Semiconductor device
    49.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08816410B2

    公开(公告)日:2014-08-26

    申请号:US13357381

    申请日:2012-01-24

    IPC分类号: H01L29/772

    摘要: A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

    摘要翻译: 实施例的第一半导体器件包括第一导电类型的第一半导体层,第一控制电极,引出电极,第二控制电极和第三控制电极。 第一控制电极通过第一绝缘膜面对第一导电类型的第二半导体层,第二导电类型的第三半导体层和第一导电类型的第四半导体层。 第二控制电极和第三控制电极通过第二绝缘膜电连接到引出电极,并且与提取电极下方的第二半导体层相对。 第二控制电极和整个第三控制电极的至少一部分设置在引出电极的下方。 第二控制电极的电阻高于第三控制电极的电阻。

    Power semiconductor device
    50.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号:US08592893B2

    公开(公告)日:2013-11-26

    申请号:US13052893

    申请日:2011-03-21

    IPC分类号: H01L29/66

    摘要: According to one embodiment, a power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type, a fourth semiconductor layer, a fifth semiconductor layer, a first and second main electrode, a first and second insulating film and a control electrode. The second and third layers are provided periodically on the first layer. The fourth layer is provided on the third layer. The fifth layer is selectively provided on the fourth layer. The first film is provided on sidewalls of a trench that reaches from a surface of the fifth layer to the second layer. The second film is provided closer to a bottom side of the trench than the first film and has a higher permittivity than the first film. The control electrode is embedded in the trench.

    摘要翻译: 根据一个实施例,功率半导体器件包括第一导电类型的第一半导体层,第一导电类型的第二半导体层和第二导电类型的第三半导体层,第四半导体层,第五半导体层, 第一和第二主电极,第一和第二绝缘膜和控制电极。 第二层和第三层周期性地设置在第一层上。 第四层设置在第三层上。 第五层选择性地设置在第四层上。 第一膜设置在从第五层的表面到第二层的沟槽的侧壁上。 第二膜比第一膜更靠近沟槽的底侧,并且具有比第一膜更高的介电常数。 控制电极嵌入沟槽中。