Cleaning method and polishing apparatus employing such cleaning method
    41.
    发明授权
    Cleaning method and polishing apparatus employing such cleaning method 有权
    使用这种清洁方法的清洁方法和抛光装置

    公开(公告)号:US07169235B2

    公开(公告)日:2007-01-30

    申请号:US10844317

    申请日:2004-05-13

    IPC分类号: C23G1/02

    摘要: A method is suitable for cleaning substrates, after polishing, that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The method includes polishing a substrate using an abrasive liquid containing abrasive particles, and cleaning a polished surface of the substrate by supplying a cleaning liquid having substantially the same pH as the abrasive liquid or similar pH to the abrasive liquid so that a pH of the abrasive liquid attached to the polished surface of the substrate is not rapidly changed.

    摘要翻译: 一种方法适用于清洗需要高度清洁度的基板,如半导体晶片,玻璃基板或液晶显示器。 该方法包括使用含磨料颗粒的磨料液研磨衬底,以及通过向研磨液中提供与磨料液体或类似pH具有基本上相同pH值的清洗液体来清洗衬底的抛光表面,使磨料的pH值 附着于基板抛光面的液体不会迅速变化。

    Polishing apparatus including turntable with polishing surface of
different heights
    42.
    发明授权
    Polishing apparatus including turntable with polishing surface of different heights 失效
    抛光装置包括具有不同高度的抛光表面的转台

    公开(公告)号:US6102786A

    公开(公告)日:2000-08-15

    申请号:US234633

    申请日:1999-01-21

    摘要: A polishing apparatus includes a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring disposed above the turntable for supporting a workpiece to be polished and pressing the workpiece against the abrasive cloth under a predetermined pressure. The turntable and the top ring are movable relatively to each other to polish a surface of the workpiece supported by the top ring with the abrasive cloth. The abrasive cloth has a projecting region on a surface thereof for more intensive contact with the workpiece than other surface of the abrasive cloth. The projecting region has a smaller dimension in a radial direction of the turntable than a diameter of the workpiece when the projecting region is held in contact with the workpiece. A position of the projecting region is determined on the basis of an area in which the projecting region acts on the workpiece.

    摘要翻译: 抛光装置包括:转盘,其具有安装在其上表面上的研磨布;以及顶环,其设置在所述转台上方,用于支撑待抛光的工件,并在预定压力下将所述工件压靠所述研磨布。 转盘和顶环彼此相对移动,用研磨布抛光由顶环支撑的工件的表面。 研磨布在其表面上具有突出区域,用于与研磨布的其它表面更加紧密地接触工件。 当突出区域与工件保持接触时,突出区域在转台的径向上具有比工件的直径更小的尺寸。 基于突出区域作用在工件上的区域来确定突出区域的位置。

    Polishing apparatus
    43.
    发明授权
    Polishing apparatus 失效
    抛光设备

    公开(公告)号:US6015337A

    公开(公告)日:2000-01-18

    申请号:US891993

    申请日:1997-07-14

    CPC分类号: B24B37/12 B24B49/16

    摘要: A polishing apparatus for polishing for example a semiconductor wafer to a high degree of flatness includes a turntable to the upper surface of which is affixed a polishing cloth and a top ring. A surface of the workpiece interposed between the polishing cloth on the turntable and the top ring is polished by pressing the workpiece against the polishing cloth with a predetermined pressure and moving the turntable and the top ring relative to each other. The turntable includes a set of annular small tables each of which is smaller than the diameter of the workpiece and determined on the basis of an area of effect on the workpiece.

    摘要翻译: 用于将半导体晶片抛光到高平坦度的抛光装置包括一个转盘,其上表面上贴有一个抛光布和一个顶环。 通过以预定的压力将工件压靠在抛光布上而将转盘上的研磨布和顶环之间的工件表面抛光,并相对于彼此移动转台和顶环。 转盘包括一组环形小桌子,每个小桌子都小于工件的直径,并根据对工件的作用面积确定。

    Electrochemical mechanical polishing method and electrochemical mechanical polishing apparatus
    44.
    发明申请
    Electrochemical mechanical polishing method and electrochemical mechanical polishing apparatus 审中-公开
    电化学机械抛光方法和电化学机械抛光装置

    公开(公告)号:US20090078583A1

    公开(公告)日:2009-03-26

    申请号:US12007956

    申请日:2008-01-17

    摘要: A composite electrolytic processing method makes it possible to remove a conductive film without leaving it in an electrically-insulated state on an underlying barrier film, thereby exposing the barrier film. The electrochemical mechanical polishing method includes: applying a voltage between a first electrode connected to one pole of a power source and a second electrode, connected to the other pole of the power source, for feeding electricity to a conductive film of a polishing object; filling an electrolytic liquid into a space between the first electrode and the conductive film of the polishing object; and pressing and rubbing the conductive film against a polishing surface of a polishing pad to polish the conductive film in such a manner that a barrier film underlying the conductive film becomes gradually exposed from the center toward the periphery of the polishing object.

    摘要翻译: 复合电解处理方法使得可以在导电膜上去除导电膜而不会使其在下面的阻挡膜上处于电绝缘状态,从而暴露阻挡膜。 电化学机械抛光方法包括:在连接到电源的一个极的第一电极和连接到电源的另一个极的第二电极之间施加电压,用于向抛光对象的导电膜供电; 将电解液体填充到研磨对象物的第一电极和导电膜之间的空间内; 并且将导电膜按压并摩擦抛光垫的抛光表面以使导电膜抛光,使得导电膜下面的阻挡膜从研磨对象的中心逐渐露出。

    Neutral particle beam processing apparatus
    45.
    发明授权
    Neutral particle beam processing apparatus 失效
    中性粒子束处理装置

    公开(公告)号:US06858838B2

    公开(公告)日:2005-02-22

    申请号:US10451635

    申请日:2002-03-22

    摘要: A neutral particle beam processing apparatus comprises a plasma generator for generating positive ions and/or negative ions in a plasma, a pair of electrodes (5, 6) involving the plasma generated by the plasma generator therebetween, and a power supply (102) for applying a voltage between the pair of electrodes (5, 6). The pair of electrodes (5, 6) accelerate the positive ions and/or the negative ions generated by the plasma generator. The positive ions and/or the negative ions are neutralized and converted into neutral particles while being drifted in the plasma between the pair of electrodes (5, 6) toward a workpiece (X). The accelerated neutral particles pass through one of the electrodes (6) and are applied to the workpiece (X).

    摘要翻译: 一种中性粒子束处理装置,包括:等离子体发生器,用于在等离子体中产生正离子和/或负离子;一对电极(5,6),其包括由等离子体发生器在其间产生的等离子体;以及电源(102),用于 在所述一对电极(5,6)之间施加电压。 一对电极(5,6)加速由等离子体发生器产生的正离子和/或负离子。 正离子和/或负离子被中和并转化成中性粒子,同时在一对电极(5,6)之间的等离子体中朝向工件(X)漂移。 加速的中性粒子通过电极(6)之一并施加到工件(X)上。

    Mechanical seal
    47.
    发明授权
    Mechanical seal 失效
    机械密封

    公开(公告)号:US4489951A

    公开(公告)日:1984-12-25

    申请号:US523944

    申请日:1983-08-17

    IPC分类号: F16J15/34 F16J15/36

    CPC分类号: F16J15/3468

    摘要: A mechanical seal is disclosed wherein an intermediate floating ring is employed between a seat sleeve and a rotary ring. Each of the rotary ring, intermediate floating ring and the seat sleeve are pressed against each other so as to be relatively rotatable at their respective abutting interfaces, each of the rotary ring, intermediate ring and the seat sleeve being separated from each other with proper clearances between the opposing surfaces thereof at places which are outward of the sliding interfaces and each of the opposing surfaces is provided with an annular groove and a cascade of blades therein so that a fluid coupling is formed between the adjacent opposing surfaces.

    摘要翻译: 公开了一种机械密封件,其中在座椅套筒和旋转环之间采用中间浮动环。 旋转环,中间浮动环和座套中的每一个彼此压靠,以便在它们各自的邻接界面处相对旋转,旋转环,中间环和座套中的每一个彼此分离,具有适当的间隙 在其相对表面之间的位于滑动界面外侧的位置和每个相对表面之间设置有环形槽和叶片级联,使得在相邻的相对表面之间形成流体联接。

    Beam processing apparatus
    48.
    发明授权
    Beam processing apparatus 有权
    梁加工设备

    公开(公告)号:US06849857B2

    公开(公告)日:2005-02-01

    申请号:US10471610

    申请日:2002-03-22

    摘要: A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode (5) disposed upstream of the first electrode (4) in the vacuum chamber (3). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode (4) and the second electrode (5) to alternately extract positive ions (6) and negative ions from the plasma generated by the plasma generator.

    摘要翻译: 光束处理装置包括用于保持工件(X)的工件保持器(20),用于在真空室(3)中产生等离子体的等离子体发生器,设置在真空室(3)中的第一电极(4) 第二电极(5),设置在真空室(3)中的第一电极(4)的上游。 光束处理装置还包括用于在第一电极(4)和第二电极(5)之间施加可变电压以从等离子体发生器产生的等离子体中交替地提取正离子(6)和负离子的电压施加单元。

    Etching method and apparatus
    49.
    发明申请
    Etching method and apparatus 失效
    蚀刻方法和装置

    公开(公告)号:US20050020070A1

    公开(公告)日:2005-01-27

    申请号:US10484502

    申请日:2002-09-24

    摘要: An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.

    摘要翻译: 蚀刻装置包括用于保持工件(X)的工件保持器(21),用于在真空室(3)中产生等离子体(30)的等离子体发生器(10,20),设置在真空室 工件保持器(21)和等离子体发生器(10,20)以及设置在真空室(3)中的孔电极(4)上游的栅电极(5)。 孔口电极(4)具有限定在其中的孔(4a)。 蚀刻装置还包括用于在孔电极(4)和栅电极(5)之间施加电压的电压施加单元(25,26),以加速由等离子体发生器(10,20)产生的等离子体(30)的离子 并且将提取的离子通过孔口电极(4)中的孔(4a),以产生具有10eV至50eV的能量的准直中性粒子束。

    Method for polishing a substrate
    50.
    发明授权
    Method for polishing a substrate 有权
    抛光基材的方法

    公开(公告)号:US06609950B2

    公开(公告)日:2003-08-26

    申请号:US09897918

    申请日:2001-07-05

    IPC分类号: B24B4900

    摘要: A method of polishing substrates enables the size of a polishing table to be reduced. A surface of a substrate to be polished is brought into contact with a polishing surface of a polishing table in such a manner that a portion of the surface of the substrate extends outwardly from an outer periphery of the polishing surface. The substrate is rotated about its center axis while keeping its surface in contact with the polishing surface of the polishing table. The attitude of the substrate carrier is controlled so that the surface of the substrate is kept parallel with the polishing surface of the polishing table during a polishing operation.

    摘要翻译: 研磨基板的方法能够减小抛光台的尺寸。 将要抛光的基底的表面以与研磨台的抛光表面接触的方式使得基底表面的一部分从抛光表面的外周向外延伸。 衬底围绕其中心轴线旋转,同时保持其表面与抛光台的抛光表面接触。 控制基板载体的姿态,使得在抛光操作期间基板的表面与抛光台的抛光表面保持平行。