03F7/091

    摘要： There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH2CF2SO3−H+  (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

    摘要翻译： 公开了一种抗蚀剂下层组合物，其被配置为通过在光刻中使用的多层抗蚀剂方法使用以形成低于作为抗蚀剂上层膜的光致抗蚀剂层的层，其中抗蚀剂下层组合物变得不溶或 形成下层后在碱性显影剂中难以溶解，并且其中抗蚀剂下层组合物至少包含通过在100℃的温度下加热产生由通式（1）表示的酸的热酸发生剂 ℃以上。 RCOO-CH 2 CF 2 SO 3 -H +（1）可以提供多层抗蚀剂法（特别是双层抗蚀剂法和三层抗蚀剂法）中的抗蚀剂下层组合物，该组合物用于形成 层低于作为抗蚀剂上层膜的光致抗蚀剂层，该组合物在形成下层之后在碱性显影剂中变得不溶或难溶，并且该组合物能够形成抗蚀剂下层膜，中间层膜 等具有较高的抗中毒作用并且对环境具有较低的负荷。

    Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern
    43.
    发明申请
    Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern 有权
    抵抗下层材料，抗蚀剂包含该材料的下层基材和形成图案的方法

    公开(公告)号：US20080032231A1

    公开(公告)日：2008-02-07

    申请号：US11881761

    申请日：2007-07-27

    申请人： Jun Hatakeyama ,  Toshihiko Fujii ,  Youichi Ohsawa

    发明人： Jun Hatakeyama ,  Toshihiko Fujii ,  Youichi Ohsawa

    IPC分类号： G03F1/04 ,  G03F7/20

    CPC分类号： G03F7/094 ,  Y10S430/12 ,  Y10S430/126

    摘要： Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R1CF2SO3−(R2)4N+,   (1a) as well as a resist lower layer substrate comprising a resist lower layer formed using said material.

    摘要翻译： 提供一种形成用于多层抗蚀剂工艺的抗蚀剂下层材料的方法，特别是具有从基材中和胺污染物的功能的两层抗蚀剂工艺或三层抗蚀剂工艺，从而减少了诸如 作为上层抗蚀剂的抗蚀剂图案的尾部裙边。 具体地，提供了一种用于形成化学放大光致抗蚀剂层的下层的材料，其包含可交联聚合物和热酸产生剂，其可通过在100℃以上加热而产生酸，并由通式（1a ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1＆lt; CF 2＆lt; 3＆lt; 3＆lt; （1a）＆lt; / SUP＆gt;（R＆lt; 2＆gt;）＆lt; 4＆gt; “内联式”末端=“尾”→以及包含使用所述材料形成的抗蚀剂下层的抗蚀剂下层基板。

    Onium salts, photoacid generators, resist compositions, and patterning process
    44.
    发明授权
    Onium salts, photoacid generators, resist compositions, and patterning process 有权
    鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法

    公开(公告)号：US06692893B2

    公开(公告)日：2004-02-17

    申请号：US09983155

    申请日：2001-10-23

    申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takeshi Nagata ,  Jun Hatakeyama

    发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takeshi Nagata ,  Jun Hatakeyama

    IPC分类号： G03C173

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

    摘要： Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

    摘要翻译： 芳基磺酰氧基萘磺酸盐与碘鎓或锍阳离子的鎓盐是新颖的。 包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，因为许多优点，包括改进的分辨率，改善的焦点纬度，最小化的线宽变化或甚至在长期PED下的形状退化 涂层，显影和剥离后的碎屑，以及显影后改进的图案轮廓。

    Positive resist composition and patterning process
    45.
    发明授权
    Positive resist composition and patterning process 有权
    正抗蚀剂组成和图案化工艺

    公开(公告)号：US08795942B2

    公开(公告)日：2014-08-05

    申请号：US12000284

    申请日：2007-12-11

    申请人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Ryosuke Taniguchi

    发明人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Ryosuke Taniguchi

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0397 ,  G03F7/0045

    摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).

    摘要翻译： 公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光器的高能束作为光源显着地提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。 正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。