Thin projector
    43.
    发明授权
    Thin projector 有权
    薄投影机

    公开(公告)号:US07540618B2

    公开(公告)日:2009-06-02

    申请号:US11305103

    申请日:2005-12-19

    CPC classification number: H04N9/3141 G02B13/16 H04N5/7416 H04N9/3111 H04N9/317

    Abstract: A thin projector is disclosed. The thin projector includes a housing having an upright panel shape, an illumination unit arranged in the interior of the housing, the illumination unit generating light and emitting the generated light, a micro device arranged in the interior of the housing, the micro device receiving the light from the illumination unit and producing an image using the received light, and a projection lens unit arranged in the interior of the housing, the projection lens unit including an emission unit adapted to externally emit the image produced by the micro device and arranged to be externally exposed through a front side of the housing.

    Abstract translation: 公开了一种薄型投影仪。 薄型投影仪包括具有直立面板形状的壳体,布置在壳体内部的照明单元,照明单元产生光并发射生成的光,布置在壳体内部的微型装置,微型装置接收 来自照明单元的光并且使用所接收的光产生图像,以及布置在壳体内部的投影透镜单元,所述投影透镜单元包括适于外部发射由微型装置产生的图像并被布置为 通过外壳的前侧外露。

    Semiconductor integrated circuit
    47.
    发明授权
    Semiconductor integrated circuit 失效
    半导体集成电路

    公开(公告)号:US08421528B2

    公开(公告)日:2013-04-16

    申请号:US13097326

    申请日:2011-04-29

    CPC classification number: H01L23/5286 H01L2924/0002 H01L2924/00

    Abstract: A semiconductor integrated circuit includes a first voltage line to which a first ground voltage is applied, a second voltage line to which a second ground voltage is applied, a third voltage line to which a first power supply voltage is applied, and a coupling unit including a MOS transistor having a source coupled to the first voltage line, a drain coupled to the second voltage line, and a gate coupled to the third voltage line.

    Abstract translation: 半导体集成电路包括施加第一接地电压的第一电压线,施加第二接地电压的第二电压线,施加第一电源电压的第三电压线,以及包括 MOS晶体管,其具有耦合到第一电压线的源极,耦合到第二电压线的漏极和耦合到第三电压线的栅极。

    Method for forming polycrystalline silicon film
    49.
    发明授权
    Method for forming polycrystalline silicon film 有权
    形成多晶硅膜的方法

    公开(公告)号:US07008863B2

    公开(公告)日:2006-03-07

    申请号:US10934153

    申请日:2004-09-03

    CPC classification number: H01L21/0268 B23K26/066 H01L21/02686 H01L21/2026

    Abstract: Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.

    Abstract translation: 公开了通过使非晶硅膜结晶来形成多晶硅膜的方法。 掩模具有具有相同长度的第一至第三射击区域。 第一到第三射击区域具有交替对准的透射部分和非透射部分。 第一拍摄区域的发送部分对应于第二拍摄区域的非发送部分定位,第一拍摄区域的非透射部分对应于第二拍摄区域的发射部分定位,并且发射部分 对应于第一和第二射击区域的透射部分的中心部分对齐。 对玻璃基板进行初级至第n次激光照射处理,从而使非晶硅膜结晶成多晶硅膜。

    AC type plasma display panel for back light of liquid crystal display device

    公开(公告)号:US06563266B2

    公开(公告)日:2003-05-13

    申请号:US09993000

    申请日:2001-11-06

    CPC classification number: H01J11/00 H01J2211/22 H01J2211/361

    Abstract: Disclosed is an AC type plasma display panel for back light of liquid crystal display device. The disclosed comprises a rear substrate and a front substrate arranged opposite to each other with a predetermined distance; seal paste for sealing the edges of the substrates; a pair of discharge electrodes interposed between the rear substrate and the front substrate, having a plurality of holes and separated with a predetermined distance in a state of no contact with the substrates; and a plurality of spacers interposed between the rear substrate and discharge electrodes and between the front substrate and discharge electrodes in order to maintain distances.

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