Abstract:
A projection lens unit and a thin projector using the same are disclosed. The projection lens unit includes a plurality of lens sets for emitting light carrying an image, and a reflector arranged between adjacent ones of the lens sets or at a downstream end of the lens sets, and adapted to change a direction of light incident on the reflector.
Abstract:
A circuit board includes a plurality of differential signal line pairs, and a plurality of electromagnetic bandgap (EBG) patterns, each configured to be disposed to overlap the plurality of differential signal line pairs, wherein the EBG patterns are electrically insulated from the differential signal line pairs.
Abstract:
A thin projector is disclosed. The thin projector includes a housing having an upright panel shape, an illumination unit arranged in the interior of the housing, the illumination unit generating light and emitting the generated light, a micro device arranged in the interior of the housing, the micro device receiving the light from the illumination unit and producing an image using the received light, and a projection lens unit arranged in the interior of the housing, the projection lens unit including an emission unit adapted to externally emit the image produced by the micro device and arranged to be externally exposed through a front side of the housing.
Abstract:
Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.
Abstract:
A method of operating a wearable watch includes recognizing a predetermined gesture including pitching or rolling, setting a yaw reference value when recognizing the predetermined gesture and compensating a display orientation according to a change in yaw data corresponding to yawing from the yaw reference value to uniformly keep a target shape according a gaze direction of a user.
Abstract:
A conductive paste including a conductive powder, a metallic glass, and an organic vehicle, wherein the metallic glass has a resistivity that is decreased when the metallic glass is heat treated at a temperature that is higher than a glass transition temperature of the metallic glass.
Abstract:
A semiconductor integrated circuit includes a first voltage line to which a first ground voltage is applied, a second voltage line to which a second ground voltage is applied, a third voltage line to which a first power supply voltage is applied, and a coupling unit including a MOS transistor having a source coupled to the first voltage line, a drain coupled to the second voltage line, and a gate coupled to the third voltage line.
Abstract:
According to an example embodiment a method of plating resin using a graphene thin layer includes forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer fog on the resin substrate.
Abstract:
Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.
Abstract:
Disclosed is an AC type plasma display panel for back light of liquid crystal display device. The disclosed comprises a rear substrate and a front substrate arranged opposite to each other with a predetermined distance; seal paste for sealing the edges of the substrates; a pair of discharge electrodes interposed between the rear substrate and the front substrate, having a plurality of holes and separated with a predetermined distance in a state of no contact with the substrates; and a plurality of spacers interposed between the rear substrate and discharge electrodes and between the front substrate and discharge electrodes in order to maintain distances.