Method of forming waveguides with ion exchange of halogen ions
    41.
    发明授权
    Method of forming waveguides with ion exchange of halogen ions 失效
    用卤离子离子交换形成波导的方法

    公开(公告)号:US5294240A

    公开(公告)日:1994-03-15

    申请号:US937765

    申请日:1992-09-01

    IPC分类号: C03C21/00

    摘要: This invention pertains to optical waveguides which includes waveguides ofll shapes and sizes, preforms, and optical fibers made from the preforms, and to a method for making waveguides devoid of a physical interface. The method includes preparation of a waveguide from a halide-containing glass, heating the waveguide to a temperature below crystallization temperature of the glass so that it is still solid, providing a gaseous reactive medium containing halide ions of higher electronegativity than halide ions in the waveguide, exposing the waveguide to said reactive medium for a sufficient duration for the halide ions of higher electronegativity in the reactive medium to replace at least a portion of the halide ions of lower electronegativity in the waveguide, and cooling the waveguide whereby a lower refractive index is formed on the side of the waveguide exposed to the reactive medium than the refractive index internally of the waveguide so that light can travel through the portion of the waveguide having the higher refractive index.

    摘要翻译: 本发明涉及包括所有形状和尺寸的波导的光波导,预成型件和由预型件制成的光纤,以及用于制造没有物理接口的波导的方法。 该方法包括从含卤化物的玻璃制备波导,将波导加热至低于玻璃结晶温度的温度,使其仍然是固体,提供含有比波长中的卤离子更高的电负性的卤离子的气态反应介质 使波导到所述反应介质持续足够的持续时间,以使反应介质中具有较高电负性的卤离子替代至少一部分波导中较低电负性的卤离子,并冷却波导,由此较低折射率为 形成在暴露于反应性介质的波导的侧面,而不是波导内部的折射率,使得光可以穿过具有较高折射率的波导的部分。

    GRADIENT INDEX INFRARED TRANSMITTING OPTICS AND METHOD FOR MAKING SAME
    42.
    发明申请
    GRADIENT INDEX INFRARED TRANSMITTING OPTICS AND METHOD FOR MAKING SAME 审中-公开
    梯度指数红外发射光学及其制作方法

    公开(公告)号:US20160377845A1

    公开(公告)日:2016-12-29

    申请号:US14210868

    申请日:2014-03-14

    IPC分类号: G02B13/14 C03C23/00 G02B3/00

    摘要: A method for making a gradient index infrared transmitting optic by thermally treating a preform, where the preform comprises two or more infrared transmitting glasses having different compositions and optical properties, where there is an interface between adjacent glasses, where during the thermal treatment one or more chemical elements from the glasses diffuses through one or more interface resulting in a diffused gradient index optical element comprising a gradient in the chemical element concentration, and where the optical element has a gradient in refractive index and dispersion. Also disclosed is the related infrared transmitting optical element made by this method.

    摘要翻译: 一种用于通过热处理预成型件来制造梯度折射率红外传输光学器件的方法,其中所述预制件包括具有不同组成和光学性质的两个或更多个红外透射玻璃,其中在相邻玻璃之间存在界面,其中在热处理期间,一个或多个 来自玻璃的化学元素通过一个或多个界面扩散,导致包含化学元素浓度梯度的扩散梯度折射率光学元件,并且其中光学元件具有折射率和色散梯度。 还公开了通过该方法制造的相关的红外线透射光学元件。

    SYSTEM AND METHOD FOR DIRECT FIBER-END SURFACE STRUCTURING
    46.
    发明申请
    SYSTEM AND METHOD FOR DIRECT FIBER-END SURFACE STRUCTURING 有权
    直接光纤端面结构的系统和方法

    公开(公告)号:US20150090690A1

    公开(公告)日:2015-04-02

    申请号:US14498001

    申请日:2014-09-26

    IPC分类号: H01J37/32 G02B6/25

    摘要: A fiber-end surface structuring chamber or system having a main body with multiple ports including a fiber-holder port, a process port that is either a stamp/shim holder port or a plasma etching enabler port, an evacuation port, a gas delivery port, and one or more observation ports, where the fiber-end surface structuring system forms structures directly into the end of the fiber to enhance transmission of light over a wide range of wavelengths and increase the laser damage threshold.

    摘要翻译: 一种光纤端面结构室或系统,其具有多个端口的主体,该端口包括光纤保持器端口,作为印模/垫片支架端口或等离子体蚀刻使能端口的处理端口,抽真空口,气体输送端口 以及一个或多个观察端口,其中光纤端表面结构系统直接形成结构到光纤的端部,以增强光在宽波长范围内的透射并增加激光损伤阈值。

    Single Target Sputtering of Copper Zinc Tin Sulfide Selenide, CZT(S, Se)
    49.
    发明申请
    Single Target Sputtering of Copper Zinc Tin Sulfide Selenide, CZT(S, Se) 审中-公开
    铜锡硫化锌,CZT(S,Se)单靶靶溅射

    公开(公告)号:US20140216925A1

    公开(公告)日:2014-08-07

    申请号:US13756730

    申请日:2013-02-01

    IPC分类号: C23C14/34

    CPC分类号: C23C14/3414 C23C14/0623

    摘要: A method of forming a CZT(S,Se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a CZT(S,Se) thin film on the substrate, wherein the CZT(S,Se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 eV. In an embodiment, a ternary target is employed.

    摘要翻译: 从四元靶形成CZT(S,Se)薄膜的方法包括将四价靶溅射到基板上,其中四价靶包括(a)铜,(b)锌,(c)锡和(d) 硒和/或硫,其中每个组分(a)至(d)分别以2:1:4:摩尔比的±50%存在于季目标中,从而形成CZT(S,Se)薄 膜,其中所述CZT(S,Se)薄膜具有钾硅酸盐晶相和约1.0至1.5eV的带隙。 在一个实施例中,采用三元目标。

    CONTROLLED DEPOSITION OF PHOTOVOLTAIC THIN FILMS USING INTERFACIAL WETTING LAYERS
    50.
    发明申请
    CONTROLLED DEPOSITION OF PHOTOVOLTAIC THIN FILMS USING INTERFACIAL WETTING LAYERS 审中-公开
    使用界面湿润层控制光伏薄膜的沉积

    公开(公告)号:US20140076402A1

    公开(公告)日:2014-03-20

    申请号:US14026130

    申请日:2013-09-13

    IPC分类号: H01L31/032 H01L31/18

    摘要: A method for forming a photovoltaic device by depositing at least one wetting layer onto a substrate where the wetting layer is ≦100 nm and sputtering a photovoltaic material onto the wetting layer where the wetting layer interacts with the photovoltaic material. Also disclosed is the related photovoltaic device made by this method. The wetting layer may comprise any combination of In2Se3, CuSe2, Cu2Se, Ga2Se3, In2S3, CuS2, Cu2S, Ga2S3, CuInSe2, CuGaSe2, InxGa2-xSe3 where 0≦x≦2, CuInS2, CuGaS2, InxGa2-xS3 where 0≦x≦2, In2Se3-xSx where 0≦x≦3, CuSe2-xSx where 0≦x≦2, Cu2Se1-xSx, (0≦x≦1), Ga2Se3-xSx where 0≦x≦3, and InxGa2-xS3-ySy where 0≦x≦2, 0≦y≦3. The photovoltaic material may be a CIGS (copper indium gallium diselenide) material or a variation of a CIGS material where a CIGS component is replaced or supplemented with any combination of sulfur, tellurium, aluminum, and silver.

    摘要翻译: 一种通过将至少一个润湿层沉积到衬底上而形成光伏器件的方法,其中润湿层为100nm,并将光伏材料溅射到润湿层与光伏材料相互作用的润湿层上。 还公开了通过该方法制造的相关光伏器件。 润湿层可以包括In2Se3,CuSe2,Cu2Se,Ga2Se3,In2S3,CuS2,Cu2S,Ga2S3,CuInSe2,CuGaSe2,InxGa2-xSe3的任何组合,其中0和nlE; x和nlE; 2,CuInS2,CuGaS2,InxGa2-xS3,其中0和nlE; x和nlE; 2,In2Se3-xSx其中0≦̸ x≦̸ 3,CuSe2-xSx其中0和nlE; x和nlE; 2,Cu2Se1-xSx,(0≦̸ x≦̸ 1),Ga2Se3-xSx其中0和nlE; x和n1E; 3和InxGa2-xS3-ySy 其中0≦̸ x≦̸ 2,0≦̸ y≦̸ 3。 光电材料可以是CIGS(铜铟镓硒化物)材料或CIGS材料的变体,其中CIGS组分被硫,碲,铝和银的任何组合替代或补充。